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MCD312-16IO1
THYRISTOR/DIODE MODULE, 320A, 1.6KV
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Thyristors - SCR Modules
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 5Pins
- Product Range: -
- SCR Module Type: Series Connected - SCR / Diode
- Thyristor Mounting: Panel
- On State RMS Current: 520A
- Thyristor Case Style: Y1
- Average Forward Current: 320A
- Gate Trigger Current Max: 150mA
- Gate Trigger Voltage Max: 2V
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 1.6kV
- Peak Repetitive Off State Voltage: 1.6kV
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 137.31 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **MCD312-16io1** ## **Thyristor \ Diode Module** **VRRM** _**=**_ **2x 1600 V I TAV** _**=**_ **320 A VT** _**=**_ **1.06 V** ## Phase leg ## **Part number** **MCD312-16io1** **==> picture [66 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Backside: isolated<br>**----- End of picture text -----**<br> **==> picture [108 x 15] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1 2<br>5 4<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - International standard package - Direct copper bonded Al2O3-ceramic with copper base plate - Planar passivated chip - Keyed gate/cathode twin pins ## **Applications:** - Motor control, softstarter - Power converter - Heat and temperature control for industrial furnaces and chemical processes - Lighting control - Solid state switches ## **Package:** Y1 - Isolation Voltage: V~3600 - Industry standard outline - RoHS compliant - Soldering pins for PCB mounting - Base plate: Copper internally DCB isolated - Advanced power cycling ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f © 2019 IXYS all rights reserved **MCD312-16io1** |**Rectifier**|**Rectifier**|**Ratings**|**Ratings**|**Ratings**|**Ratings**|**Ratings**| |---|---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|||**min.**|**typ.**|**max.**|**Unit**| |**V**<br>**RSM/DSM**<br>_max. non-repetitive reverse/forward blocking voltage_||T = 25°C<br>VJ|||1700|V| |**V**<br>**RRM/DRM**<br>_max. repetitive reverse/forward blocking voltage_||T = 25°C<br>VJ|||1600|V| |**I**<br>**R/D**<br>_reverse current, drain current_|V = V<br>V = V<br>1600<br>1600<br>R/D<br>R/D|T = 25°C<br>VJ<br>T = °C<br>VJ<br>140|||1<br>40|mA<br>mA| |**VT**<br>_forward voltage drop_|I = A<br>T<br>300<br>I = A<br>600<br>T|T = 25°C<br>VJ|||1.12<br>1.32|V<br>V| ||I = A<br>T<br>300<br>I = A<br>600<br>T|T = °C<br>VJ<br>125|||1.06<br>1.29|V<br>V| |**I**<br>**I**<br>_RMS forward current_<br>**T(RMS)**<br>**TAV**<br>_average forward current_|T = °C<br>C<br>85<br>180° sine|T = °C<br>VJ<br>140|||320<br>520|A<br>A| |**VT0**<br>**rT**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>140|||0.80<br>0.68|V<br>mΩ| |**R**<br>**thJC**<br>_thermal resistance junction to case_|||||0.12|K/W| |**RthCH**<br>_thermal resistance case to heatsink_||||0.04||K/W| |**Ptot**<br>_total power dissipation_||T = 25°C<br>C|||960|W| |**ITSM**<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = 45°C<br>VJ<br>V = 0 V<br>R|||9.60<br>10.4|kA<br>kA| ||t = 10 ms; (50 Hz), sine|T = °C<br>VJ<br>140|||8.16<br>8.82|kA<br>kA| ||<br>t = 8,3 ms; (60 Hz), sine|V = 0 V<br>R||||| |**I²t**<br>_value for fusing_|t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = 45°C<br>V = 0 V<br>VJ<br>R|||460.8<br>447.4|kA²s<br>kA²s| ||t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = °C<br>140<br>V = 0 V<br>VJ<br>R|||332.9<br>323.3|kA²s<br>kA²s| |**CJ**<br>_junction capacitance_|V = V<br>400<br>f = 1 MHz<br>R|T = 25°C<br>VJ||438||pF| |**PGM**<br>_max. gate power dissipation_<br>**PGAV**<br>_average gate power dissipation_|t = 30 µs<br>P<br>t =<br>P<br>500 µs|T = °C<br>C<br>140|||120<br>60<br>20|W<br>W<br>W| |**(di/dt)cr**<br>_critical rate of rise of current_|repetitive, I =<br>TVJ = 140°C; f = 50 Hz<br>t = µs;<br>I<br>A; V =⅔V<br>960 A<br>T<br>P<br>G =<br>1<br>di /dt<br>A/µs;<br>G<br>=<br>1<br>DRM<br>non-repet., I = 320 A<br>T<br>200|repetitive, I =<br>960 A<br>T|||100|A/µs| ||||||500|A/µs| |**(dv/dt)**<br>_critical rate of rise of voltage_<br>**cr**|T<br>= 140°C<br>R =∞; method 1 (linear voltage rise)<br>VJ<br>V =⅔VDRM<br>GK||||1000|V/µs| |**VGT**<br>_gate trigger voltage_<br>**IGT**<br>_gate trigger current_|V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ<br>V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ||||2<br>150<br>3<br>220|V<br>mA<br>V<br>mA| |**VGD**<br>_gate non-trigger voltage_<br>**IGD**<br>_gate non-trigger current_|T<br>=<br>°C<br>VJ<br>V =⅔V<br>D<br>DRM<br>140||||0.25<br>10|V<br>mA| |_latching current_<br>**IL**|T<br>=<br>°C<br>VJ<br>25<br>t<br>µs<br>p =<br>30<br>I<br>A;<br>=045<br>di /dt<br>A/s<br><br>=045||||200|mA| ||G .<br> <br>µ<br>G<br> .|||||| |_holding current_<br>**IH**|T<br>=<br>°C<br>VJ<br>25<br>V = 6 V<br>D<br>R =∞<br>GK||||150|mA| |_gate controlled delay time_<br>**tgd**|T<br>=<br>°C<br>VJ<br>25<br>I<br>A;<br>G =<br>1<br>di /dt<br>A/µs<br>G<br>=<br>1<br>V = ½ V<br>D<br>DRM||||2|µs| |_turn-off time_<br>**tq**|T<br>=<br>°C<br>VJ<br>di/dt =<br>A/µs<br>10<br>dv/dt =<br>V/µs<br>50<br>V =<br>R<br>100 V; I<br>A;<br>T = 300<br>V =⅔VDRM<br>t<br>µs<br>p = 200<br>125|||200||µs| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f © 2019 IXYS all rights reserved **MCD312-16io1** |**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**| |---|---|---|---|---| |**I RMS**<br>_RMS current_<br>per terminal<br>~~To~~|~~To~~|~~To~~|600|A| |**TVJ**<br>_virtual junction temperature_<br>~~To~~|-40<br>~~To~~|~~To~~|140|°C| |**Top**<br>_operation temperature_|-40||125|°C| |**Tstg**<br>_storage temperature_|-40||125|°C| |**Weight**||680||g| |**M D**<br>_mounting torque_<br>**M T**<br>_terminal torque_<br>~~a~~|4.5<br>11<br>~~a~~|~~a~~|7<br>13|Nm<br>Nm| |**dSpp/App**<br>_creepage distance on surface | striking distance through air_<br>**dSpb/Apb**<br>_terminal to backside_<br>_terminal to terminal_<br>~~a~~|16.0<br>16.0<br>~~a~~|~~a~~||mm<br>mm| |**V**<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I≤1 mA<br>ISOL<br>**ISOL**|3600<br>3000|||V<br>V| **==> picture [191 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> Production<br>Index (PI)<br>Date Code<br>(DC)<br>Circuit<br>yywwAA<br>Part Number<br>Lot.No: xxxxxx<br>SFa<br>|—“=é#“@CSN<br>Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31),<br>blank (32), serial no.# (33-36)<br>**----- End of picture text -----**<br> |**Ordering**<br>~~SE~~|**Ordering Number**<br>**g**<br>~~SE~~|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**| |---|---|---|---|---|---| |Standard<br>~~SE~~|MCD312-16io1<br>~~SE~~|MCD312-16io1|Box|3|461857| **==> picture [341 x 65] intentionally omitted <==** **----- Start of picture text -----**<br> Equivalent Circuits for Simulation * on die level T =VJ 140°C<br>I V0 R 0 Thyristor<br>Om<br>V 0 max threshold voltage 0.8 V<br>R0 max slope resistance * 0.5 mΩ<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f © 2019 IXYS all rights reserved **MCD312-16io1** ## **Outlines Y1** **==> picture [423 x 423] intentionally omitted <==** **----- Start of picture text -----**<br> 3x M8<br>2.8 x 0.8<br>20 22.5 35 28.5<br>1<br>2 3<br>6.2<br>80<br>92<br>115<br> ±1<br>15<br>2<br>+0 -1,4<br>49 45<br>52 43<br>+0 -1,9<br>32<br>10<br>7<br>6<br>18 38 50<br>5<br>5<br>4<br>**----- End of picture text -----**<br> ## Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 