MC7252KV-TP

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<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.<br>2. The value of R θ JA is measured with the device mounted on the minimum recommend<br>pad3. Ppsize,is basedin theonstillmax.air environmentjunction temperature,withTA =25_.using ℃ junction-ambient thermal resistance.<br>**----- End of picture text -----**<br>


N-Channel MOSFET Electrical Characteristics @ 25°C (Unless Otherwise Specified) 

||||||||
|---|---|---|---|---|---|---|
|Static Characteristics<br>~~DraSouceBskiownVago|Vans|YarOWe250~~|||||||
|~~DraSouceBskiownVago|~~<br>~~Gate-Soucoteatage Curent~~<br>~~ZeroGateVotage~~|~~|Vans|~~<br>~~e~~~~**s**s~~<br>|~~|YarOWe2508~~<br>~~**V**ntOVMen=w@tV~~|~~8~~|~~8~~|~~8~~|~~8~~<br>~~TO~~|
|~~Dra SouceBskiown Vago |~~<br>~~Gate-Soucoteatage Curent~~<br>~~ZeroGateVotageDanCurent~~|~~| Vans |~~<br>~~e~~~~**s**s~~<br>~~be~~|~~| YarOW e2508~~<br>~~**V**ntOVMen=w@tV~~<br>~~ar.~~|~~8~~|~~8~~|~~8~~|~~8~~<br>~~TO~~|
|~~Gate-Soucoteatage Curent~~<br>~~ZeroGateVotageDanCurent~~|~~e~~~~**s**s~~<br>~~be~~|~~8~~<br>~~**V**ntOVMen=w@tV~~<br>~~ar.~~|~~8~~|~~8~~|~~8~~|~~8~~<br>~~TO~~|
|~~Curent ~~<br>~~ZeroGateVotage Dan Curent ~~<br>~~ibe~~|~~e~~~~**s**s ~~<br> ~~b e~~<br>~~ibe~~|~~**V**ntOVMen=w@tV~~<br>~~ar.~~<br>~~Ves=4.5V,Ip=0.2A~~||~~1.8~~|~~3.0~~|~~TO~~|
|Drain-Source On-Resistance<br>~~ibe~~|Rpsvon)<br>~~ibe~~|Ves=10V, Ip=0.2A<br>:<br>~~Ves=4.5V,Ip=0.2A~~<br>~~ee~~|~~ee~~|1.5<br>~~1.8~~<br>~~ee~~|2.5<br>~~3.0~~<br>~~ee~~|9)<br>~~Q~~|
|||:<br>~~Ves=4.5V,Ip=0.2A~~<br>~~ee~~|~~ee~~|~~1.8~~<br>~~ee~~|~~3.0~~<br>~~ee~~||
|~~ibe~~|~~ibe~~|~~Ves=4.5V,Ip=0.2A~~<br>~~ee~~|~~ee~~|~~1.8~~<br>~~ee~~|~~3.0~~<br>~~ee~~|~~Q~~|
|~~Ves=4.5V, Ip=0.2A~~<br>~~1.8~~<br>~~3.0~~<br>~~ibe~~<br>~~ee Q~~<br>Diode Characteristics|||||||
||||||||
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|||I-=0.3A, dl-/dt=100A/us|||||
||||||||
|Dynamic Characteristics|||||||
|Input Capacitance|Ciss|||16.2|||
||||||||
||||||||
||0,|Vps=30V,Ves=10V,Ip=0.3A||||nc|
|Gate-Source Charge|Qgs|||0.07|||
|Gate-Drain Charge|Qga|||0.1|||
|Turn-On||Vpp=30V, Ves=10V,<br>Rg=300, Ip=0.3A|~~——~~<br>~~|~~|~~——~~|~~——~~|ns|
|Turn-On<br>Rise Time|t,||~~——~~<br>~~|~~|~~——~~<br>3|~~——~~||
|Turn-On|||~~——~~|~~——~~|~~——~~||
||||~~we~~|~~we~~|~~we~~||



