MCR100-6G

MCR100 Series 

## Sensitive Gate Silicon Controlled Rectifiers **Reverse Blocking Thyristors** 

PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package which is readily adaptable for use in automatic insertion equipment. 

## **http://onsemi.com** 

**SCRs 0.8 A RMS 100 thru 600 V** 

## **Features** 

- Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits 

- Blocking Voltage to 600 V 

- On−State Current Rating of 0.8 A RMS at 80°C 

- • High Surge Current Capability − 10 A • for Ease of Design 

- • Immunity to dV/dt − 20 V/ sec Minimum at 110°C • Glass-Passivated Surface for Reliability and Uniformity a 

- Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design 

- Immunity to dV/dt − 20 V/ sec Minimum at 110°C 

- Glass-Passivated Surface for Reliability and Uniformity 

- Pb−Free Packages are Available* 

**==> picture [167 x 147] intentionally omitted <==**

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G<br>A K<br>TO−92<br>CASE 29<br>STYLE 10<br>1<br>1 23 7; 2 3<br>STRAIGHT LEAD BENT LEAD<br>BULK PACK TAPE & REEL<br>AMMO PACK<br>**----- End of picture text -----**<br>


**MARKING DIAGRAM** 

MCR 100−x AYWW x = Specific Device Code A = Assembly Location Y = Year WW = Work Week = Pb−Free Package (Note: Microdot may be in either location) **PIN ASSIGNMENT** 1 Cathode 2 Gate 3 Anode ~~=~~ **ORDERING INFORMATION** See detailed ordering and shipping information on page 5 of this data sheet. 

> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **MCR100/D** 

**1** 

© Semiconductor Components Industries, LLC, 2010 **February, 2010 − Rev. 10** 

**MCR100 Series** 

## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**MAXIMUM RATINGS**(TJ= 25°C unless otherwise noted)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Off−State Voltage (Notes 1 and 2)<br>(TJ=�40 to 110°C, Sine Wave, 50 to 60 Hz; RGK= 1 k�)<br>MCR100−3<br>MCR100−4<br>MCR100−6<br>MCR100−8|VDRM,<br>VRRM|100<br>200<br>400<br>600|V|
|On-State RMS Current, (TC= 80°C) 180°Conduction Angles|IT(RMS)|0.8|A|
|Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ= 25°C)|ITSM|10|A|
|Circuit Fusing Consideration, (t = 8.3 ms)|I2t|0.415|A2s|
|Forward Peak Gate Power, (TA= 25°C, Pulse Width�1.0�s)|PGM|0.1|W|
|Forward Average Gate Power, (TA= 25°C, t = 8.3 ms)|PG(AV)|0.01|W|
|Forward Peak Gate Current, (TA= 25°C, Pulse Width�1.0�s)|IGM|1.0|A|
|Reverse Peak Gate Voltage, (TA= 25°C, Pulse Width�1.0�s)|VGRM|5.0|V|
|Operating Junction Temperature Range @ Rate VRRMand VDRM|TJ|−40 to 110|°C|
|Storage Temperature Range|Tstg|−40 to 150|°C|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 

2. See ordering information for exact device number options. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|**THERMAL CHARACTERISTICS**||||||||
|---|---|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|||**Max**||**Unit**||
|Thermal Resistance,Junction−to−Case<br>Junction−to−Ambient||R�JC<br>R�JA|||75<br>200||°C/W||
|Lead Solder Temperature<br>(�1/16″from case, 10 secs max)||TL|||260|||°C|
|**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted)|||||||||
|**Characteristic**|**Symbol**||**Min**||**Typ**||**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||||
|Peak Repetitive Forward or Reverse Blocking Current (Note 3)<br>TC= 25°C<br>(VD= Rated VDRMand VRRM; RGK= 1 k�)<br>TC= 110°C|IDRM, IRRM||−<br>−||−<br>−||10<br>100|�A|
|**ON CHARACTERISTICS**|||||||||
|Peak Forward On−State Voltage*<br>(ITM= 1.0 A Peak @ TA= 25°C)|VTM||−||−||1.7|V|
|Gate Trigger Current (Note 4)<br>TC= 25°C<br>(VAK= 7.0 Vdc, RL= 100�)|IGT||−||40||200|�A|
|Holding Current (Note 3)<br>TC= 25°C<br>(VAK= 7.0 Vdc, Initiating Current = 20 mA, RGK= 1 k�) TC= −40°C|IH||−<br>−||0.5<br>−||5.0<br>10|mA|
|Latch Current (Note 4)<br>TC= 25°C<br>(VAK= 7.0 V, Ig = 200�A)<br>TC= −40°C|IL||−<br>−||0.6<br>−||10<br>15|mA|
|Gate Trigger Voltage (Note 4)<br>TC= 25°C<br>(VAK= 7.0 Vdc, RL= 100�)<br>TC= −40°C|VGT||−<br>−||0.62<br>−||0.8<br>1.2|V|
|**DYNAMIC CHARACTERISTICS**|||||||||
|Critical Rate of Rise of Off−State Voltage<br>(VD= Rated VDRM, Exponential Waveform, RGK= 1 k�,TJ= 110°C)|dV/dt||20||35||−|V/�s|
|Critical Rate of Rise of On−State Current<br>(IPK= 20 A; Pw = 10�sec; diG/dt = 1 A/�sec, Igt = 20 mA)|di/dt||−||−||50|A/�s|



