LVB2560-M3/45

**LVB2560** www.vishay.com Vishay General Semiconductor a ~~Te~~ **Low VF Single-Phase Single In-Line Bridge Rectifiers FEATURES** • UL recognition file number E54214, Vol. 1 • Thin single in-Iine package • Oxide planar chip junction ~~h~~ ~ ~~o~~ ~ ~~n~~ • Low forward voltage drop RoHS ~ • High surge current capability ‘ ~ 

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Case Style GSIB-5S<br>**----- End of picture text -----**<br>


- High case dielectric strength of 2500 VRMS, 1 minute 

- Solder dip 275 °C max. 10 s, per JESD 22-B106 

## **LINKS TO ADDITIONAL RESOURCES** 

3D Models 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|25 A|
|VRRM|600 V|
|IFSM|550 A|
|IR|10 μA|
|VFat IF= 12.5 A, TA= 125 °C|0.76 V|
|TJmax.|150 °C|
|Package|GSIB-5S|
|Circuit configuration|In-line|



- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **TYPICAL APPLICATIONS** 

General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications specially for telecom power supply, high efficiency desktop PC and server SMPS. 

## **MECHANICAL DATA** 

**Case:** GSIB-5S Epoxy meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade 

**Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 

M3 suffix meets JESD 201 class 1A whisker test 

**Polarity:** as marked on body 

**Mounting Torque:** 10 cm-kg (8.8 in-lbs) maximum 

**Recommended Torque:** 5.7 cm-kg (5 in-lbs) 

|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|
|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**LVB2560**|**UNIT**|
|Maximum repetitive peak reverse voltage|VRRM|600|V|
|Maximum average forward rectified<br>output current at<br>TC= 105 °C<br>TA= 25 °C|IO (1)|25|A|
||IO (2)|3.6||
|Non-repetitive peak forward surge current 8.3 ms single<br>sine-wave, TJ= 25 °C|IFSM|550|A|
|Ratingfor fusing(t < 8.3 ms)<br>TJ= 25 °C|I2t|1255|A2s|
|Operatingjunction and storage temperature range|TJ, TSTG|-55 to +150|°C|



## **Notes** 

> (1) Unit case mounted on aluminum plate heatsink 

> (2) Units mounted on PCB without heatsink 

Revision: 21-Jun-2022 

Document Number: 89393 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**LVB2560** 

Vishay General Semiconductor 

www.vishay.com 

|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**TEST CONDITIONS**||**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Instantaneous forward voltage|IF= 12.5 A|TA= 25 °C|VF (1)|0.89|0.92|V|
|||TA= 125 °C||0.76|-||
|Reverse current per diode|VR= 600 V|TA= 25 °C|IR (2)|0.2|10|μA|
|||TA= 125 °C||140|-||
|Typical reverse recovery time|IF= 0.5 A, IR=|1.0 A, Irr= 0.25 A|trr|1.8|-|μs|
|Typical junction capacitance|4.0 V, 1 MHz||CJ|330|-|pF|



## **Notes** 

- (1) Pulse test: 300 μs pulse width, 1 % duty cycle 

- (2) Pulse test: pulse width ≤ 40 ms 

|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|
|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**LVB2560**|**UNIT**|
|Maximum thermal resistance|RθJA (2)|25|°C/W|
||RθJC (1)|1.0||



## **Notes** 

- (1) With heatsink 

- (2) Without heatsink, free air 

|**EMC SURGE IMMUNITY TEST STANDARD**(TA= 25 °C, unless otherwise noted)|**EMC SURGE IMMUNITY TEST STANDARD**(TA= 25 °C, unless otherwise noted)|**EMC SURGE IMMUNITY TEST STANDARD**(TA= 25 °C, unless otherwise noted)|**EMC SURGE IMMUNITY TEST STANDARD**(TA= 25 °C, unless otherwise noted)|**EMC SURGE IMMUNITY TEST STANDARD**(TA= 25 °C, unless otherwise noted)|**EMC SURGE IMMUNITY TEST STANDARD**(TA= 25 °C, unless otherwise noted)|
|---|---|---|---|---|---|
|**STANDARD**|**TEST TYPE**|**TEST CONDITIONS**|**SYMBOL**|**CLASS**|**VALUE**|
|IEC 61000-4-5|Power supply couplingmode, line to line|1.2/50 μs waveform, R = 2Ω, TA= 25 °C(1)|VPEAK|-|6 kV maximum|



