MBRS4201T3G
Schottky Rectifier, 200 V, 4 A, Single, DO-214AB (SMC), 2 Pins, 860 mV
- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):4A; Diode Configuration:Single; Diode Case Style:DO-214AB; No. of Pins:2Pins; Forward Voltage VF Max:860mV; Forward Surge Current Ifsm Max
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: MBRS4
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: DO-214AB (SMC)
- Diode Configuration: Single
- Forward Voltage Max: 860mV
- Forward Surge Current: 100A
- Average Forward Current: 4A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.507 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## MBRS4201T3G, NRVBS4201T3G 200 V, 4A Schottky ## Fast Soft-Recovery Power Rectifier ## **SMC Power Surface Mount Package** ## **Features** - Lower Forward Voltage than any Ultrafast Rectifier: VF < 0.61 V at 150°C **www.onsemi.com** **SCHOTTKY RECTIFIER 4 AMPS, 200 VOLTS** - Fast Switching Speed: Reverse Recovery Time (tRR) < 35 ns - Soft Recovery Characteristics: Softness Factor (tb/ta) ≥ 1 - Highly Stable Over Temperature - AEC−Q101 Qualified and PPAP Capable - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* **SMC 2−LEAD CASE 403AC** - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Benefits** ## **MARKING DIAGRAM** - Significantly Reduced EMI - Eliminates the Need of Snubber Circuits - Low Switching and Heat Losses **==> picture [26 x 16] intentionally omitted <==** **----- Start of picture text -----**<br> AYWW<br>B421<br>**----- End of picture text -----**<br> - Improved Thermal Management ## **Applications** - Engine and Convenience Control Systems - Motor Controls - Battery Chargers and Switching Power Supplies ## **Mechanical Characteristics** - Small Compact Surface Mount Package with J–Bend Leads - Rectangular Package for Automated Handling - Weight: 217 mg (Approximately) |B421|= Specific Device Code| |---|---| |A|= Assembly Location**| |Y|= Year| |WW|= Work Week| ||= Pb−Free Package| (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds - ESD Ratings: - ♦ Machine Model = A - ♦ Human Body Model = 1C - Polarity: Notch in Plastic Body Indicates Cathode Lead ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MBRS4201T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel| |NRVBS4201T3G*|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **MBRS4201T3/D** **1** © Semiconductor Components Industries, LLC, 2011 **May, 2017 − Rev. 6** **MBRS4201T3G, NRVBS4201T3G** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|200|V| |Average Rectified Forward Current<br>(Rated VR, TL= 70°C)|IF(AV)|4|A| |Nonrepetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|100|A| |Operating Junction Temperature|TJ|−55 to +150|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Thermal Resistance, Junction−to−Lead|R�JL|11|°C/W| ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage<br>(IF= 4 A, TJ= 25°C)<br>(IF= 4 A, TJ= 150°C)|VF|0.86<br>0.61|V| |Maximum Instantaneous Reverse Current (Rated VR)<br>(Rated DC Voltage, TJ= 25°C)<br>(Rated DC Voltage, TJ= 150°C)|IR|1.0<br>5.0|mA<br>mA| |Maximum Reverse Recovery Time<br>(IF= 1.0 A, di/dt = 100 A/�s, VR= 30 V)|trr|35|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **MBRS4201T3G, NRVBS4201T3G** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [492 x 381] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>10 10<br>150 ° C<br>150 ° C<br>25 ° C<br>1 100 ° C 1 100 ° C 25 ° C<br>0.1 0.1<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2<br>VF, INSTANTANEOUS VOLTAGE (V) VF, INSTANTANEOUS VOLTAGE (V)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>1E−1 1.0E−01<br>1E−2<br>1E−3 150 ° C 1.0E−02<br>TC = 150 ° C<br>1E−4<br>100 ° C 1.0E−03<br>1E−5 T C = 25 ° C<br>1.0E−04<br>1E−6<br>1E−7<br>1.0E−05<br>25 ° C<br>1E−8<br>1E−9 1.0E−06<br>0 20 40 60 80 100 120 140 160 180 200<br>0 20 40 60 80 100 120 140 160 180200<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>, FORWARD CURRENT (A)IF , FORWARD CURRENT (A)IF<br>, REVERSE CURRENT (A)<br>IR<br>, MAXIMUM REVERSE CURRENT (A)<br>IR<br>**----- End of picture text -----**<br> **Figure 3. Typical Reverse Current** **Figure 4. Maximum Reverse Current** **==> picture [245 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0 20 40 60 80 100 120 140 160 180 200<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 5. Typical Capacitance** **www.onsemi.com** **3** **MBRS4201T3G, NRVBS4201T3G** **==> picture [489 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 7 5.0<br>4.5<br>6<br>4.0<br>5 3.5<br>DC<br>3.0<br>4<br>SQUAREWAVE 2.5<br>3 SQUAREWAVE<br>2.0 DC<br>2 1.5<br>1.0<br>1<br>0.5<br>0 0<br>0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6<br>TL, LEAD TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT<br>Figure 6. Derating Curve Figure 7. Power Dissipation<br>, AVERAGE POWER DISSIPATION (W)<br>, AVERAGE FORWARD CURRENT (A)<br>IF FO<br>P<br>**----- End of picture text -----**<br> **==> picture [369 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>ON Semiconductor MBRS4201<br>2.0<br>eliminates reverse recovery<br>1.5 200 V Ultrafast oscillations present in Ultrafast<br>1.0 MBRS4201 devices in the market, particularly at<br>hot temperatures.<br>0.5<br>0 *Test Conditions:<br>IF = 1 A, dI/dT = 100 A/ � s,<br>−0.5 VR = 30 V<br>−1.0<br>−1.5<br>−2.0<br>−2.5<br>T, TIME (10 ns/div)<br>I, CURRENT (A)<br>**----- End of picture text -----**<br> **Figure 8. Reverse Recovery Time* (tRR) at 125** � **C** **www.onsemi.com** **4** **MBRS4201T3G, NRVBS4201T3G** ## **PACKAGE DIMENSIONS** **SMC 2−LEAD** CASE 403AC ISSUE A **==> picture [462 x 345] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>HE 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: INCHES.<br>E 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD<br>FLASH SHALL NOT EXCEED 0.254mm PER SIDE.<br>4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H.<br>5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA<br>=e<br>In / DETERMINED BY DIMENSION L.<br>MILLIMETERS INCHES<br>D DIM MIN MAX MIN MAX<br>A 1.95 2.61 0.077 0.103<br>A1 c A1 0.05 0.20 0.002 0.008<br>P A T 2D DETAIL A eee A2 1.90 2.41 0.075 0.095<br>b 2.90 3.20 0.114 0.126<br>TOP VIEW c 0.15 0.41 0.060 0.016<br>D 5.55 6.25 0.219 0.246<br>DETAIL A E 6.60 7.15 0.260 0.281<br>H E 7.75 8.15 0.305 0.321<br>A2 A L 0.75 1.60 0.030 0.063<br>(5 7 7 ——<br>L non Te —_y b t - | —} —<br>SIDE VIEW END VIEW<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>8.750<br>0.344<br>as<br>3.790<br>2X<br>0.149<br>yo<br>2X 2.250 mm SCALE 4:1<br>a 0.089 inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br> ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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Updated at June 4, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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