MCR12DSMT4G
Thyristor, 600 V, 200 µA, 7.6 A, 12 A, TO-252 (DPAK), 3 Pins
- Manufacturer: LITTELFUSE
- Product type: Thyristors - SCRs
- Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:200µA; Current It av:7.6A; On State RMS Current IT(rms):12A; Thyristor Case Style:TO-252; No. of Pins:3Pins
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 3Pins
- Product Range: -
- Thyristor Mounting: Surface Mount
- Holding Current Max: 6mA
- On State RMS Current: 12A
- Thyristor Case Style: TO-252 (DPAK)
- Average On State Current: 7.6A
- Gate Trigger Current Max: 200µA
- Gate Trigger Voltage Max: 1V
- Operating Temperature Max: 110°C
- Peak Non Repetitive Surge Current: 100A
- Peak Repetitive Off State Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.887 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**Thyristors** Surface Mount – 100V -600V > MCR12DSM, MCR12DSN ~~MCR12DSM, MCR12DSN~~ ## **Description** The MCR12DSM and MCR12DSN are designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control; CDI (Capacitive Discharge Ignition); and small engines. ## **Features** - Small Size • ESD Ratings: Human • Passivated Die Surface for Body Model, 3B > 8000V Reliability and Uniformity Machine Model, C > 400V - Low Level Triggering and Holding Characteristics - UL Recognized compound meeting flammability rating V-0 **==> picture [243 x 129] intentionally omitted <==** **----- Start of picture text -----**<br> Pin Out<br>Po<br>4<br>4<br>1 [2]<br>3<br>1<br>2<br>3<br>**----- End of picture text -----**<br> **==> picture [244 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> Functional Diagram<br>G<br>A K<br>Additional Information<br>Lo<br>a<br>Datasheet Resources Samples<br>**----- End of picture text -----**<br> © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20 **Thyristors** Surface Mount – 100V -600V > MCR12DSM, MCR12DSN **==> picture [94 x 32] intentionally omitted <==** **==> picture [507 x 621] intentionally omitted <==** **----- Start of picture text -----**<br> Maximum Ratings (TJ = 25°C unless otherwise noted)<br>Rating Symbol Value Unit<br>Peak Repetitive Off−State Voltage (Note 1) MCR12DSM VDRM 600 V<br>(TC = − 40 to +110°C, Sine Wave, 50 to 60 Hz, RGK = 1 k Ω) MCR12DSN VRRM 800<br>On−State RMS Current (180º Conduction Angles; TC = 75ºC) IT(RMS) 12 A<br>Average On-State Current (180º Conduction Angles; TC = 75ºC) IT (AV) 7.6 A<br>Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) ITSM 100 A<br>Circuit Fusing Consideration (t = 8.3 ms) I [2] t 41 A [2] s<br>Forward Peak Gate Power (Pulse Width ≤ 1.0 µsec, TC= 75°C) PGM 5.0 W<br>Forward Average Gate Power (t = 8.3 ms, TC = 75ºC) PG (AV) 0.5 W<br>Forward Peak Gate Current (Pulse Width ≤ 1.0 µsec, TC= 75°C) IGM 2.0 A<br>Operating Junction Temperature Range TJ -40 to +110 °C<br>Storage Temperature Range Tstg -40 to +150 °C<br>Stresses exceeding Maximum Ratings may damage the component. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above<br>the Recommended Operating Conditions may affect component reliability.<br>1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages<br>shall not be tested with a constant current source such that the voltage ratings of the component are exceeded.<br>Thermal Characteristics<br>Rating Symbol Value Unit<br>Thermal Resistance, Junction−to−Case R Ɵ JC 2.2<br>°C/W<br>Thermal Resistance, Junction−to−Ambient R Ɵ JA 88<br>Thermal Resistance, Junction−to−Ambient (Note 2) R Ɵ JA 80<br>Maximum Lead Temperature for Soldering Purposes (Note 3) TL 260 °C<br>Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)<br>Characteristic Symbol Min Typ Max Unit<br>Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, RGK = 1.0 k Ω) [4] TTJJ = 110°C = 25°C IIDRM RRM -- -- 50010 µA<br>Electrical Characteristics - ON (TJ = 25°C unless otherwise noted)<br>Characteristic Symbol Min Typ Max Unit<br>Peak Reverse Gate Blocking Voltage, (IGR = 10 µA) VGRM 10 12.5 18 V<br>Peak Reverse Gate Blocking Current, (VGR = 10 V) IGRM _ _ 1.2 µA<br>Peak Forward On−State Voltage (Note 5), (ITM = 20 A) VTM – 1.3 1.9 V<br>Gate Trigger Voltage (Note 6) (VAK= 12 Vdc; RL = 100 Ω, TC =110º) TTJJ = –40°C = 25°C IGT 5.0_ 12_ 300200 µA<br>TJ = 25°C 0.45 0.65 