MBRM110ET1G

## MBRM110ET1G, NRVBM110ET1G 

## Surface Mount Schottky Power Rectifier **POWERMITE**[] **Power Surface Mount Package** 

The Schottky POWERMITE[] employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the POWERMITE[] has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles,  1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical. 

## **Features** 

- Low IR Extends Battery Life 

- Low Profile − Maximum Height of 1.1 mm 

- Small Footprint − Footprint Area of 8.45 mm[2] 

- 150  C Operating Junction Temperature 

- Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink 

## **http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 10 VOLTS** 

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ANODE<br>CATHODE +<br>POWERMITE<br>CASE 457<br>PLASTIC<br>**----- End of picture text -----**<br>


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MARKING DIAGRAM<br>**----- End of picture text -----**<br>


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M<br>1 2<br>1E1<br>{=<br>M = Date Code<br>1E1 = Device Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


- ESD Ratings: 

   - Human Body Model = 3B (> 16 kV) 

   - Machine Model = V (> 400 V) 

- AEC−Q101 Qualified and PPAP Capable 

- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

- All Packages are Pb−Free* 

## **Mechanical Characteristics:** 

- POWERMITE[] is JEDEC Registered as D0−216AA 

- Case: Molded Epoxy 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

**ORDERING INFORMATION Device Package Shipping**[†] MBRM110ET1G POWERMITE 3,000 / (Pb−Free) Tape & Reel NRVBM110ET1G POWERMITE 3,000 / (Pb−Free) Tape & Reel MBRM110ET3G POWERMITE 12,000 / (Pb−Free) Tape & Reel ~~===~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

- Weight: 16.3 mg (Approximately) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260  C Maximum for 10 Seconds 

> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **MBRM110E/D** 

**1** 

 Semiconductor Components Industries, LLC, 2012 **January, 2012 − Rev. 3** 

**MBRM110ET1G, NRVBM110ET1G** 

## **MAXIMUM RATINGS** 

|**Rating**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|10|V|
|Average Rectified Forward Current<br>(TL= 100C)|IO|1.0|A|
|Non−Repetitive Peak Surge Current<br>(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)|IFSM|50|A|
|Storage Temperature|Tstg|−55 to +150|C|
|Operating Junction Temperature|TJ|−55 to +150|C|
|Voltage Rate of Change<br>(Rated VR, TJ= 25C)|dv/dt|10,000|V/�s|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Lead (Anode) (Note 1)<br>Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)<br>Thermal Resistance, Junction−to−Ambient (Note 1)|Rtjl<br>Rtjtab<br>Rtja|35<br>23<br>277|C/W|



1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9. 

## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**||**Unit**|
|Maximum Instantaneous Forward Voltage (Note 2)<br>(IF= 0.1 A)<br>(IF= 1.0 A)<br>(IF= 2.0 A)|VF|**TJ = 25****C**|**TJ = 100****C**|V|
||VF|0.455<br>0.530<br>0.595|0.360<br>0.455<br>0.540|V|
|Maximum Instantaneous Reverse Current (Note 2)<br>(VR= 5.0 V)<br>(VR= 10 V)|IR|**TJ = 25****C**|**TJ = 100****C**|�A|
|||0.5<br>1.0|300<br>500||



2. Pulse Test: Pulse Width  250 � s, Duty Cycle  2%. 

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10<br>TJ = 150  C<br>TJ = 100  C TJ = 25  C<br>TJ = -40  C<br>1.0<br>0.1<br>0.2 0.4 0.6 0.8<br>vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)<br>iF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

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10<br>TJ = 150  C<br>TJ = 100  C<br>1.0<br>TJ = 25  C<br>0.1<br>0.2 0.4 0.6 0.8<br>VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)<br>IF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>**----- End of picture text -----**<br>