P-Channel Electrical Characteristics @ 25°C (Unless Otherwise Specified) 

||||||||
|---|---|---|---|---|---|---|
|Static Characteristics<br>~~Drar-SoucerakdouVolage|Vawons[VesOva~~|||||||
|~~Drar-SoucerakdouVolage|~~<br>~~Gate-Souce~~<br>~~LeakageGent~~<br>~~Zero~~|~~|Vawons~~<br>~~ls~~<br>|~~[VesOva8~~<br>~~**Vo**-OW~~~~**V**esst@0V~~|~~8~~|~~8~~|~~8~~|~~8~~<br>~~OO~~|
|~~Drar-Souce rakdou Volage |~~<br>~~Gate-Souce~~<br>~~LeakageGent~~<br>~~ZeroGateVogeOaCurent~~|~~|Vawons ~~<br>~~ls~~<br>~~ss~~|~~[VesOva8~~<br>~~**Vo**-OW~~~~**V**esst@0V~~<br>~~s6O~~|~~8~~<br>|~~8~~<br>|~~8~~<br>|~~8~~<br>~~OO~~<br>|
|~~Gate-Souce~~<br>~~LeakageGent~~<br>~~ZeroGateVogeOaCurent~~|~~ls~~<br>~~ss~~|~~8~~<br>~~**Vo**-OW~~~~**V**esst@0V~~<br>~~s6OVert~~|~~8~~<br>~~Vert~~|~~8~~<br>~~Vert~~|~~8~~<br>~~Vert~~|~~8~~<br>~~OO~~<br>~~Vert~~|
|~~Leakage Gent ~~<br>~~Zero GateVoge Oa Curent ~~<br>~~Drain-Source~~|~~ls ~~<br> ~~ss~~<br>~~ee~~|~~**Vo**-OW~~~~**V**esst@0V~~<br>~~s6OVert~~<br>~~game~~|~~Vert~~<br>~~game~~|~~Vert~~<br>~~game~~|~~Vert~~<br>~~game~~|~~OO~~<br>~~Vert~~|
|~~eansortning~~<br>~~Drain-Source~~<br>On-Resistance<br>~~GateRessione~~<br>~~Re~~|~~eansortning~~<br>~~ee~~<br>Rpsvon)<br>~~Re~~|~~eansortning~~<br>~~game~~<br>:|~~eansortning~~<br>~~game~~|~~eansortning~~<br>~~game~~|~~eansortning~~<br>~~game~~|9)|
|||~~eansortning~~<br>~~game~~<br>:<br>~~Ves=-4.5V,Ip=-0.2A~~<br>~~tMOpendran~~|~~eansortning~~<br>~~game~~|~~eansortning~~<br>~~game~~<br>~~3.2~~|~~eansortning~~<br>~~game~~<br>~~4.0~~||
|~~eansortning~~<br>~~Drain-Source~~<br>~~GateRessione~~<br>~~Re~~|~~eansortning~~<br>~~ee ~~<br>~~Re~~|~~eansortning~~<br> ~~game~~<br>~~Ves=-4.5V,Ip=-0.2A~~<br>~~tMOpendran~~|~~eansortning~~<br>~~game~~|~~eansortning~~<br>~~game~~<br>~~3.2~~|~~eansortning~~<br>~~game~~<br>~~4.0~~||
|~~Ves=-4.5V, Ip=-0.2A~~<br>~~3.2~~<br>~~4.0~~<br>~~GateRessione~~<br>~~Re tM Opendran~~<br>Diode Characteristics<br>~~ContinousSouyDedewenteB~~|||||||
|~~ContinousSouyDedewenteB~~<br>~~DiodeForwardVottage~~<br>~~Van~~|~~eB~~<br>~~Van~~|~~eB~~<br>~~MesOW~~|~~eB~~<br>|~~eB~~<br>|~~eB~~<br>|~~eB~~<br>|
|~~Continous SouyDede wenteB~~<br>~~DiodeForwardVottage~~<br>~~Van~~|~~eB~~<br>~~Van~~|~~eB~~<br>~~MesOWNOR~~|~~eB~~<br>~~NOR~~|~~eB~~<br>~~NOR~~|~~eB~~<br>~~NOR~~|~~eB~~<br>~~NOR~~|
|~~Diode Forward Vottage~~<br>~~Van~~|~~Van ~~|~~MesOWNOR~~<br>I-=-0.5A, dl-/dt=100A/us|~~NOR~~|~~NOR~~|~~NOR~~|~~NOR~~|
|Reverse Recovery Charge|Qr|||9||nC|
|Dynamic Characteristics|||||||
|Input Capacitance|Ciss|||25.2|||
||||||||
||||||||
||0,|| Vos=-30V,Ves=-10V,Ip=-0.5A||||nc|
|Gate-Source Charge|Qgs<br>|||~~|~~|0.08|||
|Gate-Drain Charge|Qga||~~|~~|0.23|||
|||Rg=30Q, Ip=-0.5A|~~a~~|~~a~~|~~a~~|ns|
||||||||
||||||||
|Turn-Off Fall Time|ty|||22|||



