MBRS340T3G

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## Surface Mount Schottky Power Rectifier 

## MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G 

These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. 

## **Features** 

- Small Compact Surface Mountable Package with J-Bend Leads 

- Rectangular Package for Automated Handling 

- Highly Stable Oxide Passivated Junction 

- Very Low Forward Voltage Drop 

   - (0.5 V Max @ 3.0 A, TJ = 25°C) 

- Excellent Ability to Withstand Reverse Avalanche Energy Transients 

- Guard-Ring for Stress Protection 

- Device Passes ISO 7637 Pulse #1 

- SBRS8 and NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 

- Weight: 217 mg (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Polarity: Polarity Band on Plastic Body Indicates Cathode Lead 

- Device Meets MSL 1 Requirements 

- ESD Ratings: 

   - ♦ Machine Model = C (> 400 V) 

   - ♦ Human Body Model = 3B (> 8000 V) 

**SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS** 

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SMC  2−LEAD<br>CASE 403AC<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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AYWW<br>B3x �<br>�<br>B3x = Device Code<br>x = 2, 3 or 4<br>A = Assembly Location**<br>Y = Year<br>WW = Work Week<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

- **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MBRS320T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|MBRS330T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|MBRS340T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|NRVBS330T3G|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|SBRS8320T3G*|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|SBRS8340T3G*|SMC<br>(Pb−Free)|2,500 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **MBRS340T3/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **August, 2021 − Rev. 15** 

## **MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||||
|---|---|---|---|---|---|
|**Rating**|**Symbol**|**MBRS320T3G,**<br>**SBRS8320T3G**|**MBRS330T3G,**<br>**NRVBRS330T3G**|**MBRS340T3G,**<br>**SBRS8340T3G**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|20|30|40|V|
|Average Rectified Forward Current|IF(AV)|3.0 @ TL= 110°C<br>4.0 @ TL= 105°C|||A|
|Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave,<br>single phase, 60 Hz)|IFSM|80|||A|
|Operating Junction Temperature|TJ|−65 to +150|||°C|
|ISO 7637 Pulse #1<br>(100 V, 10�)||5000|||Pulses|
|ESD Ratings:<br>Machine Model = C<br>Human Body Model = 3B||> 400<br>> 8000|||V|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|Thermal Resistance, Junction−to−Lead|R�JL|11|°C/W|
|**ELECTRICAL CHARACTERISTICS**||||
|Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 3.0 A, TJ= 25°C)|VF|0.50|V|
|Maximum Instantaneous Reverse Current (Note 1)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 100°C)|iR|2.0<br>20|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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10 10<br>TJ = 125 ° C TJ = 100 ° C TJ = 125 ° C TJ = 100 ° C<br>1 TJ = 25 ° C 1 TJ = 25 ° C<br>T J  = −40 ° C T J  = −40 ° C<br>TJ = −65 ° C TJ = −65 ° C<br>0.1 0.1<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>CURRENT (AMPS) CURRENT (AMPS)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>**----- End of picture text -----**<br>


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**2** 

**MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** (continued) 

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1.E−01 1.E−01<br>TJ = 125 ° C<br>1.E−02 TJ = 125 ° C 1.E−02<br>1.E−03 1.E−03 TJ = 100 ° C<br>TJ = 100 ° C<br>1.E−04 1.E−04<br>TJ = 25 ° C<br>1.E−05 TJ = 25 ° C 1.E−05<br>1.E−06 1.E−06<br>0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>5 2<br>Freq = 20 kHz<br>4.5 dc R�JL = 11°C/W 1.8 SQUARE<br>4 1.6 WAVE dc<br>3.5 1.4 I PK /I O  =  �<br>3 1.2 IPK/IO = 5<br>SQUARE WAVE<br>2.5 1<br>2 0.8<br>1.5 0.6<br>1 0.4<br>0.5 0.2<br>0 0<br>90 100 110 120 130 140 150 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>TL, LEAD TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (A)<br>, REVERSE CURRENT (AMPS)<br>IR<br>, MAXIMUM REVERSE CURRENT (AMPS)<br>IR<br>, AVERAGE POWER DISSIPATION (W)<br>FO<br>, AVERAGE FORWARD CURRENT (AMPS) P<br>IO<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating** 

**Figure 6. Forward Power Dissipation** 

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700<br>TYPICAL CAPACITANCE AT 0 V = 658 pF TJ = 25 ° C<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 4 8 12 16 20 24 28 32 36 40<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Typical Capacitance** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SMC 2−LEAD** CASE 403AC ISSUE B 

## **SCALE 1:1** 

DATE 27 JUL 2017 

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HE<br>E<br>=<br>_ D<br>HD<br>A1 _ c<br>— a DETAIL A<br>TOP VIEW<br>DETAIL A<br>|<br>A2 A<br>L no s Todt b<br>SIDE VIEW END VIEW<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>8.750<br>0.344<br>oe<br>3.790<br>2X<br>7 0.149<br>2X 2.250 mm SCALE 4:1<br>ot 0.089 inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994. 

2. CONTROLLING DIMENSION: INCHES. 

3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.254mm PER SIDE. 

4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H. 

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5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA<br>DETERMINED BY DIMENSION L.<br>MILLIMETERS INCHES<br>DIM MIN MAX MIN MAX<br>A 1.95 2.61 0.077 0.103<br>A1 0.05 0.20 0.002 0.008<br>——— A2 1.90 2.41 0.075 0.095<br>b 2.90 3.20 0.114 0.126<br>c 0.15 0.41 0.006 0.016<br>D 5.55 6.25 0.219 0.246<br>EE. E 6.60 7.15 0.260 0.281<br>H E 7.75 8.15 0.305 0.321<br>L 0.75 1.60 0.030 0.063<br>GENERIC<br>MARKING DIAGRAM*<br>**----- End of picture text -----**<br>


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AYWW<br>XXXX<br>XXXX = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>(Note: Microdot may be in either location) , = Pb−Free Package<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”, |<br>may or may not be present.<br>**----- End of picture text -----**<br>


|**DOCUMENT NUMBER:**|**98AON97675F**|
|---|---|
|**DESCRIPTION:**|**SMC 2−LEAD**|



Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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