MCACD033N06Q-TP

## **Features** 

## AEC-Q101 Qualified Trench Power LV MOSFET Technology Excellent Package For Heat Dissipation 

(Note2) 

RoHS Compliant. See Ordering Information) 

## **Maximum Ratings** 

- Operating Junction Temperature Range : -55°C to +175°C 

- Storage Temperature Range: -55°C to +175°C 

- • 3 • Thermal Resistance: 2.4°C/W Junction to Case Thermal Resistance: 60°C/W Junction to Ambient\\>te ) 

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60<br>Tc=25°C 2 2<br>To=100°C 15<br>（ 4 ） 8<br>62<br>"™™ 3<br>**----- End of picture text -----**<br>


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1. Halogen free "Green” products are defined as those which contain <900ppm bromine<br>**----- End of picture text -----**<br>


2.High Temperature Solder Exemption Applied, see EU Directive Annex 7a. 3. The value of Rey, is measured with the device mounted on 1in? FR-4 board with 2oz. 

4 . Repetitive rating; pulse width limited by max. 5 . Pp is based on max. junction temperature, 6 .Ty=25°C, Voo=30V, VGS=10V,R o=250,L= 0.5 

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e<br>1<br>A A1<br>at.<br>A2 T O TT<br>DIMENSIONS<br>INCHES MM<br>DIM NOTE<br>MIN MAX  r MIN MAX<br>D ee 0.203 0.218 ee 5.15 ee eee 5.55<br>D2 0.197 0.213 5.00 5.40<br>eea e se e e eeeee<br>a E2E Da 0.2340.223 0.2500.238 es 5.955.66 ee 6.356.06<br>ee A 0.039 ee 0.047 ee 1.00 ee 1.20 ee ee<br>a A1 0.010 ee 0.254 ee BSC ee<br>a A2 0.000 es 0.004 ee 0.00 0.10 ee<br>D1 0.059 0.075 1.50 1.90<br>a E1 0.139 0.154 ee 3.52 3.92 ee<br>a ee ee ee ee eee<br>ee L1 a 0.022 0.030 ee 0.56 ee 0.76 ee<br>ee L2 0.019 ee 0.50 ee BSC ee<br>a b 0.012 0.020 0.31 0.51<br>Po e 0.050 1.27 BSC<br>**----- End of picture text -----**<br>


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D1 D1 D2 D2<br>8 7 6 5<br>MCC<br>D033N06Q 4 codes in total<br>YYWW YY is the year<br>WW is the week<br>1 2 3 ; 4<br>S1 G1 S2 G2<br>**----- End of picture text -----**<br>


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**Fig.1 - Typical Output Characteristics** 

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60<br>VGS=10V,8V,6V,5V,4.5V,4V,3.5V,3V,2.5V<br>50<br>40<br>30<br>20<br>10<br>0<br>0 1 2 3 4 5<br>Drain To Source Voltage (V)<br>Fig.3 - RDS(ON) - VGS<br>60<br>ID=20A<br>50<br>40<br>30<br>20 Tj=25℃<br>10<br>0<br>4 5 6 7 8 9 10<br>Gate To Source Voltage (V)<br>Drain Current (A)<br>Drain-Source On-Resistance (mΩ)<br>**----- End of picture text -----**<br>


## **Fig. 5 - Capacitance Characteristics** 

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10000<br>Ciss<br>1000<br>Coss<br>100<br>10 C rss<br>1<br>0 10 20 30 40 50 60<br>Drain to Source Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


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Fig.2 - Transfer Characteristics<br>60<br>VDS=5V<br>50<br>25℃<br>40 175℃<br>30<br>20<br>10<br>0<br>0 2 4 6 8 10<br>Gate To Source Voltage (V)<br>Fig.4 - RDS(ON) - ID<br>120<br>100<br>80<br>60<br>VGS=4.5V<br>40<br>VGS=10V<br>20<br>0<br>0 10 20 30 40<br>Drain Current (A)<br>Drain Current (A)<br>Drain-Source On-Resistance (mΩ)<br>**----- End of picture text -----**<br>


**Fig.6 - Gate Charge** 

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10<br>VDS=30V<br>9 ID=10A<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 4 8 12 16 20<br>Gate Charge (nC)<br>Gate-Source Voltage (V)<br>**----- End of picture text -----**<br>


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**Fig.7 - Normalized Threshold Voltage** 

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1.4<br>1.2<br>1.0<br>0.8<br>ID=250µA<br>0.6<br>0.4<br>0.2<br>0.0<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature(℃)<br>VGS(th) - Threshold Voltage Normalized<br>**----- End of picture text -----**<br>


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Fig.9 - IS - VSD<br>100<br>VGS=0V<br>175℃ 25℃<br>10<br>1<br>0.4 0.6 0.8 1.0 1.2<br>Source To Drain Voltage (V)<br>Source Current (A)<br>**----- End of picture text -----**<br>


**Fig.8 - Normalized On Resistance Characteristics** 

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3.0<br>VGS=10V<br>ID=20A<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Junction Temperature(℃)<br>Normalized On Resistance<br>**----- End of picture text -----**<br>


**Fig.10 - Drain Current** 

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25<br>20<br>15<br>10<br>5<br>0<br>0 25 50 75 100 125 150 175<br>TC Temperature (℃)<br>Drain Current(A)<br>**----- End of picture text -----**<br>


**Fig.11 - PD Dissipation** 

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70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150 175<br>TC Temperature (℃)<br>Power Dissipation (W)<br>**----- End of picture text -----**<br>


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Fig.12 - Safe Operation Area<br>100<br>1µS<br>RDS(on) Limited<br>10µS<br>10<br>DC<br>100µS<br>T =175°C<br>J(max) 300µS<br>TC=25°C<br>Single Pulse 1mS<br>1<br>0.1 1 10 100<br>Drain-Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig.13 - Normalized Transient Thermal Impedance** 

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10<br>D=Ton/T<br>TJ,PK=TC+PdmꞏZθjCꞏRθjC In descending order<br>RθjC=2.4°C/W ee D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse<br>1 A<br>Single Pulse<br>Saati imine ae e e<br>0.1 err LIN PIN |<br>PDM<br>Leger tt TT TTT TT |<br>0.01 eTa TT TT TT ee ft TON T |<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>Pulse Width(s)<br>Thermal Resistance<br>Zth(J-C) Normalized Transient<br>**----- End of picture text -----**<br>


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**Device Packing** 

## *****IMPORTANT NOTICE***** 

## *****LIFE SUPPORT***** 

## *****CUSTOMER AWARENESS***** 

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