MB10S
Bridge Rectifier, Single Phase, 1 kV, 800 mA, SOIC, 4 Pins, 1 V
- Manufacturer: ONSEMI
- Product type: Bridge Rectifier Diodes
- No. of Phases:Single Phase; Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):800mA; Bridge Rectifier Case Style:SOIC; Forward Voltage VF Max:1V; No. of Pins:4Pins; Ope
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- No. of Phases: Single Phase
- Product Range: MB10S
- Forward Voltage Max: 1V
- Forward Surge Current: 35A
- Average Forward Current: 800mA
- Bridge Rectifier Mounting: Surface Mount
- Operating Temperature Max: 150°C
- Bridge Rectifier Case Style: SOIC
- Repetitive Peak Reverse Voltage: 1kV
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.229 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## Bridge Rectifiers, 0.5 A ## MB10S ## **Description** The MB family of bridge rectifiers is a 0.5 A rectifier family that achieves high surge current absorption within a very small foot print. Within its small 35 mm[2] form factor, the MB family shines in its surge capability. In order to absorb high surge currents, the design supports a 35 A IFSM rating and a 5.0 A[2] Sec I[2] T rating. Devices in the family are also rated to breakdown voltages of up to 1000 V. These features make the MB family ideal for small power supplies that need a little extra surge capability. **www.onsemi.com** ## **Features** - Low−Leakage - Surge Overload Rating: 35 A peak **==> picture [50 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> SOIC4 W<br>CASE 751EP<br>**----- End of picture text -----**<br> - Ideal for Printed Circuit Board - UL Certified: UL #E258596 **MARKING DIAGRAM** - This Device is Pb−Free and RoHS Compliant 2 1 − + $Y&Z&3 MB10S 4 ~~:~~ 3 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3−Digit Data Code (Year & Week) MB10S = Specific Device Code ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2010 **September, 2019 − Rev. 2** **MB10S/D** **MB10S** ## **ABSOLUTE MAXIMUM RATINGS** (Values are at TA = 25 ° C unless otherwise noted) |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VRRM|Maximum Repetitive Reverse Voltage|1000|V| |VRMS|Maximum RMS Bridge Input Voltage|700|V| |VR|DC Reverse Voltage (Rated VR)|1000|V| |IF(AV)|Average Rectified Forward Current at TA= 50°C<br>On Glass−Epoxy PCB<br>On Aluminum Substrate|0.5<br>0.8|A| |IFSM|Non−Repetitive Peak Forward Surge Current:<br>8.3 ms Single Half−Sine−Wave|35|A| |TSTG|Storage Temperature Range|−55 to +150|°C| |TJ|Operating Junction Temperature Range|−55 to +150|�C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |PD|Power Dissipation|1.4|W| |RθJA|Thermal Resistance, Junction to Ambient, per Leg (Note 1)|85|°C/W| |RθJL|Thermal Resistance, Junction to Lead, per Leg (Note 1)|20|°C/W| 1. Device mounted on PCB with 0.5 × 0.5 inch (13 × 13 mm) lead length. **ELECTRICAL CHARACTERISTICS** (Values are at TA = 25 ° C unless otherwise noted) |**ELECTRICAL**|**CHARACTERISTICS**(Values are at|TA= 25°C unless otherwise noted)||| |---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**|**Value**|**Unit**| |VF|Maximum Forward Voltage, per Diode|IF= 0.5 A|1.0|V| |IR|Maximum Reverse Current, per Diode<br>at Rated VR|TA= 25°C|5.0|�A| |||TA= 125°C|0.5|mA| |I2t|I2t Rating for Fusing|t < 8.3 ms|5.0|A2s| |CT|Typical Capacitance, per Diode|VR= 4.0 V, f = 1.0 MHz|13|pF| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Part Number**|**Marking**|**Package**|**Shipping**†| |MB10S|MB10S|SOIC4 W<br>(Pb−Free)|3,000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **2** **MB10S** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [213 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8<br>0.7<br>Aluminum Substrate<br>0.6<br>0.5<br>0.4 Glass<br>Epoxy<br>0.3 P.C.B<br>0.2<br>0.1 Resistive or Inductive Load<br>0<br>0 20 40 60 80 100 120 140 160<br>Ambient Temperature ( � C)<br>Current (A)<br>Average Forward Rectified<br>**----- End of picture text -----**<br> **Figure 1. Derating Curve for Output Rectified Current** **==> picture [207 x 369] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>Tj = 40 ° C<br>30 Single Half Sine−Wave<br>(JEDEC Method)<br>25<br>20 F = 50 Hz<br>F = 60 Hz<br>15<br>10<br>5 1 Cycle<br>0<br>1 10 100<br>Number of Cycles<br>Figure 3. Maximum Non−Repetitive Peak Forward<br>Surge Current Per Leg<br>10<br>Tj = 25 ° C<br>1<br>0.1<br>Tj = 25 ° C<br>Pulse Width = 300 � s<br>1% Duty Cycles<br>0.01<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>Instantaneous Forward Voltage (V)<br>Peak Forward Surge Current (A)<br>Instantaneous Forward Current (A)<br>**----- End of picture text -----**<br> **Figure 3. Maximum Non−Repetitive Peak Forward Surge Current Per Leg** **==> picture [218 x 374] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10 Tj = 125 ° C<br>1<br>0.1<br>Tj = 25 ° C<br>0.01<br>0 20 40 60 80 100<br>Percent of Rated Peak Reverse Voltage (%)<br>Figure 2. Typical Reverse Leakage Characteristics<br>Per Leg<br>30<br>Tj = 25 ° C<br>25 f = 1 MHz<br>Vslg = 50 mVp−p<br>20<br>15<br>10<br>5<br>0<br>0.1 1 10 100 200<br>Reverse Voltage (V)<br>A)<br>�<br>Leakage Current (<br>Instantaneous Reverse<br>Junction Capacitance (pF)<br>**----- End of picture text -----**<br> **Figure 2. Typical Reverse Leakage Characteristics Per Leg** **Figure 4. Typical Junction Capacitance Per Leg** **Figure 5. Typical Forward Voltage Characteristics Per Leg** **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [290 x 388] intentionally omitted <==** **----- Start of picture text -----**<br> SOIC4 W<br>CASE 751EP<br>ISSUE O<br>4.95<br>4.50<br>2.70<br>2.20 ‘ 0.13 S|@! C [| B A |<br>[|] [|]<br>qo<br>4) Lt 3 OPTION B- NO BEVEL<br>4.20 6.407.00HALF MOON (CRESCENT)<br>3.60 OPTION A - BEVEL<br>a ae<br>LB 1 C_]|_| CT | 2<br>0.73 wh 0. 4384<br>| 0.13 | C | A f B<br>2.70<br>08<br>0.10 C<br>I A L [4 NOTES: UNLESS<br>**----- End of picture text -----**<br> **==> picture [80 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> DATE 30 SEP 2016<br>**----- End of picture text -----**<br> ## **DOCUMENT NUMBER: 98AON13753G** **DESCRIPTION: SOIC4 W** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 4, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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