MBRF20H150CTG
Schottky Rectifier, 150 V, 20 A, Dual Common Cathode, TO-220FP, 3 Pins, 870 mV
- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:150V; Forward Current If(AV):20A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-220FP; No. of P; Available until stocks are exhausted
- SVHC: Lead (23-Jan-2024)
- No. of Pins: 3Pins
- Product Range: MBRF2
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: TO-220FP
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 870mV
- Forward Surge Current: 180A
- Average Forward Current: 20A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 150V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.04 € |
| Current stock | 200+ |
| Lead time | 30 days |
## MBRF20H150CTG, MBR20H150CTG ## Switch-mode Power Rectifier 150 V, 20 A **www.onsemi.com** ## **Features and Benefits** - Low Forward Voltage - Low Power Loss/High Efficiency - High Surge Capability ## **SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 150 VOLTS** - 20 A Total (10 A Per Diode Leg) - Guard−Ring for Stress Protection - These Devices are Pb−Free and are RoHS Compliant ## **Applications** - Power Supply − Output Rectification - Power Management - Instrumentation ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Epoxy Meets UL 94 V−0 @ 0.125 in - Weight (Approximately): 1.9 Grams (TO−220 & TO−220FP) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds **==> picture [154 x 422] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>2, 4<br>3 “as<br>4<br>1 2 1 i 2<br>3 3<br>TO−220 FULLPAK TO−220<br>CASE 221AH CASE 221A<br>STYLE 6<br>MARKING DIAGRAMS<br>ro u se AYWW<br>AYWW B20H150G<br>B20H150G AKA<br>AKA<br>TT<br>TO−220 TO−220FP<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>B20H150 = Device Code<br>G = Pb−Free Device<br>AKA = Polarity Designator<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 1 of this data sheet. Publication Order Number: **MBRF20H150CT/D** **1** © Semiconductor Components Industries, LLC, 2016 **July, 2016 − Rev. 4** **MBRF20H150CTG, MBR20H150CTG** ## **MAXIMUM RATINGS** (Per Diode Leg) |**MAXIMUM RATINGS**(Per Diode Leg)|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|150|V| |Average Rectified Forward Current<br>(Per Leg)<br>(Rated VR) TC= 134°C<br>(Per Device)|IF(AV)|10<br>20|A| |Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|180|A| |Operating Junction Temperature (Note 1)|TJ|−20 to +150|°C| |Storage Temperature|Tstg|−65 to +150|°C| |Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s| |ESD Ratings:<br>Machine Model = C<br>Human Body Model = 3B||> 400<br>> 8000|V| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Maximum Thermal Resistance<br>(MBR20H150CTG)<br>− Junction−to−Case<br>− Junction−to−Ambient<br>(MBRF20H150CTG)<br>− Junction−to−Case|R�JC<br>R�JA<br>R�JC|2.0<br>45<br>2.5|°C/W| ## **ELECTRICAL CHARACTERISTICS** (Per Diode Leg) |**ELECTRICAL CHARACTERISTICS**(Per Diode Leg)||||| |---|---|---|---|---| |**Rating**|**Symbol**|**Typ**|**Max**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 2)<br>(IF= 5 A, TC= 25°C)<br>(IF= 5 A, TC= 125°C)<br>(IF= 10 A, TC= 25°C)<br>(IF= 10 A, TC= 125°C)|vF|0.72<br>0.57<br>0.87<br>0.65|0.60<br>0.68|V| |Maximum Instantaneous Reverse Current (Note 2)<br>(Rated DC Voltage, TC= 25°C)<br>(Rated DC Voltage, TC= 125°C)|iR||50<br>30|�A<br>mA| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device Order Number**|**Package Type**|**Shipping**| |MBRF20H150CTG|TO−220FP<br>(Pb−Free)|50 Units / Rail| |MBR20H150CTG|TO−220<br>(Pb−Free)|50 Units / Rail| **www.onsemi.com** **2** **MBRF20H150CTG, MBR20H150CTG** **==> picture [495 x 625] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>TJ = 125 ° C TJ = 100 ° C TJ = 125 ° C TJ = 100 ° C<br>TJ = 25 ° C TJ = 25 ° C<br>10 10<br>1 1<br>0.1 0.1<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>1.0E−02 1.0E−01<br>TJ = 125 ° C TJ = 125 ° C<br>1.0E−03 1.0E−02<br>1.0E−04 TJ = 100 ° C 1.0E−03 TJ = 100 ° C<br>1.0E−05 1.0E−04<br>TJ = 25 ° C<br>1.0E−06 1.0E−05 TJ = 25 ° C<br>1.0E−07 1.0E−06<br>0 10 20 30 40 50 60 70 80 90 100110120130140150 0 10 20 30 40 50 60 70 80 90 100110120130140150<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>18 18<br>16 dc 16 TJ = 150 ° C<br>14 14<br>SQUARE<br>12 SQUARE WAVE 12<br>10 10<br>8 8 dc<br>6 6<br>4 4<br>2 2<br>0 0<br>110 115 120 125 130 135 140 145 150 155 0 2 4 6 8 10 12 14 16 18 