LXA16T600C
Fast / Ultrafast Diode, Qspeed, 600 V, 16 A, Dual Common Cathode, 2.94 V, 21.5 ns, 60 A
- Manufacturer: POWER INTEGRATIONS
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- No. of Pins: 3 Pin
- Product Range: Qspeed X Series
- Diode Case Style: TO-220AB
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 2.94V
- Forward Surge Current: 60A
- Reverse Recovery Time: 21.5ns
- Average Forward Current: 16A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.687 € |
| Current stock | 10+ |
| Lead time | 30 days |
**LXA16T600C Qspeed[™]** Family ## **600 V, 16 A X-Series Common-Cathode Diode** ## **Product Summary** |IF(AVG) per diode|8|A| |---|---|---| |VRRM|600|V| |QRR(Typat 125 °C)|82|nC| |IRRM (Typat 125 °C)|3.5|A| |Softness tb/ta(Typat 125 °C)|0.55|| ## **General Description** This device has the lowest QRR of any 600 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. ## **Applications** ## **Pin Assignment** - Power Factor Correction (PFC) Boost Diode - Motor drive circuits - DC-AC inverters ## **Features** - Low QRR, Low IRRM, Low tRR - High dIF/dt capable (1000 A/µs) - Soft recovery ## **TO-220AB A1 K A2** o ~~t~~ ## RoHS Compliant Package uses Lead-free plating and Green mold compound. ## **Benefits** - Increases efficiency - Eliminates need for snubber circuits - Reduces EMI filter component size & count - Enables extremely fast switching Halogen free per IEC 61249-2-21. ## **Absolute Maximum Ratings** Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. |**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Conditions**<br>~~ee~~|**Rating**<br>~~ee~~|**Units**| |---|---|---|---|---| |VRRM<br>~~ee~~|Peak repetitive reverse voltage<br>~~ee~~|~~ee~~|600<br>~~ee~~|V| |IF(AVG)<br>~~ee~~|Average forward current<br>~~ee~~|Per Diode,TJ= 150 °C,TC= 122°C<br>~~ee~~|8<br>~~ee~~|A| |||Per Device,TJ= 150 °C,TC= 122°C|16|A| |IFSM|Non-repetitivepeak surge current|60 Hz,½ cycle|60|A| |IFSM|Non-repetitivepeak surge current|½ cycle of t = 28μs Sinusoid,TC= 25 °C|350|A| |TJ|Maximumjunction temperature||150|°C| |TSTG|Storage temperature||–55 to 150|°C| ||Lead solderingtemperature|Leads at 1.6mm from case,10 sec|300|°C| |PD|Power dissipation|TC= 25 °C|83|W| ## **Thermal Resistance** |**Symbol**|**Resistance from:**|**Conditions**|**Rating**|**Units**| |---|---|---|---|---| |RJA|Junction to ambient|TO-220AB|62|°C/W| |RJC|Junction to case|Per Diode|1.5|°C/W| |||Per Device|0.8|°C/W| November 2013 www.powerint.com |**Symbol**<br>~~gees~~|**Parameter**<br>~~gees~~|**Conditions**<br>~~gees~~|**Conditions**<br>~~gees~~|**Min**<br>~~gees~~|**Typ**<br>~~gees~~|**Max**<br>~~gees~~|**Units**<br>~~gees~~| |---|---|---|---|---|---|---|---| |**DC Characteristicsper diode**<br>~~gees~~|||||||| |IR<br>~~gees~~|Reverse current per diode<br>~~gees~~|VR= 600 V, TJ= 25 °C<br>~~gees~~||-<br>~~gees~~|-<br>~~gees~~|250<br>~~gees~~|A<br>~~gees~~| |||VR= 600 V,TJ= 125 °C<br>~~gees~~||-<br>~~gees~~|0.85<br>~~gees~~|-<br>~~gees~~|mA<br>~~gees~~| |VF<br>~~gees~~|Forward voltage per diode<br>~~gees~~|IF= 8 A,TJ= 25 °C<br>~~gees~~||-<br>~~gees~~|2.35<br>~~gees~~|2.94<br>~~gees~~|V<br>~~gees~~| |||IF= 8 A,TJ= 150 °C<br>~~gees~~||-<br>~~gees~~|2.1<br>~~gees~~|-<br>~~gees~~|V<br>~~gees~~| |CJ<br>~~gees~~|Junction capacitance per<br>diode<br>~~gees~~|VR= 10 V, 1 MHz<br>~~gees~~||-<br>~~gees~~|40<br>~~gees~~|-<br>~~gees~~|pF<br>~~gees~~| |**Dynamic Characteristicsper diode**|||||||| |tRR|Reverse recovery time,<br>per diode|dIF/dt =200 A/s<br>VR=400, IF=8 A|TJ=25 °C|-|21.5|-|ns| ||||TJ=125 °C|-|33|-|ns| |QRR|Reverse recovery charge,<br>per diode|dIF/dt =200 A/s<br>VR=400, IF=8 A|TJ=25 °C|-|31|48|nC| ||||TJ=125 °C|-|82|-|nC| |IRRM|Maximum reverse<br>recovery current, per<br>diode|dIF/dt =200 A/s<br>VR=400, IF=8 A|TJ=25 °C|-|2.2|2.8|A| ||||TJ=125 °C|-|3.5|-|A| |S<br>~~oT~~|Softness per diode=<br>a<br>b<br>t<br>t<br>~~oT~~|dIF/dt =200 A/s<br>VR=400, IF=8 A<br>~~oT~~|TJ=25 °C<br>~~oT~~|-<br>~~oT~~|0.74|-|| ||||TJ=125 °C<br>~~oT~~|-<br>~~oT~~|0.55|-|| **==> picture [453 x 137] intentionally omitted <==** **----- Start of picture text -----**<br> VR<br>D1<br>L1 DUT<br>IF tRR 15V<br>dIF/dt Pulse generator + Rg<br>ta tb Q1<br>0<br>0.2xIRRM<br>IRRM<br>**----- End of picture text -----**<br> **Figure 1. Reverse Recovery Definitions** **Figure 2. Reverse Recovery Test Circuit** 2 www.powerint.com Rev 1.1 11/13 **LXA16T600C** ## **Electrical Specifications at TJ= 25** **C (unless otherwise specified)** **==> picture [441 x 497] intentionally omitted <==** **----- Start of picture text -----**<br> 24 160<br>22 A A ee<br>140<br>20<br>18 Tj=125C 120<br>16 s a a OO<br>100<br>14 OA | | | | jt} tt<br>12 80<br>10 A Tj=25C<br>60<br>8<br>6 S ESS || 40 ERRRECEEE<br>4<br>20<br>2 >SS S || REESE| Sw || | |<br>0 et 0 Po<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 100 120 140 160 180<br>VF (V) VR (V)<br>Figure 3. Typical IF vs VF Figure 4. Typical Cj vs VR<br>dI/dt=1000A/us<br>160 40 dI/dt=200A/us<br>140 35<br>dI/dt=500A/us<br>120 30<br>dI/dt=500A/us<br>100 25<br>80 20<br>dI/dt=200A/us<br>60 15<br>dI/dt=1000A/us<br>40 [am | | tl 10 [TY |LTT<br>20 7] | | cE 5 P77] |TTT<br>0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14<br>IF (A) IF (A)<br>Figure 5. Typical QRR vs IF at TJ = 125 °C Figure 6. Typical tRR vs IF at Tj = 125 °C<br>25 100<br>90<br>| ee ee ee<br>20 80<br>70<br>15 60<br>10 > 5040 Po CU<br>30<br>5 NX 20 rr a ee ee<br>10<br>0 0 ee ee ee<br>25 TN 50 75 100 125 150 |) SSS 25 50 75 100 125 150<br>Case Temperature, TC ( [o] C) Case Temperature, TC ( [o] C)<br>(A)IF C(pF)j<br> (nC) (ns)<br>QRR tRR<br> (A)<br>IF(AV) P (W)<br>**----- End of picture text -----**<br> **Figure 7. DC Current Derating Curve** **Figure 8. Power Derating Curve** ## 3 ~~|~~ Rev 1.1 11/13 www.powerint.com RE POWwEr **LXA16T600C** **==> picture [245 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 55<br>Duty=10%<br>50 | [oOo]<br>a NT Duty=30%<br>45<br>40 PoE aCOUNee ee Duty=50%<br>35 PSO DC<br>30 Po ON ONT<br>25 Po RNR<br>20 ee NN<br>a ee ee a ee ee<br>15<br>a he eeee<br>10<br>5 ee ee <a Oe<br>0 ee ee eees NN<br>25 50 75 100 125 150<br>TC(°C)<br>(PEAK) (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 9. IF(Peak) vs TC, f=70 kHz** **==> picture [86 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> LXA16T600C<br>**----- End of picture text -----**<br> **==> picture [442 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D= 