- *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 

3. RGK = 1000 � included in measurement. 

4. Does not include RGK in measurement. 

**http://onsemi.com** 

**2** 

**MCR100 Series** 

## **Voltage Current Characteristic of SCR** 

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+ Current<br>Anode +<br>Symbol Parameter VTM<br>VDRM Peak Repetitive Off State Forward Voltage<br>on state<br>IDRM Peak Forward Blocking Current<br>VRRM Peak Repetitive Off State Reverse Voltage IRRM at VRRM IH<br>IRRM Peak Reverse Blocking Current<br>VTM Peak on State Voltage + Voltage<br>IH Holding Current Reverse Blocking Region IDRM at VDRM<br>(off state) Forward Blocking Region<br>(off state)<br>Reverse Avalanche Region<br>Anode −<br>100 1.0<br>90 0.9<br>80<br>0.8<br>70<br>0.7<br>60<br>0.6<br>50<br>0.5<br>40<br>0.4<br>30<br>20 0.3<br>10 0.2<br>−40 −25 −10 5 20 35 50 65 80 95 110 −40 −25 −10 5 20 35 50 65 80 95 110<br>TJ, JUNCTION TEMPERATURE ( ° C) TJ, JUNCTION TEMPERATURE ( ° C)<br>�<br>GATE TRIGGER CURRENT (   A)<br>GATE TRIGGER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 1. Typical Gate Trigger Current versus Junction Temperature** 

**Figure 2. Typical Gate Trigger Voltage versus Junction Temperature** 

**http://onsemi.com** 

**3** 

**MCR100 Series** 

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1000<br>100<br>10<br>−40 −25 −10 5 20 35 50 65 80 95 110<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>�<br>HOLDING CURRENT (   A)<br>**----- End of picture text -----**<br>


**Figure 3. Typical Holding Current versus Junction Temperature** 

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1000<br>100<br>10<br>−40 −25 −10 5 20 35 50 65 80 95 110<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>�<br>LATCHING CURRENT (   A)<br>**----- End of picture text -----**<br>


**Figure 4. Typical Latching Current versus Junction Temperature** 

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120 10<br>MAXIMUM @ TJ = 25 ° C<br>110<br>MAXIMUM @ TJ = 110 ° C<br>100<br>90<br>DC<br>80 1<br>70 180 °<br>60<br>50<br>30 ° 60 ° 90 ° 120 °<br>40 0.1<br>0 0.1 0.2 0.3 0.4 0.5 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5<br>IT(RMS), RMS ON-STATE CURRENT (AMPS) VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)<br>C)<br>° IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)<br>TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (<br>**----- End of picture text -----**<br>


**Figure 5. Typical RMS Current Derating** 

**Figure 6. Typical On−State Characteristics** 

**http://onsemi.com** 

**4** 

**MCR100 Series** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package Code**|**Shipping**†|
|MCR100−003|TO−92 (TO−226)|5000 Units / Box|
|MCR100−004|||
|MCR100−006|||
|MCR100−008|||
|MCR100−3RL||2000 / Tape & Reel|
|MCR100−6RL|||
|MCR100−6RLRA|||
|MCR100−6RLRM||2000 / Tape & Ammo Pack|
|MCR100−6ZL1|||
|MCR100−8RL||2000 / Tape & Reel|
|MCR100−3G|TO−92 (TO−226)<br>(Pb−Free)|5000 Units / Box|
|MCR100−4G|||
|MCR100−6G|||
|MCR100−8G|||
|MCR100−3RLG||2000 / Tape & Reel|
|MCR100−6RLG|||
|MCR100−6RLRAG|||
|MCR100−4RLRMG||2000 / Tape & Ammo Pack|
|MCR100−6RLRMG|||
|MCR100−6ZL1G|||
|MCR100−8RLG||2000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**http://onsemi.com** 

**5** 

**MCR100 Series** 

## **TO−92 EIA RADIAL TAPE IN BOX OR ON REEL** 

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**----- Start of picture text -----**<br>
H2A H2A<br>H2B H2B<br>H<br>W2<br>H4 H5 T1<br>L1<br>H1<br>W1 W<br>L T<br>F1 T2<br>F2<br>P2 P2 D<br>P1<br>P<br>**----- End of picture text -----**<br>


