MBRF30H100CTG

## Switch‐mode Power Rectifier 100 V, 30 A 

## MBR30H100CTG, MBRF30H100CTG 

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## **Features and Benefits** 

- Low Forward Voltage: 0.67 V @ 125°C 

- Low Power Loss/High Efficiency 

- High Surge Capacity 

- 175°C Operating Junction Temperature 

**SCHOTTKY BARRIER RECTIFIER 30 AMPERES 100 VOLTS** 

- 30 A Total (15 A Per Diode Leg) 

- These are Pb−Free Devices 

## **Applications** 

- Power Supply − Output Rectification 

- Power Management 

- Instrumentation 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Weight: 1.9 Grams (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- ESD Rating: Human Body Model = 3B Machine Model = C 

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1<br>2, 4<br>3 ke<br>MARKING<br>DIAGRAMS<br>Sy 4<br>TO−220<br>CASE 221A AYWW<br>STYLE 6 B30H100G<br>AKA<br>1 ' 2<br>3<br>Bb (2<br>TO−220 FULLPAK AYWW<br>CASE 221D B30H100G<br>AKA<br>1<br>2<br>, 3 TN<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>B30H100 = Device Code<br>G = Pb−Free Package<br>AKA = Polarity Designator<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 

Publication Order Number: **MBR30H100CT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **July, 2020 − Rev. 7** 

**MBR30H100CTG, MBRF30H100CTG** 

## **MAXIMUM RATINGS** (Per Diode Leg) 

|**MAXIMUM RATINGS**(Per Diode Leg)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|100|V|
|Average Rectified Forward Current<br>(TC= 156°C)<br>Per Diode<br>Per Device|IF(AV)|15<br>30|A|
|Peak Repetitive Forward Current<br>(Square Wave, 20 kHz, TC= 151°C)|IFM|30|A|
|Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|250|A|
|Operating Junction Temperature (Note 1)|TJ|+175|°C|
|Storage Temperature|Tstg|�65 to +175|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|
|Controlled Avalanche Energy (see test conditions in Figures 13 and 14)|WAVAL|200|mJ|
|ESD Ratings:<br>Machine Model = C<br>Human Body Model = 3B||> 400<br>> 8000|V|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Maximum Thermal Resistance<br>(MBR30H100CTG) − Junction-to-Case<br>− Junction-to-Ambient<br>(MBRF30H100CTG) − Junction-to-Case<br>− Junction-to-Ambient|R�JC<br>R�JA<br>R�JC<br>R�JA|2.0<br>60<br>4.2<br>75|°C/W|



## **ELECTRICAL CHARACTERISTICS** (Per Diode Leg) 

|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|
|Maximum Instantaneous Forward Voltage (Note 2)<br>(iF= 15 A, TJ= 25°C)<br>(iF= 15 A, TJ= 125°C)<br>(iF= 30 A, TJ= 25°C)<br>(iF= 30 A, TJ= 125°C)|vF|−<br>−<br>−<br>−|0.76<br>0.64<br>0.88<br>0.76|0.80<br>0.67<br>0.93<br>0.80|V|
|Maximum Instantaneous Reverse Current (Note 2)<br>(Rated DC Voltage, TJ= 125°C)<br>(Rated DC Voltage, TJ= 25°C)|iR|−<br>−|1.1<br>0.0008|6.0<br>0.0045|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device Order Number**|**Package Type**|**Shipping**†|
|MBR30H100CTG|TO−220<br>(Pb−Free)|50 Units / Rail|
|MBRF30H100CTG|TO−220FP<br>(Pb−Free)|50 Units / Rail|



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**2** 

**MBR30H100CTG, MBRF30H100CTG** 

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100 100<br>175°C 175°C<br>10 10<br>°<br>TJ = 150 C TJ = 150°C<br>1.0 125°C 1.0 125°C<br>25°C 25°C<br>0.1 0.1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)<br>i   , INSTANTANEOUS FORWARD CURRENT (AMPS)F i   , INSTANTANEOUS FORWARD CURRENT (AMPS)F<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

**Figure 2. Maximum Forward Voltage** 

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1E−01 1E−01<br>TJ = 150 ° C<br>1E−02 1E−02<br>TJ = 150 ° C<br>1E−03 1E−03 TJ = 125 ° C<br>TJ = 125 ° C<br>1E−04 1E−04<br>1E−05 1E−05<br>TJ = 25 ° C<br>1E−06 TJ = 25 ° C 1E−06<br>1E−07 1E−07<br>1E−08 1E−08<br>0 20 40 60 80 100 0 20 40 60 80 100<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>26 26<br>24 dc 24 RATED VOLTAGE APPLIED<br>22 22  R�JA = 16° C/W<br>20 20  R �JA  = 60° C/W<br>18 SQUARE WAVE 18 (NO HEATSINK)<br>16 16<br>14 14<br>12 12 dc<br>10 10<br>SQUARE WAVE<br>8.0 8.0<br>6.0 6.0<br>dc<br>4.0 4.0<br>2.0 2.0<br>0 0<br>130 135 140 145 150 155 160 165 170 175 180 0 25 50 75 100 125 150 175<br>TC, CASE TEMPERATURE (C°) TA, AMBIENT TEMPERATURE (°C)<br>, REVERSE CURRENT (AMPS)<br>IR<br>, MAXIMUM REVERSE CURRENT (AMPS)<br>IR<br>I           , AVERAGE FORWARD CURRENT (AMPS)F (AV) I           , AVERAGE FORWARD CURRENT (AMPS)F (AV)<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating, Case Per Leg** 

