MCH6662-TL-W

## **MCH6662** ~~©~~ **Power MOSFET** www.onsemi.com **20V, 160m** Ω **, 2A, Dual N-Channel** 

## **Features** 

- ON-Resistance Nch : RDS(on)1=120mΩ (typ) 

- 1.8V Drive 

- ESD Diode - Protected Gate 

- Pb-Free, Halogen Free and RoHS Compliance 

## **Specifications** 

**Absolute Maximum Ratings** at Ta=25°C 

|**Specifications**<br>**Absolute Maximum Ratings**at Ta=25°C|at Ta=25°C||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Value|Unit|
|Drain-to-Source Voltage|VDSS||20|V|
|Gate-to-Source Voltage|VGSS||±10|V|
|Drain Current (DC)|ID||2.0|A|
|Drain Current (Pulse)|IDP|PW≤10μs, dutycycle≤1%|8.0|A|
|Power Dissipation|PD|When mounted on ceramic substrate (900mm<br>2×0.8mm) 1unit|0.8|W|
|Junction Temperature|Tj||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ~~OO~~ **Thermal Resistance Ratings** Parameter Symbol Value Unit ~~ee~~ When mounted on ceramic substrate (900mmJunction to Ambient 2×0.8mm) 1unit RθJA 156.25 °C/W 

**Product & Package Information** 

- Package 

: MCPH6 

- JEITA, JEDEC : SC-88, SC-70-6, SOT-363 

- Minimum Packing Quantity : 3,000 pcs./reel 

## **Packing Type : TL** 

## **Marking** 

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XP<br>TL<br>LOT No. LOT No.<br>**----- End of picture text -----**<br>


## **Electrical Connection** 

6 5 4 ae 1 2 3 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 6 of this data sheet. 

©Semiconductor Components Industries, LLC, 2015 **January 2015 - Rev. 1** 

Publication Order Number: **MCH6662/D** 

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**MCH6662** 

## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Value|||Unit|
||||min|typ|max||
|Drain-to-Source Breakdown Voltage|V(BR)DSS|ID=1mA, VGS=0V|20|||V|
|Zero-Gate Voltage Drain Current|IDSS|VDS=20V, VGS=0V|||1|μA|
|Gate-to-Source Leakage Current|IGSS|VGS=±8V, VDS=0V|||±10|μA|
|Gate Threshold Voltage|VGS(th)|VDS=10V, ID=1mA|0.4||1.3|V|
|Forward Transconductance|gFS|VDS=10V, ID=1A||1.9||S|
|Static Drain-to-Source On-State Resistance|RDS(on)1|ID=1.0A, VGS=4.5V||120|160|mΩ|
||RDS(on)2|ID=0.5A, VGS=2.5V||170|240|mΩ|
||RDS(on)3|ID=0.1A, VGS=1.8V||255|380|mΩ|
|Input Capacitance|Ciss|VDS=10V, f=1MHz||128||pF|
|Output Capacitance|Coss|||28||pF|
|Reverse Transfer Capacitance|Crss|||21||pF|
|Turn-ON Delay Time|td(on)|See specifed Test Circuit.||5.1||ns|
|Rise Time|tr|||11||ns|
|Turn-OFF Delay Time|td(off)|||14.5||ns|
|Fall Time|tf|||12||ns|
|Total Gate Charge|Qg|VDS=10V, VGS=4.5V, ID=2A||1.8||nC|
|Gate-to-Source Charge|Qgs|||0.3||nC|
|Gate-to-Drain “Miller” Charge|Qgd|||0.55||nC|
|Forward Diode Voltage|VSD|IS=2A, VGS=0V||0.85|1.2|V|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **Switching Time Test Circuit** 

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VIN VDD=10V<br>4.5V<br>0V<br>ID=1.0A<br>VIN RL=10Ω<br>D VOUT<br>PW=10μs<br>D.C.≤1%<br>G<br>MCH6662<br>P.G 50Ω S<br>**----- End of picture text -----**<br>


