MBRS410LT3G

## MBRS410L, NRVBS410L Surface Mount Schottky Power Rectifier 

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical. 

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**SCHOTTKY BARRIER RECTIFIERS 4.0 AMPERES, 10 VOLTS** 

## **Features** 

- Ultra Low VF 

- 1st in the Market Place with a 10 VR Schottky Rectifier 

- Small Compact Surface Mountable Package with J−Bend Leads 

- Rectangular Package for Automated Handling 

- Highly Stable Oxide Passivated Junction 

**SMC  2−LEAD CASE 403AC** 

- Very Low Forward Voltage Drop 

- Excellent Ability to Withstand Reverse Avalanche Energy Transients 

- Guard−Ring for Stress Protection 

- NRVBS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded 

- Weight: 217 mg (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

## **MARKING DIAGRAM** 

||AYWW<br>B4L1||
|---|---|---|
||||
||||
|B4L1<br>A<br>Y|= Specific Device Code<br>= Assembly Location**<br>= Year||
|WW|= Work Week<br>= Pb−Free Package||
|(Note: Microdot may be in either location)|||



- **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. 

## **ORDERING INFORMATION** 

- Polarity: Notch in Plastic Body Indicates Cathode Lead 

- ESD Ratings: Machine Model = C 

Human Body Model = 3B 

**MAXIMUM RATINGS** 

|**Rating**<br>~~tHe~~|**Symbol**<br>~~tHe~~|**Value**<br>~~tHe~~|**Unit**<br>~~tHe~~|
|---|---|---|---|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage<br>~~tHe~~|VRRM<br>VRWM<br>VR<br>~~tHe~~|10<br>~~tHe~~|V<br>~~tHe~~|
|Average Rectified Forward Current<br>(@ TL= 110°C)<br>~~tHe~~|IO<br>~~tHe~~|4.0<br>~~tHe~~|A<br>~~tHe~~|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions<br>Halfwave, Single Phase, 60 Hz)<br>~~tHe~~|IFSM<br>~~tHe~~|150<br>~~tHe~~|A<br>~~tHe~~|
|Operating Junction Temperature<br>~~tHe~~|TJ<br>~~tHe~~|−65 to +125<br>~~tHe~~|°C<br>~~tHe~~|



|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MBRS410LT3G|SMC<br>(Pb−Free)|2500 / Tape & Reel|
|NRVBS410LT3G*|SMC<br>(Pb−Free)|2500 / Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **MBRS410LT3/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **May, 2017 − Rev. 5** 

**MBRS410L, NRVBS410L** 

## **THERMAL CHARACTERISTICS** 

|**Characteristic**|**Symbol**|**Min Pad**(Note 2)|**1 Inch** **Pad**|**Unit**|
|---|---|---|---|---|
|Thermal Resistance,<br>Junction−to−Lead<br>Thermal Resistance,<br>Junction−to−Ambient|R�JL<br>R�JA|12<br>109|7.0<br>59|°C/W|
|**ELECTRICAL CHARACTERISTICS**|||||
|Maximum Instantaneous Forward Voltage (Note 1)<br>(IF= 2.0 A)<br>(IF= 4.0 A)<br>(IF= 8.0 A)|VF|**TJ = 25**°**C**|**TJ = 100**°**C**|V|
|||0.31<br>0.33<br>0.35|0.200<br>0.225<br>0.250||
|Maximum Instantaneous Reverse Current (Note 1)<br>(Rated dc Voltage, VR= 5.0 V)<br>(Rated dc Voltage, VR= 10 V)|IR|**TJ = 25**°**C**|**TJ = 100**°**C**|mA|
|||2.0<br>5.0|100<br>200||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 2. Mounted with Minimum Recommended Pad Size, PC Board FR4. 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
100 100<br>VF @ 125 ° C<br>10 10 VF @ 125 ° C<br>100 ° C<br>100 ° C<br>1 1 °<br>° 25 C<br>75 C<br>75 ° C 25 ° C −40 ° C<br>0.1 0.1<br>0 0.1 0.2 0.3 0.4 0.5 0 0.1 0.2 0.3 0.4 0.5<br>VF, INSTANTANEOUS VOLTAGE (V) VF, INSTANTANEOUS VOLTAGE (V)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>1.00E+00 10000<br>f = 1 Mhz<br>IR @ 125 ° C<br>1.00E−01<br>100 ° C<br>75 ° C<br>1.00E−02<br>25 ° C<br>1.00E−03<br>25 ° C<br>1.00E−04 1000<br>0 2 4 6 8 10 0 2 4 6 8<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) 10<br>, FORWARD CURRENT (A) , FORWARD CURRENT (A)<br>IF IF<br>C, CAPACITANCE (pF)<br>, REVERSE CURRENT (A)<br>IR<br>**----- End of picture text -----**<br>