## **Note** 

- (1) Immunity to IEC 61000-4-5 peak pulse voltage test, 1.2/50 μs, 2 Ω, 5 times each of positive and negative polarity test 

|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|
|---|---|---|---|---|
|**PREFERRED P/N**|**UNIT WEIGHT (g)**|**PREFERRED PACKAGE CODE**|**BASE QUANTITY**|**DELIVERY MODE**|
|LVB2560-M3/45|7.1|45|20|Tube|



Revision: 21-Jun-2022 

Document Number: 89393 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**LVB2560** 

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www.vishay.com<br>**----- End of picture text -----**<br>


## Vishay General Semiconductor 

## **RATINGS AND CHARACTERISTICS CURVES** (TA = 25 °C unless otherwise noted) 

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30 100<br>With Heatsink, Sine-Wave, R-Load<br>25<br>Hr TA = 150 °C<br>20 ERR 10 a ee eee eae<br>15<br>Pte TC Measurement T LIN | |SSS VfafF<br>TA = 125 °C T A = 25 °C<br>10 1 —FA<br>5 T A  = 100 °C<br>Af<br>0 ply TEE 0.1 n/a<br>0 20 40 60 80 100 120 140 160 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1<br>Temperature (°C) Instantaneous Forward Voltage (V)<br>Fig. 1 - Derating Curve Output Rectified Current Fig. 4 - Typical Forward Characteristics Per Diode<br>5 1000<br>TA = 150 °C<br>SSS<br>4 100 ==<br>TA = 125 °C<br>=== eee<br>3 10 TA = 100  ° C<br>er<br>SSS SS SS<br>2 1 —<br>T A  = 25 °C<br>1 0.1 tt<br>Without Heatsink<br>0 Sine-wave, R-Load,Free Air, TA 0.01 SSSaeeee ee ee<br>0 25 50 75 100 125 150 10 20 30 40 50 60 70 80 90 100<br>Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%)<br>Fig. 2 - Forward Current Derating Curve Fig. 5 - Typical Reverse Characteristics Per Diode<br>1000<br>50 f = 1 MHz T J  = 25 °C<br>45 Vstg = 50 mVP-P<br>40 PCE A St<br>100<br>35<br>PEPE Ds<br>30<br>BOREEERRARAODUNEZA0000I UTNE UTIL SS<br>2520 EETTTTTT ArT 10 SSSet<br>15 PEELE EEE Perripo<br>10 PEELE ELLE Con<br>5<br>BNSPZcQRRAAODDDRERERRRALL 1 LETHE<br>0 BrA 0.1 1 ALI 10 ELT 100<br>0 5 10 15 20 25 Reverse Voltage (V)<br>Average Forward Current ( A )<br>Instantaneous Reverse Current (μA)<br>Average Forward Output Current (A) Instantaneous Forward Current (A)<br>Forward Power Dissipation (W)<br>Junction Capacitance (pF)<br>Average Forward Rectified Current (A)<br>**----- End of picture text -----**<br>


Fig. 4 - Typical Forward Characteristics Per Diode 

Fig. 5 - Typical Reverse Characteristics Per Diode 

Fig. 6 - Typical Junction Capacitance Per Diode 

Fig. 3 - Forward Power Dissipation 

Revision: 21-Jun-2022 

Document Number: 89393 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**LVB2560** 

Vishay General Semiconductor 

www.vishay.com 

## **PACKAGE OUTLINE DIMENSIONS** in millimeters 

## **Case Style GSIB-5S** 

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4.6 ± 0.2<br>3.6 ± 0.2<br>30 ± 0.3<br>+<br>2.5 ± 0.2<br>2.7 ± 0.2<br>2.2 ± 0.2<br>1 ± 0.1<br>0.7 ± 0.1<br>7.5  7.5<br>10 ± 0.2  ± 0.2  ± 0.2<br>0.2  ± 0.2<br>3.5 ± 3.2<br>0.3<br>20 ±<br>5  11 ± 0.2<br>0.5<br>±<br>4 ± 0.2<br>17 .5<br>**----- End of picture text -----**<br>


Revision: 21-Jun-2022 

Document Number: 89393 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

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Revision: 01-Jan-2022 

Document Number: 91000 

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