MA3075WALT1G

## MA3075WALT1G, SZMA3075WALT1G 

## Zener ESD Protection Diode 

## **SOT−23 Dual Common Anode Zeners for ESD Protection** 

These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. 

## **Features** 

- SOT−23 Package Allows Two Separate Unidirectional Configurations 

- Low Leakage < 1 A @ 5.0 V 

- Breakdown Voltage: 7.2−7.9 V @ 5 mA 

- Low Capacitance (80 pF typical @ 0 V, 1 MHz) 

- ESD Protection Meeting: 16 kV Human Body Model 

ESD Protection Meeting: 30 kV Air and Contact Discharge 

- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Mechanical Characteristics:** 

- Void Free, Transfer−Molded, Thermosetting Plastic Case 

- Corrosion Resistant Finish, Easily Solderable 

- Package Designed for Optimal Automated Board Assembly 

- Small Package Size for High Density Applications 

**MAXIMUM RATINGS** 

**Rating Symbol Value Unit** ~~a~~ Peak Power Dissipation @ 100 s (Note 1) Ppk 15 W Steady State Power Dissipation ° PD ° 225 ° mW ° Derate above 25 ° C (Note 2) 1.8 mW/ ° C Thermal Resistance, Junction−to−Ambient R JA 556 ° C/W Maximum Junction Temperature R JA 417 ° C/W Operating Junction and Storage TJ, Tstg −55 to +150 ° C Temperature Range ~~eeee ee~~ ESD Discharge VPP kV ~~eT~~ MIL STD 883C − Method 3015−6 16 IEC61000−4−2, Air Discharge 30 ~~FE~~ IEC61000−4−2, Contact Discharge 30 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**www.onsemi.com** 

**==> picture [113 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>3<br>2<br>ae<br>PIN 1. CATHODE<br>2. CATHODE<br>3. ANODE<br>1<br>**----- End of picture text -----**<br>


**SOT−23 CASE 318 STYLE 12** 

**==> picture [90 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
MARKING DIAGRAM<br>**----- End of picture text -----**<br>


**==> picture [164 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
7W5 M<br>1 a<br>7W5 = Specific Device Code<br>M = Date Code*<br>| = Pb−Free Package<br>(Note: Microdot may be in either location)<br>*Date Code orientation and/or overbar may<br>vary depending upon manufacturing location.<br>**----- End of picture text -----**<br>


**ORDERING INFORMATION Device Package Shipping**[†] MA3075WALT1G SOT−23 3000 / (Pb−Free) Tape & Reel SZMA3075WALT1G SOT−23 3000 / (Pb−Free) Tape & Reel ~~——~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

1. Non−repetitive 100 s pulse width 

2. Mounted on FR−5 Board = 1.0 X 0.75 X 0.062 in. 

Publication Order Number: **MA3075WALT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2001 **October, 2017 − Rev. 4** 

**MA3075WALT1G, SZMA3075WALT1G** 

|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**||||**Unit**<br>V<br>V<br>�<br>�<br>�A<br>�A<br>mV/°C<br>pF|VC VBR|VC VBR|VC VBR|IPP<br>IF<br>**V**<br>**I**<br>IR<br>IT<br>VRWM<br>VF|IPP<br>IF<br>**V**<br>**I**<br>IR<br>IT<br>VRWM<br>VF|
|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||VBR||IF<br>VRWM||
|**Parameter**|**Symbol**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**||||||
|||||||||||||
|Forward Voltage|VF|IF= 10 mA||0.8|0.9|V||||||
|Zener Voltage*2|VZ|IZ= 5 mA|7.2|7.5|7.9|V||||||
|Operating Resistance|RZK|IZ= 0.5 mA|||120|�||||||
||RZ|IZ= 5 mA||6|15|�||||||
||||||||||||IPP<br>IR<br>IT<br>|
|Reverse Current|IR1|VR= 5 V|||1|�A||||||
||IR2|VR= 6.5 V|||60|�A||||||
|Temperature Coefficient<br>of Zener Voltage*3|SZ|IZ= 5 mA|2.5|4.0|5.3|mV/°C||||||
|||||||||||||
|Terminal Capacitance|Ct|VR= 0 V||80||pF||||||
|||||||||||||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**==> picture [67 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
Uni−Directional<br>**----- End of picture text -----**<br>


