MBRD835LT4G

## MBRD835L, SBRD8835L 

## Switch-mode Power Rectifier **DPAK Surface Mount Package** 

This switch−mode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. 

## **Features** 

**www.onsemi.com SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS** 

- Low Forward Voltage 

- 150°C Operating Junction Temperature 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Compact Size 

**DPAK** 

**CASE 369C** 

- Lead Formed for Surface Mount 

• SBRD8 Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements; AEC−Q101 4 3 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant **MARKING DIAGRAM Mechanical Characteristics** YWW • Case: Epoxy, Molded B 835LG • Weight: 0.4 Gram (Approximately) ~~7~~ • Finish: All External Surfaces Corrosion Resistant and Terminal B835LG = Specific Device Number Leads are Readily Solderable Y = Year WW = Work Week • Lead and Mounting Surface Temperature for Soldering Purposes: G = Pb−Free Device 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Shipped 75 Units Per Plastic Tube 

## **ORDERING INFORMATION** 

- ESD Rating: 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MBRD835LG|DPAK<br>(Pb−Free)|75 Units / Rail|
|SBRD8835LG|DPAK<br>(Pb−Free)|75 Units / Rail|
|SBRD8835LG−VF01|DPAK<br>(Pb−Free)|75 Units / Rail|
|MBRD835LT4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|SBRD835LT4G−VF01|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|SBRD8835LT4G|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|SBRD8835LT4G−VF01|DPAK<br>(Pb−Free)|2,500 /<br>Tape & Reel|



- ♦ Machine Model = C (> 400 V) 

- ♦ Human Body Model = 3B (> 8000 V) 

- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **MBRD835L/D** 

**1** 

© Semiconductor Components Industries, LLC, 2012 **April, 2017 − Rev. 12** 

**MBRD835L, SBRD8835L** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|35|V|
|Average Rectified Forward Current<br>(At Rated VR, TC= 88°C)|IF(AV)|8.0|A|
|Peak Repetitive Forward Current<br>(At Rated VR, Square Wave, 20 kHz, TC= 80°C)|IFRM|16|A|
|Non−Repetitive Peak Surge Current<br>(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)|IFSM|75|A|
|Repetitive Avalanche Current<br>(Current Decaying Linearly to Zero in 1�s, Frequency Limited by TJmax)|IAR|2.0|A|
|Storage / Operating Case Temperature|Tstg|−65 to +150|°C|
|Operating Junction Temperature (Note 1)|TJ|−65 to +150|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance − Junction−to−Case|R�JC|2.8|°C/W|
|Thermal Resistance − Junction−to−Ambient (Note 2)|R�JA|80|°C/W|



2. Rating applies when surface mounted on the minimum pad size recommended. 

## **ELECTRICAL CHARACTERISTICS** 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Maximum Instantaneous Forward Voltage (Note 3)<br>(iF= 8 Amps, TC= +25°C)<br>(iF= 8 Amps, TC= +125°C)|VF|0.51<br>0.41|V|
|Maximum Instantaneous Reverse Current (Note 3)<br>(Rated dc Voltage, TC= +25°C)<br>(Rated dc Voltage, TC= +100°C)|IR|1.4<br>35|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

3. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2%. 

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**2** 

**MBRD835L, SBRD8835L** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [238 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>TJ = 125 ° C 25 ° C<br>1<br>0.1<br>0.01<br>0 0.1 0.2 0.3 0.4 0.5 0.6<br>vF, INSTANTANEOUS VOLTAGE (VOLTS)<br>iF, INSTANTANEOUS FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 1. Maximum Forward Voltage** 

**==> picture [237 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100 TJ = 125 ° C<br>10 100°C<br>1<br>25°C<br>0.1<br>0.01<br>0.001<br>0 5 10 15 20 25 30 35<br>VF, REVERSE VOLTAGE (VOLTS)<br>IR, REVERSE CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 3. Maximum Reverse Current** 

**==> picture [238 x 371] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>T J  = 125°C<br>1<br>75°C<br>0.1<br>25°C<br>0.01<br>0 0.1 0.2 0.3 0.4 0.5 0.6<br>VF, INSTANTANEOUS VOLTAGE (VOLTS)<br>Figure 2. Typical Forward Voltage<br>100<br>TJ = 125°C<br>100°C<br>10<br>1 75°C<br>0.1<br>25°C<br>0.01<br>0 5 10 15 20 25 30 35<br>VR, REVERSE VOLTAGE (VOLTS)<br>IF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>IR, REVERSE CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 4. Typical Reverse Current** 