20<br>TC, CASE TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (AMPS)<br>, INSTANTANEOUS FORWARD CURRENT (A) , INSTANTANEOUS FORWARD CURRENT (A)<br>IF IF<br>, REVERSE CURRENT (A) , REVERSE CURRENT (A)<br>IR IR<br>(WATTS)<br>, AVERAGE POWER DISSIPATION<br>FO<br>P<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF<br>**----- End of picture text -----**<br> **Figure 5. Current Derating** **Figure 6. Forward Power Dissipation** **www.onsemi.com** **3** **MBRF20H150CTG, MBR20H150CTG** **==> picture [490 x 631] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>TJ = 25 ° C<br>100<br>10<br>0 50 100 150<br>VR, REVERSE VOLTAGE (V)<br>Figure 7. Capacitance<br>100<br>D = 0.5<br>10<br>0.2<br>0.1<br>0.05<br>1<br>0.01 P(pk)<br>0.1 t 1<br>t2<br>SINGLE PULSE DUTY CYCLE, D = t 1 /t 2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>Figure 8. Thermal Response Junction−to−Ambient for MBR20H150CTG<br>10<br>D = 0.5<br>1<br>0.2<br>0.1<br>0.05<br>P(pk)<br>0.1<br>0.01 t1<br>t 2<br>SINGLE PULSE DUTY CYCLE, D = t1/t2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>C, CAPACITANCE (pF)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **Figure 9. Thermal Response Junction−to−Case for MBR20H150CTG** **www.onsemi.com** **4** **MBRF20H150CTG, MBR20H150CTG** 0 **==> picture [490 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>D = 0.5<br>1<br>0.2<br>0.1<br>0.05<br>0.1<br>0.01<br>P(pk)<br>0.01 t 1<br>SINGLE PULSE t2<br>DUTY CYCLE, D = t 1 /t 2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **Figure 10. Thermal Response Junction−to−Case for MBRF20H150CTG** **www.onsemi.com** **5** **MBRF20H150CTG, MBR20H150CTG** ## **PACKAGE DIMENSIONS** **TO−220** CASE 221A−09 ISSUE AH NOTES: **==> picture [234 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> SEATING<br>−T− PLANE<br>B F C<br>T S<br>4<br>Q A<br>1 2 3 U<br>H<br>K<br>Z<br>L R<br>V J<br>G<br>D<br>N<br>**----- End of picture text -----**<br> 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. |**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**| |---|---|---|---|---| ||**MIN**<br>|**MAX**<br>|**MIN**<br>|**MAX**<br>| |**A**|0.570|0.620|14.48|15.75| |**B**|0380|0415|966|1053| |**C**|.<br>0.160|.<br>0.190|.<br>4.07|.<br>4.83| |**D**|0.025|0.038|0.64|0.96| |**F**|0.142|0.161|3.61|4.09| |**G**|0.095|0.105|2.42|2.66| |**H**|0.110|0.161|2.80|4.10| |**J**|0.014|0.024|0.36|0.61| |**K**|0.500|0.562|12.70|14.27| |**L**|0.045|0.060|1.15|1.52| |**N**|0.190|0.210|4.83|5.33| |**Q**|0100|0120|254|304| |**R**|.<br>0.080|.<br>0.110|.<br>2.04|.<br>2.79| |**S**|0.045|0.055|1.15|1.39| |**T**|0.235|0.255|5.97|6.47| |**U**|0.000|0.050|0.00|1.27| |**V**|0.045|---|1.15|---| |**Z**|---|0.080|---|2.04| |STYLE<br>PIN|6:<br>1.<br>ANODE<br>2.<br>CATHODE<br>3.<br>ANODE<br>4.<br>CATHODE|||| **www.onsemi.com** **6** **MBRF20H150CTG, MBR20H150CTG** ## **PACKAGE DIMENSIONS** **TO−220 FULLPACK, 3−LEAD** CASE 221AH ISSUE F **==> picture [455 x 348] intentionally omitted <==** **----- Start of picture text -----**<br> A B SEATINGPLANE NOTES:1. DIMENSIONING AND TOLERANCING PER ASME<br>E Y14.5M, 1994.<br>E/2 P A 2. CONTROLLING DIMENSION: MILLIMETERS.<br>0.14 M B A M H1 A1 3.4. CONTOUR UNCONTROLLED IN THIS AREA.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE<br>PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO<br>EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE<br>Q MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.<br>D C 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.<br>LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.<br>1 2 3 NOTE 3 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY<br>MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1<br>AND H1 FOR MANUFACTURING PURPOSES.<br>L L1 MILLIMETERS<br>DIM MIN MAX<br>A 4.30 4.70<br>1 A1 2.50 2.90<br>3X b c A2 2.50 2.90<br>3X ae b2 0.25 M B A M C i A2 b2b 0.541.10 0.841.40<br>c 0.49 0.79<br>e 7 H. _ SIDE VIEW . D 14.70 15.30<br>FRONT VIEW E 9.70 10.30<br>e 2.54 BSC<br>H1 6.60 7.10<br>L 12.50 14.73<br>L1 --- 2.80<br>P 3.00 3.40<br>SECTION D−D Boren : Q 2.80 3.20<br>A<br>NOTE 6<br>NOTE 6<br>H1<br>D D<br>A SECTION A−A<br>ALTERNATE CONSTRUCTION<br>**----- End of picture text -----**<br> FULLPAK is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : **www.onsemi.com** **MBRF20H150CT/D** **7**
Updated at June 4, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →