MAC97A8G..
Triac, 800 V, 600 mA, TO-92, 2.5 V, 8 A, 10 mA
- Manufacturer: ONSEMI
- Product type:
- Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current IT(rms):600mA; Triac Case Style:TO-92; Gate Trigger Current Max (QI), Igt:5mA; Gate Trigger Voltage Max Vgt:2.5V; Peak Gate Pow
- No. of Pins: 3Pins
- Product Range: -
- Triac Case Style: TO-92
- Thyristor Mounting: Through Hole
- Holding Current Max: 10mA
- On State RMS Current: 600mA
- Peak On State Voltage: 1.9V
- Gate Trigger Voltage Max: 2.5V
- Operating Temperature Max: 110°C
- Peak Non Repetitive Surge Current: 8A
- Peak Repetitive Off State Voltage: 800V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.084 € |
| Current stock | 10+ |
| Lead time | 30 days |
## MAC97 Series ## Sensitive Gate Triacs **Silicon Bidirectional Thyristors** Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO−92 package which is readily adaptable for use in automatic insertion equipment. ## **Features** - One−Piece, Injection−Molded Package - Blocking Voltage to 600 Volts - Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives - All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability ## **http://onsemi.com** **TRIACS 0.8 AMPERE RMS 200 thru 600 VOLTS** MT2 MT1 — ~~=~~ G - These are Pb−Free Devices* **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) |**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)|C unless otherwise noted)|| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Off-State Voltage<br>(TJ= −40 to +110°C) (Note 1)<br>Sine Wave 50 to 60 Hz, Gate Open<br>MAC97A4<br>MAC97A6<br>MAC97A8<br>~~FL~~<br>~~ee~~|VDRM,<br>VRRM<br>~~FL~~<br>~~ee~~|200<br>400<br>600<br>~~FL~~<br>~~ee~~|V<br>~~FL~~<br>~~ee~~| |On-State RMS Current<br>Full Cycle Sine Wave 50 to 60 Hz<br>(TC= +50°C)<br>~~ee~~|IT(RMS)<br>~~ee~~|0.6<br>~~ee~~|A<br>~~ee~~| |Peak Non−Repetitive Surge Current<br>One Full Cycle, Sine Wave 60 Hz<br>(TC= 110°C)<br>~~ee~~|ITSM<br>~~ee~~|8.0<br>~~ee~~|A<br>~~ee~~| |Circuit Fusing Considerations (t = 8.3 ms)<br>~~a~~<br>~~oe~~<br>~~|~~|I2t<br>~~a~~|0.26<br>~~a~~|A2s<br>~~a~~| |Peak Gate Voltage<br>(t<br>2.0 s, TC= +80°C)<br>~~oe~~<br>~~|~~<br>~~oe~~<br>~~|~~|VGM|5.0|V| |Peak Gate Power<br>(t<br>2.0 s, TC= +80°C)<br>~~oe~~<br>~~|~~<br>~~oe~~<br>~~|~~|PGM|5.0|W| |Average Gate Power<br>(TC= 80°C, t<br>8.3 ms)<br>~~oe~~<br>~~|~~<br>~~ee~~<br>~~Pe~~|PG(AV)<br>~~ee~~|0.1<br>~~ee~~|W<br>~~ee~~| |Peak Gate Current<br>(t<br>2.0 s, TC= +80°C)<br>~~Pe~~|IGM|1.0|A| |Operating Junction Temperature Range<br>~~Pe~~<br>~~a~~|TJ<br>~~a~~|−40 to +110<br>~~a~~|°C<br>~~a~~| |Storage Temperature Range<br>~~Pe~~<br>~~I~~|Tstg<br>~~I~~|−40 to +150<br>~~I~~|°C<br>~~I~~| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. **==> picture [181 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> MARKING<br>DIAGRAM<br>MAC<br>1 97Ax<br>2<br>1 23 3 AYWW<br>STRAIGHT LEAD BENT LEAD C1<br>BULK PACK TAPE & REEL<br>AMMO PACK<br>TO−92 (TO−226)<br>CASE 029 nt<br>STYLE 12<br>MAC97Ax = Device Code<br>x = 4, 6, or 8<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br> (Note: