MBRF30L45CTG

## Switch-mode Power Rectifier 45 V, 30 A 

## MBR30L45CTG, MBRF30L45CTG 

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## **Features and Benefits** 

- Low Forward Voltage 

- Low Power Loss/High Efficiency 

- High Surge Capacity 

**DUAL SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 45 VOLTS** 

- 150°C Operating Junction Temperature 

- 30 A Total (15 A Per Diode Leg) 

- Guard−Ring for Stress Protection 

## **Applications** 

- Power Supply − Output Rectification 

- Power Management 

- Instrumentation 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Weight (Approximately): 1.9 Grams 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

1 2, 4 3 ~~eae~~ **MARKING DIAGRAMS** 4 O ~~O~~ 

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AYWW<br>B30L45G<br>TO−220<br>A K A<br>CASE 221A<br>PLASTIC<br>1<br>2<br>3<br>**----- End of picture text -----**<br>


- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Shipped 50 Units Per Plastic Tube 

- This is a Pb−Free Device* 

## **MAXIMUM RATINGS** 

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TO−220<br>B30L45G<br>FULLPAK YWW<br>CASE 221D<br>**----- End of picture text -----**<br>


Please See the Table on the Following Page 

B30L45 = Device Code A = Assembly Location Y = Year WW = Work Week AKA = Polarity Designator G = Pb−Free Device 

## **ORDERING INFORMATION** 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

|**Device**|**Package**|**Shipping**|
|---|---|---|
|MBR30L45CTG|TO−220<br>(Pb−Free)|50 Units/Rail|
|MBRF30L45CTG|TO−220FP<br>(Pb−Free)|50 Units/Rail|



Publication Order Number: **MBR30L45CT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **May, 2024 − Rev. 5** 

## **MBR30L45CTG, MBRF30L45CTG** 

## **MAXIMUM RATINGS** (Per Diode Leg) 

|**MAXIMUM RATINGS**(Per Diode Leg)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|45|V|
|Average Rectified Forward Current<br>(Rated VR) TC= 137°C|IF(AV)|15|A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz)|IFRM|30|A|
|Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|190|A|
|Operating Junction Temperature (Note 1)|TJ|−55 to +150|°C|
|Storage Temperature|Tstg|�55 to +175|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|
|ESD Ratings:<br>Machine Model = C<br>Human Body Model = 3B||> 400<br>> 8000|V|
|**THERMAL CHARACTERISTICS**||||
|Maximum Thermal Resistance<br>(MBR30L45CTG)<br>Junction−to−Case<br>Junction−to−Ambient<br>(MBRF30L45CTG)<br>Junction−to−Case|R�JC<br>R�JA<br>R�JC|1.9<br>45<br>2.2|°C/W|
|**ELECTRICAL CHARACTERISTICS**(Per Diode Leg)||||
|Maximum Instantaneous Forward Voltage (Note 2)<br>(IF= 15 A, TC= 25°C)<br>(IF= 15 A, TC= 125°C)<br>(IF= 30 A, TC= 25°C)<br>(IF= 30 A, TC= 125°C)|vF|0.50<br>0.44<br>0.61<br>0.60|V|
|Maximum Instantaneous Reverse Current (Note 2)<br>(Rated DC Voltage, TC= 25°C)<br>(Rated DC Voltage, TC= 125°C)|iR|0.65<br>250|mA|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**MBR30L45CTG, MBRF30L45CTG** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>10 10<br>150 ° C 125 ° C 150 ° C 125 ° C<br>1 1<br>75 ° C 75 ° C<br>25 ° C 25 ° C<br>0.1 0.1<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM FORWARD VOLTAGE (V)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>1E+00 1E+00<br>150 ° C 150 ° C<br>1E−01 1E−01<br>125 ° C<br>125 ° C<br>1E−02 1E−02<br>75 ° C<br>1E−03 1E−03 75 ° C<br>1E−04 25 ° C 1E−04<br>25 ° C<br>1E−05 1E−05<br>0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>30<br>25 dc<br>20<br>Square Wave<br>15<br>10<br>5<br>0<br>100 105 110 115 120 125 130 135 140 145 150 155<br>TC, CASE TEMPERATURE ( ° C)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>IF IF<br>, REVERSE CURRENT (A) , REVERSE CURRENT (A)<br>IR IR<br>, AVERAGE FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating** 

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**3** 

**MBR30L45CTG, MBRF30L45CTG** 

## **TYPICAL CHARACTERISTICS** 

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28 10000<br>26<br>24 Square Wave<br>22<br>20<br>18<br>16<br>14 dc 1000<br>12<br>10<br>8<br>6<br>4<br>2<br>0 100<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 45<br>Io, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V)<br>Figure 6. Forward Power Dissipation Figure 7. Typical Capacitance<br>100<br>D = 0.5<br>10<br>0.2<br>0.1<br>0.05<br>1<br>0.01 P(pk)<br>0.1 t 1<br>t2<br>SINGLE PULSE DUTY CYCLE, D = t 1 /t 2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>Figure 8. Thermal Response Junction−to−Ambient for MBR30L45CTG<br>10<br>D = 0.5<br>1<br>0.2<br>0.1<br>0.05<br>P(pk)<br>0.1<br>0.01 t1<br>t 2<br>SINGLE PULSE DUTY CYCLE, D = t1/t2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>, AVERAGE POWER DISSIPATION (W)<br>PFO C, CAPACITANCE (pF)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 9. Thermal Response Junction−to−Case for MBR30L45CTG** 