**Figure 3. Typical Reverse Current** 

**Figure 4. Typical Capacitance** 

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**2** 

**MBRS410L, NRVBS410L** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** (continued) 

**==> picture [492 x 611] intentionally omitted <==**

**----- Start of picture text -----**<br>
9 2<br>8 1.8<br>dc dc<br>1.6<br>7<br>1.4<br>6<br>1.2<br>5<br>1<br>4 SQUARE WAVE<br>0.8 SQUARE WAVE<br>3<br>0.6<br>2 0.4<br>1 0.2<br>0 0<br>100 105 110 115 120 125 130 0 1 2 3 4 5 6 7 8 9<br>TL, LEAD TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (A)<br>Figure 5. Current Derating (Junction−to−Lead) Figure 6. Forward Power Dissipation<br>100<br>D = 0.5<br>0.2<br>0.1<br>10<br>0.05<br>0.02<br>0.01<br>1<br>SINGLE PULSE<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, TIME (S)<br>Figure 7. Thermal Response, Junction−to−Ambient (min pad)<br>100<br>D = 0.5<br>0.2<br>10<br>0.1<br>0.05<br>0.02<br>1<br>0.01<br>SINGLE PULSE<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, TIME (S)<br>CURRENT (A)<br>, AVERAGE FORWARD<br>IF<br>, AVERAGE POWER DISSIPATION (W)<br>FO<br>P<br>C/W)<br>°<br>, TRANSIENT THERMAL RESISTANCE (<br>(t)<br>R<br>C/W)<br>°<br>, TRANSIENT THERMAL RESISTANCE (<br>(t)<br>R<br>**----- End of picture text -----**<br>


**Figure 8. Thermal Response, Junction−to−Ambient (1 inch pad)** 

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**3** 

**MBRS410L, NRVBS410L** 

## **PACKAGE DIMENSIONS** 

**SMC 2−LEAD** CASE 403AC ISSUE A 

**==> picture [159 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: INCHES.<br>**----- End of picture text -----**<br>


**==> picture [462 x 342] intentionally omitted <==**

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HE 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: INCHES.<br>E 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD<br>FLASH SHALL NOT EXCEED 0.254mm PER SIDE.<br>4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H.<br>5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA<br>=e<br>In / DETERMINED BY DIMENSION L.<br>MILLIMETERS INCHES<br>D DIM MIN MAX MIN MAX<br>A 1.95 2.61 0.077 0.103<br>A1 c A1 0.05 0.20 0.002 0.008<br>P A T 2D DETAIL A eee A2 1.90 2.41 0.075 0.095<br>b 2.90 3.20 0.114 0.126<br>TOP VIEW c 0.15 0.41 0.060 0.016<br>D 5.55 6.25 0.219 0.246<br>DETAIL A E 6.60 7.15 0.260 0.281<br>H E 7.75 8.15 0.305 0.321<br>A2 A L 0.75 1.60 0.030 0.063<br>(5 7 7 ——<br>L non Te —_y b t - | —} —<br>SIDE VIEW END VIEW<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>8.750<br>0.344<br>as<br>3.790<br>2X<br>0.149<br>yo<br>2X 2.250 mm SCALE 4:1<br>a 0.089 inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**MBRS410LT3/D** 

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