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MCR12DCMT4G
Thyristor, 600 V, 20 mA, 12 A, 12 A, TO-252 (DPAK), 3 Pins
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- Manufacturer: LITTELFUSE
- Product type: Thyristors - SCRs
- Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:20mA; Current It av:12A; On State RMS Current IT(rms):12A; Thyristor Case Style:TO-252; No. of Pins:3Pins; Peak Non Rep Surge C
- MSL: -
- SVHC: No SVHC (25-Jun-2020)
- No. of Pins: 3Pins
- Product Range: -
- Thyristor Mounting: Surface Mount
- Holding Current Max: 40mA
- On State RMS Current: 12A
- Thyristor Case Style: TO-252 (DPAK)
- Average On State Current: 12A
- Gate Trigger Current Max: 20mA
- Gate Trigger Voltage Max: 1V
- Operating Temperature Max: 125°C
- Peak Non Repetitive Surge Current: 100A
- Peak Repetitive Off State Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.887 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Thyristors** Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN ~~Pb ~~~ ## ~~MCR12DCM, MCR12DCN~~ ## **Description** ~~[oT~~ This thyristor is designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate− controlled devices are needed. ## **Features** - Small Size - Passivated Die for Reliability and Uniformity - Low Level Triggering and Holding Characteristics - Epoxy Meets rating UL Recognized compound meets flammability rating V-0. - ESD Ratings: Human Body Model, 3B > 8000 V - Machine Model, C > 400 V **==> picture [504 x 116] intentionally omitted <==** **----- Start of picture text -----**<br> Pin Out • Pb−Free Packages are Available<br>[Po<br>Functional Diagram<br>[<br>4 4<br>G<br>1 » 2 A K<br>3 3<br>**----- End of picture text -----**<br> **==> picture [213 x 65] intentionally omitted <==** **----- Start of picture text -----**<br> Additional Information<br>kd<br>Datasheet Resources Samples<br>**----- End of picture text -----**<br> © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/10/19 **Thyristors** Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN **==> picture [94 x 32] intentionally omitted <==** **==> picture [506 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> Maximum Ratings (TJ = 25°C unless otherwise noted)<br>Rating Symbol Value Unit<br>Peak Repetitive Off−State Voltage (Note 1) MCR12DCM VDRM 600 V<br>(− 40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12DCN VRRM 800<br>On-State RMS Current<br>(180º Conduction Angles; TC = 90°C) IT (RMS) 12 A<br>Average On−State Current (180º Conduction Angles; TC = 90°C) IT(AV) 7.8 A<br>Peak Non-Repetitive Surge Current(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) ITSM 100 A<br>Circuit Fusing Consideration (t = 8.3 ms) I [2] t 41 A²sec<br>Forward Peak Gate Power<br>(Pulse Width ≤ 10 µsec,TC = 90°C) PGM 5.0 W<br>Forward Average Gate Power (t = 8.3 msec, TC = 90°C) PGM (AV) 0.5 W<br>Forward Peak Gate Current<br>(Pulse Width ≤ 1.0 µsec, TC= 90°C) IGM 2.0 A<br>Operating Junction Temperature Range TJ -40 to 125 °C<br>Storage Temperature Range Tstg -40 to 150 °C<br>**----- End of picture text -----**<br> Maximum ratings are those values beyond which component damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, component functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. **Thermal Characteristics** **==> picture [506 x 350] intentionally omitted <==** **----- Start of picture text -----**<br> Rating Symbol Value Unit<br>Thermal Resistance, Junction−to−Case R Ɵ JC 2.2<br>Thermal Resistance, Junction−to−Ambient R Ɵ JA 88 °C/W<br>Thermal Resistance, Junction−to−Ambient (Note 2) R Ɵ JA 80<br>Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds TL 260 °C<br>Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)<br>Characteristic Symbol Min Typ Max Unit<br>Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM TJ = 25°C IDRM - - 0.01 mA<br>or VRRM Gate Open) TJ = 125°C IRRM - - 5.0<br>Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)<br>Characteristic Symbol Min Typ Max Unit<br>Peak Forward On−State Voltage (Note 2) (ITM = 16 A) VTM _ 1.3 1.9 V<br>Gate Trigger Current (Continuous dc)(VD = 12 V; RL = 100 Ω) TTJ J = −40°C= 25°C IGT 2.0_ 7.0_ 2040 mA<br>Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) TTJ J = −40°C= 25°C VGT 0.5_ 0.65_ 2.51.0 V<br>Gate Non−Trigger Voltage (VD = 12 V, RL = 100 Ω) TJ = 125ºC VGD 0.2 _ _ V<br>Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) TTJ J = −40°C= 25°C IH 4.0_ 22_ 4080 mA<br>Latch Current 4.0 22 40<br>(VD = 12 V, IG = 20 µA, TJ = 25°C) IL mA<br>(VD = 12 V, IG = 40 µA, TJ = -40°C) _ _ 80<br>**----- End of picture text -----**<br> © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/10/19 **Thyristors** Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN **==> picture [94 x 32] intentionally omitted <==** |**Dynamic Characteristics**|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Critical Rate of Rise of Off−State Voltage<br>(VD= Rated VDRMExponential Waveform, Gate Open, TJ= 125ºC)|dv/dt|50|200|−|V/µs| 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8" from case for 10 seconds. 