Microdot may be in either location) **PIN ASSIGNMENT** 1 Main Terminal 1 2 Gate 3 Main Terminal 2 ~~Sp~~ ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2013 **August, 2013 − Rev. 10** **MAC97/D** **MAC97 Series** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Max**|||**Unit**| |Thermal Resistance, Junction−to−Case|R�JC|75|||°C/W| |Thermal Resistance, Junction−to−Ambient|R�JA|200|||°C/W| |Maximum Lead Temperature for Soldering Purposes for 10 Seconds|TL|260|||°C| |**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted; Electricals apply in both directions)|||||| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Peak Repetitive Blocking Current<br>(VD= Rated VDRM, VRRM; Gate Open)<br>TJ= 25°C<br>TJ= +110°C|IDRM, IRRM|−<br>−|−<br>−|10<br>100|�A<br>�A| |**ON CHARACTERISTICS**|||||| |Peak On−State Voltage<br>(ITM=�.85 A Peak; Pulse Width�2.0 ms, Duty Cycle�2.0%)|VTM|−|−|1.9|V| |Gate Trigger Current (Continuous dc)<br>(VD= 12 Vdc, RL= 100�)<br>MT2(+), G(+)<br>MT2(+), G(−)<br>MT2(−), G(−)<br>MT2(−), G(+)|IGT|−<br>−<br>−<br>−|−<br>−<br>−<br>−|5.0<br>5.0<br>5.0<br>7.0|mA| |Gate Trigger Voltage (Continuous dc)<br>(VD= 12 Vdc, RL= 100�)<br>MT2(+), G(+) All Types<br>MT2(+), G(−) All Types<br>MT2(−), G(−) All Types<br>MT2(−), G(+) All Types|VGT|−<br>−<br>−<br>−|.66<br>.77<br>.84<br>.88|2.0<br>2.0<br>2.0<br>2.5|V| |Gate Non−Trigger Voltage<br>(VD= 12 V, RL= 100�, TJ= 110°C)<br>All Four Quadrants|VGD|0.1|−|−|V| |Holding Current<br>(VD= 12 Vdc, Initiating Current = 200 mA, Gate Open)|IH|−|1.5|10|mA| |Turn-On Time<br>(VD= Rated VDRM, ITM= 1.0 A pk, IG= 25 mA)|tgt|−|2.0|−|�s| |**DYNAMIC CHARACTERISTICS**|||||| |Critical Rate−of−Rise of Commutation Voltage<br>(VD= Rated VDRM, ITM= .84 A,<br>Commutating di/dt = .3 A/ms, Gate Unenergized, TC= 50°C)|dV/dt(c)|−|5.0|−|V/�s| |Critical Rate of Rise of Off−State Voltage<br>(VD= Rated VDRM, TC= 110°C, Gate Open, Exponential Waveform|dv/dt|−|25|−|V/�s| **http://onsemi.com** **2** **MAC97 Series** ## **Voltage Current Characteristic of Triacs (Bidirectional Device)** **==> picture [35 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> + Current<br>**----- End of picture text -----**<br> |**Symbol**|**Parameter**| |---|---| |VDRM|Peak Repetitive Forward Off State Voltage| |IDRM|Peak Forward Blocking Current| |VRRM|Peak Repetitive Reverse Off State Voltage| |IRRM|Peak Reverse Blocking Current| |VTM|<br>Maximum On State Voltage| |IH|Holding Current| **==> picture [248 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> Quadrant 1<br>MainTerminal 2 +<br>VTM<br>on state<br>IH<br>IRRM at VRRM<br>off state + Voltage<br>IH IDRM at VDRM<br>Quadrant 3<br>VTM<br>MainTerminal 2 −<br>**----- End of picture text -----**<br> ## **Quadrant Definitions for a Triac** **==> picture [349 x 338] intentionally omitted <==** **----- Start of picture text -----**<br> MT2 POSITIVE<br>(Positive Half Cycle)<br>+<br>(+) MT2 (+) MT2<br>Quadrant II (−) IGT (+) IGT Quadrant I<br>GATE GATE<br>MT1 MT1<br>REF REF<br>IGT − + IGT<br>(−) MT2 (−) MT2<br>Quadrant III (−) IGT (+) IGT Quadrant IV<br>GATE GATE<br>MT1 MT1<br>REF REF<br>−<br>MT2 NEGATIVE<br>(Negative Half Cycle)<br>**----- End of picture text -----**<br> All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. **http://onsemi.com** **3** **MAC97 Series** **==> picture [488 x 594] intentionally omitted <==** **----- Start of picture text -----**<br> 110 110<br>100 � = 30° 100 � = 30°<br>90 DC 60° 90° 8090 DC 60° 90°<br>80<br>180° 70 180°<br>70 120° 120°<br>60<br>60<br>� 50 �<br>50<br>� 40 �<br>40 30<br>� = CONDUCTION ANGLE � = CONDUCTION ANGLE<br>30 20<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4<br>IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS)<br>Figure 1. RMS Current Derating Figure 2. RMS Current Derating<br>1.2 6.0<br>1.0 � 4.0<br>� 180° DC TJ = 110°C<br>0.8<br>� = CONDUCTION ANGLE 120° 2.0 25°C<br>0.6<br>1.0<br>0.4<br>90°<br>60 ° 0.6<br>0.2<br>� = 30°<br>0.4<br>0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>IT(RMS), RMS ON-STATE CURRENT (AMPS)<br>0.2<br>Figure 3. Power Dissipation<br>0.1<br>0.06<br>0.04<br>0.02<br>0.01<br>0.006<br>0.4 1.2 2.0 2.8 3.6 4.4 5.2 6.0<br>VTM, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)<br>°<br>°<br>, MAXIMUM ALLOWABLE<br>IT(RMS) AMBIENT TEMPERATURE ( C)<br>C<br>T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)<br>(AV)<br>P , MAXIMUM AVERAGE POWER DISSIPATION (WATTS)<br>ITM, INSTANTANEOUS ON‐STATE CURRENT (AMP)<br>**----- End of picture text -----**<br> **Figure 4. On−State Characteristics** **http://onsemi.com** **4** **MAC97 Series** **==> picture [241 x 377] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>Z� JC(t) = R� JC(t) � r(t)<br>0.1<br>0.01<br>0.1 1.0 10 100 1�10 [3] 1�10 [4]<br>t, TIME (ms)<br>Figure 5. Transient Thermal Response<br>100<br>Q4<br>10<br>Q3<br>Q2<br>Q1<br>1<br>0<br>-40 -25 -10 5 20 35 50 65 80 95 110<br>TJ, JUNCTION TEMPERATURE (°C)<br>(t)<br>R , TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>, GATE TRIGGER CURRENT (mA)<br>IGT<br>**----- End of picture text -----**<br> **Figure 7. Typical Gate Trigger Current versus Junction Temperature** **==> picture [235 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10 Q2<br>Q4 Q3<br>1<br>Q1<br>0<br>-40 -25 -10 5 20 35 50 65 80 95 110<br>TJ, JUNCTION TEMPERATURE (°C)<br>, LATCHING CURRENT (mA)<br>IL<br>**----- End of picture text -----**<br> **Figure 9. Typical Latching Current versus Junction Temperature** **==> picture [236 x 377] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>5.0<br>3.0<br>TJ = 110°C<br>2.0<br>f = 60 Hz<br>CYCLE<br>Surge is preceded and followed by rated current.