**Figure 6. Current Derating, Ambient Per Leg** 

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**3** 

**MBR30H100CTG, MBRF30H100CTG** 

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30 10000<br>2826 TJ = 175°C TJ = 25 ° C<br>SQUARE WAVE<br>24<br>22<br>20 1000<br>18<br>16 dc<br>14<br>12<br>10 100<br>8<br>6<br>4<br>2<br>0 10<br>0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 20 40 60 80 100<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 7. Forward Power Dissipation Figure 8. Capacitance<br>100<br>D = 0.5<br>10<br>0.2<br>0.1<br>0.05<br>1<br>0.01 P(pk)<br>0.1 t 1<br>t2<br>SINGLE PULSE DUTY CYCLE, D = t 1 /t 2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>Figure 9. Thermal Response Junction−to−Ambient for MBR30H100CT<br>10<br>D = 0.5<br>1<br>0.2<br>0.1<br>0.05<br>P(pk)<br>0.1<br>0.01 t1<br>t 2<br>SINGLE PULSE DUTY CYCLE, D = t1/t2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>C, CAPACITANCE (pF)<br>P         , AVERAGE FORWARD POWER DISSIPATION (WATTS)F (AV)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 10. Thermal Response Junction−to−Case for MBR30H100CT** 

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**4** 

**MBR30H100CTG, MBRF30H100CTG** 

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10<br>D = 0.5<br>0.2<br>1.0<br>0.1<br>0.05<br>0.02<br>0.1 P(pk) Z�JC(t) = r(t) R�JC<br>0.01 R�JC = 1.6°C/W MAX<br>D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN<br>0.01 SINGLE PULSE t1 t2 READ TIME AT t1<br>DUTY CYCLE, D = t 1 /t 2 TJ(pk) - TC = P(pk) Z�JC(t)<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t1, TIME (sec)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 11. Thermal Response Junction−to−Case for MBRF30H100CT** 

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100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1.0<br>0.01<br>P (pk) Z�JC(t) = r(t) R�JC<br>0.1 R�JC = 1.6°C/W MAX<br>D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN<br>0.01 SINGLE PULSE t1 t2 READ TIME AT t1<br>DUTY CYCLE, D = t1/t2 T J(pk)  - T C  = P (pk)  Z� JC (t)<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t1, TIME (sec)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 12. Thermal Response Junction−to−Ambient for MBRF30H100CT** 

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**5** 

**MBR30H100CTG, MBRF30H100CTG** 

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+VDD<br>IL 10 mH COIL<br>VD<br>MERCURY ID<br>SWITCH<br>DUT<br>S1<br>**----- End of picture text -----**<br>


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BVDUT<br>IL ID<br>VDD<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**Figure 13. Test Circuit** 

**Figure 14. Current−Voltage Waveforms** 

The unclamped inductive switching circuit shown in Figure 13 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. 

When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. 

By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive 

elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). 

## **EQUATION (1):** 

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## **EQUATION (2):** 

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FULLPAK is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A ISSUE AK 

DATE 13 JAN 2022 

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STYLE 1: STYLE 2: STYLE 3: STYLE 4:<br>PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2<br>3. EMITTER 3. COLLECTOR 3. GATE 3. GATE<br>4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2<br>STYLE 5: STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br>2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY<br>4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12:<br>PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2<br>3. EMITTER 3. DRAIN 3. GATE 3. GATE<br>4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42148B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220 PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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MECHANICAL CASE OUTLINE<br>PACKAGE DIMENSIONS<br>TO−220 FULLPAK<br>CASE 221D−03<br>ISSUE K<br>S DATE 27 FEB 2009<br>NOTES:<br>−T− SEATINGPLANE 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>−B− C 2. CONTROLLING DIMENSION: INCH<br>F 3. 221D-01 THRU 221D-02 OBSOLETE, NEW<br>S STANDARD 221D-03.<br>Q U INCHES MILLIMETERS<br>SCALE 1:1 DIM MIN MAX MIN MAX<br>A A 0.617 0.635 15.67 16.12<br>B 0.392 0.419 9.96 10.63<br>1 2 3 C 0.177 0.193 4.50 4.90<br>D 0.024 0.039 0.60 1.00<br>a H n ==So= F 0.116 0.129 2.95 3.28<br>−Y− G 0.100 BSC 2.54 BSC<br>K<br>H 0.118 0.135 3.00 3.43<br>J 0.018 0.025 0.45 0.63<br>hd ay : —<br>|| oe === K 0.503 0.541 12.78 13.73<br>G J L 0.048 0.058 1.23 1.47<br>N 0.200 BSC 5.08 BSC<br>N R Q 0.122 0.138 3.10 3.50<br>_ L R 0.099 0.117 2.51 2.96<br>S 0.092 0.113 2.34 2.87<br>D 3 PL U 0.239 0.271 6.06 6.88<br>0.25 (0.010) M B M Y<br>MARKING<br>DIAGRAMS<br>STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. GATE PIN 1. BASE PIN 1. ANODE<br>2. DRAIN 2. COLLECTOR 2. CATHODE<br>3. SOURCE 3. EMITTER 3. ANODE<br>Qo Qo<br>STYLE 4: STYLE 5: STYLE 6: xxxxxxG AYWW<br>PIN 1. CATHODE PIN 1. CATHODE PIN 1. MT 1 AYWW xxxxxxG<br>2.3. ANODECATHODE  2. 3. ANODEGATE  2. 3. MT 2GATE AKA<br>tr | ot<br>Bipolar Rectifier<br>xxxxxx = Specific Device Code A = Assembly Location<br>G = Pb−Free Package Y = Year<br>A = Assembly Location WW = Work Week<br>Y = Year xxxxxx = Device Code<br>WW = Work Week G = Pb−Free Package<br>AKA = Polarity Designator<br>**----- End of picture text -----**<br>


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