**Figure 2. Maximum Forward Voltage** 

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**2** 

**MBRM110ET1G, NRVBM110ET1G** 

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100E-3 100E-3<br>10E-3 10E-3 <br>TJ = 150 C<br>1E-3 T J  = 150  C 1E-3 TJ = 100  C<br>100E-6 100E-6<br>T J  = 100  C<br>10E-6 10E-6<br>1E-6 1E-6 TJ = 25  C<br>100E-9 T J  = 25  C 100E-9<br>10E-9 10E-9<br>0 2.5 5 7.5 10 0 2.5 5 7.5 10<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>, REVERSE CURRENT (AMPS)<br>IR<br>, MAXIMUM REVERSE CURRENT (AMPS)<br>IR<br>**----- End of picture text -----**<br>


**Figure 3. Typical Reverse Current** 

**Figure 4. Maximum Reverse Current** 

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1.8 0.7<br>FREQ = 20 kHz dc<br>dc<br>1.6 SQUARE<br>0.6<br>WAVE<br>1.4 Ipk/Io = �<br>0.5<br>1.2 SQUARE WAVE Ipk/Io = 5<br>1.0 0.4<br>Ipk/Io = � Ipk/Io = 10<br>0.8 0.3<br>Ipk/Io = 5 Ipk/Io = 20<br>0.6<br>Ipk/Io = 10 0.2<br>0.4<br>Ipk/Io = 20 0.1<br>0.2<br>0 0<br>25 45 65 85 105 125 145 165 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>TL, LEAD TEMPERATURE (  C) IO, AVERAGE FORWARD CURRENT (AMPS)<br>Figure 5. Current Derating Figure 6. Forward Power Dissipation<br>1000<br>TJ = 25  C<br>100<br>10<br>0 1 2 3 4 5 6 7 8 9 10<br>VR, REVERSE VOLTAGE (VOLTS)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IO<br>PFO, AVERAGE POWER DISSIPATION (WATTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance** 

**http://onsemi.com** 

**3** 

**MBRM110ET1G, NRVBM110ET1G** 

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1.0<br>50%<br>20%<br>0.1<br>10%<br>5.0%<br>2.0%<br>0.01<br>1.0%<br>Rtjl(t) = Rtjl * r(t)<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100<br>T, TIME (s)<br>Figure 8. Thermal Response Junction to Lead<br>1.0<br>50%<br>20%<br>0.1<br>10%<br>5.0%<br>0.01<br>2.0%<br>Rtjl(t) = Rtjl * r(t)<br>1.0%<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1,000<br>T, TIME (s)<br>, TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>(T)<br>R<br>, TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>(T)<br>R<br>**----- End of picture text -----**<br>


**Figure 9. Thermal Response Junction to Ambient** 

**http://onsemi.com 4** 

**MBRM110ET1G, NRVBM110ET1G** 

## **PACKAGE DIMENSIONS** 

**POWERMITE** CASE 457−04 

ISSUE E 

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NOTES:<br>−A− C F 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>J 0.08 (0.003) M T B S C [S] 2. CONTROLLING DIMENSION: MILLIMETER.<br>3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,<br>PROTRUSIONS OR GATE BURRS. MOLD FLASH,<br>S PROTRUSIONS OR GATE BURRS SHALL NOT<br>EXCEED 0.15 (0.006) PER SIDE.<br>MILLIMETERS INCHES<br>PIN 1 DIM MIN MAX MIN MAX<br>−B− A 1.75 2.05 0.069 0.081<br>K B 1.75 2.18 0.069 0.086<br>C 0.85 1.15 0.033 0.045<br>PIN 2 D 0.40 0.69 0.016 0.027<br>F 0.70 1.00 0.028 0.039<br>H -0.05 +0.10 -0.002 +0.004<br>R J 0.10 0.25 0.004 0.010<br>L K 3.60 3.90 0.142 0.154<br>L 0.50 0.80 0.020 0.031<br>ii fare s R 1.20 1.50 0.047 0.059<br>J S 0.50 REF : 0.019 REF<br>H D STYLE 1:<br>PIN 1. CATHODE<br>ia −T− 0.08 (0.003) M T B S C [S] 2. ANODE<br>SOLDERING FOOTPRINT*<br>0.635<br>0.025<br>2.67<br>0.105 0.762<br>0.030<br>pote<br>2.54 1.27<br>0.100 0.050<br>i<br>SCALE 10:1 mm<br>inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. 

**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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## **LITERATURE FULFILLMENT** : 

**MBRM110E/D** 

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