<br>1.0<br>1.0 2.0 3.0 5.0 10 30 50 100<br>NUMBER OF CYCLES<br>Figure 6. Maximum Allowable Surge Current<br>1.2<br>1.1 Q4<br>1.0 Q3<br>Q2<br>0.9<br>0.8 Q1<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>-40 -25 -10 5 20 35 50 65 80 95 110<br>TJ, JUNCTION TEMPERATURE (°C)<br>TSM<br>I , PEAK SURGE CURRENT (AMPS)<br>, GATE TRIGGER VOLTAGE (V)<br>GT<br>V<br>**----- End of picture text -----**<br> **Figure 8. Typical Gate Trigger Voltage versus Junction Temperature** **==> picture [236 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>MT2 Negative<br>1<br>MT2 Positive<br>0.1<br>-40 -25 -10 5 20 35 50 65 80 95 110<br>TJ, JUNCTION TEMPERATURE (°C)<br>, HOLDING CURRENT (mA)<br>HI<br>**----- End of picture text -----**<br> **Figure 10. Typical Holding Current versus Junction Temperature** **http://onsemi.com** **5** **MAC97 Series** **==> picture [402 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> LL 1N4007<br>200 VRMS<br>ADJUST FOR MEASURE<br>ITM, 60 Hz VAC I RS<br>CHARGE<br>TRIGGER CONTROL -<br>CHARGE 200 V<br>CS ADJUST FOR +<br>MT2 dV/dt(c)<br>1N914 51 �<br>NON‐POLAR MT1<br>G<br>CL<br>TRIGGER CONTROL<br>**----- End of picture text -----**<br> Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. **Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dV/dt)c** ## **ORDERING & SHIPPING INFORMATION** |**U.S.**|**Europe**<br>**Equivalent**|**Shipping**|**Description of TO92 Tape Orientation**| |---|---|---|---| ||MAC97A6RL1G|Radial Tape & Reel (2K/Reel)<br>(Pb−Free)|Flat side of TO92 & adhesive tape visible| |MAC97A8RLRMG|MAC97A8RL1G|Radial Tape & Reel (2K/Reel)<br>(Pb−Free)|Flat side of TO92 & adhesive tape visible| |MAC97A4G||Bulk in Box (5K/Box)<br>(Pb−Free)|N/A, Bulk| |MAC97A6G||Bulk in Box (5K/Box)<br>(Pb−Free)|N/A, Bulk| |MAC97A8G||Bulk in Box (5K/Box)<br>(Pb−Free)|N/A, Bulk| |MAC97A4RLRFG||Radial Tape & Reel (2K/Reel)<br>(Pb−Free)|Round side of TO92 & adhesive tape on reverse side| |MAC97A4RLRPG||Radial Tape & Reel (2K/Reel)<br>(Pb−Free)|Round side of TO92 & adhesive tape on reverse side| |MAC97A6RLRFG||Radial Tape & Reel (2K/Reel)<br>(Pb−Free)|Round side of TO92 & adhesive tape on reverse side| |MAC97A6RLRPG||Radial Tape & Reel (2K/Reel)<br>(Pb−Free)|Round side of TO92 & adhesive tape on reverse side| |MAC97A8RLRPG||Radial Tape / Fan Fold Box (2K/Box)<br>(Pb−Free)|Round side of TO92 & adhesive tape visible| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **http://onsemi.com** **6** **MAC97 Series** ## **TO−92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL** **==> picture [336 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> H2A H2A<br>H2B H2B<br>H<br>W2<br>H4 H5 T1<br>L1<br>H1<br>W1 W<br>L T<br>F1 T2<br>F2<br>P2 P2 D<br>P1<br>P<br>**----- End of picture text -----**<br> **Figure 12. Device Positioning on Tape** |**Symbol**|**Item**|**Specification**|**Specification**|**Specification**|**Specification**| |---|---|---|---|---|---| |||**Inches**||**Millimeter**|| |||**Min**|**Max**|**Min**|**Max**| |D|Tape Feedhole Diameter|0.1496|0.1653|3.8|4.2| |D2|Component Lead Thickness Dimension|0.015|0.020|0.38|0.51| |F1, F2|Component Lead Pitch|0.0945|0.110|2.4|2.8| |H|Bottom of Component to Seating Plane|.059|0.156|1.5|4.0| |H1|Feedhole Location|0.3346|0.3741|8.5|9.5| |H2A|Deflection Left or Right|0|0.039|0|1.0| |H2B|Deflection Front or Rear|0|0.051|0|1.0| |H4|Feedhole to Bottom of Component|0.7086|0.768|18|19.5| |H5|Feedhole to Seating Plane|0.610|0.649|15.5|16.5| |L|Defective Unit Clipped