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**MBRD835L, SBRD8835L** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [234 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
TJ = 25°C TYPICAL<br>MAXIMUM<br>1000<br>100<br>1 10<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Maximum and Typical Capacitance** 

**==> picture [239 x 395] intentionally omitted <==**

**----- Start of picture text -----**<br>
16<br>14.4 T J  = 125°C<br>12.8 R�JA = 6°C/W<br>dc<br>11.2 � (RESISTIVE LOAD)<br>9.6 SQUARE WAVE<br>IPK � 5 [(CAPACITIVE]<br>8 I AV LOAD)<br>6.4<br>4.8<br>10<br>3.2<br>1.6 20<br>0<br>80 85 90 95 100 105 110 115 120 125 130<br>TC, CASE TEMPERATURE (°C)<br>Figure 6. Current Derating, Infinite Heatsink<br>5<br>4.5 dc TJ = 125°C R�JA = 80°C/W<br>SURFACE MOUNTED ON<br>4<br>� MINIMUM RECOMMENDED<br>3.5 (RESISTIVE LOAD) PAD SIZE<br>3 SQUARE WAVE IPK � 5 [(CAPACITIVE]<br>2.5 IAV LOAD)<br>2<br>1.5<br>10<br>1<br>0.5 20<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110 120 130<br>TA, AMBIENT TEMPERATURE (°C)<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>**----- End of picture text -----**<br>


**Figure 8. Current Derating, Free Air** 

**==> picture [240 x 397] intentionally omitted <==**

**----- Start of picture text -----**<br>
8<br>TJ = 125°C R�JA = 40°C/W<br>7 dc<br>SURFACE MOUNTED ON<br>6 MINIMUM RECOMMENDED<br>PAD SIZE<br>5 �  (RESISTIVE LOAD)<br>SQUARE WAVE IPK � 5 [(CAPACITIVE]<br>4 IAV LOAD)<br>3<br>10<br>2<br>1<br>20<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110 120 130<br>TA, AMBIENT TEMPERATURE (°C)<br>Figure 7. Current Derating<br>8<br>TJ = 125°C<br>7 � (RESISTIVE LOAD)<br>6 IPK � 5 [(][CAPACITIVE] SQUARE WAVE dc<br>IAV LOAD)<br>5<br>10<br>4<br>20<br>3<br>2<br>1<br>0<br>0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br>


**Figure 9. Forward Power Dissipation** 

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**MBRD835L, SBRD8835L** 

## **PACKAGE DIMENSIONS** 

**DPAK (SINGLE GAUGE)** CASE 369C ISSUE F 

- NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

**==> picture [481 x 409] intentionally omitted <==**

**----- Start of picture text -----**<br>
A 1. DIMENSIONING AND TOLERANCING PER ASME<br>Y14.5M, 1994.<br>E C 2. CONTROLLING DIMENSION: INCHES.<br>A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.<br>FLASH, PROTRUSIONS, OR BURRS. MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS SHALL<br>4 NOT EXCEED 0.006 INCHES PER SIDE.<br>L3 bale Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE<br>D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.<br>1 2 3 PLANE H.<br>7. OPTIONAL MOLD FEATURE.<br>L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX<br>b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38<br>e SIDE VIEW A1 0.000 0.005 0.00 0.13<br>b b 0.025 0.035 0.63 0.89<br>TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46<br>c 0.018 0.024 0.46 0.61<br>c2 0.018 0.024 0.46 0.61<br>H Z Z D 0.235 0.245 5.97 6.22<br>E 0.250 0.265 6.35 6.73<br>e 0.090 BSC 2.29 BSC<br>L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41<br>L 0.055 0.070 1.40 1.78<br>L1 0.114 REF 2.90 REF<br>L2 0.020 BSC 0.51 BSC<br>L L3 0.035 0.050 0.89 1.27<br>A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01<br>wet L1 s So CONSTRUCTIONS h ALTERNATE Gh Z 0.155 −−− 3.93 −−−<br>DETAIL A<br>ROTATED 9  CW SOLDERING FOOTPRINT*<br>6.20 3.00<br>0.244 0.118<br>2.58<br>0.102<br>5.80<br>1.60 6.17<br>0.228<br>0.063 0.243<br>Te<br>SCALE 3:1 mm<br>inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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