MBRS130LT3G

## MBRS130LT3G, SBRS8130LT3G 

## Schottky Power Rectifier **Surface Mount Power Package** 

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. 

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**SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 30 VOLTS** 

## **Features** 

- Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C) 

- Small Compact Surface Mountable Package with J−Bend Leads 

- Highly Stable Oxide Passivated Junction 

- Guard−Ring for Stress Protection 

- ESD Ratings: 

**SMB CASE 403A** 

   - ♦ Human Body Model = 3B (> 16000 V) 

   - ♦ Machine Model = C (> 400 V) 

- SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* 

- These are Pb−Free Devices 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded 

- Weight: 100 mg (approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Cathode Polarity Band 

## **MARKING DIAGRAM** 

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AYWW<br>1BL3<br>1BL3 = Specific Device Code<br>A = Assembly Location**<br>Y =  Year<br>WW = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

- **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. 

**ORDERING INFORMATION** 

**Device Package Shipping**[†] MBRS130LT3G SMB 2,500 / (Pb−Free) Tape & Reel SBRS8130LT3G* SMB 2,500 / (Pb−Free) Tape & Reel SBRS8130LT3G−VF01* SMB 2,500 / (Pb−Free) Tape & Reel ~~==~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **MBRS130LT3/D** 

**1** 

© Semiconductor Components Industries, LLC, 2012 **May, 2017 − Rev. 10** 

**MBRS130LT3G, SBRS8130LT3G** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|30|V|
|Average Rectified Forward Current<br>TL= 120°C<br>TL= 110°C|IF(AV)|1.0<br>2.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|40|A|
|Operating Junction Temperature|TJ|−65 to +125|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance,<br>Junction−to−Lead|�JL|12|°C/W|
|Thermal Resistance,<br>Junction−to−Ambient (TA= 25°C, Min Pad, 1 oz copper)<br>Junction−to−Ambient (TA= 25°C, 1” Pad, 1 oz copper)|R�JA|228.8<br>71.3|°C/W|



## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 1.0 A, TJ= 25°C)<br>(iF= 2.0 A, TJ= 25°C)|VF|0.395<br>0.445|V|
|Maximum Instantaneous Reverse Current (Note 1)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 100°C)|IR|1.0<br>10|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2%. 

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10 10<br>TJ = 100 ° C<br>TJ = 100 ° C<br>1 1<br>25 ° C<br>25 ° C<br>0.1 0.1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7<br>VF, INSTANTANEOUS VOLTAGE (V) VF, MAXIMUM INSTANTANEOUS VOLTAGE (V)<br>(A)<br>CURRENT (A)<br>, INSTANTANEOUS FORWARD CURRENTIF , MAXIMUM INSTANTANEOUS FORWARDIF<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

**Figure 2. Maximum Forward Voltage** 

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**2** 

**MBRS130LT3G, SBRS8130LT3G** 

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100 100<br>10 10 TJ = 100 ° C<br>T J  = 100 ° C<br>1.0 1.0<br>25 ° C<br>25 ° C<br>0.1 0.1<br>0.01 0.01<br>0.001 0.001<br>0 3 6 9 12 15 18 21 24 27 30 0 3 6 9 12 15 18 21 24 27 30<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Leakage Current Figure 4. Typical Maximum Reverse Leakage<br>Curent<br>2 0.9<br>1.8 0.8<br>DC<br>1.6<br>0.7<br>1.4<br>0.6<br>1.2 SQUARE WAVE<br>0.5<br>1 SQUARE<br>0.4<br>0.8<br>0.3<br>0.6<br>DC<br>0.2<br>0.4<br>0.2 0.1<br>0 0<br>100 105 110 115 120 125 130 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>TC, CASE TEMPERATURE ( ° C) IF(AV), AVERAGE FORWARD CURRENT (A)<br>, IREVERSE CURRENT (mA) , IREVERSE CURRENT (mA)<br>IR IR<br>, AVERAGE FORWARD CURRENT (A) , AVERAGE POWER DISSIPATION (W)<br>IF(AV) PF(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating (Case)** 

**Figure 6. Typical Power Dissipation** 

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400<br>350 NOTE: TYPICAL CAPACITANCE<br>AT 0 V = 290 pF<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 4 8 12 16 20 24 28 32<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Typical Capacitance** 

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**3** 

**MBRS130LT3G, SBRS8130LT3G** 

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1000<br>D = 0.5<br>100<br>0.2<br>0.1<br>0.05<br>10<br>0.02<br>0.01<br>1<br>SINGLE PULSE<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, TIME (s)<br>Figure 8. Thermal Response, Min Pad<br>100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>0.01<br>1<br>SINGLE PULSE<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, TIME (s)<br>Figure 9. Thermal Response, 1 Inch Pad<br>275 2.0<br>250 1.8 Power based on TA = 25 ° C 2.0 oz<br>225 1.6 1.0 oz<br>200<br>1.4<br>175<br>1.2<br>150<br>1.0<br>125<br>0.8<br>100<br>1.0 oz 0.6<br>75<br>50 2.0 oz 0.4<br>25 0.2<br>0 0<br>0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700<br>COPPER AREA (mm [2] ) COPPER AREA (mm [2] )<br>EFFECTIVE TRANSIENT THERMAL RESISTANCE<br>EFFECTIVE TRANSIENT THERMAL RESISTANCE<br>C/W)<br>°<br>JA (<br>�<br>POWER DISSIPATION (W)<br>**----- End of picture text -----**<br>


**Figure 10. Thermal Resistance vs. Copper Area** 

**Figure 11. Power Dissipation vs. Copper Area** 

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**4** 

**MBRS130LT3G, SBRS8130LT3G** 

## **PACKAGE DIMENSIONS** 

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SMB<br>CASE 403A−03<br>ISSUE J<br>HE<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.95 2.30 2.47 0.077 0.091 0.097<br>= > b D ——— A1 0.05 0.10 0.20 0.002 0.004 0.008<br>b 1.96 2.03 2.20 0.077 0.080 0.087<br>c 0.15 0.23 0.31 0.006 0.009 0.012<br>D 3.30 3.56 3.95 0.130 0.140 0.156<br>E 4.06 4.32 4.60 0.160 0.170 0.181<br>co POLARITY INDICATOROPTIONAL AS NEEDED : H E 5.21 5.44 5.60 0.205 0.214 0.220<br>L 0.76 1.02 1.60 0.030 0.040 0.063<br>L1 0.51 REF 0.020 REF<br>A<br>A1<br>eh L L1 c [oo] S S<br>SOLDERING FOOTPRINT*<br>2.261<br>0.089<br>F<br>7 2.743<br>0.108<br>|<br>2.159<br>0.085 mm<br>SCALE 8:1<br>cs (—) inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**MBRS130LT3/D** 

**5**