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MCO100-12IO1
Thyristor Module, 99 A, 1200 V
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Thyristors - SCR Modules
- SCR Module Type:Single SCR; Peak Repetitive Off-State Voltage, Vdrm:1.2kV; Gate Trigger Current Max, Igt:100mA; Current It av:99A; On State RMS Current IT(rms):156A; Peak Non Rep Surge Current Its
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 4Pins
- Product Range: -
- SCR Module Type: Single SCR
- Thyristor Mounting: Panel
- On State RMS Current: 156A
- Thyristor Case Style: SOT-227B
- Average Forward Current: 99A
- Gate Trigger Current Max: 100mA
- Gate Trigger Voltage Max: 1.5V
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 1.2kV
- Peak Repetitive Off State Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 27.75 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **MCO100-12io1** ## **Thyristor** **VRRM** _**=**_ **1200 V I TAV** _**=**_ **101 A VT** _**=**_ **1.3 V** ## Single Thyristor ## **Part number** **MCO100-12io1** **==> picture [66 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Backside: isolated<br>**----- End of picture text -----**<br> **==> picture [95 x 49] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1/4<br>2<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Thyristor for line frequency - Planar passivated chip - Long-term stability ## **Applications:** - Line rectifying 50/60 Hz - Softstart AC motor control - DC Motor control - Power converter - AC power control - Lighting and temperature control ## **Package:** SOT-227B (minibloc) - Isolation Voltage: V~3000 - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Base plate: Copper internally DCB isolated - Advanced power cycling ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c © 2019 IXYS all rights reserved **MCO100-12io1** |**Thyristor**|**Thyristor**|**Ratings**|**Ratings**|**Ratings**|**Ratings**|**Ratings**| |---|---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|||**min.**|**typ.**|**max.**|**Unit**| |**V**<br>**RSM/DSM**<br>_max. non-repetitive reverse/forward blocking voltage_||T = 25°C<br>VJ|||1300|V| |**V**<br>**RRM/DRM**<br>_max. repetitive reverse/forward blocking voltage_||T = 25°C<br>VJ|||1200|V| |**I**<br>**R/D**<br>_reverse current, drain current_|V = V<br>V = V<br>1200<br>1200<br>R/D<br>R/D|T = 25°C<br>VJ<br>T = °C<br>VJ<br>125|||100<br>10|mA<br>µA| |**VT**<br>_forward voltage drop_|I = A<br>T<br>100<br>I = A<br>200<br>T|T = 25°C<br>VJ|||1.31<br>1.66|V<br>V| ||I = A<br>T<br>100<br>I = A<br>200<br>T|T = °C<br>VJ<br>125|||1.30<br>1.74|V<br>V| |**I**<br>**I**<br>_RMS forward current_<br>**T(RMS)**<br>**TAV**<br>_average forward current_|T = °C<br>C<br>80<br>180° sine|T = °C<br>VJ<br>150|||101<br>160|A<br>A| |**VT0**<br>**rT**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>150|||0.85<br>4.5|V<br>mΩ| |**R**<br>**thJC**<br>_thermal resistance junction to case_|||||0.35|K/W| |**RthCH**<br>_thermal resistance case to heatsink_||||0.1||K/W| |**Ptot**<br>_total power dissipation_||T = 25°C<br>C|||350|W| |**ITSM**<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = 45°C<br>VJ<br>V = 0 V<br>R|||1.40<br>1.51|kA<br>kA| ||t = 10 ms; (50 Hz), sine|T = °C<br>VJ<br>150|||1.19<br>1.29|kA<br>kA| ||<br>t = 8,3 ms; (60 Hz), sine|V = 0 V<br>R||||| |**I²t**<br>_value for fusing_|t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = 45°C<br>V = 0 V<br>VJ<br>R|||9.80<br>9.49|kA²s<br>kA²s| ||t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = °C<br>150<br>V = 0 V<br>VJ<br>R|||7.08<br>6.87|kA²s<br>kA²s| |**CJ**<br>_junction capacitance_|V = V<br>400<br>f = 1 MHz<br>R|T = 25°C<br>VJ||74||pF| |**PGM**<br>_max. gate power dissipation_<br>**PGAV**<br>_average gate power dissipation_|t = 30 µs<br>P<br>t =<br>P<br>300 µs|T = °C<br>C<br>150|||10<br>5<br>0.5|W<br>W<br>W| |**(di/dt)cr**<br>_critical rate of rise of current_|repetitive, I =<br>TVJ = 150°C; f = 50 Hz<br>t = µs;<br>I<br>A; V =⅔V<br>300 A<br>T<br>P<br>G =<br>0.3<br>di /dt<br>A/µs;<br>G<br>= 0.3<br>DRM<br>non-repet., I = 100 A<br>T<br>200|repetitive, I =<br>300 A<br>T|||150|A/µs| ||||||500|A/µs| |**(dv/dt)**<br>_critical rate of rise of voltage_<br>**cr**|T<br>= 150°C<br>R =∞; method 1 (linear voltage rise)<br>VJ<br>V =⅔VDRM<br>GK||||1000|V/µs| |**VGT**<br>_gate trigger voltage_<br>**IGT**<br>_gate trigger current_|V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ<br>V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ||||1.5<br>100<br>1.6<br>200|V<br>mA<br>V<br>mA| |**VGD**<br>_gate non-trigger voltage_<br>**IGD**<br>_gate non-trigger current_|T<br>=<br>°C<br>VJ<br>V =⅔V<br>D<br>DRM<br>150||||0.2<br>10|V<br>mA| |_latching current_<br>**IL**|T<br>=<br>°C<br>VJ<br>25<br>t<br>µs<br>p =<br>10<br>I<br>A;<br>=<br>03<br>di /dt<br>A/s<br><br>=<br>03||||450|mA| ||G <br>.