MBRF40250TG

## Switch-mode Schottky Power Rectifier 250 V, 40 A 

## MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG 

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**MARKING** 4 **DIAGRAMS TO−220 (2−LEAD) CASE 221B** ~~BS~~ AYWW B40250G 3 1, 4 K A 1 3 e ~~o~~ 4 **TO−220 CASE 221A** y **T SUFFIX** AYWW B40250TG 1 A K A 2, 4 3 1 2 3 **TO−220 FULLPACK** Ny ~~—~~ **CASE 221D T SUFFIX** AYWW B40250TG A K A 1 2 3 1 E 2 ~~ee~~ 3 

## **Features** 

- 250 V Blocking Voltage 

- Low Forward Voltage Drop, VF = 0.86 V 

- Soft Recovery Characteristic, TRR < 35 ns 

- Stable Switching Performance Over Temperature 

- These Devices are Pb−Free and are RoHS Compliant 

## **Benefits** 

- Reduces or Eliminates Reverse Recovery Oscillations 

- Minimizes Need for EMI Filtering 

- Reduces Switching Losses 

- Improved Efficiency 

## **Applications** 

- Power Supply 

- Power Management 

- Automotive 

- Instrumentation 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded 

- Weight: 1.9 grams (approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 4 **D[2] PAK 3** AY   WW • Epoxy Meets UL 94 V−0 at 0.125 in **CASE 418B** B40250TG AKA 1 1 3 4 3 a ~~ne~~ B40250 = Device Code T = 3 pins A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package KA, AKA = Polarity Designator 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 4 of this data sheet. 

Publication Order Number: **MBR40250/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **July, 2020 − Rev. 15** 

**MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|250|V|
|Average Rectified Forward Current<br>(Rated VR) TC= 82°C MBR40250, MBR40250T, MBRB40250T<br>(Rated VR) TC= 46°C MBRF40250T|IF(AV)|40|A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz) TC= 82°C MBR40250, MBR40250T, MBRB40250T<br>(Rated VR, Square Wave, 20 kHz) TC= 46°C MBRF40250T|IFRM|80|A|
|Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|150|A|
|Storage Temperature|Tstg|�65 to +175|°C|
|Operating Junction Temperature|TJ|�65 to +150|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Thermal Resistance<br>Junction−to−Case<br>MBR40250(T) and MBRB40250T<br>MBRF40250<br>Junction−to−Ambient<br>MBR40250(T)<br>MBRF40250<br>MBRB40250T|R�JC<br>R�JA|2.0<br>3.0<br>60<br>50<br>50|°C/W|



## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 1)<br>IF= 20 A, TC= 25°C<br>IF= 20 A, TC= 125°C<br>IF= 40 A, TC= 25°C<br>IF= 40 A, TC= 125°C|VF|0.86<br>0.71<br>0.97<br>0.86|V|
|Maximum Instantaneous Reverse Current (Note 1)<br>Rated DC Voltage, TC= 25°C<br>Rated DC Voltage, TC= 125°C|IR|0.25<br>30|mA|
|Maximum Reverse Recovery Time<br>IF= 1.0 A, di/dt = 50 A/�s, TC= 25°C|trr|35|ns|
|**DYNAMIC CHARACTERISTICS**||||
|Capacitance<br>VR= −5.0 V, TC= 25°C, Frequency = 1.0 MHz|CT|500|pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG** 

## **TYPICAL CHARACTERISTICS** 

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100<br>TJ = 150 ° C<br>TJ = 125 ° C<br>10<br>TJ = 100 ° C<br>TJ = 25 ° C<br>1<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>, INSTANTANEOUS FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br>


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100<br>TJ = 150 ° C<br>10 TJ = 100 ° C<br>TJ = 125 ° C<br>TJ = 25 ° C<br>1<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VF, MAXIMUM FORWARD VOLTAGE (V)<br>, MAXIMUM FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

**Figure 2. Maximum Forward Voltage** 

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1.0E-01 700<br>TJ = 25 ° C<br>1.0E-02 TJ = 150 ° C 600<br>1.0E-03 TJ = 125 ° C 500<br>TJ = 100 ° C 400<br>1.0E-04<br>300<br>1.0E-05<br>200<br>1.0E-06<br>100<br>TJ = 25 ° C<br>1.0E-07 0<br>25 50 75 100 125 150 175 200 225 250 1 10 100<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Current Figure 4. Typical Capacitance<br>70 50<br>65 DC RATED VOLTAGE MBR40250<br>60 R � JC = 2 ° C/W MBR40250T<br>55 40 MBRB40250T<br>50<br>45<br>30<br>40 SQUARE WAVE<br>35 SQUARE WAVE<br>30<br>20<br>25<br>20<br>DC<br>15 MBR40250 10<br>10 MBR40250T<br>5 MBRB40250T<br>0 0<br>0 10 20 30 40 50 60 70 80 90 100110120130 140150 0 5 10 15 20 25 30 35 40<br>TC, CASE TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (A)<br>C, CAPACITANCE (pF)<br>, REVERSE CURRENT (A)<br>IR<br>, AVERAGE FORWARD CURRENT (A) , AVERAGE POWER DISSIPATION (W)<br>IF(AV) PF(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating (Case) for MBR40250, MBR40250T and MBRB40250T** 