1.0<br>Gate Trigger Voltage (Continuous dc) (Note 6) (VAK = 12 V; RL = 100 Ω) TJ = –40°C VGT _ _ 1.5 V<br> TJ = 110°C 0.2 – –<br>Holding Current(VD = 12 V, Initiating Current = 200 mA, RGK = 1 kΩ) TTJJ = –40°C = 25°C IH 0.5_ 1.0_ 6.010 mA<br>Latching Current(VD = 12 V, IG = 2.0 mA, RGK = 1 kΩ) TTJJ = –40°C = 25°C IL 0.5_ 1.0_ 6.010 mA<br>Peak Reverse Gate Blocking Current (VGR = 10 V) IRGM _ _ 1.2 µA<br>Turn-On Time (Source Voltage = 12 V, R(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 µs)S = 6.0 KΩ, IT = 16 A(pk), RGK = 1.0 KΩ) tgt _ 2.0 5.0 µs<br>**----- End of picture text -----**<br> © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20 **Thyristors** Surface Mount – 100V -600V > MCR12DSM, MCR12DSN **==> picture [94 x 32] intentionally omitted <==** ## **Dynamic Characteristics** **==> picture [505 x 63] intentionally omitted <==** **----- Start of picture text -----**<br> Characteristic Symbol Min Typ Max Unit<br>Critical Rate of Rise of Off−State Voltage dv/dt 2.0 10 − V/µs<br>(VD = 0.67 x Rated VDRM, Exponential Waveform, RGK = 1.0 K, TJ = 110°C)<br>Critical Rate of Rise of On−State Current di/dt − 50 100 A/µs<br>(IPK = 50 A, PW = 40 sec, diG/dt = 1 A/sec, IGT = 10 mA)<br>**----- End of picture text -----**<br> **2.** These ratings are applicable when surface mounted on the minimum pad sizes recommended. **3.** 1/8" from case for 10 seconds. **4.** Ratings apply for negative gate voltage or RGK = 1.0 kΩ Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Component should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. **5.** Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. **6.** RGK current not included in measurement. ## **Voltage Current Characteristic of SCR** **==> picture [491 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> +Current<br>Symbol Parameter<br>VDRM Peak Repetitive Forward Off State Voltage VTM Anode+<br>IDRM Peak Forward Blocking Current<br>On State<br>VIRRMRRM Peak Repetitive Reverse Off State VoltagePeak Reverse Blocking Current IRRM at VRRM IH<br>VTM Maximum On State Voltage<br>IH Holding Current +Voltage<br>Reverse Blocking Region IDRM at VDRM<br>(Off State)<br>Forward Blocking Region<br>Reverse Avalanche Region (Off State)<br>Anode-<br>**----- End of picture text -----**<br> **==> picture [243 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 1. Average Current Derating<br>**----- End of picture text -----**<br> **==> picture [244 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 2. On−State Power Dissipation<br>**----- End of picture text -----**<br> **==> picture [504 x 171] intentionally omitted <==** © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20 **Thyristors** Surface Mount – 100V -600V > MCR12DSM, MCR12DSN **==> picture [94 x 32] intentionally omitted <==** **==> picture [243 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 3. On−State Characteristics<br>**----- End of picture text -----**<br> **==> picture [243 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 4. Transient Thermal Response<br>**----- End of picture text -----**<br> **==> picture [504 x 170] intentionally omitted <==** **Figure 5. Typical Gate Trigger Current vs Junction Temperature** **==> picture [243 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 6. Typical Gate Trigger Voltage vs Junction Temperature<br>**----- End of picture text -----**<br> **==> picture [504 x 170] intentionally omitted <==** **Figure 7. Typical Holding Current vs Junction Temperature** **Figure 8. Typical Latching Current vs Junction Temperature** **==> picture [504 x 170] intentionally omitted <==** © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20 **Thyristors** Surface Mount – 100V -600V > MCR12DSM, MCR12DSN **==> picture [94 x 32] intentionally omitted <==** **==> picture [243 x 24] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 9. Holding Current vs Gate-Carthode Resistance<br>**----- End of picture text -----**<br> **Fig.10 Exponential Static dv/dt vs Gate-Carthode Resistance & Junction Temp** **==> picture [504 x 170] intentionally omitted <==** **==> picture [243 x 24] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 11. Typical Gate Trigger Current vs Junction