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MCC162-18IO1
THYRISTOR MODULE, 181A, 1.8KV
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Thyristors - SCR Modules
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 7Pins
- Product Range: -
- SCR Module Type: Series Connected - SCRs
- Thyristor Mounting: Panel
- On State RMS Current: 300A
- Thyristor Case Style: Y4
- Average Forward Current: 181A
- Gate Trigger Current Max: 150mA
- Gate Trigger Voltage Max: 2.5V
- Operating Temperature Max: 100°C
- Repetitive Peak Reverse Voltage: 1.8kV
- Peak Repetitive Off State Voltage: 1.8kV
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 35.24 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **MCC162-18io1** ## **Thyristor Module** **VRRM** _**=**_ **2x 1800 V I TAV** _**=**_ **181 A VT** _**=**_ **1.03 V** ## Phase leg ## **Part number** ## **MCC162-18io1** **==> picture [66 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Backside: isolated<br>**----- End of picture text -----**<br> **==> picture [173 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1 2<br>6 7 5 4<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Thyristor for line frequency - Planar passivated chip - Long-term stability - Direct Copper Bonded Al2O3-ceramic ## **Applications:** - Line rectifying 50/60 Hz - Softstart AC motor control - DC Motor control - Power converter - AC power control - Lighting and temperature control ## Y4 ## **Package:** - Isolation Voltage: V~3600 - Industry standard outline - RoHS compliant - Soldering pins for PCB mounting - Base plate: DCB ceramic - Reduced weight - Advanced power cycling ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c © 2019 IXYS all rights reserved **MCC162-18io1** |**Thyristor**|**Thyristor**|**Ratings**|**Ratings**|**Ratings**|**Ratings**|**Ratings**| |---|---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|||**min.**|**typ.**|**max.**|**Unit**| |**V**<br>**RSM/DSM**<br>_max. non-repetitive reverse/forward blocking voltage_||T = 25°C<br>VJ|||1900|V| |**V**<br>**RRM/DRM**<br>_max. repetitive reverse/forward blocking voltage_||T = 25°C<br>VJ|||1800|V| |**I**<br>**R/D**<br>_reverse current, drain current_|V = V<br>V = V<br>1800<br>1800<br>R/D<br>R/D|T = 25°C<br>VJ<br>T = °C<br>VJ<br>125|||300<br>10|mA<br>µA| |**VT**<br>_forward voltage drop_|I = A<br>T<br>150<br>I = A<br>300<br>T|T = 25°C<br>VJ|||1.09<br>1.25|V<br>V| ||I = A<br>T<br>150<br>I = A<br>300<br>T|T = °C<br>VJ<br>125|||1.03<br>1.25|V<br>V| |**I**<br>**I**<br>_RMS forward current_<br>**T(RMS)**<br>**TAV**<br>_average forward current_|T = °C<br>C<br>85<br>180° sine|T = °C<br>VJ<br>125|||181<br>300|A<br>A| |**VT0**<br>**rT**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>125|||0.88<br>1.15|V<br>mΩ| |**R**<br>**thJC**<br>_thermal resistance junction to case_|||||0.155|K/W| |**RthCH**<br>_thermal resistance case to heatsink_||||0.07||K/W| |**Ptot**<br>_total power dissipation_||T = 25°C<br>C|||645|W| |**ITSM**<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = 45°C<br>VJ<br>V = 0 V<br>R|||6.00<br>6.48|kA<br>kA| ||t = 10 ms; (50 Hz), sine|T = °C<br>VJ<br>125|||5.10<br>5.51|kA<br>kA| ||<br>t = 8,3 ms; (60 Hz), sine|V = 0 V<br>R||||| |**I²t**<br>_value for fusing_|t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = 45°C<br>V = 0 V<br>VJ<br>R|||180.0<br>174.7|kA²s<br>kA²s| ||t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = °C<br>125<br>V = 0 V<br>VJ<br>R|||130.1<br>126.3|kA²s<br>kA²s| |**CJ**<br>_junction capacitance_|V = V<br>400<br>f = 1 MHz<br>R|T = 25°C<br>VJ||273||pF| |**PGM**<br>_max. gate power dissipation_<br>**PGAV**<br>_average gate power dissipation_|t = 30 µs<br>P<br>t =<br>P<br>500 µs|T = °C<br>C<br>125|||120<br>60<br>8|W<br>W<br>W| |**(di/dt)cr**<br>_critical rate of rise of current_|repetitive, I =<br>TVJ = 125°C; f = 50 Hz<br>t = µs;<br>I<br>A; V =⅔V<br>540 A<br>T<br>P<br>G =<br>0.5<br>di /dt<br>A/µs;<br>G<br>= 0.5<br>DRM<br>non-repet., I = 180 A<br>T<br>200|repetitive, I =<br>540 A<br>T|||150|A/µs| ||||||500|A/µs| |**(dv/dt)**<br>_critical rate of rise of voltage_<br>**cr**|T<br>= 125°C<br>R =∞; method 1 (linear voltage rise)<br>VJ<br>V =⅔VDRM<br>GK||||1000|V/µs| |**VGT**<br>_gate trigger voltage_<br>**IGT**<br>_gate trigger current_|V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ<br>V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ||||2.5<br>150<br>2.6<br>200|V<br>mA<br>V<br>mA| |**VGD**<br>_gate non-trigger voltage_<br>**IGD**<br>_gate non-trigger current_|T<br>=<br>°C<br>VJ<br>V =⅔V<br>D<br>DRM<br>125||||0.2<br>10|V<br>mA| |_latching current_<br>**IL**|T<br>=<br>°C<br>VJ<br>25<br>t<br>µs<br>p =<br>30<br>I<br>A;<br>=<br>05<br>di /dt<br>A/s<br><br>=<br>05||||300|mA| ||G <br>.<br> <br>µ<br>G<br><br>.|||||| |_holding current_<br>**IH**|T<br>=<br>°C<br>VJ<br>25<br>V = 6 V<br>D<br>R =∞<br>GK||||200|mA| |_gate controlled delay time_<br>**tgd**|T<br>=<br>°C<br>VJ<br>25<br>I<br>A;<br>G =<br>0.5<br>di /dt<br>A/µs<br>G<br>=<br>0.5<br>V = ½ V<br>D<br>DRM||||2|µs| |_turn-off time_<br>**tq**|T<br>=<br>°C<br>VJ<br>di/dt =<br>A/µs<br>10<br>dv/dt =<br>V/µs<br>20<br>V =<br>R<br>100 V; I<br>A;<br>T = 300<br>V =⅔VDRM<br>t<br>µs<br>p = 200<br>100|||150||µs| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c © 2019 IXYS all rights reserved **MCC162-18io1** |**Symbol**<br>**Definition**<br>**Conditions**|**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**| |---|---|---|---|---|---| |**I RMS**<br>_RMS current_<br>per terminal<br>~~TT~~||~~TT~~|~~TT~~|300|A| |**TVJ**<br>_virtual junction temperature_<br>~~TT~~||-40<br>~~TT~~|~~TT~~|125|°C| |**Top**<br>_operation temperature_||-40||100|°C| |**Tstg**<br>_storage temperature_||-40||125|°C| |**Weight**|||150||g| |**M D**<br>_mounting torque_<br>**M T**<br>_terminal torque_<br>~~|~~||2.25<br>4.5<br>~~|~~|~~|~~|2.75<br>5.5|Nm<br>Nm| |**dSpp/App**<br>_creepage distance on surface | striking distance through air_<br>**dSpb/Apb**<br>_terminal to backside_<br>_terminal to terminal_|14.0<br>16.0<br>~~|~~|10.0<br>16.0<br>~~|~~|~~|~~||mm<br>mm| |**V**<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I≤1 mA<br>ISOL<br>**ISOL**||3600<br>3000|||V<br>V| **==> picture [185 x 52] intentionally omitted <==** **----- Start of picture text -----**<br> Date Code (DC) Circuit<br> + yywwAA<br>Production Part Number<br>Index (PI) Lot.No: xxxxxx<br>Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31),<br>blank (32), serial no.# (33-36)<br>**----- End of picture text -----**<br> **Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.** ~~ee~~ Standard MCC162-18io1 MCC162-18io1 Box 6 454613 **Equivalent Circuits for Simulation** _* on die level_ T =VJ 125°C I V0 ~~R~~ 0 **Thyristor** ~~On~~ **V 0 max** _threshold voltage_ 0.88 V **R0 max** _slope resistance *_ 0.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c © 2019 IXYS all rights reserved **MCC162-18io1** **==> picture [509 x 15] intentionally omitted <==** **----- Start of picture text -----**<br> Outlines Y4<br>**----- End of picture text -----**<br> **==> picture [509 x 483] intentionally omitted <==** **----- Start of picture text -----**<br> M6 2.8/0.8 MIN MAX MIN MAX<br>Dim.