**Figure 6. Forward Power Dissipation for MBR40250, MBR40250T and MBRB40250T** 

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**3** 

**MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG** 

## **TYPICAL CHARACTERISTICS** 

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70 50<br>65 RATED VOLTAGE MBRF40250T<br>60 R � JC = 3 ° C/W<br>55 DC 40<br>50<br>45<br>30<br>40<br>35 SQUARE WAVE<br>30 SQUARE WAVE 20<br>25<br>20<br>DC<br>15 10<br>10<br>5 MBRF40250T<br>0 0<br>0 10 20 30 40 50 60 70 80 90 100110120130 140150 0 5 10 15 20 25 30 35 40<br>TC, CASE TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (A)<br>, AVERAGE FORWARD CURRENT (A) , AVERAGE POWER DISSIPATION (W)<br>IF(AV) F(AV)<br>P<br>**----- End of picture text -----**<br>


**Figure 7. Current Derating (Case) for MBRF40250T** 

**Figure 8. Forward Power Dissipation for MBRF40250T** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|MBR40250G|TO−220 (2−LEAD)<br>(Pb−Free)|50 Units / Rail|
|MBR40250TG|TO−220<br>(Pb−Free)|50 Units / Rail|
|MBRF40250TG|TO−220 FULLPACK<br>(Pb−Free)|50 Units / Rail|
|MBRB40250TG|D2PAK 3<br>(Pb−Free)|50 Units / Rail|
|MBRB40250TT4G|D2PAK 3<br>(Pb−Free)|800 Units / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

FULLPAK is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A ISSUE AK 

DATE 13 JAN 2022 

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STYLE 1: STYLE 2: STYLE 3: STYLE 4:<br>PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2<br>3. EMITTER 3. COLLECTOR 3. GATE 3. GATE<br>4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2<br>STYLE 5: STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br>2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY<br>4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12:<br>PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2<br>3. EMITTER 3. DRAIN 3. GATE 3. GATE<br>4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42148B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220 PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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TO−220, 2−LEAD<br>CASE 221B−04<br>ISSUE F<br>DATE 12 APR 2013<br>o<br>NOTES:<br>C 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>Q B F T S 2. CONTROLLING DIMENSION: INCH.<br>INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>SCALE 1:1 4 A 0.595 0.620 15.11 15.75<br>B 0.380 0.405 9.65 10.29<br>ae A Lt Bobs, C 0.160 0.190 4.06 4.82<br>U D 0.025 0.039 0.64 1.00<br>1 3 F 0.142 0.161 3.61 4.09<br>H G 0.190 0.210 4.83 5.33<br>H 0.110 0.130 2.79 3.30<br>K J 0.014 0.025 0.36 0.64<br>K 0.500 0.562 12.70 14.27<br>L 0.045 0.060 1.14 1.52<br>Q 0.100 0.120 2.54 3.04<br>L R 0.080 0.110 2.04 2.79<br>D R S 0.045 0.055 1.14 1.39<br>T 0.235 0.255 5.97 6.48<br>G J U 0.000 0.050 0.000 1.27<br>STYLE 1: STYLE 2:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. N/A  2. N/A<br> 3. ANODE  3. CATHODE<br> 4. CATHODE  4. ANODE<br>**----- End of picture text -----**<br>