**==> picture [489 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
300 100<br>tr PEAK VALUE IRSM @ 8  � s<br>90<br>250 80 PULSE WIDTH (tp) IS DEFINED<br>AS THAT POINT WHERE THE<br>200 70 PEAK CURRENT DECAY = 8  � s<br>60<br>HALF VALUE IRSM/2 @ 20  � s<br>150 50<br>40<br>100<br>30<br>t<br>p<br>20<br>50<br>10<br>0 0<br>0 25 50 75 100 125 150 175 0 20 40 60 80<br>TEMPERATURE ( ° C) t, TIME ( � s)<br>Figure 1. Steady State Power Derating Curve Figure 2. 8 X 20  � s Pulse Waveform<br>1000 100<br>TA = 85 ° C −40 ° C<br>10<br>100<br>25 ° C<br>1<br>10<br>0.1<br>1 0.01<br>10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2<br>tp, PULSE WIDTH ( � s) VF, FORWARD VOLTAGE (V)<br>, POWER DISSIPATION (mW)<br>D<br>P % OF PEAK PULSE CURRENT<br>, PEAK POWER (W)<br>PK<br>P<br>, FORWARD CURRENT (mA)<br>IF<br>**----- End of picture text -----**<br>


**Figure 3. Pulse Rating Curve** 

**Figure 4. Forward Current versus Forward Voltage** 

**www.onsemi.com** 

**2** 

**MA3075WALT1G, SZMA3075WALT1G** 

**==> picture [240 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2<br>1<br>IF = 100 mA<br>0.8<br>3 mA<br>0.6<br>10 mA<br>0.4<br>0.2<br>0<br>−60 −40 −20 0 20 40 60 80 100<br>TA, AMBIENT TEMPERATURE ( ° C)<br>, FORWARD VOLTAGE (V)<br>F<br>V<br>**----- End of picture text -----**<br>


**Figure 5. Forward Voltage versus Temperature** 

**==> picture [240 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>VR = 6 V<br>100<br>VR = 5 V<br>10<br>1<br>VR = 1 V<br>0.1<br>−60 −40 −20 0 20 40 60 80 100<br>TA, AMBIENT TEMPERATURE ( ° C)<br>, LEAKAGE CURRENT (nA)<br>IR<br>**----- End of picture text -----**<br>


**Figure 7. Leakage Current versus Temperature** 

**==> picture [239 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
90<br>80<br>f = 1 MHz<br>70 TA = 25 ° C<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 1 2 3 4 5 6 7 8<br>VR, REVERSE VOLTAGE (V)<br>Cd, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 9. Capacitance** 

**==> picture [235 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100 TA = 85 ° C<br>−40 ° C<br>10<br>25 ° C<br>1<br>0.1<br>0.01<br>0 1 2 3 4 5 6 7 8<br>VR, REVERSE VOLTAGE (V)<br>, LEAKAGE CURRENT (nA)<br>IR<br>**----- End of picture text -----**<br>


**Figure 6. Leakage Current versus Reverse Voltage** 

**==> picture [242 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>TA = −40 ° C 85 ° C<br>10<br>25 ° C<br>1<br>0.1<br>0.01<br>0.001<br>5.5 6 6.5 7 7.5 8 8.5<br>VZ, ZENER VOLTAGE (V)<br>, ZENER CURRENT (mA)<br>IZ<br>**----- End of picture text -----**<br>


**Figure 8. Zener Current versus Zener Voltage** 

**==> picture [236 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>10<br>1<br>0.1<br>0.1 1 10 100<br>IZ, ZENER CURRENT (mA)<br>) �<br>, OPERATING RESISTANCE (<br>Z<br>R<br>**----- End of picture text -----**<br>


**Figure 10. Operating Resistance versus Zener Current** 

**www.onsemi.com** 

**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [494 x 668] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AS<br>2 DATE 30 JAN 2018<br>SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>“a 3 t = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>= T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c<br>GENERIC<br>END VIEW<br>MARKING DIAGRAM*<br>RECOMMENDED<br>SOLDERING FOOTPRINT XXXM<br>1<br>2.90 i 0.903X XXX = Specific Device Code oo<br>M = Date Code<br>= Pb−Free Package<br>LO | cr ,<br>*This information is generic. Please refer to<br>3X 0.80 a) LL 0.95 device data sheet for actual part marking.<br>PITCH Pb−Free indicator, “G” or microdot “ ”, |<br>DIMENSIONS: MILLIMETERS may or may not be present.<br>STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1<br>aes<br>ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>


www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative 

◊ 

**==> picture [232 x 43] intentionally omitted <==**