MBR40L60CTG
Standard Recovery Diode, 60 V, 40 A, Dual Common Cathode, 810 mV, 240 A
- Manufacturer: ONSEMI
- Product type: Standard Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:60V; Forward Current If(AV):40A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:810mV; Reverse Recovery Time trr Max:-; Forward Surg
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Diode Case Style: TO-220
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 810mV
- Forward Surge Current: 240A
- Reverse Recovery Time: -
- Average Forward Current: 40A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 60V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.741 € |
| Current stock | 100+ |
| Lead time | 30 days |
## MBR40L60CTG ## Switch-mode Power Rectifier 60 V, 40 A ## **Features and Benefits** **www.onsemi.com** - Low Forward Voltage - Low Power Loss/High Efficiency - High Surge Capability - 40 A Total (20 A Per Diode Leg) - Guard−Ring for Stress Protection - This Device is Pb−Free and is RoHS Compliant ## **Applications** - Power Supply − Output Rectification - Power Management - Instrumentation ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Epoxy Meets UL 94 V−0 @ 0.125 in - Weight (Approximately): 1.9 Grams - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ## **SCHOTTKY BARRIER RECTIFIER 40 AMPERES, 60 VOLTS** **==> picture [111 x 385] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>2, 4<br>3 ar<br>4<br>1 i<br>2<br>3<br>TO−220<br>CASE 221A<br>STYLE 6<br>MARKING DIAGRAM<br>0.<br>AYWW<br>B40L60G<br>AKA<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>B40L60 = Device Code<br>G = Pb−Free Device<br>AKA = Polarity Designator<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: **MBR40L60CT/D** **1** © Semiconductor Components Industries, LLC, 2015 **January, 2015 − Rev. 1** **MBR40L60CTG** ## **MAXIMUM RATINGS** (Per Diode Leg) |**MAXIMUM RATINGS**(Per Diode Leg)|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|60|V| |Average Rectified Forward Current<br>(Per Leg)<br>(Rated VR) TC= 130°C<br>(Per Device)|IF(AV)|20<br>40|A| |Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|240|A| |Operating Junction Temperature (Note 1)|TJ|−55 to +150|°C| |Storage Temperature|Tstg|−65 to +175|°C| |ESD Ratings:<br>Machine Model = C<br>Human Body Model = 3B||> 400<br>> 8000|V| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Thermal Resistance<br>Junction−to−Case<br>Junction−to−Ambient|R�JC<br>R�JA|1.8<br>70|°C/W| ## **ELECTRICAL CHARACTERISTICS** (Per Diode Leg) |**ELECTRICAL CHARACTERISTICS**(Per Diode Leg)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 2)<br>(IF= 20 A, TC= 25°C)<br>(IF= 20 A, TC= 125°C)<br>(IF= 40 A, TC= 25°C)<br>(IF= 40 A, TC= 125°C)|vF|0.56<br>0.53<br>0.75<br>0.69|0.61<br>0.58<br>0.81<br>0.74|V| |Maximum Instantaneous Reverse Current (Note 2)<br>(Rated DC Voltage, TC= 25°C)<br>(Rated DC Voltage, TC= 125°C)|iR|210<br>95|550<br>175|�A<br>mA| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. ## **DEVICE ORDERING INFORMATION** |**DEVICE ORDERING INFORMATION**||| |---|---|---| |**Device Order Number**|**Package Type**|**Shipping**| |MBR40L60CTG|TO−220<br>(Pb−Free)|50 Units / Rail| **www.onsemi.com** **2** **MBR40L60CTG** **==> picture [494 x 580] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>125 ° C<br>125 ° C<br>10 10<br>150 ° C 150 ° C 85 ° C<br>85 ° C<br>1 1<br>TJ = 25 ° C<br>TJ = 25 ° C<br>0.1 0.1<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>1.0E+00 1.0E+00<br>150 ° C<br>1.0E−01 150 ° C 1.0E−01 125 ° C<br>125 ° C<br>1.0E−02 1.0E−02 85 ° C<br>1.0E−03 85 ° C 1.0E−03<br>1.0E−04 1.0E−04 TJ = 25 ° C<br>TJ = 25 ° C<br>1.0E−05 1.0E−05<br>1.0E−06 1.0E−06<br>0 10 20 30 40 50 60 0 10 20 30 40 50 60<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>36 6<br>32 dc R � JC = 1.8 ° C/W R � JA = 70 ° C/W<br>5<br>28 dc<br>24 SQUARE WAVE 4<br>20<br>3<br>16 SQUARE WAVE<br>12 2<br>8<br>1<br>4<br>0 0<br>80 90 100 110 120 130 140 150 0 20 40 60 80 100 120 140 160<br>TC, CASE TEMPERATURE ( ° C) TA, AMBIENT TEMPERATURE ( ° C)<br>(A)<br>CURRENT (A)<br>, INSTANTANEOUS FORWARD<br>IF , AVERAGE FORWARD CURRENT<br>IF<br>, REVERSE CURRENT (A) , REVERSE CURRENT (A)<br>IR IR<br>(A) (A)<br>, AVERAGE FORWARD CURRENTIF , AVERAGE FORWARD CURRENTIF<br>**----- End of picture text -----**<br> **Figure 5. Current Derating, Case per Leg** **Figure 6. Current Derating, Ambient per Leg** **www.onsemi.com** **3** **MBR40L60CTG** **==> picture [494 x 609] intentionally omitted <==** **----- Start of picture text -----**<br> 40 10000<br>TJ = 150 ° C TJ = 25 ° C<br>35<br>30<br>1000<br>25<br>SQUARE WAVE<br>20<br>15<br>dc 100<br>10<br>5<br>0 10<br>0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60<br>IO, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V)<br>Figure 7. Forward Power Dissipation Figure 8. Capacitance<br>10<br>D = 0.5<br>1<br>0.2<br>0.1<br>0.05<br>0.1 P(pk)<br>0.01 t1<br>t 2<br>SINGLE PULSE<br>DUTY CYCLE, D = t 1 /t 2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>Figure 9. Thermal Response Junction−to−Case for MBR40L60CT<br>100<br>D = 0.5<br>0.2<br>10<br>0.1<br>0.02 0.05<br>1<br>0.01<br>0.1<br>SINGLE PULSE<br>0.01<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C, CAPACITANCE (pF)<br>, AVERAGE POWER DISSIPATION (W)<br>F<br>P<br>R(t), TRANSIENT THERMAL RESISTANCE<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **Figure 10. Thermal Response Junction−to−Ambient for MBR40L60CT** **www.onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **TO−220** CASE 221A ISSUE AK DATE 13 JAN 2022 **==> picture [34 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> SCALE 1:1<br>**----- End of picture text -----**<br> **==> picture [338 x 122] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1: STYLE 2: STYLE 3: STYLE 4:<br>PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2<br>3. EMITTER 3. COLLECTOR 3. GATE 3. GATE<br>4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2<br>STYLE 5: STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br>2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY<br>4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12:<br>PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2<br>3. EMITTER 3. DRAIN 3. GATE 3. GATE<br>4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED<br>**----- End of picture text -----**<br> **==> picture [492 x 37] intentionally omitted <==** **----- Start of picture text -----**<br> Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42148B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220 PAGE 1 OF 1<br>**----- End of picture text -----**<br> **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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Updated at April 22, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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