MBRM110LT1G

## MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G 

## Surface Mount Schottky Power Rectifier **POWERMITE**[] **Power Surface Mount Package** 

The Schottky POWERMITE[] employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the POWERMITE[] has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles,  1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical. 

## **Features** 

- Ultra Low VF 

- 1st in Marketplace with a 10 VR Schottky Rectifier 

- Low Profile − Maximum Height of 1.1 mm 

- Small Footprint − Footprint Area of 8.45 mm[2] 

- Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink 

- ESD Ratings: 

   - Human Body Model > 4000 V (Class 3) 

   - Machine Model > 400 V (Class C) 

- AEC−Q101 Qualified and PPAP Capable 

- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

- All Packages are Pb−Free* 

## **Mechanical Characteristics:** 

- POWERMITE[] is JEDEC Registered as D0−216AA 

- Case: Molded Epoxy 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Weight: 62 mg (Approximately) 

## **http://onsemi.com** 

**SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 10 VOLTS** 

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ANODE<br>CATHODE +<br>POWERMITE<br>CASE 457<br>PLASTIC<br>MARKING DIAGRAM<br>**----- End of picture text -----**<br>


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M<br>1 2<br>1L1<br>1 [=]<br>M = Date Code<br>1L1 = Device Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MBRM110LT1G|POWERMITE<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|NRVBM110LT1G|POWERMITE<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|MBRM110LT3G|POWERMITE<br>(Pb−Free)|12,000 /<br>Tape & Reel|
|NRVBM110LT3G|POWERMITE<br>(Pb−Free)|12,000 /<br>Tape & Reel|



   - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260  C Maximum for 10 Seconds 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **MBRM110L/D** 

**1** 

 Semiconductor Components Industries, LLC, 2012 **January, 2012 − Rev. 2** 

**MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G** 

## **MAXIMUM RATINGS** 

|**Rating**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|10|V|
|Average Rectified Forward Current<br>(TL= 115C, R�JL= 35C/W)|IO|1.0|A|
|Non−Repetitive Peak Surge Current<br>(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)|IFSM|50|A|
|Storage Temperature|Tstg|−55 to 125|C|
|Operating Junction Temperature|TJ|−55 to 125|C|
|Voltage Rate of Change<br>(Rated VR, TJ= 25C)|dv/dt|10,000|V/�s|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Lead (Anode) (Note 1)<br>Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)<br>Thermal Resistance, Junction−to−Ambient (Note 1)|Rtjl<br>Rtjtab<br>Rtja|35<br>23<br>277|C/W|



1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9. 

## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**||**Unit**|
|Maximum Instantaneous Forward Voltage (Note 2)<br>(IF= 0.1 A)<br>(IF= 1.0 A)<br>(IF= 2.0 A)|VF|**TJ = 25****C**|**TJ = 100****C**|V|
|||0.280<br>0.365<br>0.415|0.175<br>0.275<br>0.325||
|Maximum Instantaneous Reverse Current (Note 2)<br>(VR= 5.0 V)<br>(VR= 10 V)|IR|**TJ = 25****C**|**TJ = 100****C**|mA|
|||0.2<br>0.5|30<br>60||



2. Pulse Test: Pulse Width  250 � s, Duty Cycle  2%. 

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10<br>TJ = 125C<br>100C<br>75C 25C −55C<br>1<br>0.1<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7<br>IF, INSTANTANEOUS FORWARD CURRENT (AMPS) VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

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10<br>TJ = 125C<br>100C<br>75C<br>1<br>25C −55C<br>0.1<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7<br>IF, INSTANTANEOUS FORWARD CURRENT (AMPS) VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 2. Maximum Forward Voltage** 

**http://onsemi.com** 

**2** 

**MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G** 

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1E−1 1E+0<br>TJ = 125C TJ = 125C<br>1E−2 1E−1<br>100C 100C<br>1E−3 75C 1E−2 75C<br>1E−4 1E−3<br>25C 25C<br>1E−5 1E−4<br>1E−6 1E−5<br>0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>1.8<br>dc<br>1.6<br>1.4<br>1.2 SQUARE WAVE<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 20 40 60 80 100 120 140<br>TL, LEAD TEMPERATURE (C)<br>, INSTANTANEOUS REVERSE VOLTAGE (VOLTS) , INSTANTANEOUS REVERSE VOLTAGE (VOLTS)<br>IR IR<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating − Junction to Lead** 

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500 0.45<br>450 0.4<br>dc<br>400 0.35<br>0.3<br>350 SQUARE WAVE<br>0.25<br>300<br>250 TJ = 25C 0.2<br>f = 1 MHz 0.15<br>200<br>0.1<br>150 0.05<br>100 0<br>0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VR, REVERSE VOLTAGE (VOLTS) IO, AVERAGE FORWARD CURRENT (AMPS)<br>Figure 6. Typical Capacitance Figure 7. Forward Power Dissipation<br>C, CAPACITANCE (pF)<br>, AVERAGE POWER DISSIPATION (WATTS)<br>FO<br>P<br>**----- End of picture text -----**<br>


**http://onsemi.com** 

**3** 

**MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G** 

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1.0<br>50%<br>20%<br>0.1<br>10%<br>5.0%<br>2.0%<br>0.01<br>1.0%<br>Rtjl(t) = Rtjl * r(t)<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100<br>T, TIME (s)<br>, TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>(T)<br>R<br>**----- End of picture text -----**<br>


**Figure 8. Thermal Response Junction to Lead** 

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1.0<br>50%<br>20%<br>0.1<br>10%<br>5.0%<br>0.01<br>2.0%<br>Rtjl(t) = Rtjl * r(t)<br>1.0%<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1,000<br>T, TIME (s)<br>, TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>(T)<br>R<br>**----- End of picture text -----**<br>


**Figure 9. Thermal Response Junction to Ambient** 

POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. 

**http://onsemi.com** 

**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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**POWERMITE** CASE 457 ISSUE G 

DATE 12 JAN 2022 

**SCALE 4:1** 

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GENERIC<br>MARKING DIAGRAMS*<br>M M<br>1 XXX � 2 1 XXX � 2<br>STYLE 1 STYLE 2<br>M<br>1 XXX � 2<br>XXX = Specific Device Code<br>M = Date Code<br>STYLE 3 � = Pb−Free Package<br>DOCUMENT NUMBER: 98ASB14853C<br>DESCRIPTION: POWERMITE<br>**----- End of picture text -----**<br>


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STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. CATHODE PIN 1. ANODE OR CATHODE PIN 1. ANODE<br>2. ANODE 2. CATHODE OR ANODE 2. CATHODE<br>(BI−DIRECTIONAL)<br>**----- End of picture text -----**<br>


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*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ � ”, may<br>or may not be present. Some products may<br>not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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© Semiconductor Components Industries, LLC, 2019 

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