MCR68-2G

## MCR68−2 

## Silicon Controlled Rectifiers **Reverse Blocking Thyristors** 

Designed for overvoltage protection in crowbar circuits. 

## **Features** 

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- Glass-Passivated Junctions for Greater Parameter Stability and Reliability 

**SCRs 12 AMPERES RMS 50 VOLTS** 

- Center-Gate Geometry for Uniform Current Spreading Enabling High Discharge Current 

- Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability 

- High Capacitor Discharge Current, 300 Amps 

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G<br>A opr0 K<br>MARKING<br>DIAGRAM<br>**----- End of picture text -----**<br>


- Pb−Free Package is Available* 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

**Rating Symbol Value Unit MARKING** Peak Repetitive Off−State Voltage (Note 1)(TJ = 40 to +125 ° C, Gate Open) VVDRM,RRM 50 V **DIAGRAM** MCR68−2 Peak Discharge Current (Note 2) ITM 300 A ~~TT~~ On-State RMS Current(180 ° Conduction Angles; TC = 85 ° C) IT(RMS) 12 A AY   WW Average On-State Current(180 ° Conduction Angles; TC = 85 ° C) IT(AV) 8.0 A MCR68−2GAKA ~~Oe~~ Peak Non-Repetitive Surge Current ITSM 100 A **TO−220AB** (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125 ° C) 1 **CASE 221A−07** Circuit Fusing Considerations (t = 8.3 ms) I[2] t 40 A[2] s 2 3 **STYLE 3** ~~rr~~ i TT Forward Peak Gate Current IGM 2.0 A ~~es~~ (t ≤ 1.0 s, TC = 85 ° C) ~~ee ee~~ A = Assembly Location Forward Peak Gate Power PGM 20 W Y = Year (t ≤ 1.0 s, TC = 85 ° C) WW = Work Week ~~ee~~ G = Pb−Free Package Forward Average Gate Power(t = 8.3 ms, TC = 85 ° C) PG(AV) 0.5 W AKA = Diode Polarity Operating Junction Temperature Range TJ −40 to +125 ° C Storage Temperature Range Tstg −40 to +150 ° C **PIN ASSIGNMENT** 1 Cathode Mounting Torque − 8.0 in. lb. 2 Anode Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not 3 Gate normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and ~~ee ee ee =—~~ 4 Anode reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall **ORDERING INFORMATION** not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the **Device Package Shipping** voltage ratings of the devices are exceeded. 

|**Device**|**Package**|**Shipping**|
|---|---|---|
|MCR68−2|TO−220AB|500 Units / Box|
|MCR68−2G|TO−220AB<br>(Pb−Free)|500 Units / Box|



2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse. 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**Preferred** devices are recommended choices for future use and best overall value. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2005 **December, 2005 − Rev. 2** 

**MCR68/D** 

**MCR68−2** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance, Junction−to−Case|R�JC|2.0|°C/W|
|Thermal Resistance, Junction−to−Ambient|R�JA|60|°C/W|
|Maximum Lead Temperature for Soldering Purposes 1/8″from Case for 10 Seconds|TL|260|°C|



|**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted.)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Peak Repetitive Forward or Reverse Blocking Current<br>(VAK= Rated VDRMor VRRM, Gate Open)<br>TJ= 25°C<br>TJ= 125°C|IDRM, IRRM|−<br>−|−<br>−|10<br>2.0|�A<br>mA|
|**ON CHARACTERISTICS**||||||
|Peak Forward On-State Voltage<br>(ITM= 24 A) (Note 3)<br>(ITM= 300 A, tw= 1 ms) (Note 4)|VTM|−<br>−|−<br>6.0|2.2<br>−|V|
|Gate Trigger Current (Continuous dc)<br>(VD= 12 V, RL= 100�)|IGT|2.0|7.0|30|mA|
|Gate Trigger Voltage (Continuous dc)<br>(VD= 12 V, RL= 100�)|VGT|−|0.65|1.5|V|
|Gate Non−Trigger Voltage<br>(VD= 12 Vdc, RL= 100�, TJ= 125°C)|VGD|0.2|0.40|−|V|
|Holding Current<br>(VD= 12 V, Initiating Current = 200 mA, Gate Open)|IH|3.0|15|50|mA|
|Latching Current<br>(VD= 12 Vdc, IG= 150 mA)|IL|−|−|60|mA|
|Gate Controlled Turn-On Time (Note 5)<br>(VD= Rated VDRM, IG= 150 mA)<br>(ITM= 24 A Peak)|tgt|−|1.0|−|�s|
|**DYNAMIC CHARACTERISTICS**||||||
|Critical Rate-of-Rise of Off-State Voltage<br>(VD= Rated VDRM, Gate Open, Exponential Waveform, TJ= 125°C)|dv/dt|10|−|−|V/�s|
|Critical Rate-of-Rise of On-State Current<br>IG= 150 mA<br>TJ= 125°C|di/dt|−|−|75|A/�s|



3. Pulse duration � 300 � s, duty cycle � 2%. 

4. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse. 

5. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. 

