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MCC132-12IO1
Thyristor Module, Series Connected , 300 A, 1.2 kV
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Thyristors - SCR Modules
- No. of Pins: 7Pins
- SCR Module Type: Series Connected - SCRs
- Thyristor Mounting: Panel
- Holding Current Max: 200mA
- On State RMS Current: 300A
- Thyristor Case Style: Y4
- Average Forward Current: 130A
- Average On State Current: 130A
- Gate Trigger Current Max: 150mA
- Gate Trigger Voltage Max: 2.5V
- Operating Temperature Max: 100°C
- Repetitive Peak Reverse Voltage: 1.2kV
- Peak Non Repetitive Surge Current: 4.75kA
- Peak Repetitive Off State Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 28.09 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**MCC132-12io1** ## **Thyristor Module** **VRRM** _**=**_ **2x 1200 V I TAV** _**=**_ **130 A VT** _**=**_ **1.08 V** ## Phase leg ## **Part number** ## **MCC132-12io1** **==> picture [66 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Backside: isolated<br>**----- End of picture text -----**<br> **==> picture [173 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1 2<br>6 7 5 4<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Thyristor for line frequency - Planar passivated chip - Long-term stability - Direct Copper Bonded Al2O3-ceramic ## **Applications:** - Line rectifying 50/60 Hz - Softstart AC motor control - DC Motor control - Power converter - AC power control - Lighting and temperature control ## Y4 ## **Package:** - Isolation Voltage: V~3600 - Industry standard outline - RoHS compliant - Soldering pins for PCB mounting - Base plate: DCB ceramic - Reduced weight - Advanced power cycling ## **Terms Conditions of usage:** The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; > - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160408b © 2016 IXYS all rights reserved **MCC132-12io1** |**Thyristor**|**Thyristor**|**Ratings**|**Ratings**|**Ratings**|**Ratings**|**Ratings**| |---|---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|||**min.**|**typ.**|**max.**|**Unit**| |**V**<br>**RSM/DSM**<br>_max. non-repetitive reverse/forward blocking voltage_||T = 25°C<br>VJ|||1300|V| |**V**<br>**RRM/DRM**<br>_max. repetitive reverse/forward blocking voltage_||T = 25°C<br>VJ|||1200|V| |**I**<br>**R/D**<br>_reverse current, drain current_|V = V<br>V = V<br>1200<br>1200<br>R/D<br>R/D|T = 25°C<br>VJ<br>T = °C<br>VJ<br>125|||200<br>10|mA<br>µA| |**VT**<br>_forward voltage drop_|I = A<br>T<br>150<br>I = A<br>300<br>T|T = 25°C<br>VJ|||1.14<br>1.36|V<br>V| ||I = A<br>T<br>150<br>I = A<br>300<br>T|T = °C<br>VJ<br>125|||1.08<br>1.36|V<br>V| |**I**<br>**I**<br>_RMS forward current_<br>**T(RMS)**<br>**TAV**<br>_average forward current_|T = °C<br>C<br>85<br>180° sine|T = °C<br>VJ<br>125|||130<br>300|A<br>A| |**VT0**<br>**rT**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>125|||0.80<br>1.5|V<br>mΩ| |**R**<br>**thJC**<br>_thermal resistance junction to case_|||||0.23|K/W| |**RthCH**<br>_thermal resistance case to