MBRF20L60CTG

## Switch-mode Power Rectifier 60 V, 20 A 

## MBR20L60CTG MBRF20L60CTG 

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## **Features and Benefits** 

- Low Power Loss/High Efficiency 

- High Surge Capacity 

- 20 A Total (10 A Per Diode Leg) 

- Guard−Ring for Stress Protection 

**SCHOTTKY BARRIER RECTIFIER 20 AMPERES 60 VOLTS** 

- These Devices are Pb−Free and are RoHS Compliant* 

## **Applications** 

- Power Supply − Output Rectification 

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- Power Management 

- Instrumentation 

**MARKING DIAGRAM** 

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4 DIAGRAM<br>Mechanical Characteristics:<br>• Case: Epoxy, Molded<br>• Epoxy Meets UL 94 V−0 @ 0.125 in<br>=<br>• Weight: 1.9 Grams (Approximately) TO−220<br>CASE 221A AYWW<br>• Finish: All External Surfaces Corrosion Resistant and Terminal<br>STYLE 6 B20L60G<br>Leads are Readily Solderable AKA<br>1<br>• Lead Temperature for Soldering Purposes: 2 3<br>260°C Max. for 10 Seconds<br>**----- End of picture text -----**<br>


- Shipped 50 Units Per Plastic Tube 

S ~~Foy~~ AYWW **TO−220 FULLPAK** B20L60G **CASE 221D** AKA 1 ~~_~~ 2 3 

A = Assembly Location Y = Year WW = Work Week B20L60 = Device Code G = Pb−Free Package AKA = Polarity Designator 

## **ORDERING INFORMATION** 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

|**Device**|**Package**|**Shipping**|
|---|---|---|
|MBR20L60CTG|TO−220<br>(Pb−Free)|50 Units / Rail|
|MBRF20L60CTG|TO−220FP<br>(Pb−Free)|50 Units / Rail|



Publication Order Number: **MBR20L60CT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **July, 20120− Rev. 4** 

**MBR20L60CTG MBRF20L60CTG** 

## **MAXIMUM RATINGS** (Per Diode Leg) 

|**MAXIMUM RATINGS**(Per Diode Leg)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|60|V|
|Average Rectified Forward Current<br>MBR20L60CT (Rated VR) TC= 138°C<br>Per Diode<br>MBRF20L60CT (Rated VR) TC= 123°C<br>Per Device|IF(AV)|10<br>20|A|
|Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|240|A|
|Operating Junction Temperature (Note 1)|TJ|−55 to +150|°C|
|Storage Temperature|Tstg|�65 to +175|°C|
|ESD Ratings:<br>Machine Model = C<br>Human Body Model = 3B||> 400<br>> 8000|V|
|Maximum Repetitive Peak Avalanche Voltage<br>(tp< 1�s, TJ< 150°C, IAR< 51 A)|VARM|85|V|
|Maximum Single−Pulse Peak Avalanche Voltage<br>(tp< 1�s, TJ< 150°C, IAR< 51 A)|VASM|85|V|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Maximum Thermal Resistance<br>MBR20L60CTG<br>− Junction−to−Case<br>− Junction−to−Ambient<br>MBRF20L60CTG<br>− Junction−to−Case<br>− Junction−to−Ambient|R�JC<br>R�JA<br>R�JC<br>R�JA|2.3<br>70<br>5.2<br>75|°C/W|



## **ELECTRICAL CHARACTERISTICS** (Per Diode Leg) 

|**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|
|Maximum Instantaneous Forward Voltage (Note 2)<br>(IF= 10 A, TC= 25°C)<br>(IF= 10 A, TC= 125°C)<br>(IF= 20 A, TC= 25°C)<br>(IF= 20 A, TC= 125°C)|vF|0.53<br>0.49<br>0.68<br>0.64|0.57<br>0.54<br>0.73<br>0.69|V|
|Maximum Instantaneous Reverse Current (Note 2)<br>(Rated DC Voltage, TC= 25°C)<br>(Rated DC Voltage, TC= 125°C)|iR|118<br>52|380<br>96|�A<br>mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**MBR20L60CTG MBRF20L60CTG** 

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100 100<br>125 ° C<br>10 125 ° C 10<br>85 ° C<br>150 ° C 85 ° C 150 ° C<br>1 1<br>TJ = 25 ° C<br>TJ = 25 ° C<br>0.1 0.1<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>1.0E+00 1.0E+00<br>1.0E−01 150 ° C 1.0E−01 150 ° C<br>125 ° C 125 ° C<br>1.0E−02 1.0E−02 85 ° C<br>85 ° C<br>1.0E−03 1.0E−03<br>1.0E−04 TJ = 25 ° C 1.0E−04 TJ = 25 ° C<br>1.0E−05 1.0E−05<br>1.0E−06 1.0E−06<br>0 10 20 30 40 50 60 0 10 20 30 40 50 60<br>VR, REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>20 6<br>18 R � JC = 2.3 ° C/W R � JA = 70 ° C/W<br>dc<br>5<br>16<br>dc<br>14<br>4<br>12<br>10 3<br>SQUARE WAVE<br>8 SQUARE WAVE<br>2<br>6<br>4<br>1<br>2<br>0 0<br>110 115 120 125 130 135 140 145 150 155 160 0 20 40 60 80 100 120 140 160<br>TC, CASE TEMPERATURE ( ° C) TA, AMBIENT TEMPERATURE ( ° C)<br>Figure 5. Current Derating, Case per Leg Figure 6. Current Derating, Ambient per Leg<br>MBR20L60CT MBR20L60CT<br>(A) (A)<br>, AVERAGE FORWARD CURRENTIF , AVERAGE FORWARD CURRENTIF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>(A) (A)<br>, AVERAGE FORWARD CURRENTIF , AVERAGE FORWARD CURRENTIF<br>**----- End of picture text -----**<br>