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e e e e<br>MCCMicro Commercial Components ez2Kv<br>**----- End of picture text -----**<br>


N-Channel Curve Characteristics 

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Fig. 1 - Typical Output Characteristics Fig. 2 - Transfer Characteristics<br>0.8 0.8<br>eA . aa 150°C<br>ll Fp Ye<br>2. sh Wer| WW,Sai 7 /<br>= | | || 2-1/1]tif“ i ll<br>7)5  4G Wh = eee) eee<br>: 0.4 A }__} __|__ 5 04 Y<br>ee)a  2+1 stilttis/ | ft<br>02 HA 24aOG ree 0.2 GO 9a r,<br>ee Pitt lA<br>wi yoo| | |ttae ow |LLY]SA<br>0 1 2 3 4 5 0 1 2 | 3 Tt 4 5<br>Drain To Source Voltage (V) Gate To Source Voltage (V)<br>Fig.3-Ro son Ves Fig.4-Rosony<br>20 ee ee 5 Pot tT EE<br>se.o | | | | | ft | ff aso he<br>74 no<br>EERE ere<br>a 12 | Q3<br>et {| | |} | | | | ff ef [| | | | vont<br>° so. | | | | =<br>5ea 1 | | | | | ft tt Sga, | |<br>eee ee ee ee<br>s, || ti | | [| ft | s| | [| | | fem | |<br>et | | Repel | tt | oe eeee<br>0 | | tt Ty Pf 3 | | ft | ft | ff<br>0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8<br>Gate To Source Voltage (V) Drain Current (A)<br>Fig. 5 - Capacitance Characteristics Fig. 6 - Gate Charge<br>eS A A A OS CO OO CO CO V_.=10V<br>|anne 1_=0.3A= | | | | | A 4]<br>a a ee ee ee eee 3 A<br>¢ SE Oe<br>Soe oWLLELEEELEET|SSS| | ff te. fT tT gi8 | | r) FZ | |<br>SoM]| | | |} | | | | s°| | 7tert| | |<br>Se sioo7<br>oO A HD re | Y 4 | | | |<br>RES SSSSS SSS SO<br>SSS oe<br>LEETTTrss YET TT | yy<br>10 20 30 40 50 60 0)<br>0 I yS TI ee<br>Drain To Source Voltage (V) 0.0 0.2 0.4 0.6 0.8<br>Gate Charge(nC)<br>**----- End of picture text -----**<br>


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N-Channel Curve Characteristics 

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Fig. 7 - Normalized Threshold Voltage Fig. 8 - Normalized On Resistance Characteristics<br>no}N 1214 a 1,=0.2A<br>><br>0 FS04 CPPPELLL) jE f.aSE<br>PNT-50 -25 ET 0 TTT 25 50 75 TT 100 125 150 -50 -25 0 25 50 75 100 125 150<br>Tj-Junction Temperature (°C) Tj-Junction Temperature (°C)<br>Fig.9-l,-V., Fig. 10 - Drain Current<br>Pv,.=0v— FF ee es<br>——— a<br>< SSeS SS<br>| | | | | Vif | [ Z 020 —<br>——__-—_ § sof 1fT<br>BESS Nr<br>P| | Jf] jf | tt 0.05 SS<br>7 ] ee ee ee eee<br>ELL “0. 2 0.4 0.6 LE 0.8 1.0 LL 1.2 a 0 25 a 50 7 100 125 150<br>Source To Drain Voltage (V) T, Temperature (°C)<br>**----- End of picture text -----**<br>