<br>a p [mm] [mm] [inch] [inch]<br>a 30.0 30.6 1.181 1.205<br>b typ. 0.25 typ. 0.010<br>c 64.0 65.0 2.520 2.559<br>d 6.5 7.0 0.256 0.275<br>e 4.9 5.1 0.193 0.201<br>c f f 28.6 29.2 1.126 1.150<br>A g 7.3 7.7 0.287 0.303<br>h<br>h 93.5 94.5 3.681 3.720<br>i q k i 79.5 80.5 3.130 3.169<br>j 4.8 5.2 0.189 0.205<br>1 2 3 C C k 33.4 34.0 1.315 1.339<br>o<br>l 16.7 17.3 0.657 0.681<br>m 22.7 23.3 0.894 0.917<br>B n 22.7 23.3 0.894 0.917<br>o 14.0 15.0 0.551 0.591<br>B p typ. 10.5 typ. 0.413<br>n m l<br>q 22.8 23.3 0.898 0.917<br>Optional accessories for modules r 1.8 2.4 0.071 0.041<br>Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red<br>Type ZY 180L (L = Left for pin pair 4/5)<br>UL 758, style 3751<br>Type ZY 180R (R = Right for pin pair 6/7)<br>A (3:1) B-B (1:1) j r C-C (1:1) g<br>b<br>DCB e<br>nd<br>11<br>8 9<br>10 6 7<br>5 4<br>**----- End of picture text -----**<br> **==> picture [509 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1 2<br>6 7 5 4<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c © 2019 IXYS all rights reserved **MCC162-18io1** ## **Thyristor** **==> picture [496 x 659] intentionally omitted <==** **----- Start of picture text -----**<br> 5000 10 [6] 320<br>50 Hz 280 DC<br>180° sin<br>4000 80% V RRM 120°<br>ITSM TVJ = 45°C 240 60°<br>TVJ = 125°C 30°<br>200<br>[A]3000 I [2] dt10 [5] TVJ = 45°C ITAVM 160<br>2000 T VJ = 125°C [A]<br>[A [2] s] 120<br>80<br>1000<br>40<br>0 10 [4] 0<br>0.001 0.01 0.1 1 1 10 0 25 50 75 100 125 150<br>t [s] t [ms] TC [°C]<br>Fig. 1 Surge overload current ITSM, Fig. 2 I [2] t versus time (1-10 ms) Fig. 3 Max. forward current<br>IFSM: Crest value, t: duration at case temperature<br>400 100<br>360 R0.3thKA K/W tp = 30 µs<br>320 0.4 tp = 500 µs<br>0.5 P GM = 120 W<br>280 0.6 60 W<br>Ptot 240 0.81.01.4 VG 10 PGAV = 8 W<br>200 1.8<br>[W] 160 DC180° sin [V]<br>120° 1<br>120 60°<br>80 30° IGT (TVJ = -40°C)<br>IGT (TVJ = 0°C)<br>40 I GT (T VJ = 25°C)<br>0 0.1 IGD<br>0 50 100 150 200 250 0 25 50 75 100 125 150 0.01 0.1 1 10<br>ITAVM [A] Ta [°C] IG [A]<br>Fig. 4 Power dissipation vs. on-state current & ambient temperature Fig. 5 Gate trigger characteristics<br>(per thyristor or diode)<br>100<br>1400 RthKA K/W TVJ = 25°C<br>0.03<br>1200 0.04<br>Circuit 0.06<br>B6 0.08<br>1000 3xMCC162 or 0.1 10<br>Ptot 800 3x MCD162 0.150.2 tgd<br>0.3<br>[W] 600 [μs] limit<br>1<br>400 typ.<br>200<br>0 0.1<br>0 100 200 300 400 500 0 25 50 75 100 125 150 0.01 0.1 1 10<br>IdAVM [A] T a [°C] IG [A]<br>Fig. 6 Three phase rectifier bridge: Power dissipation versus direct Fig. 7 Gate trigger delay time<br>output current and ambient temperature<br>125°C 25°C<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c © 2019 IXYS all rights reserved **MCC162-18io1** ## **Thyristor** **==> picture [324 x 417] intentionally omitted <==** **----- Start of picture text -----**<br> 1600<br>RthKA K/W<br>Circuit<br>W3 0.03<br>3xMCC162 or 0.04<br>1200 3xMCD162 0.06<br>0.08<br>0.1<br>0.15<br>Ptot 800 0.2<br>0.3<br>[W]<br>400<br>0<br>0 100 200 300 400 0 25 50 75 100 125 150<br>IRMS [A] Ta [°C]<br>Fig. 8 Three phase AC-controller: Power dissipation versus<br>RMS output current and ambient temperature<br>0.24<br>0.16<br>ZthJC 30°<br>60°<br>[K/W] 120°180°<br>0.08 DC<br>0.00<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]<br>t [s]<br>Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)<br>**----- End of picture text -----**<br> |RthJCfor various conduction angles d:|RthJCfor various conduction angles d:| |---|---| ||d<br>RthJC[K/W]| ||DC<br>0.155| ||180°<br>0.167| ||120°<br>0.176| ||60°<br>0.197| |30°<br>0.227<br>Constants for ZthJCcalculation:|| |i|Rthi[K/W]<br>ti[s]| |1|0.0072<br>0.001| |2|0.0188<br>0.080| |3|0.1290<br>0.200| **==> picture [502 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 0.3<br>RthJK for various conduction angles d:<br>d RthJK [K/W]<br> DC 0.225<br>180° 0.237<br>0.2<br>120° 0.246<br>30° 60° 0.267<br>ZthJK 120°60° 30° 0.297<br>180°<br>[K/W] 0.1 DC Constants for ZthJK calculation:<br>i Rthi [K/W] ti [s]<br>1 0.0072 0.001<br>2 0.0188 0.080<br>3 0.1290 0.200<br>0.0 4 0.0700 1.000<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]<br>t [s]<br>**----- End of picture text -----**<br> Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c © 2019 IXYS all rights reserved
Updated at April 24, 2026
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