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**3** 

**MBR20L60CTG MBRF20L60CTG** 

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20 6<br>18 R � JC = 5.2 ° C/W R � JA = 75 ° C/W<br>dc 5<br>16<br>14<br>4<br>dc<br>12<br>10 3<br>SQUARE WAVE<br>8<br>2<br>6 SQUARE WAVE<br>4<br>1<br>2<br>0 0<br>80 90 100 110 120 130 140 150 160 0 20 40 60 80 100 120 140 160<br>TC, CASE TEMPERATURE ( ° C) TA, AMBIENT TEMPERATURE ( ° C)<br>Figure 7. Current Derating, Case per Leg Figure 8. Current Derating, Ambient per Leg<br>MBRF20L60CT MBRF20L60CT<br>18 10000<br>16 TJ = 150 ° C TJ = 25 ° C<br>14<br>12 SQUARE WAVE 1000<br>10<br>8<br>dc<br>6 100<br>4<br>2<br>0 10<br>0 2 4 6 8 10 12 14 16 18 20 0 10 20 30 40 50 60<br>IO, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V)<br>(A) (A)<br>, AVERAGE FORWARD CURRENTIF , AVERAGE FORWARD CURRENTIF<br>C, CAPACITANCE (pF)<br>, AVERAGE POWER DISSIPATION (W)<br>FO<br>P<br>**----- End of picture text -----**<br>


**Figure 9. Forward Power Dissipation** 

**Figure 10. Capacitance** 

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10<br>D = 0.5<br>1<br>0.2<br>0.1<br>0.05 P(pk)<br>0.1 0.01 t 1<br>t2<br>SINGLE PULSE<br>DUTY CYCLE, D = t 1 /t 2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 11. Thermal Response Junction−to−Case, per Leg for MBR20L60CT** 

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**4** 

**MBR20L60CTG MBRF20L60CTG** 

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100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1<br>0.01<br>0.1<br>SINGLE PULSE<br>0.01<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>Figure 12. Thermal Response Junction−to−Ambient, per Leg for MBR20L60CT<br>10<br>D = 0.5<br>0.2<br>1<br>0.1<br>0.05<br>0.02<br>0.1<br>0.01<br>SINGLE PULSE<br>0.01<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>Figure 13. Thermal Response Junction−to−Case, per Leg for MBRF20L60CT<br>100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1<br>0.01<br>0.1<br>SINGLE PULSE<br>0.01<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>R(t), TRANSIENT THERMAL RESISTANCE<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 14. Thermal Response Junction−to−Ambient, per Leg for MBRF20L60CT** 

FULLPAK is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A ISSUE AK 

DATE 13 JAN 2022 

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SCALE 1:1<br>**----- End of picture text -----**<br>


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STYLE 1: STYLE 2: STYLE 3: STYLE 4:<br>PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2<br>3. EMITTER 3. COLLECTOR 3. GATE 3. GATE<br>4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2<br>STYLE 5: STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br>2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY<br>4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12:<br>PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2<br>3. EMITTER 3. DRAIN 3. GATE 3. GATE<br>4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42148B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220 PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

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MECHANICAL CASE OUTLINE<br>PACKAGE DIMENSIONS<br>TO−220 FULLPAK<br>CASE 221D−03<br>ISSUE K<br>S DATE 27 FEB 2009<br>NOTES:<br>−T− SEATINGPLANE 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>−B− C 2. CONTROLLING DIMENSION: INCH<br>F 3. 221D-01 THRU 221D-02 OBSOLETE, NEW<br>S STANDARD 221D-03.<br>Q U INCHES MILLIMETERS<br>SCALE 1:1 DIM MIN MAX MIN MAX<br>A A 0.617 0.635 15.67 16.12<br>B 0.392 0.419 9.96 10.63<br>1 2 3 C 0.177 0.193 4.50 4.90<br>D 0.024 0.039 0.60 1.00<br>a H n ==So= F 0.116 0.129 2.95 3.28<br>−Y− G 0.100 BSC 2.54 BSC<br>K<br>H 0.118 0.135 3.00 3.43<br>J 0.018 0.025 0.45 0.63<br>hd ay : —<br>|| oe === K 0.503 0.541 12.78 13.73<br>G J L 0.048 0.058 1.23 1.47<br>N 0.200 BSC 5.08 BSC<br>N R Q 0.122 0.138 3.10 3.50<br>_ L R 0.099 0.117 2.51 2.96<br>S 0.092 0.113 2.34 2.87<br>D 3 PL U 0.239 0.271 6.06 6.88<br>0.25 (0.010) M B M Y<br>MARKING<br>DIAGRAMS<br>STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. GATE PIN 1. BASE PIN 1. ANODE<br>2. DRAIN 2. COLLECTOR 2. CATHODE<br>3. SOURCE 3. EMITTER 3. ANODE<br>Qo Qo<br>STYLE 4: STYLE 5: STYLE 6: xxxxxxG AYWW<br>PIN 1. CATHODE PIN 1. CATHODE PIN 1. MT 1 AYWW xxxxxxG<br>2.3. ANODECATHODE  2. 3. ANODEGATE  2. 3. MT 2GATE AKA<br>tr | ot<br>Bipolar Rectifier<br>xxxxxx = Specific Device Code A = Assembly Location<br>G = Pb−Free Package Y = Year<br>A = Assembly Location WW = Work Week<br>Y = Year xxxxxx = Device Code<br>WW = Work Week G = Pb−Free Package<br>AKA = Polarity Designator<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42514B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−220 FULLPAK PAGE 1 OF 1** ~~ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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