<br> <br>µ<br>G<br><br>.|||||| |_holding current_<br>**IH**|T<br>=<br>°C<br>VJ<br>25<br>V = 6 V<br>D<br>R =∞<br>GK||||200|mA| |_gate controlled delay time_<br>**tgd**|T<br>=<br>°C<br>VJ<br>25<br>I<br>A;<br>G =<br>0.3<br>di /dt<br>A/µs<br>G<br>=<br>0.3<br>V = ½ V<br>D<br>DRM||||2|µs| |_turn-off time_<br>**tq**|T<br>=<br>°C<br>VJ<br>di/dt =<br>A/µs<br>10<br>dv/dt =<br>V/µs<br>15<br>V =<br>R<br>100 V; I<br>A;<br>T = 100<br>V =⅔VDRM<br>t<br>µs<br>p = 200<br>125|||150||µs| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c © 2019 IXYS all rights reserved **MCO100-12io1** |**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**|**Ratings**<br>**Package**<br>**SOT-227B (minibloc)**| |---|---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|||**min.**|**typ.**|**max.**|**Unit**| |**I RMS**<br>_RMS current_<br>per terminal<br>**_1)_**|||||150|A| |**TVJ**<br>_virtual junction temperature_|||-40||150|°C| |**Top**<br>_operation temperature_|||-40||125|°C| |**Tstg**<br>_storage temperature_|||-40||150|°C| |**Weight**||||30||g| |**M D**<br>_mounting torque_<br>**M T**<br>_terminal torque_|||1.1||1.5|Nm<br>Nm| ||||1.1||1.5|| |**dSpp/App**<br>_creepage distance on surface | striking distance through air_<br>**dSpb/Apb**<br>_terminal to backside_<br>_terminal to terminal_||10.5<br>8.6|3.2<br>6.8|||mm<br>mm| |**V**<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I≤1 mA<br>ISOL<br>**ISOL**|||3000|||V<br>V| ||||2500|||| |1)IRMSis typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product<br>with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.||||||| 1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. **==> picture [192 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking<br>Part<br>Number<br>Logo XXXXX ®<br>UL<br>Date � yywwZ 1234<br>Code<br>Location Lot#<br>**----- End of picture text -----**<br> **==> picture [215 x 78] intentionally omitted <==** **==> picture [415 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.<br>Standard MCO100-12io1 MCO100-12io1 Tube 10 500605<br>**----- End of picture text -----**<br> **==> picture [341 x 68] intentionally omitted <==** **----- Start of picture text -----**<br> Equivalent Circuits for Simulation * on die level T =VJ 150°C<br>I V0 R 0 Thyristor<br>V 0 max threshold voltage 0.85 V<br>R0 max slope resistance * 2.4 mΩ<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c © 2019 IXYS all rights reserved **MCO100-12io1** ## **Outlines SOT-227B (minibloc)** **==> picture [105 x 55] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1/4<br>2<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c © 2019 IXYS all rights reserved **MCO100-12io1** ## **Thyristor** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 200 1200<br>50 Hz, 80% VRRM 10000 VR = 0 V<br>160<br>1000<br>IT 120 ITSM TVJ = 45°C I [2] t T VJ = 45°C<br>800 TVJ = 125°C<br>[A] 80 [A] TVJ = 125°C [A [2] s]<br>600<br>40 125°C<br>150°C TVJ = 25°C<br>0 400 1000<br>0,4 0,8 1,2 1,6 2,0 0,01 0,1 1 1 2 3 4 5 6 7 8 910<br>VT [V] t [s] t [ms]<br>Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I [2] t versus time (1-10 ms)<br>10 1000 180<br>1: IGD, TVJ = 125°C dc =<br>2: I GT , T VJ = 25°C 160 1<br>3: I GT , T VJ = -40°C 0.5<br>6 140 0.4<br>5<br>0.33<br>4 100 120 0.17<br>3 I<br>VG 2 tgd typ. Limit T(AV)M 100 0.08<br>1 1<br>[A] 80<br>[V] [µs]<br>10 60<br>TVJ = 125°C<br>40<br>IGD, TVJ = 125°C 5: P 4: P GAVGM = = 0.5 W 5 W 20<br>0,1 6: PGM = 10 W 1 0<br>1 10 100 1000 10000 10 100 1000 0 25 50 75 100 125 150<br>IG [mA] IG [mA] TC [°C]<br>Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time Fig. 6 Max. forward current<br>at case temperature<br>200 0,4<br>dc =<br>1<br>0.5<br>150 0.4 RthHA 0,3<br>0.33 0.2<br>0.17 0.4<br>P(AV) 0.08 0.6 ZthJC<br>0.8<br>100 1.0 0,2<br>[W] 2.0 Rthi [K/W] ti [s]<br>[K/W]<br>0.025 0.011<br>50 0,1 0.030 0.002<br>0.050 0.027<br>0.085 0.500<br>0.160 0.180<br>0 0,0<br>0 20 40 60 80 100 120 0 50 100 150 10 [0] 10 [1] 10 [2] 10 [3] 10 [4]<br>IT(AV) [A] Tamb [°C] t [ms]<br>Fig. 7a Power dissipation versus direct output current Fig. 8 Transient thermal impedance junction to case<br>Fig. 7b and ambient temperature<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c © 2019 IXYS all rights reserved
Updated at June 7, 2026
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