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**4** 

**MBR30L45CTG, MBRF30L45CTG** 

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10<br>D = 0.5<br>1<br>0.2<br>0.1<br>0.05<br>0.1<br>0.01<br>P(pk)<br>0.01 t 1<br>SINGLE PULSE t2<br>DUTY CYCLE, D = t 1 /t 2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 10. Thermal Response Junction−to−Case for MBRF30L45CTG** 

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FULLPAK is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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TO−220−3 10.10x15.12x4.45, 2.54P<br>CASE 221A<br>ISSUE AL<br>DATE 05 FEB 2025<br>**----- End of picture text -----**<br>


|STYLE 1:||STYLE 2:|||STYLE 3:||STYLE 4:|||
|---|---|---|---|---|---|---|---|---|---|
|PIN 1.|BASE|PIN 1.|BASE||PIN 1.|CATHODE|PIN 1.|MAIN TERMINAL 1||
|2.|COLLECTOR|2.|EMITTER||2.|ANODE|2.|MAIN TERMINAL 2||
|3.|EMITTER|3.|COLLECTOR||3.|GATE|3.|GATE||
|4.|COLLECTOR|4.|EMITTER||4.|ANODE|4.|MAIN TERMINAL 2||
|STYLE 5:||STYLE 6:|||STYLE 7:||STYLE 8:|||
|PIN 1.|GATE|PIN 1.|ANODE||PIN 1.|CATHODE|PIN 1.|CATHODE||
|2.|DRAIN|2.|CATHODE||2.|ANODE|2.|ANODE||
|3.|SOURCE|3.|ANODE||3.|CATHODE|3.|EXTERNAL TRIP/DELAY||
|4.|DRAIN|4.|CATHODE||4.|ANODE|4.|ANODE||
|STYLE 9:||STYLE 10:|||STYLE 11:||STYLE 12:|||
|PIN 1.|GATE|PIN 1.|GATE||PIN 1.|DRAIN|PIN 1.|MAIN TERMINAL 1||
|2.|COLLECTOR|2.|SOURCE||2.|SOURCE|2.|MAIN TERMINAL 2||
|3.|EMITTER|3.|DRAIN||3.|GATE|3.|GATE||
|4.|COLLECTOR|4.|SOURCE||4.|SOURCE|4.|NOT CONNECTED||
|**DOCUMENT NUMBER:**|**98ASB42148B**|||Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.||||||
|**DESCRIPTION:**|**TO−220−3 10.10x15.12x4.45, 2.54P**||||||||**PAGE 1 OF 1**|



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© Semiconductor Components Industries, LLC, 1994 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−220 FULLPAK** CASE 221D−03 ISSUE K 

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DATE 27 FEB 2009<br>**----- End of picture text -----**<br>


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NOTES:<br>−T− SEATINGPLANE 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>−B− C 2. CONTROLLING DIMENSION: INCH<br>F 3. 221D-01 THRU 221D-02 OBSOLETE, NEW<br>S STANDARD 221D-03.<br>Q U INCHES MILLIMETERS<br>SCALE 1:1 DIM MIN MAX MIN MAX<br>A A 0.617 0.635 15.67 16.12<br>B 0.392 0.419 9.96 10.63<br>1 2 3 C 0.177 0.193 4.50 4.90<br>D 0.024 0.039 0.60 1.00<br>H F 0.116 0.129 2.95 3.28<br>−Y− G 0.100 BSC 2.54 BSC<br>K<br>H 0.118 0.135 3.00 3.43<br>J 0.018 0.025 0.45 0.63<br>K 0.503 0.541 12.78 13.73<br>G J L 0.048 0.058 1.23 1.47<br>N 0.200 BSC 5.08 BSC<br>N R Q 0.122 0.138 3.10 3.50<br>L R 0.099 0.117 2.51 2.96<br>S 0.092 0.113 2.34 2.87<br>D 3 PL U 0.239 0.271 6.06 6.88<br>0.25 (0.010) M B M Y<br>**----- End of picture text -----**<br>


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MARKING<br>DIAGRAMS<br>xxxxxxG AYWW<br>AYWW xxxxxxG<br>AKA<br>Bipolar Rectifier<br>xxxxxx = Specific Device Code A = Assembly Location<br>G = Pb−Free Package Y = Year<br>A = Assembly Location WW = Work Week<br>Y = Year xxxxxx = Device Code<br>WW = Work Week G = Pb−Free Package<br>AKA = Polarity Designator<br>**----- End of picture text -----**<br>


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STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. GATE PIN 1. BASE PIN 1. ANODE<br>2. DRAIN 2. COLLECTOR 2. CATHODE<br>3. SOURCE 3. EMITTER 3. ANODE<br>STYLE 4: STYLE 5: STYLE 6:<br>PIN 1. CATHODE PIN 1. CATHODE PIN 1. MT 1<br>2. ANODE  2. ANODE  2. MT 2<br>3. CATHODE  3. GATE  3. GATE<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42514B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220 FULLPAK PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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