0.5<br>D = 0.3<br>D= 0.1<br>0.1<br>D= 0.05<br>D= 0.02<br>D= 0.01<br>0.01<br>D= 0.005<br>D= 0.002 a<br>1. Duty factor D = ty /t2<br>Single Pulse 2. Peak Ty=P DM X Zthuc + Te<br>0.001<br>1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00<br>t1(sec)<br>Zth(j-c)/Rth(j-c)<br>**----- End of picture text -----**<br> **Figure 10. Normalized Maximum Transient Thermal Impedance** 4 www.powerint.com Rev 1.1 11/13 **LXA16T600C** **==> picture [479 x 331] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensional Outline Drawings<br>TO-220AB<br>A<br>E A1<br>Millimeters<br>Q Dim MIN MAX<br>øP A 4.32 4.70<br>A1 1.11 1.38<br>D i A2 2.59 2.79<br>b 0.77 1.00<br>D1 b2 1.23 1.36<br>C 0.34 0.47<br>D 14.71 15.75<br>D1 9.05 9.25<br>b2 L1 E 9.96 10.36<br>e 2.44 2.64<br>e1 4.98 5.18<br>L 12.70 14.22<br>L<br>L1 – 3.90<br>b c ØP 3.71 3.96<br>Q 2.54 2.90<br>e A2<br>l e1 in i a===<br>Mechanical Mounting<br>Maximum Torque / Pressure specification<br>Method<br>Screw through hole in package tab 1 Newton Meter (nm) or 8.8 inch-pounds (lb-in)<br>SS Clamp against package body 12.3 kilogram-force per square centimeter (kgf/cm [2] ) or 175 lbf/in [2]<br>**----- End of picture text -----**<br> **Soldering time and temperature:** This product has been designed for use with hightemperature, lead-free solder. The component leads can be subjected to a maximum temperature of 300 °C, for up to 10 seconds. See Application Note AN-303, for more details. ## **Ordering Information** **Part Number Package Packing** LXA16T600C TO-220AB 50 units/tube ~~ee ee ee~~ ## **The information contained in this document is subject to change without notice.** Rev 1.1 11/13 www.powerint.com 5 ## **LXA16T600C** |**Revision**|**Notes**|**Date**| |---|---|---| |1.0|Released by Qspeed|06/10| |1.1|Converted to Power Integrations Document|01/11| |1.1|Stop Point of tRRerror corrected due to typo in Figure 1|11/13| 6 www.powerint.com Rev 1.1 11/13 S| **LXA16T600C** ## **For the latest updates, visit our website: www.powerint.com** Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS. ## **PATENT INFORMATION** The products and applications illustrated herein (including transformer construction and circuits’ external to the products) may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at www.powerint.com. Power Integrations grants its customers a license under certain patent rights as set forth at http://www.powerint.com/ip.htm. The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, LYTSwitch, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero, HiperPFS, HiperTFS, HiperLCS, Qspeed, EcoSmart, Clampless, E-Shield, Filterfuse, StackFET, PI Expert and PI FACTS are trademarks of Power Integrations, Inc. Other trademarks are property of their respective companies. ©Copyright 2013 Power Integrations, Inc. ## **Power Integrations Worldwide Sales Support Locations** ## **WORLD HEADQUARTERS** 5245 Hellyer Avenue San Jose, CA 95138, USA. Main: +1-408-414-9200 Customer Service: Phone: +1-408-414-9665 Fax: +1-408-414-9765 _e-mail: usasales@powerint.com_ ## **GERMANY** Lindwurmstrasse 114 80337, Munich Germany Phone: +49-895-527-39110 Fax: +49-895-527-39200 _e-mail: eurosales@powerint.com_ ## **JAPAN** Kosei