LVE2560E-M3/P

**LVE2560E** 

## www.vishay.com a ~~[oe]~~ 

Vishay General Semiconductor 

## **Low VF Single-Phase Single In-Line Bridge Rectifiers** 

## **FEATURES** 

- UL recognition file number E312394 

- Thin single in-Iine package 

- Oxide planar chip junction 

- Low forward voltage drop 

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~ ~<br>X [‘] ~ ~ [°] Case Style GSIB-5S<br>**----- End of picture text -----**<br>


- High surge current capability 

- Low noise 

- High case dielectric strength of 2500 VRMS, 1 minute 

## **LINKS TO ADDITIONAL RESOURCES** 

3D Models 

- Solder dip 275 °C max. 10 s, per JESD 22-B106 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ~~oo~~ 

## **TYPICAL APPLICATIONS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|25 A|
|VRRM|600 V|
|IFSM|360 A|
|IR|10 μA|
|VFat IF= 12.5 A, TA= 125 °C|0.74 V|
|TJmax.|150 °C|
|Package|GSIB-5S|
|Circuit configuration|In-line|



General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, and white-goods applications specially for telecom power supply, high efficiency desktop PC, and server SMPS. 

## **MECHANICAL DATA** 

## **Case:** GSIB-5S 

Epoxy meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade 

**Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 

M3 suffix meets JESD 201 class 1A whisker test 

**Polarity:** as marked on body 

**Mounting Torque:** 10 cm-kg (8.8 in-lbs) maximum **Recommended Torque:** 5.7 cm-kg (5 in-lbs) 

|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|
|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**LVE2560E**|**UNIT**|
|Markingcode||LVE2560E||
|Maximum repetitive peak reverse voltage|VRRM|600|V|
|Maximum RMS voltage|VRMS|420|V|
|Maximum DC blockingvoltage|VDC|600|V|
|Maximum average forward rectified<br>output current at<br>TC= 118.7 °C<br>TA= 25 °C|IO (1)|25|A|
||IO (2)|4.0||
|Non-repetitive peak forward surge current 8.3 ms single<br>sine-wave, TJ= 25 °C|IFSM|360|A|
|Ratingfor fusing(t < 8.3 ms), TJ= 25 °C|I2t|537|A2s|
|Operatingjunction and storage temperature range|TJ, TSTG|-55 to +150|°C|



## **Notes** 

> (1) Unit case mounted on aluminum plate heatsink 

- (2) Units mounted on PCB without heatsink 

**1** 

Revision: 22-Aug-2023 

Document Number: 98363 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## **LVE2560E** www.vishay.com Vishay General Semiconductor va ~~a~~ 

|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**TEST CONDITIONS**||**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Instantaneous forward voltage|IF= 12.5 A|TJ= 25 °C|VF (1)|0.87|0.92|V|
|||TJ= 125 °C||0.74|-||
|Reverse current per diode|VR= 600 V|TJ= 25 °C|IR (2)|0.03|10|μA|
|||TJ= 125 °C||15.0|-||
|Typical reverse recovery time|IF= 0.5 A, IR= 1.0 A, Irr= 0.25 A||trr|309|-|ns|
|Typical junction capacitance|4.0 V, 1 MHz||CJ|240|-|pF|



## **Notes** 

> (1) Pulse test: 300 μs pulse width, 1 % duty cycle 

> (2) Pulse test: pulse width ≤ 40 ms 

**THERMAL CHARACTERISTICS** (TA = 25 °C unless otherwise noted) **PARAMETER SYMBOL LVE2560E UNIT** RθJA[(2)] 24 Maximum thermal resistance °C/W ~~——<—————~~ RθJC[(1)] 1 **Notes** (1) With heatsink (2) Without heatsink, free air 

**ORDERING INFORMATION** (Example) **PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE** LVE2560E-M3/P 6.9 P 20 Tube ~~——______=~~ 