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Fig.9-l,-V.,<br>Pv,.=0v— FF<br>———<br>< SSeS<br>| | | | | Vif | [<br>——__-—_<br>BESS<br>P| | Jf] jf | tt<br>7 ]<br>ELL “0. 2 0.4 0.6 LE 0.8 1.0 LL 1.2<br>Source To Drain Voltage (V)<br>Fig. 11 - PD Dissipation<br>> —NI| | |]<br>3 IN<br>PL tf | TNT<br>0 25 50 75 100 125 150<br>T, Temperature (°C)<br>**----- End of picture text -----**<br>


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N-Channel Curve Characteristics 

Fig. 12 - Safe Operation Area 

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10 -——————<br>A<br>aa OO<br>(Er<br>e |] RNEEEEEH<br>—BTR a a aLimite TESSNN ee TPr<br>£ bat SON SAS NG<br>8 os er ASSN TEA SSS<br>ra© vo LeoeAea eeeCCTee llOSS ENR OSSSSTNTims]tbe |<br>FT Hman) age 150°Catt<br>reg oemMePusel FTLTT EE TTTETT<br>0.1 1 10 100<br>Drain-Source Voltage (V)<br>Fig. 13 - Normalized Transient Thermal Impedance<br>10  Se ee ee Se ee me os ee ee ee eS le be ee<br>n<br>3em 7Le pouaeeerom| pee  EttPP}CeInFiet<br>E§&© Oo Wf} ftgtft<br>aS aSS ee ee<br>3 ——<br>2 a<br>Eso€ SSeatin Singleor ote Pulsetryt-—Pulset iti Cerne the ttete et<br>Z25 SST ail<br>aan a es Oe sll<br>> ee ee a a EH<br>xos aSa A t T.on PeCoo<br>N a a a ee t mal<br>ye3 -LLUII LEETETPIE<br>1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000<br>Pulse Width (s)<br>**----- End of picture text -----**<br>


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°M-C°C- e M e e e M0725 2KV<br>Micro Commercial Components<br>**----- End of picture text -----**<br>


P-Channel Curve Characteristics 

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**----- Start of picture text -----**<br>
Fig. 1 - Typical Output Characteristics Fig. 2 - Transfer Characteristics<br>-0.8 -0.8<br>potted oeea — er-  TTT LAia<br>a Ze| | A ottt] | LL A<br>en, PEt feet<br>5oO Y Ze ee V=-3V )oO ee<br>-0.4 VjOi —l 5 -0.4 7<br>2 |YH eZ<br>se 2<br>-0.2 Vji -0.2<br>Lo<br>Y Z| Vy<br>0.0 AGE EEE | |LAT a<br>0 4 2 3 4 5 0.0 7 7! 3 4 5<br>Drain To Source Voltage (V) Gate To Source Voltage (V)<br>**----- End of picture text -----**<br>


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Fig.3-Ry cones Fig.4-Rosony!p<br>10 TT ET TT 8 Pt | ft | ft et<br>ef FOIE EEE sP  rrr<br>g o<br>ee ee |<br>e. | | it] | | | tt : |<br>ee wn -<br>6 5-4 = L<br>2<br>oe 2 | =<br>ee<br>se, | | | | beef [77 4 f<br>a  Oe<br>a<br>0 -2 4 6 8 -10 )<br>Gate To Source Voltage (V) 0.0 0.2 0.4 0.6 08<br>Drain Current (A)<br>Fig. 5 - Capacitance Characteristics Fig. 6 - Gate Charge<br>Po Ds<br>a | =-0.5A A<br>Nn a ko 8 LL |<br>Nf ff i ++} SiTT TT TTT ELT<br>ge eee cae<br>£ EEE SCL2 ae Z|<br>PALL EEL<br>o.@ ENSSSS sa— gst ti [Leet] 7 ey tl<br>1S) ess[Rf OEE Ee EE QB} -4 | | LALA<br>pNe ff fp % rt |<br>oaP| tt | PP SS © 2 HELE ETT EEE ETEETT<br>; FL ET LTTE TLE Ltt tt<br>) -10 -20 -30 -40 -50 -60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>Drain To Source Voltage (V) Gate Charge(nC)<br>**----- End of picture text -----**<br>


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~~mez 52Kv~~ 

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MCC °fVf- e e<br>Micro Commercial Components<br>**----- End of picture text -----**<br>


P-Channel Curve Characteristics 

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Fig. 7 - Normalized Threshold Voltage Fig. 8 - Normalized On Resistance Characteristics<br>1.4 25<br>3 |,=-0.2A<br>oO “|<br>ae Z<br>2 ee 0.8 EE _| 8 ee 1.5 ee7 — ee<br>3[o) (e) TF<br>|<br>1 0. 5<br>ke 0.4 E a —<br>é 2,7 | | | | UT<br>0.0 0.0<br>ae | tf tT | | ft Tl<br>-50 -25 0 25 50 75 100 125 150 -50 -25 ) 25 50 75 100 125 150<br>Tj-Junction Temperature (°C) Tj-Junction Temperature (°C)<br>Fig.9-,-V.,, Fig. 10 - Drain Current<br>: ——— i<br>—————— Gs a A A<br>a==a AA | a a<br>¢ _++1++A7A4Atttaeeee)oe) A  aee -0.16 aa<br>5 / ¢,/© 0.12 7 7RTT<br>5 A 3 IN<br>a ee<br>oO a ee ee | a A es ee | £<br>oO A OY A CO oO<br>5 YA A 5 0.08 N<br>SSS<br>SS SS e e eeeee<br>FF<br>tA Att i<br>o t 1 VI VI I | | oor. [| [| [ | VN<br>-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 0 25 50 i 100 125 150<br>Source To Drain Voltage (V) T, Temperature (°C)<br>Fig. 11 - PD Dissipation<br>es | [IN]<br>2% 02 ~<br>ee ee<br>g NS<br>rt | | |N |<br>0 25 50 75 100 125 150<br>T, Temperature (°C)<br>**----- End of picture text -----**<br>


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Micro Commercial Components<br>**----- End of picture text -----**<br>


P-Channel Curve Characteristics 

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Fig. 12 - Safe Operation Area<br>-10 _—[—— ES ee |<br>————ee<br>reee<br>a OO<br>(Ea<br>2o AESTPot eefT<br>B oi Renin SEN TTA SSS<br>fa}© aa a lOek GGasa<=S eS I H<br>oon PATL TL L SSS 1omsSS |<br>TA=25°C ee<br>ea SolePuse| TTT TE TTT tT TTT<br>-0.1 -1 -10 -100<br>Drain-Source Voltage (V)<br>**----- End of picture text -----**<br>


Fig. 13 - Normalized Transient Thermal Impedance 

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10 —<br>5 ee ROS et eH D=0.5, 0.3,0.2, 0.1, 0.05, 0.02, 0.01, single pulseHt}<br>ee ae irc<br>© FREE EE ES<br>E I ES rr ee ee<br>8 at SS a 2<br>B er<br>Oo€ a Single Pulsetryt-— Cert tte ete ti<br>Z5 STOTT ail<br>aan gee sll<br>> ee ee a a EH<br>s a Tol Ton Coot<br>N PT TT t mal<br>ye3 -LLUII LEETETPIE<br>1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000<br>Pulse Width (s)<br>**----- End of picture text -----**<br>


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## _**Micro Commercial Components Corp**_ 

## _**Micro Commercial Components**_ 

## _**Corp**_ 

## _**Micro Commercial Components Corp**_