Dai-3 Building 2-12-11, Shin-Yokohama, Kohoku-ku, Yokohama-shi, Kanagawa 222-0033 Japan Phone: +81-45-471-1021 Fax: +81-45-471-3717 _e-mail: japansales@powerint.com_ ## **TAIWAN** 5F, No. 318, Nei Hu Rd., Sec. 1 Nei Hu District Taipei 11493, Taiwan R.O.C. Phone: +886-2-2659-4570 Fax: +886-2-2659-4550 _e-mail: taiwansales@powerint.com_ ## **CHINA (SHANGHAI)** Rm 2410, Charity Plaza, No. 88, North Caoxi Road, Shanghai, PRC 200030 Phone: +86-21-6354-6323 Fax: +86-21-6354-6325 _e-mail: chinasales@powerint.com_ ## **INDIA** #1, 14[th] Main Road Vasanthanagar Bangalore-560052 India Phone: +91-80-4113-8020 Fax: +91-80-4113-8023 _e-mail: indiasales@powerint.com_ ## **KOREA** RM 602, 6FL Korea City Air Terminal B/D, 159-6 Samsung-Dong, Kangnam-Gu, Seoul, 135-728 Korea Phone: +82-2-2016-6610 Fax: +82-2-2016-6630 _e-mail: koreasales@powerint.com_ ## **EUROPE HQ** 1st Floor, St. James’s House East Street, Farnham Surrey GU9 7TJ United Kingdom Phone: +44 (0) 1252-730-141 Fax: +44 (0) 1252-727-689 _e-mail: eurosales@powerint.com_ ## **CHINA (SHENZHEN)** 3rd Floor, Block A, Zhongtou International Business Center, No. 1061, Xiang Mei Rd, FuTian District, ShenZhen, China, 518040 Phone: +86-755-8379-3243 Fax: +86-755-8379-5828 _e-mail: chinasales@powerint.com_ ## **ITALY** Via Milanese 20, 3[rd] . Fl. 20099 Sesto San Giovanni (MI) Italy Phone: +39-024-550-8701 Fax: +39-028-928-6009 _e-mail: eurosales@powerint.com_ ## **SINGAPORE** 51 Newton Road, #19-01/05 Goldhill Plaza Singapore, 308900 Phone: +65-6358-2160 Fax: +65-6358-2015 _e-mail: singaporesales@powerint.com_ ## **APPLICATIONS HOTLINE** World Wide +1-408-4149660 ## **APPLICATIONS FAX** World Wide +1-408-4149760 ## 7 ~~|~~ Rev 1.1 11/13 www.powerint.com RE POWwEr
Updated at February 9, 2023
Power Integrations is a leading innovator in semiconductor technologies dedicated to high-voltage power conversion. Renowned for advancing the clean-power ecosystem, the company designs highly integrated chips that maximize energy efficiency across a vast range of consumer and industrial applications. Through proprietary advancements like PowiGaN gallium-nitride technology and EcoSmart energy-efficiency solutions, their components deliver exceptional performance while significantly reducing global energy waste. A major focus of their product lineup includes discrete semiconductors, particularly fast and ultrafast recovery rectifier diodes. These essential components provide the high-speed switching and exceptional reliability required for modern power supply designs. By minimizing power loss and thermal output, they ensure efficient power transmission in demanding, high-efficiency circuit environments. Furthermore, Power Integrations is a premier manufacturer of specialized LED lighting components. Their advanced AC/DC LED driver ICs offer engineers streamlined, energy-efficient solutions for solid-state lighting applications. By integrating critical control and protection features into a single footprint, these drivers reduce the overall component count and accelerate the development of reliable, high-performance commercial and consumer lighting systems.
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