MCR69-2G.

## MCR69−2, MCR69−3 

## Silicon Controlled Rectifiers **Reverse Blocking Thyristors** 

Designed for overvoltage protection in crowbar circuits. 

## **Features** 

- Glass-Passivated Junctions for Greater Parameter Stability and Reliability 

- Center-Gate Geometry for Uniform Current Spreading Enabling High Discharge Current 

- Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability 

- High Capacitor Discharge Current, 750 Amps 

- Pb−Free Packages are Available* 

**MAXIMUM RATINGS** (TJ = 25°C unless otherwise noted) 

**Rating Symbol Value Unit** Peak Repetitive Off−State Voltage (Note 1) VDRM, V (TJ = 40 to +125°C, Gate Open) VRRM MCR69−2 50 MCR69−3 100 ~~ge~~ Peak Discharge Current (Note 2) ITM 750 A On-State RMS Current IT(RMS) 25 A (180° Conduction Angles; TC = 85°C) ~~ee~~ Average On-State Current IT(AV) 16 A (180° Conduction Angles; TC = 85°C) ~~ee~~ Peak Non-Repetitive Surge Current ITSM ~~ee~~ 300 A (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) ~~re~~ Circuit Fusing Considerations (t = 8.3 ms) I[2] t 375 A[2] s Forward Peak Gate Current IGM 2.0 A (t ≤ 1.0 s, TC = 85°C) Forward Peak Gate Power PGM 20 W (t ≤ 1.0 s, TC = 85°C) Forward Average Gate Power PG(AV) 0.5 W (t = 8.3 ms, TC = 85°C) ~~——~~ Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Mounting Torque − 8.0 in. lb. 

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 

2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse. 

3. Test Conditions: IG = 150 mA, VD = Rated VDRM, ITM = Rated Value, TJ = 125°C. 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

## **http://onsemi.com** 

**SCRs 25 AMPERES RMS 50 thru 100 VOLTS** 

**==> picture [172 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>A K<br>MARKING<br>DIAGRAM<br>4<br>AYWW<br>TO−220AB MCR69x<br>CASE 221A AKA<br>STYLE 3<br>1 |<br>2<br>3<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>MCR69 = Device Code<br>x = 2 or 3<br>AKA = Location Code<br>**----- End of picture text -----**<br>


## **PIN ASSIGNMENT** 

|1<br>2<br>3<br>4|Anode<br>Gate<br>Cathode<br>Anode|
|---|---|



## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MCR69−2|TO220AB|500/Box|
|MCR69−2G|TO220AB<br>(Pb−Free)|500/Box|
|MCR69−3|TO220AB|500/Box|
|MCR69−3G|TO220AB<br>(Pb−Free)|500/Box|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

 Semiconductor Components Industries, LLC, 2004 **December, 2004 − Rev. 1** 

**MCR69/D** 

**MCR69−2, MCR69−3** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance, Junction−to−Case|R�JC|1.5|°C/W|
|Thermal Resistance, Junction−to−Ambient|R�JA|60|°C/W|
|Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds|TL|260|°C|



|**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted.)|**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted.)|**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted.)|**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted.)|**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted.)|**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted.)|
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Peak Repetitive Forward or Reverse Blocking Current<br>(VAK= Rated VDRMor VRRM, Gate Open)<br>TJ= 25°C<br>TJ= 125°C|IDRM, IRRM|−<br>−|−<br>−|10<br>2.0|�A<br>mA|
|**ON CHARACTERISTICS**||||||
|Peak Forward On-State Voltage<br>(ITM= 50 A) (Note 4)<br>(ITM= 750 A, tw= 1 ms) (Note 5)|VTM|−<br>−|−<br>6.0|1.8<br>−|V|
|Gate Trigger Current (Continuous dc)<br>(VD= 12 V, RL= 100�)|IGT|2.0|7.0|30|mA|
|Gate Trigger Voltage (Continuous dc)<br>(VD= 12 V, RL= 100�)|VGT|−|0.65|1.5|V|
|Gate Non−Trigger Voltage<br>(VD= 12 Vdc, RL= 100�, TJ= 125°C)|VGD|0.2|0.40|−|V|
|Holding Current<br>(VD= 12 V, Initiating Current = 200 mA, Gate Open)|IH|3.0|15|50|mA|
|Latching Current<br>(VD= 12 Vdc, IG= 150 mA)|IL|−|−|60|mA|
|Gate Controlled Turn-On Time (Note 6)<br>(VD= Rated VDRM, IG= 150 mA)<br>(ITM= 50 A Peak)|tgt|−|1.0|−|�s|
|**DYNAMIC CHARACTERISTICS**||||||
|Critical Rate-of-Rise of Off-State Voltage<br>(VD= Rated VDRM, Gate Open, Exponential Waveform, TJ= 125°C)|dv/dt|10|−|−|V/�s|
|Critical Rate-of-Rise of On-State Current<br>IG= 150 mA<br>TJ= 125°C|di/dt|−|−|100|A/�s|



4. Pulse duration � 300 � s, duty cycle � 2%. 

5. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse. 

6. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. 