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**MCH6662** 

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ID  --  VDS ID  --  VGS<br>2.0 2.5<br>Ta=25°C VDS=10V<br>2.0<br>1.5<br>1.5V<br>1.5<br>1.0<br>1.0<br>0.5<br>0.5<br>0 0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>Drain-to-Source Voltage, VDS  --  V IT16372 Gate-to-Source Voltage, VGS  --  V IT16373<br>RDS(on)  --  VGS RDS(on)  --  Ta<br>600 600<br>Ta=25°C<br>ID=0.1A<br>500 0.5A 500<br>1A<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0 1 2 3 4 5 6 7 8 9 10 --60 --40 --20 0 20 40 60 80 100 120 140 160<br>Gate-to-Source Voltage, VGS  --  V IT16712 Ambient Temperature, Ta  --  °C IT16713<br>gFS --  ID IS  --  VSD<br>10 10<br>7 VDS=10V 75 VGS=0V<br>3<br>5 2<br>3 1.0<br>7<br>5<br>2<br>3<br>2<br>1.0 0.1<br>7<br>7 5<br>3<br>5<br>2<br>3 0.01<br>7<br>5<br>2<br>3<br>2<br>0.1 0.001<br>0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 0 0.2 0.4 0.6 0.8 1.0 1.2<br>Drain Current, ID  --  A HD16643 Forward Diode Voltage, VSD  --  V HD16377<br>SW Time  --  ID Ciss,  Coss,  Crss  --  VDS<br>1000 1000<br>7 VDD=10V f=1MHz<br>7<br>5 VGS=4.5V<br>5<br>3<br>2<br>3<br>100 2<br>7<br>5<br>3 100<br>2 7<br>10 5<br>7 td(on)<br>5 3<br>3 2<br>2<br>1.0 10<br>0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 0 2 4 6 8 10 12 14 16 18 20<br>Drain Current, ID  --  A IT16644 Drain-to-Source Voltage, VDS  --  V IT16379<br>tf<br>VGS=1.2V<br>Ciss<br>td(off)<br>Crss<br>Coss<br>VGS=4.5V, ID=1.0A<br>VGS=2.5V, ID=0.5A<br>VGS=1.8V, ID=0.1A<br>tr<br>°C<br>75<br>°C<br>Ta= --25<br>°C<br>25<br>Ta=75°C<br>25°C<br>--25°C<br>1.8V<br>°C<br>Ta=75<br>2.5V<br>°C<br>25<br>°C<br>--25<br>4.5V<br>8.0V<br>6.0V<br>Drain Current, ID  --  A Drain Current, ID  --  A<br>Ω Ω<br>Static Drain-to-Source On-State Resistance, RDS(on)  --  m Static Drain-to-Source On-State Resistance, RDS(on)  --  m<br>  --  S<br>gFS<br>Source Current, IS  --  A<br>Forward Transconductance,<br>Ciss,  Coss,  Crss  --  pF<br>Switching Time, SW Time  --  ns<br>**----- End of picture text -----**<br>


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**MCH6662** 

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VGS  --  Qg S O A<br>4.5 10<br>4.0 ID=2AVDS=10V 75 IDP=8A (PW≤10μs)≤10μs)10μs)μs)s)<br>3.5 32 ID=2A<br>3.0 1.0<br>7<br>2.5 5<br>3<br>2.0 2 Operation in this<br>area is limited by RDS(on).<br>1.5 0.1<br>7<br>1.0 5<br>3 Ta=25°C°CC<br>0.5 2 Single pulse<br>0 0.01 When mounted on ceramic substrate (900mm [[2]] ×0.8mm) 1unit0.8mm) 1unit<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7<br>Total Gate Charge, Qg  --  nC IT16380 Drain-to-Source Voltage, VDS  --  V HD16714<br>PD  --  Ta<br>1.0<br>When mounted on ceramic substrate<br>(900mm [2] ×0.8mm) 1unit<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta  --  °C HD16715<br>RθJA  --  Pulse Time<br>1000<br>7<br>5<br>3<br>2<br>100<br>7<br>5<br>3<br>2<br>10<br>7<br>5<br>3<br>2<br>1.0<br>7<br>5<br>3 When mounted on ceramic substrate<br>2 (900mm [2] ×0.8mm)1unit<br>0.1<br>0.000001 2 3 5 70.00001 2 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10<br>Pulse Time, PT  --  s HD150106<br>0.2<br>0.01<br>Duty Cycle=0.5<br>0.05<br>0.02<br>0.1<br>Single Pulse<br>1ms<br>100<br>μss<br>100ms<br>DC operation<br>10ms<br>Drain Current, ID  --  A<br>Gate-to-Source Voltage, VGS  --  V<br>Power Dissipation, PD  --  W<br>JA  --  ºC/W<br>θ<br>Thermal Resistance, R<br>**----- End of picture text -----**<br>


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S O A<br>10<br>575 IDP=8A (PW≤10μs)≤10μs)10μs)μs)s)<br>ID=2A<br>232<br>1.0<br>7<br>5<br>3<br>2 Operation in this<br>area is limited by RDS(on).<br>0.1<br>7<br>5<br>3 Ta=25°C°CC<br>2 Single pulse<br>0.01 When mounted on ceramic substrate (900mm [[2]] ×0.8mm) 1unit0.8mm) 1unit<br>0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100<br>Drain-to-Source Voltage, VDS  --  V HD16714<br>1ms<br>100<br>μss<br>100ms<br>DC operation<br>10ms<br>Drain Current, ID  --  A<br>**----- End of picture text -----**<br>


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**MCH6662** 

## **Package Dimensions** 

## unit : mm 

MCH6662-TL-H, MCH6662-TL-W 

## **SC-88FL / MCPH6** 

CASE 419AS ISSUE O 

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1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 

## **Recommended Soldering Footprint** 

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0.4<br>0.65 0.65<br>0.6<br>2.1<br>**----- End of picture text -----**<br>


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**MCH6662** 

## **ORDERING INFORMATION** 

|Device|Package|Shipping|memo|
|---|---|---|---|
|MCH6662-TL-H|MCPH6|3,000pcs./reel|Pb-Free and Halogen Free|
|MCH6662-TL-W||||



Note on usage : Since the  MCH6662 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 

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