Temperature<br>**----- End of picture text -----**<br> **Figure 12. Typical Gate Trigger Voltage vs Junction Temperature** **==> picture [504 x 171] intentionally omitted <==** © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20 **Thyristors** Surface Mount – 100V -600V > MCR12DSM, MCR12DSN **==> picture [94 x 32] intentionally omitted <==** ## **Dimensions** **==> picture [242 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>E C<br>A<br>b3 B c2<br>4<br>L3 Z Z<br>D Detail A H<br>12 3<br>L4 NOTE 7<br>b2 c Bottom View Bottom View<br>e Side View Alternate<br>b Construction<br>Top View 0.005 (0).13 M C H<br>L2 GAUGEPLANE C Seating<br>Plane<br>L<br>A1<br>L1<br>Detail A<br>Rotated 90°C W<br>**----- End of picture text -----**<br> ## **Soldering Footprint** **==> picture [184 x 112] intentionally omitted <==** **----- Start of picture text -----**<br> 6.20 3.00<br>0.244 0.118<br>2.58<br>0.102<br>5.80<br>1.60 6.17<br>0.228<br>0.063 0.243<br>SCALE 3: 1 mm<br>inches<br>**----- End of picture text -----**<br> **==> picture [245 x 250] intentionally omitted <==** **----- Start of picture text -----**<br> Inches Millimeters<br>Dim<br>Min Max Min Max<br>A 0.087 0.094 2.20 2.40<br>A1 0.000 0.005 0.00 0.12<br>b 0.022 0.030 0.55 0.75<br>b2 0.026 0.033 0.65 0.85<br>b3 0.209 0.217 5.30 5.50<br>c 0.019 0.023 0.49 0.59<br>c2 0.019 0.023 0.49 0.59<br>D 0.213 0.224 5.40 5.70<br>E 0.252 0.260 6.40 6.60<br>e 0.091 2.30<br>H 0.374 0.406 9.50 10.30<br>L 0.058 0.070 1.47 1.78<br>L1 0.114 2.90<br>L2 0.019 0.023 0.49 0.59<br>L3 0.053 0.065 1.35 1.65<br>L4 0.028 0.039 0.70 1.00<br>Z 0.154 - 3.90 -<br>**----- End of picture text -----**<br> **1.** Dimensioning and tolerancing per asme y14.5m, 1994. **2.** Controlling dimension: inch. **3.** Thermal pad contour optional within di- mensions b3, l3 and z. **4.** Dimensions d and e do not include mold flash, protrusions, or burrs. Mold flash, protrusions, or gate burrs shall l3 z not exceed 0.006 Inches per side. **5.** Dimensions d and e are determined at the outermost extremes of the plastic body. **6.** Datums a and b are determined at datum plane h. © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20 **Thyristors** Surface Mount – 100V -600V > MCR12DSM, MCR12DSN **==> picture [94 x 32] intentionally omitted <==** **==> picture [245 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions<br>**----- End of picture text -----**<br> ## **Part Marking System** **==> picture [473 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> DPAK-3 4<br>Case 369D DPAK-3 R1<br>Case 369C 2DSxG<br>TO251-3L POD 1 [2] Style 4 YWW<br>3<br>B C<br>R E 4<br>V<br>DPAK-3 R1<br>A Z Case 369DStyle 4 2DSxGYWW<br>1<br>N<br>2<br>3<br>S R12DSx = Device Code<br>-T- F F x = M, or N<br>SEATINGPLANE K YWW = Year= Work Week<br>G = Pb-Free Package<br>G G J D<br>3PL<br>H 0.13 (0.0005) T<br>**----- End of picture text -----**<br> **==> picture [245 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> Inches Millimeters<br>Dim<br>Min Max Min Max<br>A 0.213 0.224 5.40 5.70<br>B 0.252 0.260 6.40 6.60<br>C 0.087 0.094 2.20 2.40<br>D 0.024 0.030 0.60 0.75<br>E 0.022 0.026 0.55 0.65<br>F 0.022 0.03 0.58 0.78<br>G 0.091 2.30<br>H 0.046 0.050 1.18 1.28<br>J 0.019 0.023 0.49 0.59<br>K 0.291 0.315 7.40 8.00<br>N 0.031 0.038 0.78 0.98<br>R 0.209 0.217 5.30 5.50<br>S 0.063 1.60<br>V 0.053 0.065 1.35 1.65<br>Z 0.150 3.80<br>**----- End of picture text -----**<br> **1.** Dimensioning and Tolerancing Per ANSI Y14.5M, 1982. **2.** Controlling Dimension: Inch. STYLE 6:Pin 1. MT1 **2.** MT2 **3.** Gate **4.** MT2 |||**Pin**|**Assignment**| |---|---|---|---| ||||| ||1||Cathode| ||2||Anode| ||3||Gate| ||4||Anode| ## **Ordering Information** **==> picture [245 x 66] intentionally omitted <==** **----- Start of picture text -----**<br> Device Package Type Package Shipping<br>2500<br>MCR12DSMT4G DPAK 369C<br>Tape & Reel<br>MCR12DSN-1G IPAK 369D 4000 Units/Box<br>2500<br>MCR12DSNT4G DPAK 369C<br>Tape & Reel<br>**----- End of picture text -----**<br> **Disclaimer Notice -** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/20
Updated at June 10, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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