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**2** 

**MCR69−2, MCR69−3** 

## **Voltage Current Characteristic of SCR** 

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**----- Start of picture text -----**<br>
+ Current<br>Anode +<br>Symbol Parameter VTM<br>VDRM Peak Repetitive Off State Forward Voltage<br>on state<br>IDRM Peak Forward Blocking Current<br>VRRM Peak Repetitive Off State Reverse Voltage IRRM at VRRM IH<br>IRRM Peak Reverse Blocking Current<br>VTM Peak On State Voltage + Voltage<br>IH Holding Current Reverse Blocking Region IDRM at VDRM<br>(off state) Forward Blocking Region<br>(off state)<br>Reverse Avalanche Region<br>Anode −<br>1000<br>1.0<br>300<br>200 0.8<br>0.6<br>100<br>ITM<br>0.4<br>50<br>tw 0.2<br>20 tw = 5 time constants 0<br>0.5 1.0 2.0 5.0 10 20 50 25 50 75 100 125<br>tw, PULSE CURRENT DURATION (ms) TC, CASE TEMPERATURE ( ° C)<br>Figure 1. Peak Capacitor Discharge Current Figure 2. Peak Capacitor Discharge Current<br>Derating<br>125 32<br>120<br>Half Wave<br>115<br>24<br>110<br>dc<br>105<br>dc<br>100 16<br>95<br>90<br>Half Wave 8.0<br>85 TJ = 125 ° C<br>80<br>75 0<br>4.0 8.0 12 16 20 0 4.0 8.0 12 16 20<br>IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)<br>NORMALIZED PEAK CURRENT<br>I      , PEAK DISCHARGE CURRENT (AMPS)TM<br>°<br>CASE TEMPERATURE (  C)<br>(AV)<br>P       , AVERAGE POWER DISSIPATION (WATTS)<br>C<br>T   , MAXIMUM  ALLOWABLE<br>**----- End of picture text -----**<br>


**Figure 3. Current Derating** 

**Figure 4. Maximum Power Dissipation** 

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**3** 

**MCR69−2, MCR69−3** 

**==> picture [513 x 624] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>0.7<br>0.5<br>0.3<br>0.2<br>Z�JC(t) = R�JC •  r(t)<br>0.1<br>0.07<br>0.05<br>0.03<br>0.02<br>0.01<br>0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1 k 2 k 3 k 5 k 10 k<br>t, TIME (ms)<br>Figure 5. Thermal Response<br>10<br>1.4<br>5.0<br>VD = 12 Volts<br>3.0 RL = 100 � 1.2 VD = 12 Volts<br>2.0 RL = 100 �<br>1.0 1.0<br>0.5<br>0.8<br>0.3<br>0.2<br>0.5<br>−60 −40 −20 0 20 40 60 80 100 120 140 −60 −40 −20 0 20 40 60 80 100 120 140<br>TJ, JUNCTION TEMPERATURE ( ° C) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 6. Gate Trigger Current Figure 7. Gate Trigger Voltage<br>3.0<br>2.0<br>VD = 12 Volts<br>ITM = 100 mA<br>1.0<br>0.8<br>0.5<br>0.3<br>−60 −40 −20 0 20 40 60 80 100 120 140<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>NORMALIZED GATE TRIGGER CURRENT NORMALIZED GATE TRIGGER VOLTAGE<br>NORMALIZED HOLD CURRENT<br>**----- End of picture text -----**<br>


**Figure 8. Holding Current** 

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**4** 

**MCR69−2, MCR69−3** 

## **PACKAGE DIMENSIONS** 

## **TO−220AB** CASE 221A−07 ISSUE AA 

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B F −T− SEATINGPLANE<br>C<br>4 T S<br>Q A<br>1 2 3<br>H<br>K U<br>Z<br>L<br>V<br>R<br>G<br>D J<br>N<br>**----- End of picture text -----**<br>


- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: INCH. 

|3.|DIME<br>BODY<br>ALLOW|SION Z DEFINES A ZONE WHERE AL<br>AND LEAD IRREGULARITIES ARE<br>ED.|SION Z DEFINES A ZONE WHERE AL<br>AND LEAD IRREGULARITIES ARE<br>ED.|SION Z DEFINES A ZONE WHERE AL<br>AND LEAD IRREGULARITIES ARE<br>ED.|SION Z DEFINES A ZONE WHERE AL<br>AND LEAD IRREGULARITIES ARE<br>ED.|
|---|---|---|---|---|---|
||DIM|INCHES||MILLIMETERS||
|||MIN|MAX|MIN|MAX|
||A|0.570|0.620|14.48|15.75|
||B|0.380|0.405|9.66|10.28|
||C|0.160|0.190|4.07|4.82|
||D|0.025|0.035|0.64|0.88|
||F|0.142|0.147|3.61|3.73|
||G|0.095|0.105|2.42|2.66|
||H|0.110|0.155|2.80|3.93|
||J|0.014|0.022|0.36|0.55|
||K|0.500|0.562|12.70|14.27|
||L|0.045|0.060|1.15|1.52|
||N|0.190|0.210|4.83|5.33|
||Q|0.100|0.120|2.54|3.04|
||R|0.080|0.110|2.04|2.79|
||S|0.045|0.055|1.15|1.39|
||T|0.235|0.255|5.97|6.47|
||U|0.000|0.050|0.00|1.27|
||V|0.045|−−−|1.15|−−−|
||Z|−−−|0.080|−−−|2.04|
||STYL<br>PI|E 3:<br>N 1.<br>CATHODE<br>2.<br>ANODE<br>3.<br>GATE<br>4.<br>ANODE||||



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**5** 

**MCR69−2, MCR69−3** 

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**MCR69/D** 

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