MCR100W-10MF

**MCR100W-10M SCR Rev.01 - 27 August 2021** 

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Product data sheet<br>**----- End of picture text -----**<br>


## **1. General description** 

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Planar passivated SCR with sensitive gate in a SOT223 surface  Lead-Free<br>mountable plastic package. This SCR is designed to be interfaced  h [alogen-Free]<br>Lead-Free Qeg0n-Free<br>directly to microcontrollers, logic integrated circuits and other low<br>power gate trigger circuits.<br>RoHS Green Green |<br>2. Features and benefits<br>•   On-state RMS current, 1.25 A<br>•<br>   Repetitive peak off-state voltage, 1000 V<br>•   High surge current capability Lil G<br>•   Direct triggering from low power drivers and logic ICs aS © A<br>•   Planar passivated for voltage ruggedness and reliability K A<br>•   Surface mountable package<br>3. Applications<br>G<br>•   GFCI (Ground Fault Circuit Interrupter) Y K<br>**----- End of picture text -----**<br>


- AFCI (Arc Fault Circuit Interrupter) 

- RCD (Residual Current Device) 

- RCBO (Residual Current circuit Breaker with Overload protection) 

- AFDD (Arc Fault Detection Device) 

## **4. Quick reference data** 

## **Table 1. Quick reference data** 

|**Symbol**|**Values**|**Unit**|
|---|---|---|
|VDRM, VRRM|1000|V|
|IT(RMS)|1.25|A|
|IGT|≤90|μA|
|Tj|125|°C|



**WeEn Semiconductors** 

**MCR100W-10M SCR** 

## **5. Characteristics** 

## **Table 2. Limiting values** 

|**5. Characteristics**<br>**Table 2. Limiting values**|**5. Characteristics**<br>**Table 2. Limiting values**|||
|---|---|---|---|
|_In accordance with the Absolute Maximum Rating System (IEC 60134)._||||
|**Symbol  Parameter**|**Conditions**|**Values**|**Unit**|



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Symbol Parameter Conditions Values Unit<br> VDRM  repetitive peak off-state  1000 V<br>**----- End of picture text -----**<br>


|**5. Characteristics**<br>**Table 2. Limiting values**|**5. Characteristics**<br>**Table 2. Limiting values**|**5. Characteristics**<br>**Table 2. Limiting values**|**5. Characteristics**<br>**Table 2. Limiting values**|**5. Characteristics**<br>**Table 2. Limiting values**|
|---|---|---|---|---|
|_In accordance with the Absolute Maximum Rating System (IEC 60134)._|||||
|**Symbol **|**Parameter**|**Conditions**|**Values**|**Unit**|
|VDRM|repetitive peak of-state||1000|V|
||voltage||||
|VRRM|repetitive peak reverse<br>voltage||1000|V|
|IT(AV)|average on-state current|half sine wave; Tc≤ 105 °C|0.8|A|
|IT(RMS)|RMS on-state current|half sine wave; Tc≤ 105 °C|1.25|A|
|ITSM|non-repetitive peak on-<br>state current|half sine wave; Tj(init)= 25 °C; tp= 10 ms|23|A|
|||half sine wave; Tj(init)= 25 °C; tp= 8.3 ms|25|A|
|I<br>2t|I<br>2t for fusing|tp= 10 ms; sine-wave pulse|2.645|A<br>2s|
|dIT/dt|rate of rise of on-state<br>current|IG= 0.1 mA|100|A/μs|
|IGM|peak gate current||1.2|A|
|PGM|peak gate power||2|W|
|PG(AV)|average gate power|over any 20 ms period|0.2|W|
|Tstg|storage temperature||-40 to 150|°C|
|Tj|junction temperature||-40 to 125|°C|



**Table 3. Electrical Characteristics** 

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Symbol Parameter Conditions Min Typ Max Unit<br>**----- End of picture text -----**<br>


|**Symbol **|**Parameter**|**Conditions**|**Conditions**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|---|
||||||||||
|**Static characteristics**|||||||||
|IGT|gate trigger current|VD= 12 V; RL= 100 Ω; Tj= 25 °C|||10|-|90|μA|
|VGT|gate trigger voltage|VD= 12 V; RL= 100 Ω; Tj= 25 °C|||-|0.6|0.8|V|
|||VD= 800 V; IT= 0.1 A;Tj= 125 °C|||0.25|0.4|-|V|
|VRG|gate reverse voltage|IRG= 2 mA|||10|-|-|V|
|IL|latching current|IT= 0.1 A;RGK= 1 kΩ;Tj= 25 °C|||-|-|5|mA|
|IH|holding current|VD= 12 V;RGK= 1 kΩ;Tj= 25°C|||-|-|3|mA|
|VT|on-state voltage|IT= 2.5 A;  Tj= 25°C|||-|-|1.45|V|
|IDRM|of-state current|VD= VDRM/ VRRM;RGK= 1 kΩ|Tj= 25 °C||-|-|1|μA|
|IRRM|reverse current||Tj= 125 °C||-|-|100|μA|
|**Dynamic characteristics**|||||||||
|dVD/dt|rate of rise of of-state<br>voltage|VDM= 670 V; Tj= 125 °C;RGK= 1 kΩ;<br>(VDM= 67% of VDRM); exponential waveform|||50|-|-|V/μs|



