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MBT3946DW1T2G

Bipolar Transistor Array, Complementary NPN and PNP, 40 V, 200 mA, 150 mW, 100 hFE, SC-88

  • Manufacturer: ONSEMI
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 6Pins
  • DC Current Gain hFE: 100hFE
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Complementary NPN and PNP
  • DC Collector Current: 200mA
  • Power Dissipation Pd: 150mW
  • Power Dissipation NPN: 150mW
  • Power Dissipation PNP: 150mW
  • Transistor Case Style: SC-88
  • Transition Frequency NPN: 300MHz
  • Transition Frequency PNP: 250MHz
  • Operating Temperature Max: 150°C
  • DC Current Gain hFE Min NPN: 100hFE
  • DC Current Gain hFE Min PNP: 100hFE
  • Continuous Collector Current NPN: 200mA
  • Continuous Collector Current PNP: 200mA
  • Collector Emitter Voltage Max NPN: 40V
  • Collector Emitter Voltage Max PNP: 40V
  • Collector Emitter Voltage V(br)ceo: 40V
Delivery and price
Units per pack 500
Price 0.046 €
Current stock 11881
Lead time 7 days
PDF File icon Datasheet