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**MCR68−2** 

## **Voltage Current Characteristic of SCR** 

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+ Current<br>Anode +<br>Symbol Parameter VTM<br>VDRM Peak Repetitive Off State Forward Voltage<br>on state<br>IDRM Peak Forward Blocking Current<br>VRRM Peak Repetitive Off State Reverse Voltage IRRM at VRRM IH<br>IRRM Peak Reverse Blocking Current<br>VTM Peak On State Voltage + Voltage<br>IH Holding Current Reverse Blocking Region IDRM at VDRM<br>(off state) Forward Blocking Region<br>(off state)<br>Reverse Avalanche Region<br>Anode −<br>1000<br>1.0<br>300<br>200 0.8<br>0.6<br>100<br>ITM<br>0.4<br>50<br>tw 0.2<br>tw = 5 time constants<br>20 0<br>0.5 1.0 2.0 5.0 10 20 50 25 50 75 100 125<br>tw, PULSE CURRENT DURATION (ms) TC, CASE TEMPERATURE (°C)<br>Figure 1. Peak Capacitor Discharge Current Figure 2. Peak Capacitor Discharge Current<br>Derating<br>125 20<br>120 18 Half Wave<br>115<br>110 dc 14 dc<br>105<br>100 10<br>Half Wave<br>95 8.0 TJ = 125°C<br>90<br>85 4.0<br>80 2.0<br>75<br>1.0 2.0 5.0 8.0 10 1.0 2.0 4.0 5.0 8.0 10<br>IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS)<br>NORMALIZED PEAK CURRENT<br>I      , PEAK DISCHARGE CURRENT (AMPS)TM<br>°<br>CASE TEMPERATURE (  C)<br>C<br>T   , MAXIMUM  (AV)<br>P       , AVERAGE POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br>


**Figure 3. Current Derating** 

**Figure 4. Maximum Power Dissipation** 

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**MCR68−2** 

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1<br>0.7<br>0.5<br>0.3<br>0.2<br>Z�JC(t) = R�JC • r(t)<br>0.1<br>0.07<br>0.05<br>0.03<br>0.02<br>0.01<br>0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1 k 2 k 3 k 5 k 10 k<br>t, TIME (ms)<br>r(t), TRANSIENT THERMAL RESISTANCE(NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 5. Thermal Response** 

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10<br>1.4<br>5.0<br>VD = 12 Volts<br>3.0 RL = 100 � 1.2 VD = 12 Volts<br>2.0 RL = 100 �<br>1.0 1.0<br>0.5<br>0.8<br>0.3<br>0.2<br>0.5<br>−60 −40 −20 0 20 40 60 80 100 120 140 −60 −40 −20 0 20 40 60 80 100 120 140<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 6. Gate Trigger Current Figure 7. Gate Trigger Voltage<br>3.0<br>2.0<br>VD = 12 Volts<br>ITM = 100 mA<br>1.0<br>0.8<br>0.5<br>0.3<br>−60 −40 −20 0 20 40 60 80 100 120 140<br>TJ, JUNCTION TEMPERATURE (°C)<br>NORMALIZED GATE TRIGGER CURRENT NORMALIZED GATE TRIGGER VOLTAGE<br>NORMALIZED HOLD CURRENT<br>**----- End of picture text -----**<br>


**Figure 8. Holding Current** 

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**MCR68−2** 

## **PACKAGE DIMENSIONS** 

**TO−220AB** CASE 221A−07 ISSUE AA 

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−T− SEATINGPLANE<br>B F C<br>T<br>S<br>4<br>Q A<br>1 2 3 U<br>H<br>K<br>Z<br>L R<br>V i J<br>G<br>D<br>N<br>**----- End of picture text -----**<br>


|NOTES:|NOTES:|||||||
|---|---|---|---|---|---|---|---|
|1. DIMENSIONING AND TOLERANCING PER ANSI|||DIMENSIONING AND TOLERANCING PER ANSI|||||
|Y14.5M, 1982.||||||||
|2. CONTROLLING DIMENSION: INCH.||||||||
|3. DIMENSION Z DEFINES A ZONE WHERE ALL||||||||
|BODY AND LEAD IRREGULARITIES ARE||BODY AND LEAD IRREGULARITIES ARE||||BODY AND LEAD IRREGULARITIES ARE||
|ALLOWED.||||||||
|||INCHES||MILLIMETERS||||
||DIM|MIN|MAX|MIN||MAX||
||A|0.570|0.620|14.48||15.75||
||B|0.380|0.405|9.66||10.28||
||C|0.160|0.190|4.07||4.82||
||D|0.025|0.035|0.64||0.88||
||F|0.142|0.147|3.61||3.73||
||G|0.095|0.105|2.42||2.66||
||H|0.110|0.155|2.80||3.93||
||J|0.014|0.022|0.36||0.55||
||K|0.500|0.562|12.70||14.27||
||L|0.045|0.060|1.15||1.52||
||N|0.190|0.210|4.83||5.33||
||Q|0.100|0.120|2.54||3.04||
||R|0.080|0.110|2.04||2.79||
||S|0.045|0.055|1.15||1.39||
||T|0.235|0.255|5.97||6.47||
||U|0.000|0.050|0.00||1.27||
||V|0.045|−−−|1.15||−−−||
||Z|−−−|0.080|−−−||2.04||
||STYLE 3:|||||||
||PIN 1.<br>CATHODE|||||||
|||2.<br>ANODE||||||
|||3.<br>GATE||||||
|||4.<br>ANODE||||||



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