MBRM2H100T3G

## MBRM2H100T3G, NRVBM2H100T3G 

## Surface Mount Schottky Power Rectifier **POWERMITE**[®] **Power Surface Mount Package** 

The Schottky Powermite[®] employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite[®] has the same thermal performance as the SMA while being 50% smaller in footprint area. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical. 

## **Features** 

- Low Profile − Maximum Height of 1.1 mm 

- Small Footprint − Footprint Area of 8.45 mm[2] 

- Low VF Provides Higher Efficiency and Extends Battery Life 

- Supplied in 12 mm Tape and Reel 

- Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink 

- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- This is a Pb−Free Device 

## **Mechanical Characteristics:** 

- Powermite[®] is JEDEC Registered as D0−216AA 

- Case: Molded Epoxy 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Weight: 16.3 mg (Approximately) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds 

## **http://onsemi.com** 

## **SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 100 VOLTS** 

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CATHODE<br>$ ANODE<br>POWERMITE<br>CASE 457<br>MARKING DIAGRAM<br>M<br>1 2<br>B2H<br>15<br>M = Date Code<br>B2H = Device Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MBRM2H100T3G|Powermite<br>(Pb−Free)|12000/Tape &<br>Reel|
|NRVBM2H100T3G|Powermite<br>(Pb−Free)|12000/Tape &<br>Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **MBRM2H100/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **January, 2014 − Rev. 2** 

**MBRM2H100T3G, NRVBM2H100T3G** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|100|V|
|Average Rectified Forward Current<br>(TL= 160°C)|IO|2.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|50|A|
|Storage and Operating Junction Temperature Range (Note 1)|Tstg, TJ|−65 to +175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Lead (Note 2)|�JCL|12|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|75|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 3)|R�JA|260|°C/W|
|**ELECTRICAL CHARACTERISTICS**||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 4)<br>(IF= 1.0 A, TJ= 25°C)<br>(IF= 2.0 A, TJ= 25°C)<br>(IF= 1.0 A, TJ= 125°C)<br>(IF= 2.0 A, TJ= 125°C)|VF|0.76<br>0.84<br>0.61<br>0.68|V|
|Maximum Instantaneous Reverse Current (Note 4)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 125°C)|IR|20<br>1.0|�A<br>mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Mounted with 700 mm[2] copper pad size (Approximately 1 in[2] ) 1 oz FR4 Board. 

3. Mounted with pad size approximately 20 mm[2] copper, 1 oz FR4 Board. 

4. Pulse Test: Pulse Width ≤ 380 � s, Duty Cycle ≤ 2.0%. 

**http://onsemi.com** 

**2** 

**MBRM2H100T3G, NRVBM2H100T3G** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>150 ° C 125 ° C 25 ° C 150 ° C 125 ° C 25 ° C<br>10 10<br>1 1<br>0.1 0.1<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)F, INSTANTANEOUS FORWARD VOLTAGE (V), INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>10 10<br>150 ° C<br>1 150 ° C 1<br>125 ° C<br>0.1 125 ° C 0.1<br>0.01 0.01<br>25 ° C<br>0.001 0.001<br>25 ° C<br>0.0001 0.0001<br>0.00001 0.00001<br>0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>4.0 3<br>R � JL = 12 ° C/W 2.8 T J  = 175 ° C<br>3.5 2.6<br>dc<br>2.4<br>3.0 2.2 Square Wave<br>2<br>2.5<br>Square Wave 1.8<br>2.0 1.6 dc<br>1.4<br>1.2<br>1.5<br>1<br>0.8<br>1.0<br>0.6<br>0.5 0.4<br>0.2<br>0 0<br>135 140 145 150 155 160 165 170 175 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3<br>TL, LEAD TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (A)<br>, FORWARD CURRENT (A) , FORWARD CURRENT (A)<br>IF IFF<br>, REVERSE CURRENT (mA) , REVERSE CURRENT (mA)<br>IR IR<br>, AVERAGE FORWARD CURRENT (A)<br>, AVERAGE POWER DISSIPATION (W)<br>IF(AV) PFO<br>**----- End of picture text -----**<br>


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100<br>150 ° C 125 ° C 25 ° C<br>10<br>1<br>0.1<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V)F, INSTANTANEOUS FORWARD VOLTAGE (V), INSTANTANEOUS FORWARD VOLTAGE (V)<br>, FORWARD CURRENT (A)<br>IFF<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating** 

**Figure 6. Forward Power Dissipation** 

**http://onsemi.com** 

**3** 

**MBRM2H100T3G, NRVBM2H100T3G** 

## **TYPICAL CHARACTERISTICS** 

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140<br>TJ = 25 ° C<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance** 

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1000<br>50% (DUTY CYCLE)<br>100 25%<br>10%<br>5.0%<br>10 2.0%<br>1.0%<br>1.0<br>0.1<br>SINGLE PULSE<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>PULSE TIME (s)<br>Figure 8. Thermal Response, Junction−to−Ambient (20 mm [2]  pad)<br>100<br>50% (DUTY CYCLE)<br>25%<br>10 10%<br>5.0%<br>2.0%<br>1.0<br>1.0%<br>0.1<br>SINGLE PULSE<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>PULSE TIME (s)<br>R(t) (C/W)<br>R(t) (C/W)<br>**----- End of picture text -----**<br>


**Figure 9. Thermal Response, Junction−to−Ambient (1 in[2] pad)** 

POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. 

**http://onsemi.com** 

**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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**POWERMITE** CASE 457 ISSUE G 

DATE 12 JAN 2022 

**SCALE 4:1** 

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GENERIC<br>MARKING DIAGRAMS*<br>M M<br>1 XXX � 2 1 XXX � 2<br>STYLE 1 STYLE 2<br>M<br>1 XXX � 2<br>XXX = Specific Device Code<br>M = Date Code<br>STYLE 3 � = Pb−Free Package<br>DOCUMENT NUMBER: 98ASB14853C<br>DESCRIPTION: POWERMITE<br>**----- End of picture text -----**<br>


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STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. CATHODE PIN 1. ANODE OR CATHODE PIN 1. ANODE<br>2. ANODE 2. CATHODE OR ANODE 2. CATHODE<br>(BI−DIRECTIONAL)<br>**----- End of picture text -----**<br>


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*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ � ”, may<br>or may not be present. Some products may<br>not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

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