heatsink_||||0.100||K/W| |**Ptot**<br>_total power dissipation_||T = 25°C<br>C|||435|W| |**ITSM**<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = 45°C<br>VJ<br>V = 0 V<br>R|||4.75<br>5.13|kA<br>kA| ||t = 10 ms; (50 Hz), sine|T = °C<br>VJ<br>125|||4.04<br>4.36|kA<br>kA| ||<br>t = 8,3 ms; (60 Hz), sine|V = 0 V<br>R||||| |**I²t**<br>_value for fusing_|t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = 45°C<br>V = 0 V<br>VJ<br>R|||112.8<br>109.5|kA²s<br>kA²s| ||t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T = °C<br>125<br>V = 0 V<br>VJ<br>R|||81.6<br>79.1|kA²s<br>kA²s| |**CJ**<br>_junction capacitance_|V = V<br>400<br>f = 1 MHz<br>R|T = 25°C<br>VJ||211||pF| |**PGM**<br>_max. gate power dissipation_<br>**PGAV**<br>_average gate power dissipation_|t = 30 µs<br>P<br>t =<br>P<br>500 µs|T = °C<br>C<br>125|||120<br>60<br>8|W<br>W<br>W| |**(di/dt)cr**<br>_critical rate of rise of current_|repetitive, I =<br>TVJ = 125°C; f = 50 Hz<br>t = µs;<br>I<br>A; V =⅔V<br>500 A<br>T<br>P<br>G =<br>0.5<br>di /dt<br>A/µs;<br>G<br>= 0.5<br>DRM<br>non-repet., I = 160 A<br>T<br>200|repetitive, I =<br>500 A<br>T|||150|A/µs| ||||||500|A/µs| |**(dv/dt)**<br>_critical rate of rise of voltage_<br>**cr**|T<br>= 125°C<br>R =∞; method 1 (linear voltage rise)<br>VJ<br>V =⅔VDRM<br>GK||||1000|V/µs| |**VGT**<br>_gate trigger voltage_<br>**IGT**<br>_gate trigger current_|V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ<br>V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ||||2.5<br>150<br>2.6<br>200|V<br>mA<br>V<br>mA| |**VGD**<br>_gate non-trigger voltage_<br>**IGD**<br>_gate non-trigger current_|T<br>=<br>°C<br>VJ<br>V =⅔V<br>D<br>DRM<br>125||||0.2<br>10|V<br>mA| |_latching current_<br>**IL**|T<br>=<br>°C<br>VJ<br>25<br>t<br>µs<br>p =<br>30<br>I<br>A;<br>=<br>05<br>di /dt<br>A/s<br><br>=<br>05||||300|mA| ||G <br>.<br> <br>µ<br>G<br><br>.|||||| |_holding current_<br>**IH**|T<br>=<br>°C<br>VJ<br>25<br>V = 6 V<br>D<br>R =∞<br>GK||||200|mA| |_gate controlled delay time_<br>**tgd**|T<br>=<br>°C<br>VJ<br>25<br>I<br>A;<br>G =<br>0.5<br>di /dt<br>A/µs<br>G<br>=<br>0.5<br>V = ½ V<br>D<br>DRM||||2|µs| |_turn-off time_<br>**tq**|T<br>=<br>°C<br>VJ<br>di/dt =<br>A/µs<br>10<br>dv/dt =<br>V/µs<br>20<br>V =<br>R<br>100 V; I<br>A;<br>T = 160<br>V =⅔VDRM<br>t<br>µs<br>p = 200<br>100|||150||µs| |||||||| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160408b © 2016 IXYS all rights reserved **MCC132-12io1** |**Symbol**<br>**Definition**<br>**Conditions**|**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**| |---|---|---|---|---|---| |**I RMS**<br>_RMS current_<br>per terminal<br>~~5~~||~~5~~|~~5~~|300|A| |**TVJ**<br>_virtual junction temperature_<br>~~5~~||-40<br>~~5~~|~~5~~|125|°C| |**Top**<br>_operation temperature_||-40||100|°C| |**Tstg**<br>_storage temperature_||-40||125|°C| |**Weight**|||150||g| |**M D**<br>_mounting torque_<br>**M T**<br>_terminal torque_<br>~~|~~||2.25<br>4.5<br>~~|~~|~~|~~|2.75<br>5.5|Nm<br>Nm| |**dSpp/App**<br>_creepage distance on surface | striking distance through air_<br>**dSpb/Apb**<br>_terminal to backside_<br>_terminal to terminal_|14.0<br>16.0<br>~~|~~|10.0<br>16.0<br>~~|~~|~~|~~||mm<br>mm| |**V**<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I≤1 mA<br>ISOL<br>**ISOL**||3600<br>3000|||V<br>V| |Part Number<br>yywwAA<br>Date Code (DC)<br>+<br>Production<br>Index (PI)<br>Lot.No: xxxxxx|Part Number<br>yywwAA<br>Lot.No: xxxxxx<br>Circuit|| |---|---|---| |||| **Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.