## **RATINGS AND CHARACTERISTICS CURVES** (TA = 25 °C unless otherwise noted) 

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30<br>With heatsink, sine-wave, R-load<br>25 pf<br>20<br>15<br>TC measured at device bottom<br>10<br>5<br>0 FEE<br>0 25 50 75 100 125 150<br>Case Temperature (°C)<br>Fig. 1 - Derating Curve Output Rectified Current<br>Average Forward Rectified Current (A)<br>**----- End of picture text -----**<br>


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5<br>4<br>3<br>2<br>1<br>Without heatsink sine-wave, R-load,<br>free air, TA<br>0 ae<br>0 25 50 75 100 125 150<br>Ambient Temperature (°C)<br>Fig. 2 - Forward Current Derating Curve<br>Average Forward Rectified Current (A)<br>**----- End of picture text -----**<br>


Revision: 22-Aug-2023 

Document Number: 98363 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**LVE2560E** 

## www.vishay.com 

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14.<br>D = 0.5 D = 0.8<br>12.0<br>D = 0.3<br>10.0 D = 0.2<br>D = 0.1<br>8.0<br>D = 1.0<br>6.0<br>4.0 T<br>2.0<br>D = tp/T tp<br>0<br>0 2 4 6 8 10 12 14<br>Average Forward Current (A)<br>Average Power Loss (W)<br>**----- End of picture text -----**<br>


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Fig. 3 - Forward Power Dissipation<br>**----- End of picture text -----**<br>


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100<br>TJ = 150 °C<br>10 TJ = 125  ° C<br>1 TJ = 100 °C<br>TJ = 75 °C<br>T J  = 25 °C<br>0.1<br>T J  = -40 °C<br>0.01<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>Instantaneous Forward Voltage (V)<br>Instantaneous Forward Current (A)<br>**----- End of picture text -----**<br>


Fig. 4 - Typical Forward Characteristics Per Diode 

## Vishay General Semiconductor 

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1000 10000<br>TJ = 25 °C,<br>f = 1.0 MHz,<br>V sig = 50 mV p-p<br>100 1000<br>10 100<br>1 10<br>0.1 1 10 100<br>Reverse Voltage (V)<br>Junction Capacitance (pF)<br>**----- End of picture text -----**<br>


Fig. 6 - Typical Junction Capacitance Per Diode 

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100 10000<br>Junction to ambient<br>10 1000<br>1 100<br>0.1 10<br>0.01 0.1 1 10 100<br>tp - Pulse Duration (s)<br>Fig. 7 - Typical Transient Thermal Impedance<br>Transient Thermal Impedance (°C/W)<br>**----- End of picture text -----**<br>


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10000<br>100 TJ = 150 °C<br>10 TJ = 125 °C<br>T J = 100 °C 1000<br>1<br>TJ = 75 °C<br>0.1<br>100<br>TJ = 25 °C<br>0.01 TJ = -40 °C<br>0.001 10<br>10 20 30 40 50 60 70 80 90 100<br>Percent of Rated Peak Reverse Voltage (%)<br>Instantaneous Reverse Current (µA)<br>**----- End of picture text -----**<br>


Fig. 5 - Typical Reverse Characteristics Per Diode 

Revision: 22-Aug-2023 

Document Number: 98363 

**3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**LVE2560E** 

Vishay General Semiconductor 

www.vishay.com 

## **PACKAGE OUTLINE DIMENSIONS** in millimeters 

## **Case Style GSIB-5S** 

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4.6 ± 0.2<br>3.6 ± 0.2<br>30 ± 0.3<br>+<br>2.5 ± 0.2<br>2.7 ± 0.2<br>2.2 ± 0.2<br>1 ± 0.1<br>0.7 ± 0.1<br>7.5  7.5<br>10 ± 0.2  ± 0.2  ± 0.2<br>0.2  ± 0.2<br>3.5 ± 3.2<br>0.3<br>20 ±<br>5  11 ± 0.2<br>0.5<br>±<br>4 ± 0.2<br>17 .5<br>**----- End of picture text -----**<br>


Revision: 22-Aug-2023 

Document Number: 98363 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

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Revision: 01-Jan-2023 

Document Number: 91000 

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