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## **Table 4. Thermal characteristics** 

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Symbol Parameter Conditions Min  Typ Max Unit<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Conditions**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|---|
||||||||||
|Rth(j-c)|thermal resistance<br>fromjunction to case||SOT223||-|-|20|K/W|
|Rth(j-a)|thermal resistance<br>from junction to<br>ambient|in free air|SOT223||-|120|-|K/W|



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f = 50 Hz; Tc ≤ 105 °C<br>**----- End of picture text -----**<br>


**Fig. 1. RMS on-state current as a function of case temperature; maximum values** 

**Fig. 2. RMS on-state current as a function of surge duration; maximum values** 

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**SCR** 

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conduction form<br>angle factor<br>(degrees) a<br>30 4<br>60 2.8<br>90 2.2 α<br>120 1.9<br>180 1.57<br>**----- End of picture text -----**<br>


## α = conduction angle 

a = form factor = IT(RMS) / IT(AV) 

**Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values** 

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IT ITSM<br>tp t<br>Tj(init) = 25 °C max<br>**----- End of picture text -----**<br>


## f = 50 Hz 

**Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values** 

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IT ITSM<br>tp t<br>Tj(init) = 25 °C max<br>**----- End of picture text -----**<br>


## tp ≤ 10 ms 

(1) dIT/dt limit 

**Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values** 

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P tp<br>δ =<br>T<br>tp t<br>T<br>**----- End of picture text -----**<br>


**Fig. 6. Transient thermal impedance from junction to case as a function of pulse duration** 

**Fig. 7. Normalized gate trigger current as a function Fig. 8. Normalized latching current as a function of of junction temperature junction temperature** 

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**MCR100W-10M** 

**SCR** 

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 Fig. 9. Normalized holding current as a function of Vo = 0.957 V; Rs = 0.1464 Ω<br>junction temperature (1) Tj = 150 °C; typical values<br>(2) Tj = 150 °C; maximum values<br>(3) Tj = 25 °C; maximum values<br> Fig. 10. On-state current as a function of on-state<br>voltage<br>**----- End of picture text -----**<br>


**Fig. 11.  Normalized gate trigger voltage as a function of junction temperature** 

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**MCR100W-10M SCR** 

## **6. Ordering information** 

## **Table 5. Ordering information** 

|**Type number**|**Package**<br>**Name**|**Orderable part number **|**Packing**<br>**method**|**Small packing**<br> **quantity**|**Package**<br>**version**|**Package**<br>**issue date**|
|---|---|---|---|---|---|---|
|MCR100W-10M|SOT223||Reel|1000|SOT223|16-Mar-2006|



## **7. Marking** 

## **Table 6. Marking codes** 

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Type number Marking codes<br>MCR100W-10M<br>10M<br>MCR100<br>**----- End of picture text -----**<br>


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## **8. Package outline** 

**Plastic surface-mounted package with increased heatsink; 4 leads** 

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SOT223<br>**----- End of picture text -----**<br>


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D B E A X<br>c<br>y<br>HE v M A<br>b1<br>4<br>Q<br>A<br>A1<br>1 2 3 Lp<br>e1 bp w M B detail X<br>e<br>0 2 4 mm<br>scale<br>**----- End of picture text -----**<br>


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DIMENSIONS (mm are the original dimensions)<br>UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y<br>1.8  0.10  0.80  3.1  0.32  6.7  3.7  7.3  1.1  0.95<br>mm 4.6 2.3 0.2 0.1 0.1<br>1.5 0.01 0.60 2.9 0.22 6.3 3.3 6.7 0.7 0.85<br>OUTLINE   REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  JEITA PROJECTION<br>04-11-10<br> SOT223 SC-73<br>06-03-16<br>**----- End of picture text -----**<br>


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## **9. Legal information** 

## **Data sheet status** 

|**Document**<br>**status [1]**<br>**[2]**|**Product**<br>**status [3]**|**Definition**|
|---|---|---|
|Objective<br>[short] data<br>sheet|Development|This document contains data from<br>the objective specification for product<br>development.|
|Preliminary<br>[short] data<br>sheet|Qualification|This document contains data from the<br>preliminary specification.|
|Product<br>[short] data<br>sheet|Production|This document contains the product<br>specification.|



[1] Please consult the most recently issued document before initiating or completing a design. 

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[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. 

## **Definitions** 

**Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 

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**Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 

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**Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 

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**Translations** — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 

## **Trademarks** 

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 

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## **10. Contents** 

**1.  General description .......................................................1 2.  Features and benefits ...................................................1 3.  Applications ...................................................................1 4.  Quick reference data .....................................................1 5.  Characteristics...............................................................2 6.  Ordering information .....................................................7 7.  Marking ...........................................................................7 8.  Package outline .............................................................8 9.  Legal information ..........................................................9 10.  Contents .....................................................................11** 

## **© WeEn Semiconductors Co., Ltd. 2021. All rights reserved** 

For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com **Date of release: 27 August 2021** 

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