**Figure 7. Device Positioning on Tape** 

|**Symbol**|**Item**|**Specification**|**Specification**|**Specification**|**Specification**|
|---|---|---|---|---|---|
|||**Inches**||**Millimeter**||
|||**Min**|**Max**|**Min**|**Max**|
|D|Tape Feedhole Diameter|0.1496|0.1653|3.8|4.2|
|D2|Component Lead Thickness Dimension|0.015|0.020|0.38|0.51|
|F1, F2|Component Lead Pitch|0.0945|0.110|2.4|2.8|
|H|Bottom of Component to Seating Plane|.059|.156|1.5|4.0|
|H1|Feedhole Location|0.3346|0.3741|8.5|9.5|
|H2A|Deflection Left or Right|0|0.039|0|1.0|
|H2B|Deflection Front or Rear|0|0.051|0|1.0|
|H4|Feedhole to Bottom of Component|0.7086|0.768|18|19.5|
|H5|Feedhole to Seating Plane|0.610|0.649|15.5|16.5|
|L|Defective Unit Clipped Dimension|0.3346|0.433|8.5|11|
|L1|Lead Wire Enclosure|0.09842|—|2.5|—|
|P|Feedhole Pitch|0.4921|0.5079|12.5|12.9|
|P1|Feedhole Center to Center Lead|0.2342|0.2658|5.95|6.75|
|P2|First Lead Spacing Dimension|0.1397|0.1556|3.55|3.95|
|T|Adhesive Tape Thickness|0.06|0.08|0.15|0.20|
|T1|Overall Taped Package Thickness|—|0.0567|—|1.44|
|T2|Carrier Strip Thickness|0.014|0.027|0.35|0.65|
|W|Carrier Strip Width|0.6889|0.7481|17.5|19|
|W1|Adhesive Tape Width|0.2165|0.2841|5.5|6.3|
|W2|Adhesive Tape Position|.0059|0.01968|.15|0.5|



NOTES: 

1. Maximum alignment deviation between leads not to be greater than 0.2 mm. 

2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. 

3. Component lead to tape adhesion must meet the pull test requirements. 

4. Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 

5. Hold down tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 

6. No more than 1 consecutive missing component is permitted. 

7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component. 

8. Splices will not interfere with the sprocket feed holes. 

**http://onsemi.com** 

**6** 

**MCR100 Series** 

## **PACKAGE DIMENSIONS** 

**TO−92 (TO−226)** CASE 29−11 ISSUE AM 

NOTES: 

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A<br>fe B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI<br>BULK PACK Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R<br>IS UNCONTROLLED.<br>4. LEAD DIMENSION IS UNCONTROLLED IN P AND<br>P BEYOND DIMENSION K MINIMUM.<br>L<br>SEATINGPLANE 7in K DIM MININCHESMAX MILLIMETERSMIN MAX<br>A 0.175 0.205 4.45 5.20<br>B 0.170 0.210 4.32 5.33<br>C 0.125 0.165 3.18 4.19<br>i — D 0.016 0.021 0.407 0.533<br>X X D G 0.045 0.055 1.15 1.39<br>G H 0.095 0.105 2.42 2.66<br>J 0.015 0.020 0.39 0.50<br>‘2 H J Sees K 0.500 --- 12.70 ---<br>L 0.250 --- 6.35 ---<br>V C N 0.080 0.105 2.04 2.66<br>P --- 0.100 --- 2.54<br>SECTION X−X R 0.115 --- 2.93 ---<br>1 N V 0.135 --- 3.43 ---<br>N<br>R te A B BENT LEAD NOTES:1. DIMENSIONING AND TOLERANCING PER<br>TAPE & REEL ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>AMMO PACK 3. CONTOUR OF PACKAGE BEYOND<br>ia DIMENSION R IS UNCONTROLLED.<br>4. LEAD DIMENSION IS UNCONTROLLED IN P<br>P AND BEYOND DIMENSION K MINIMUM.<br>T<br>MILLIMETERS<br>SEATING<br>PLANE K DIM MIN MAX<br>A 4.45 5.20<br>B 4.32 5.33<br>C 3.18 4.19<br>ae D 0.40 0.54<br>ai X X D G 2.40 2.80<br>G KJ 12.700.39 0.50---<br>J N 2.04 2.66<br>V C RP 1.502.93 4.00---<br>a “ } a ide =4 = V 3.43 ---<br>SECTION X−X<br>1 N STYLE 10:<br>PIN 1. CATHODE<br>2. GATE<br>ican<br>3. ANODE<br>**----- End of picture text -----**<br>


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## **PUBLICATION ORDERING INFORMATION** 

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**MCR100/D** 

**7**