4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. ## **Voltage Current Characteristic of SCR** **==> picture [244 x 103] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter<br>VDRM Peak Repetitive Forward Off State Voltage<br>IDRM Peak Forward Blocking Current<br>VRRM Peak Repetitive Reverse Off State Voltage<br>IRRM Peak Reverse Blocking Current<br>VTM Maximum On State Voltage<br>IH Holding Current<br>**----- End of picture text -----**<br> **==> picture [205 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> +Current<br>Anode +<br>VTM<br>on state<br>IRRM at VRRM IH<br>+Voltage<br>Reverse Blocking Region IDRM at VDRM<br>(off state) Forward Blocking Region<br>Reverse Avalanche Region (off state)<br>Anode<br>**----- End of picture text -----**<br> **==> picture [243 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 1. Average RMS Current Derating<br>**----- End of picture text -----**<br> **==> picture [244 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 2. On−State Power Dissipation<br>**----- End of picture text -----**<br> **==> picture [505 x 190] intentionally omitted <==** © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/10/19 **Thyristors** Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN **==> picture [94 x 32] intentionally omitted <==** **==> picture [243 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 3. On−State Characteristics<br>**----- End of picture text -----**<br> **==> picture [244 x 170] intentionally omitted <==** ## **Figure 5. Typical Gate Trigger Current vs Junction Temperature** **==> picture [244 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1.0<br>65 110 125<br>TJ, JUNCTION TEMPER ATURE ((°C)°)C<br>H, HOLDING CURRENT (mA)<br>I<br>**----- End of picture text -----**<br> **==> picture [244 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 7. Typical Holding Current vs Junction Temperature<br>(V)<br>**----- End of picture text -----**<br> **==> picture [245 x 630] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 4. Transient Thermal Response<br>1.0<br>0.1<br>Z JC(t) [ = R] JC(t) [r(t][)]<br>0.01<br>0.1 1.0 10 100 1000 10 K<br>t, TIME (ms)<br>Figure 6. Typical Gate Trigger Voltage vs Junction Temperature<br>100<br>10<br>1.0<br>(°C) 35 65 80 110 125<br>TJ, JUNCTION TEMPERATURE (°C)<br>Figure 9. Exponential Static dv/dt vs<br> Gate−Cathode Resistance<br>1000<br>VD = 800 V<br>TJ = 125°C<br>100<br>10 100 10001 0 K<br>RGK<br>(NORMALIZED)<br>TRANSIENT RESISTANCE<br>r(t),<br>(V)<br>, LATCHING CURRENT IL<br>STATIC dv/dt (V/ s)<br>**----- End of picture text -----**<br> © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/10/19 **Thyristors** Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN **==> picture [94 x 32] intentionally omitted <==** **==> picture [245 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions<br>A<br>E C<br>A<br>b3 B c2<br>4<br>L3 Z<br>D<br>DETAIL A H<br>12 3<br>L4 NOTE 7<br>b2 c BOTTOM VIEW<br>e SIDE VIEW<br>b<br>TOP VIEW 0.005 (0.13) M C<br>H Z Z<br>L2 GAUGEPLANE C PLANESEATING<br>L A1 BOTTOM VIEW<br>L1 ALTERNATE<br>CONSTRUCTIONS<br>DETAIL A<br>ROTATED 90 CW<br>**----- End of picture text -----**<br> **==> picture [244 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> Part Marking System<br>4<br>DPAK<br>CASE 369C<br>STYLE 4<br>1 2<br>3<br>YWW<br>R1<br>2DCxG<br>Y= Y ear<br>WW = Work Week<br>R12DCx = Device Code<br>x= M or N<br>**----- End of picture text -----**<br> **==> picture [505 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> Inches Millimeters Pin Assignment<br>Dim<br>1 Cathode<br>Min Max Min Max<br>2 Anode<br>A 0.087 0.094 2.20 2.40<br>3 Gate<br>A1 0.000 0.005 0.00 0.12<br>4 Anode<br>b 0.022 0.030 0.55 0.75<br>b2 0.026 0.033 0.65 0.85<br>b3 0.209 0.217 5.30 5.50<br>c 0.019 0.023 0.49 0.59<br>c2 0.019 0.023 0.49 0.59<br>D 0.213 0.224 5.40 5.70<br>E 0.252 0.260 6.40 6.60<br>e 0.091 2.30 Ordering Information<br>H 0.374 0.406 9.50 10.30<br>Device Package Shipping<br>L 0.058 0.070 1.47 1.78<br>MCR12DCMT4 DPAK<br>L1 0.114 2.90<br>DPAK<br>L2 0.019 0.023 0.49 0.59 MCR12DCMT4G<br>(Pb−Free) 2500 /<br>L3 0.053 0.065 1.35 1.65 MCR12DCNT4 TO−220AB Tape & Reel<br>L4 0.028 0.039 0.70 1.00<br>TO−220AB<br>Z 0.154 - 3.90 - MCR12DCNT4G (Pb−Free)<br>**----- End of picture text -----**<br> 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. **Disclaimer Notice** - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/10/19
Updated at June 10, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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