MBRS260T3G
Schottky Rectifier, 60 V, 2 A, Single, DO-214AA (SMB), 2 Pins, 630 mV
- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:60V; Forward Current If(AV):2A; Diode Configuration:Single; Diode Case Style:DO-214AA; No. of Pins:2Pins; Forward Voltage VF Max:630mV; Forward Surge Cu
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: MBRS2
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: DO-214AA (SMB)
- Diode Configuration: Single
- Forward Voltage Max: 630mV
- Forward Surge Current: 60A
- Average Forward Current: 2A
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 60V
| Delivery and price | |
|---|---|
| Units per pack | 7500 |
| Price | 0.076 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## Surface Mount Schottky Power Rectifier **SMB Power Surface Mount Package** ## MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. **www.onsemi.com** **SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS** ## **Features** - Compact Package with J−Bend Leads Ideal for Automated Handling - Highly Stable Oxide Passivated Junction - Guard−Ring for Over−Voltage Protection - Low Forward Voltage Drop - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* **==> picture [44 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> SMB<br>CASE 403A<br>**----- End of picture text -----**<br> ## **MARKING DIAGRAM** - These are Pb−Free Devices ## **Mechanical Characteristics** - Case: Molded Epoxy - Epoxy Meets UL 94 V−0 @ 0.125 in - Weight: 95 mg (Approximately) - Cathode Polarity Band - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - ESD Ratings: - ♦ Machine Model = C - ♦ Human Body Model = 3B **==> picture [115 x 100] intentionally omitted <==** **----- Start of picture text -----**<br> AYWW<br>B26<br>B26 = Specific Device Code<br>A = Assembly Location**<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br> (Note: Microdot may be in either location) - **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MBRS260T3G||| |NRVBS260T3G*|SMB|2,500 /| |NRVBS260T3G−VF01*|(Pb−Free)|Tape & Reel| |NRVBS260NT3G*||| |SRVBS260NT3G*||| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2013 **February, 2020 − Rev. 10** **MBRS260T3/D** **MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|60|V| |Average Rectified Forward Current<br>(At Rated VR, TL= 95°C)|IO|2.0|A| |Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|60|A| |Storage Temperature Range|Tstg|−55 to +150|°C| |Operating Junction Temperature|TJ|−55 to +125|°C| |Voltage Rate of Change<br>(Rated VR, TJ= 25°C)|dv/dt|10,000|V/�s| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Thermal Resistance, Junction−to−Lead (Note 1)<br>Thermal Resistance, Junction−to−Ambient (Note 2)|R�JL<br>R�JA|24<br>80|°C/W| 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Value**||**Unit**| |Maximum Instantaneous Forward Voltage (Note 3)<br>(iF= 1.0 A)<br>(iF= 2.0 A)|vF|**TJ = 25**°**C**|**TJ = 125**°**C**|V| |||0.51<br>0.63|0.475<br>0.55|| |Maximum Instantaneous Reverse Current (Note 3)<br>(VR= 60 V)|IR|**TJ = 25**°**C**|**TJ = 125**°**C**|mA| |||0.2|20|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 � s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **2** **MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N** ## **TYPICAL CHARACTERISTICS** **==> picture [245 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>TA = 150A = 150 = 150 ° C<br>1 TA = 125A = 125 = 125 ° C TA = 25A = 25 = 25 ° C<br>TA = 75A = 75 = 75 ° C<br>TA = −40A = −40 = −40 ° C<br>0.1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V)F, INSTANTANEOUS FORWARD VOLTAGE (V), INSTANTANEOUS FORWARD VOLTAGE (V)<br>CURRENT (A)<br>, INSTANTANEOUS FORWARD<br>IFF<br>**----- End of picture text -----**<br> **==> picture [491 x 380] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10<br>TA = 150 ° C TA = 150A = 150 = 150 ° C<br>TA = 125 ° C<br>1 TA = 75 ° C TA = 25 ° C 1 TA = 125A = 125 = 125 ° C TA = 25A = 25 = 25 ° C<br>TA = 75A = 75 = 75 ° C<br>TA = −40 ° C TA = −40A = −40 = −40 ° C<br>0.1 0.1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)F, INSTANTANEOUS FORWARD VOLTAGE (V), INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>1.0E−01 100<br>TA = 150 ° C 25 ° C<br>1.0E−02 f = 1 MHz<br>1.0E−03 TA = 125 ° C TA = 75 ° C<br>1.0E−04<br>1.0E−05 TA = 25 ° C<br>1.0E−06<br>1.0E−07 10<br>0 10 20 30 40 50 60 0 10 20 30 40 50 60<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (VOLTS)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>IF IFF<br>, REVERSE CURRENT (A) C, CAPACITANCE (pF)<br>IR<br>**----- End of picture text -----**<br> **Figure 3. Typical Reverse Current** **Figure 4. Typical Capacitance** **==> picture [490 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5 2<br>dc R � JL = 24 ° C/W 1.8<br>3<br>1.6<br>2.5 dc<br>1.4<br>2 1.2<br>SQUARE WAVE 1<br>1.5 SQUARE WAVE<br>0.8<br>1 0.6<br>0.4<br>0.5<br>0.2<br>0 0<br>60 70 80 90 100 110 120 130 140 150 0 0.5 1 1.5 2 2.5 3<br>TL, LEAD TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (AMPS)<br>, AVERAGE FORWARD CURRENT (A) , AVERAGE POWER DISSIPATION (W)<br>IF FO<br>P<br>**----- End of picture text -----**<br> **Figure 5. Current Derating − Junction to Lead** **Figure 6. Forward Power Dissipation** **www.onsemi.com** **3** **MBRS260T3G, NRVBS260N, NRVBS260T3G, SRVBS260N** **==> picture [491 x 431] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0E+00<br>50%<br>20%<br>1.0E−01<br>10%<br>5.0%<br>1.0E−02 2.0%<br>1.0%<br>1.0E−03<br>Rtjl(t) = Rtjl*r(t)<br>1.0E−04<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>Figure 7. Thermal Response − Junction to Case<br>1.0E+00<br>50%<br>20%<br>1.0E−01<br>10%<br>5.0%<br>1.0E−02<br>2.0%<br>1.0E−03<br>1.0%<br>Rtjl(t) = Rtjl*r(t)<br>1.0E−04<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>, TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>T<br>R<br>, TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>T<br>R<br>**----- End of picture text -----**<br> **Figure 8. Thermal Response − Junction to Ambient** **www.onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SMB** CASE 403A−03 ISSUE J DATE 19 JUL 2012 **==> picture [479 x 403] intentionally omitted <==** **----- Start of picture text -----**<br> SCALE 1:1 SCALE 1:1<br>Polarity Band Non−Polarity Band<br>HE<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.95 2.30 2.47 0.077 0.091 0.097<br>= b D SS A1 0.05 0.10 0.20 0.002 0.004 0.008<br>b 1.96 2.03 2.20 0.077 0.080 0.087<br>c 0.15 0.23 0.31 0.006 0.009 0.012<br>D 3.30 3.56 3.95 0.130 0.140 0.156<br>E 4.06 4.32 4.60 0.160 0.170 0.181<br>as POLARITY INDICATOROPTIONAL AS NEEDED H E 5.21 5.44 5.60 0.205 0.214 0.220<br>L 0.76 1.02 1.60 0.030 0.040 0.063<br>L1 0.51 REF 0.020 REF<br>A GENERIC<br>MARKING DIAGRAM*<br>A1<br>L L1 c<br>AYWW AYWW<br>XXXXX XXXXX<br>ae Qo (Lal.<br>SOLDERING FOOTPRINT*<br>Polarity Band Non−Polarity Band<br>2.261<br>0.089 XXXXX = Specific Device Code<br>—— A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>2.743<br>(Note: Microdot may be in either location)<br>0.108<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Lrt Pb−Free indicator, “G” or microdot “ ”, |<br>2.159 may or may not be present.<br>0.085 mm<br>SCALE 8:1<br>c— (—) inches<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **DOCUMENT NUMBER: 98ASB42669B DESCRIPTION: SMB** [[_ Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 4, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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