Dimension|0.3346|0.433|8.5|11| |L1|Lead Wire Enclosure|0.09842|−|2.5|−| |P|Feedhole Pitch|0.4921|0.5079|12.5|12.9| |P1|Feedhole Center to Center Lead|0.2342|0.2658|5.95|6.75| |P2|First Lead Spacing Dimension|0.1397|0.1556|3.55|3.95| |T|Adhesive Tape Thickness|0.06|0.08|0.15|0.20| |T1|Overall Taped Package Thickness|−|0.0567|−|1.44| |T2|Carrier Strip Thickness|0.014|0.027|0.35|0.65| |W|Carrier Strip Width|0.6889|0.7481|17.5|19| |W1|Adhesive Tape Width|0.2165|0.2841|5.5|6.3| |W2|Adhesive Tape Position|0.0059|0.01968|0.15|0.5| NOTES: 2. Maximum alignment deviation between leads not to be greater than 0.2 mm. 3. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. 4. Component lead to tape adhesion must meet the pull test requirements. 5. Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 6. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 7. No more than 1 consecutive missing component is permitted. 8. A tape trailer and leader, having at least three feed holes is required before the first and after the last component. 9. Splices will not interfere with the sprocket feed holes. **http://onsemi.com** **7** **MAC97 Series** ## **PACKAGE DIMENSIONS** **TO−92 (TO−226)** CASE 29−11 ISSUE AM **==> picture [378 x 397] intentionally omitted <==** **----- Start of picture text -----**<br> A NOTES:<br>B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI<br>BULK PACK Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R<br>“BE IS UNCONTROLLED.<br>4. LEAD DIMENSION IS UNCONTROLLED IN P AND<br>P BEYOND DIMENSION K MINIMUM.<br>L<br>SEATING INCHES MILLIMETERS<br>PLANE K DIM MIN MAX MIN MAX<br>A 0.175 0.205 4.45 5.20<br>B 0.170 0.210 4.32 5.33<br>C 0.125 0.165 3.18 4.19<br>D 0.016 0.021 0.407 0.533<br>X = X D SSEEE G 0.045 0.055 1.15 1.39<br>G H 0.095 0.105 2.42 2.66<br>J 0.015 0.020 0.39 0.50<br>Fr H J ——— K 0.500 --- 12.70 ---<br>L 0.250 --- 6.35 ---<br>V C N 0.080 0.105 2.04 2.66<br>P --- 0.100 --- 2.54<br>SECTION X−X R 0.115 --- 2.93 ---<br>1 N V 0.135 --- 3.43 ---<br>N STYLE 12:<br>ome a PIN 1. MAIN TERMINAL 1<br>2. GATE<br>3. MAIN TERMINAL 2<br>R A B BENT LEAD NOTES:1. DIMENSIONING AND TOLERANCING PER<br>TAPE & REEL ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>AMMO PACK 3. CONTOUR OF PACKAGE BEYOND<br>DIMENSION R IS UNCONTROLLED.<br>4. LEAD DIMENSION IS UNCONTROLLED IN P<br>P AND BEYOND DIMENSION K MINIMUM.<br>T<br>MILLIMETERS<br>SEATING<br>PLANE K DIM MIN MAX<br>A 4.45 5.20<br>B 4.32 5.33<br>C 3.18 4.19<br>D 0.40 0.54<br>i X X D G 2.40 2.80<br>G KJ 12.700.39 0.50---<br>J N 2.04 2.66<br>m ae V C “ RP 1.502.93 4.00---<br>He| | 4 = V 3.43 ---<br>SECTION X−X<br>1 N<br>on<br>**----- End of picture text -----**<br> 3. CONTOUR OF PACKAGE BEYOND DIMENSION R **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **ON Semiconductor Website** : **www.onsemi.com** **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative **http://onsemi.com** **MAC97/D** **8**
Updated at April 17, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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