** ~~ee~~ Standard MCC132-12io1 MCC132-12io1 Box 6 430552 |**Equivalent Circuits for Simulation**|**Equivalent Circuits for Simulation**|**Equivalent Circuits for Simulation**|_* on die level_|T =<br>VJ|125 °C| |---|---|---|---|---|---| |I<br>V0<br>~~R~~0<br>~~Om~~||**Thyristor**|||| |_threshold voltage_<br>**V0 max**|_threshold voltage_|0.8|||V| |**R0 max**<br>_slope resistance *_||0.8|||mΩ| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160408b © 2016 IXYS all rights reserved **MCC132-12io1** |**Outlines**<br>**Y4**|||||| |---|---|---|---|---|---| ||||||| |g<br>C-C (1:1)<br>e<br>nd<br>r<br>j<br>B-B (1:1)<br>b<br>DCB<br>A (3:1)<br>c<br>a<br>M6<br>p<br>f<br>2.8/0.8<br>**A**<br>o<br>Dim.<br>MIN<br>[mm]<br>MAX<br>[mm]<br>MIN<br>[inch]<br>MAX<br>[inch]<br>a<br>30.0<br>30.6<br>1.181<br>1.205<br>b<br>c<br>64.0<br>65.0<br>2.520<br>2.559<br>d<br>6.5<br>7.0<br>0.256<br>0.275<br>e<br>4.9<br>5.1<br>0.193<br>0.201<br>f<br>28.6<br>29.2<br>1.126<br>1.150<br>g<br>7.3<br>7.7<br>0.287<br>0.303<br>h<br>93.5<br>94.5<br>3.681<br>3.720<br>i<br>79.5<br>80.5<br>3.130<br>3.169<br>j<br>4.8<br>5.2<br>0.189<br>0.205<br>k<br>33.4<br>34.0<br>1.315<br>1.339<br>l<br>16.7<br>17.3<br>0.657<br>0.681<br>m<br>22.7<br>23.3<br>0.894<br>0.917<br>n<br>22.7<br>23.3<br>0.894<br>0.917<br>o<br>14.0<br>15.0<br>0.551<br>0.591<br>p<br>q<br>22.8<br>23.3<br>0.898<br>0.917<br>r<br>1.8<br>2.4<br>0.071<br>0.041<br>typ. 0.25<br>typ. 0.010<br>typ. 10.5<br>typ. 0.413<br>k<br>h<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>n<br>m<br>l<br>11<br>10<br>8<br>9<br>q<br>i<br>**C**<br>~~**C**~~<br>**B**<br>**B**|Dim.|MIN<br>[mm]<br>MAX<br>[mm]||MIN<br>[inch]<br>MAX<br>[inch]|| |||300|306|1181|1205| ||a<br>b|.<br>.<br>typ. 0.25||.<br>.<br>typ. 0.010|| ||c|64.0|65.0|2.520|2.559| ||d|6.5|7.0|0.256|0.275| ||e|4.9|5.1|0.193|0.201| ||f|28.6|29.2|1.126|1.150| ||g|7.3|7.7|0.287|0.303| ||h|93.5|94.5|3.681|3.720| ||i|79.5|80.5|3.130|3.169| ||j|4.8|5.2|0.189|0.205| ||k<br>l|33.4<br>167|34.0<br>173|1.315<br>0657|1.339<br>0681| ||m|.<br>22.7|.<br>23.3|.<br>0.894|.<br>0.917| ||n|22.7|23.3|0.894|0.917| ||o|14.0<br>15.0<br>||0.551<br>0.591<br>|| ||p<br>q|22.8<br>23.3<br>typ. 10.5||0.898<br>0.917<br>typ. 0.413|| ||r|1.8|2.4|0.071|0.041| **==> picture [483 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1 2<br>6 7 5 4<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160408b © 2016 IXYS all rights reserved **MCC132-12io1** ## **Thyristor** **==> picture [496 x 659] intentionally omitted <==** **----- Start of picture text -----**<br> 4000 10 [6] 320<br>280 DC<br>180° sin<br>120°<br>3000 50 Hz 240 60°<br>80% VRRM 30°<br>ITSM