M1MA152WAT1G

## M1MA151WAT1, M1MA152WAT1 

## **Preferred Device** 

## Common Anode Silicon Dual Switching Diodes 

These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount applications. 

## **http://onsemi.com** 

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## **Features** 

- Fast trr, < 10 ns 

- Low CD, < 15 pF 

• Pb−Free Packages are Available 1 CATHODE 2 **MAXIMUM RATINGS** (TA = 25 ° C) **Rating Symbol Value Unit SC−59** Reverse Voltage VR **CASE 318D** M1MA151WAT1 40 Vdc M1MA152WAT1 80 Peak Reverse Voltage VRM M1MA151WAT1 40 Vdc **MARKING DIAGRAM** M1MA152WAT1 80 Forward Current IF Single 100 mAdc Dual 150 Mx M Peak Forward Current IFM Single 225 mAdc Dual 340 1 Peak Forward Surge Current Single (Note 1)IFSM 500 mAdc Mx = Device Code Dual 750 x = N for 151 ~~Sole~~ O for 152 **THERMAL CHARACTERISTICS** M = Date Code* **Rating Symbol Max Unit** = Pb−Free Package (Note: Microdot may be in either location) Power Dissipation PD 200 mW Junction Temperature TJ 150 ° C upon manufacturing location. ~~—~~ Storage Temperature Tstg −55 to +150 ° C **ORDERING INFORMATION** ae Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended **Device Package** Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. M1MA151WAT1 SC−59 1. t = 1 SEC 

= Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. **ORDERING INFORMATION** ae **Device Package Shipping**[†] M1MA151WAT1 SC−59 3000/Tape & Reel M1MA151WAT1G SC−59 3000/Tape & Reel (Pb−Free) M1MA152WAT1 SC−59 3000/Tape & Reel M1MA152WAT1G SC−59 3000/Tape & Reel (Pb−Free) ~~a~~ 

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**Preferred** devices are recommended choices for future use and best overall value. 

Publication Order Number: **M1MA151WAT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2012 **July, 2012 − Rev. 10** 

**M1MA151WAT1, M1MA152WAT1** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Condition**|**Min**|**Max**|**Unit**|
|Reverse Voltage Leakage Current<br>M1MA151WAT1<br>M1MA152WAT1|IR|VR= 35 V<br>VR= 75 V|−|0.1|�Adc|
|Forward Voltage|VF|IF= 100 mA|−|1.2|Vdc|
|Reverse Breakdown Voltage<br>M1MA151WAT1<br>M1MA152WAT1|VR|IR= 100�A|40<br>80|−|Vdc|
|Diode Capacitance|CD|VR= 0, f = 1.0 MHz|−|15|pF|
|Reverse Recovery Time (Figure 1)|trr<br>(Note 2)|IF= 10 mA, VR= 6.0 V,<br>RL= 100�, Irr= 0.1 IR|−|10|ns|



2. trr Test Circuit 

## **RECOVERY TIME EQUIVALENT TEST CIRCUIT** 

## **INPUT PULSE OUTPUT PULSE** 

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tr tp trr<br>IF t<br>t<br>10%<br>Irr = 0.1 IR<br>90%<br>IF = 10 mA<br>VR tp = 2  � s VRRL = 100  = 6 V �<br>tr = 0.35 ns<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Recovery Time Equivalent Test Circuit** 

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**2** 

**M1MA151WAT1, M1MA152WAT1** 

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100<br>10<br>TA = 85°C<br>TA = 25°C<br>1.0<br>TA = -�40°C<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VF, FORWARD VOLTAGE (VOLTS)<br>Figure 2. Forward Voltage<br>10 TA = 150°C<br>TA = 125°C<br>1.0<br>TA = 85°C<br>0.1<br>TA = 55°C<br>0.01<br>TA = 25°C<br>0.001<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Leakage Current<br>1.75<br>1.5<br>1.25<br>1.0<br>0.75<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>IF, FORWARD CURRENT (mA)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 4. Capacitance** 

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**3** 

**M1MA151WAT1, M1MA152WAT1** 

## **PACKAGE DIMENSIONS** 

**SC 9** CASE 318D 4 ISSUE H 

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D | | NOTES: 2 CONTROLLING DMENSION:MILMETER, MILLIMETERS INCHES<br>3 _ | DIM {|a MIN ——_, | NOM MAX MIN NOM MAX<br>HE 1 2 E aa A1A | 1.000.01 1.150.06 1.300.10 0.0390.001 0.0450.002 0.0510.004<br>b 0.35 0.43 0.50 0.014 0.017 0.020<br>c 0.09 0.14 0.18 0.003 0.005 0.007<br>D 2.70 2.90 3.10 0.106 0.114 0.122<br>b E 1.30 1.50 1.70 0.051 0.059 0.067<br>e 1.70 1.90 2.10 0.067 0.075 0.083<br>LL. e | | aGG HLE GG 0.202.50 0.402.80 0.603.00 0.0080.099 0.0160.110 0.0240.118 |<br>C STYLE 5:<br>A PIN 1. CATHODE<br>pi4 2. CATHODE |<br>3. ANODE<br>OF sh L =<br>A1<br>SOLDERING FOOTPRINT*<br>0.95<br>0.95 0.037<br>0.037<br>2.4<br>0.094<br>1.0<br>0.039<br>0.8 SCALE 10:1 mm<br>0.031 ae i inches<br>*For additional information on our Pb ree strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**M1MA151WAT1/D** 

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