3751 **==> picture [509 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1 2<br>5 4<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f © 2019 IXYS all rights reserved **MCD312-16io1** ## **Thyristor** **==> picture [508 x 658] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 10 [6] 600<br>VR = 0 V DC<br>50 Hz 180 ° sin<br>8000 80 % V RRM 500 120 °<br>TVJ = 45°C 60°<br>ITSM TVJ = 140°C TVJ = 45°C 400 30°<br>6000 I [2] dt I<br>TVJ = 140°C T(AV)M<br>[A] 10 [5] 300<br>[A]<br>4000 [A [2] s]<br>200<br>2000<br>100<br>0 10 [4] 0<br>0.001 0.01 0.1 1 1 10 0 25 50 75 100 125 150<br>t [s] t [ms] TC [°C]<br>Fig. 1 Surge overload current Fig. 2 I [2] dt versus time Fig. 3 Max. forward current<br>ITSM:Crest value, t: duration at case temperature<br>600 R0.06thKA K/W 10 1: I 2: I GTGT, , T TVJVJ = 140 = 25°°C C<br>500 0.1 3: I GT , T VJ = -40°C<br>0.2<br>0.3 6<br>400 0.4 3 5<br>Ptot 0.60.8 VG 1 2 4<br>300 1<br>DC<br>[W] 200 180 ° sin120 ° [V]<br> 60°<br> 30°<br>100 4: P GM = 20 W<br>IGD, TVJ = 140°C 5: PGM = 60 W<br>0 0.1 6: PGM = 120 W<br>0 100 200 300 400 500 0 25 50 75 100 125 150 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]<br>IT(AV)M [A] TA [°C] IG [A]<br>Fig. 4 Power dissipation versus on-state current and Fig. 5 Gate voltage & gate current<br>ambient temperature (per thyristor)<br>3000 100<br>RthKA K/W<br>0.02<br>2500<br>0.04<br>0.07<br>0.1<br>2000 0.15<br>Ptot 0.20.3 tgd 10 TVJ = 25°C<br>1500<br>[W] [µs]<br>Circuit<br>1000 B6<br>3xMCC312 or<br>3xMCD312 limit<br>500<br>typ.<br>1<br>0<br>0 200 400 600 800 0 25 50 75 100 125 150 0.01 0.1 1 10<br>IDAVM [A] TA [°C] IG [A]<br>Fig. 6 Three phase rectifier bridge: Power dissipation versus directoutput current and ambient temperature Fig. 7 Gate controlled delay time tgd<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f © 2019 IXYS all rights reserved **MCD312-16io1** ## **Rectifier** **==> picture [322 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 3000<br>RthKA K/W<br>2500 0.02<br>0.04<br>0.07<br>2000 0.1<br>Ptot 0.15<br>0.2<br>1500 0.3<br>[W]<br>1000 Circuit<br>W3<br>3xMCC312 or<br>3xMCD312<br>500<br>0<br>0 200 400 600 0 A25 50 75 100 125 150<br>IRMS [A] TA [[°C]]<br>**----- End of picture text -----**<br> Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature **==> picture [324 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 0.20<br>0.15<br>ZthJC<br>0.10<br> 30°<br>[K/W] 60°<br>120°<br>180°<br>0.05 DC<br>0.00<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]<br>t [s]<br>**----- End of picture text -----**<br> |RthJCfor|various conduct. angles d:| |---|---| |**d**|**RthJC [K/W]**| |DC|0.120| |180°|0.128| |120°|0.135| |60°|0.153| |30°|0.185| Constants for ZthJC calculation: **==> picture [75 x 47] intentionally omitted <==** **----- Start of picture text -----**<br> i Rthi [K/W] ti [s]<br>1 0.0058 0.00054<br>2 0.0310 0.098<br>3 0.0720 0.54<br>4 0.0112 12<br>**----- End of picture text -----**<br> Fig. 9 Transient thermal impedance junction to case (per thyristor) **==> picture [506 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 0.25<br>RthJK for various conduct. angles d:<br>d RthJK [K/W]<br>0.20 DC 0.160<br>180° 0.168<br>120° 0.175<br>0.15 60° 0.193<br>ZthJK 30° 0.225<br>0.10 30° Constants for ZthJK calculation:<br> 60°<br>[K/W] 120°180° i Rthi [K/W] ti [s]<br>0.05 DC 1 0.0058 0.00054<br>2 0.0310 0.098<br>3 0.0720 0.54<br>0.00 4 0.0114 12<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2] 5 0.0400 12<br>t [s]<br>**----- End of picture text -----**<br> Fig. 10 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f © 2019 IXYS all rights reserved
Updated at June 7, 2026
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