**DOCUMENT NUMBER: 98ASB42149B DESCRIPTION: TO−220, 2−LEAD** ~~_~~ 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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MECHANICAL CASE OUTLINE<br>PACKAGE DIMENSIONS<br>TO−220 FULLPAK<br>CASE 221D−03<br>ISSUE K<br>S DATE 27 FEB 2009<br>NOTES:<br>−T− SEATINGPLANE 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>−B− C 2. CONTROLLING DIMENSION: INCH<br>F 3. 221D-01 THRU 221D-02 OBSOLETE, NEW<br>S STANDARD 221D-03.<br>Q U INCHES MILLIMETERS<br>SCALE 1:1 DIM MIN MAX MIN MAX<br>A A 0.617 0.635 15.67 16.12<br>B 0.392 0.419 9.96 10.63<br>1 2 3 C 0.177 0.193 4.50 4.90<br>D 0.024 0.039 0.60 1.00<br>a H n ==So= F 0.116 0.129 2.95 3.28<br>−Y− G 0.100 BSC 2.54 BSC<br>K<br>H 0.118 0.135 3.00 3.43<br>J 0.018 0.025 0.45 0.63<br>hd ay : —<br>|| oe === K 0.503 0.541 12.78 13.73<br>G J L 0.048 0.058 1.23 1.47<br>N 0.200 BSC 5.08 BSC<br>N R Q 0.122 0.138 3.10 3.50<br>_ L R 0.099 0.117 2.51 2.96<br>S 0.092 0.113 2.34 2.87<br>D 3 PL U 0.239 0.271 6.06 6.88<br>0.25 (0.010) M B M Y<br>MARKING<br>DIAGRAMS<br>STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. GATE PIN 1. BASE PIN 1. ANODE<br>2. DRAIN 2. COLLECTOR 2. CATHODE<br>3. SOURCE 3. EMITTER 3. ANODE<br>Qo Qo<br>STYLE 4: STYLE 5: STYLE 6: xxxxxxG AYWW<br>PIN 1. CATHODE PIN 1. CATHODE PIN 1. MT 1 AYWW xxxxxxG<br>2.3. ANODECATHODE  2. 3. ANODEGATE  2. 3. MT 2GATE AKA<br>tr | ot<br>Bipolar Rectifier<br>xxxxxx = Specific Device Code A = Assembly Location<br>G = Pb−Free Package Y = Year<br>A = Assembly Location WW = Work Week<br>Y = Year xxxxxx = Device Code<br>WW = Work Week G = Pb−Free Package<br>AKA = Polarity Designator<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42514B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−220 FULLPAK PAGE 1 OF 1** ~~ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **D[2] PAK 3** 

CASE 418B−04 

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ISSUE L<br>SCALE 1:1 NOTES:<br>C 1. DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>−B− V 3. 418B−01 THRU 418B−03 OBSOLETE,NEW STANDARD 418B−04.<br>W<br>4 INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>A 0.340 0.380 8.64 9.65<br>B 0.380 0.405 9.65 10.29<br>A C 0.160 0.190 4.06 4.83<br>S D 0.020 0.035 0.51 0.89<br>1 2 3 E 0.045 0.055 1.14 1.40<br>F 0.310 0.350 7.87 8.89<br>G 0.100 BSC 2.54 BSC<br>−T− H 0.080 0.110 2.03 2.79<br>K J 0.018 0.025 0.46 0.64<br>SEATINGPLANE G J W KL 0.0900.052 0.0720.110 2.291.32 2.791.83<br>M 0.280 0.320 7.11 8.13<br>ae H N 0.197 REF 5.00 REF<br>D 3 PL P 0.079 REF 2.00 REF<br>R 0.039 REF 0.99 REF<br>0.13 (0.005) M T B M S 0.575 0.625 14.60 15.88<br>V 0.045 0.055 1.14 1.40<br>VARIABLE<br>CONFIGURATION<br>ZONE N P<br>R<br>U<br>L L L<br>M M M<br>F F F<br>VIEW W−W VIEW W−W VIEW W−W<br>1 2 3<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6:<br>PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. GATE PIN 1. CATHODE PIN 1. NO CONNECT<br>2. COLLECTOR 2. DRAIN 2. CATHODE 2. COLLECTOR 2. ANODE 2. CATHODE<br>3. EMITTER 3. SOURCE 3. ANODE 3. EMITTER 3. CATHODE 3. ANODE<br>4. COLLECTOR 4. DRAIN 4. CATHODE 4. COLLECTOR 4. ANODE 4. CATHODE<br>**----- End of picture text -----**<br>


DATE 17 FEB 2015 

## **MARKING INFORMATION AND FOOTPRINT ON PAGE 2** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 1 OF 2** ~~|eee1~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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D [2] PAK 3<br>CASE 418B−04<br>ISSUE L<br>GENERIC<br>MARKING DIAGRAM*<br>xx AYWW<br>xxxxxxxxG<br>xxxxxxxxx xxxxxxxxG<br>AYWW<br>AWLYWWG  AKA<br>oe<br>IC Standard Rectifier<br>xx = Specific Device Code<br>A = Assembly Location<br>WL = Wafer Lot<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>AKA = Polarity Indicator<br>**----- End of picture text -----**<br>


DATE 17 FEB 2015 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

## **SOLDERING FOOTPRINT*** 

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**----- Start of picture text -----**<br>
10.49<br>8.38<br>16.155 T L 7<br>2X<br>3.504<br>2X<br>UE<br>1.016<br>5.080<br>aro<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 2 OF 2** ~~—~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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