TTVJVJ = = 125°C45°C I [2] dt ITAVM 200<br>2000 10 [5] 160<br>[A] [A [2] s] TVJ = 45 ° C [A] 120<br>T VJ = 125°C<br>1000 80<br>40<br>0 10 [4] 0<br>0.001 0.01 0.1 1 1 10 0 25 50 75 100 125 150<br>t [s] t [ms] TC [°C]<br>Fig. 1 Surge overload current ITSM, Fig. 2 I [2] t versus time (1-10 ms) Fig. 3 Max. forward current<br>IFSM: Crest value, t: duration at case temperature<br>400 100<br>360 R0.3thKA K/W tp = 30 µs<br>320 0.4 tp = 500 µs<br>0.5 P GM = 120 W<br>280 0.6 60 W<br>Ptot 240 0.81.01.4 VG 10 PGAV = 8 W<br>200 1.8<br>[W] 160 DC180° sin [V]<br>120° 1<br>120 60°<br>80 30° IGT (TVJ = -40°C)<br>IGT (TVJ = 0°C)<br>40 I GT (T VJ = 25°C)<br>0 0.1 IGD<br>0 50 100 150 200 250 0 25 50 75 100 125 150 0.01 0.1 1 10<br>ITAVM [A] Ta [°C] IG [A]<br>Fig. 4 Power dissipation vs. on-state current & ambient temperature Fig. 5 Gate trigger characteristics<br>(per thyristor or diode)<br>100<br>1400 RthKA K/W TVJ = 25°C<br>0.03<br>1200 0.04<br>Circuit 0.06<br>1000 B63xMCC132 or 0.080.1 10<br>Ptot 800 3x MCD132 0.150.2 tgd<br>0.3<br>[W] 600 [μs] limit<br>1<br>400 typ.<br>200<br>0 0.1<br>0 100 200 300 400 500 0 25 50 75 100 125 150 0.01 0.1 1 10<br>IdAVM [A] T a [°C] IG [A]<br>Fig. 6 Three phase rectifier bridge: Power dissipation versus direct Fig. 7 Gate trigger delay time<br>output current and ambient temperature<br>125°C 25°C<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160408b © 2016 IXYS all rights reserved **MCC132-12io1** ## **Thyristor** **==> picture [318 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 1600<br>Circuit RthKA K/W<br>W3 0.03<br>3xMCC132 or 0.04<br>1200 3xMCD132 0.06<br>0.08<br>0.1<br>0.15<br>Ptot 800 0.2<br>0.3<br>[W]<br>400<br>0<br>0 100 200 300 400 0 25 50 75 100 125 150<br>IRMS [A] Ta [°C]<br>Fig. 8 Three phase AC-controller: Power dissipation versus<br>RMS output current and ambient temperature<br>**----- End of picture text -----**<br> **==> picture [323 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 0.4<br>0.3<br>ZthJC<br>0.2 30°<br>60°<br>[K/W] 120°<br>180°<br>0.1 DC<br>0.0<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]<br>t [s]<br>Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)<br>**----- End of picture text -----**<br> RthJC for various conduction angles d: d RthJC [K/W] DC 0.230 180° 0.244 120° 0.255 60° 0.283 30° 0.321 Constants for ZthJC calculation: i Rthi [K/W] ti [s] 1 0.0095 0.001 2 0.0175 0.065 3 0.2030 0.400 **==> picture [502 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5<br>RthJK for various conduction angles d:<br>0.4 d RthJK [K/W]<br> DC 0.330<br>180° 0.344<br>120° 0.355<br>0.3<br>60° 0.383<br>30° 0.421<br>ZthJK 30°<br>[K/W] 0.2 120180°60°° Constants for Zi Rthi [K/W]thJK calculation: ti [s]<br>0.1 DC 1 0.0095 0.001<br>2 0.0175 0.065<br>3 0.2030 0.400<br>0.0 4 0.1000 1.290<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2] 10 [3]<br>t [s]<br>Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160408b © 2016 IXYS all rights reserved
Updated at February 9, 2023
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