LQA40T200C
Fast / Ultrafast Diode, Qspeed, 200 V, 40 A, Common Cathode, 1.2 V, 17 ns, 170 A
- Manufacturer: POWER INTEGRATIONS
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):40A; Diode Configuration:Common Cathode; Forward Voltage VF Max:1.2V; Reverse Recovery Time trr Max:17ns; Forward Surge Cur
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 3 Pin
- Product Range: Qspeed Q Series
- Qualification: -
- Diode Case Style: TO-220AB
- Diode Configuration: Common Cathode
- Forward Voltage Max: 1.2V
- Forward Surge Current: 170A
- Reverse Recovery Time: 17ns
- Average Forward Current: 40A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 1.01 € |
| Current stock | 10+ |
| Lead time | 30 days |
## **LQA40T200C, LQA40B200C Qspeed[™]** Family ## **200 V, 40 A Common-Cathode Diode** ## **Product Summary** |IF(AVG) per diode|20|A| |---|---|---| |VRRM|200|V| |QRR(Typat 125 °C)|61|nC| |IRRM (Typat 125 °C)|3.7|A| |Softness tb/ta(Typat 125 °C)|0.32|| ## **General Description** This device has the lowest QRR of any 200 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. ## **Applications** - AC/DC and DC/DC output rectification ## **Pin Assignment** - Output and freewheeling diodes - Motor drive circuits - DC-AC inverters ## **Features** - Low QRR, Low IRRM, Low tRR - High dIF/dt capable (1000A/µs) - Soft recovery ## **TO-220AB TO-263AB** > **LQA40T200C A** ~~**1**~~ **LQA40B200C K A2** ## RoHS Compliant Package uses Lead-free plating and “Green” mold compound Halogen free per IEC 61249-2-21. ## **Benefits** - Increases efficiency - Eliminates need for snubber circuits - Reduces EMI filter component size and count - Enables extremely fast switching ## **Absolute Maximum Ratings** Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. |**Symbol**<br>~~a~~|**Parameter**<br>|**Conditions**<br>|**Rating**<br>|**Units**<br>| |---|---|---|---|---| |VRRM<br>~~eG~~|Peak repetitive reverse voltage<br>~~eG~~|TJ= 25 °C<br>~~eG~~|200<br>~~eG~~|V<br>~~eG~~| |IF(AVG)<br>~~a eG~~|Average forward current<br>~~eG~~|Per Diode,TJ= 150 °C,TC= 116 °C<br>~~eG~~|20<br>~~eG~~|A<br>~~eG~~| |~~eG~~|~~eG~~|Per Device,TJ= 150 °C,TC= 116 °C<br>~~eG~~|40<br>~~eG~~|A<br>~~eG~~| |IFSM<br>~~a eG~~<br>~~ee~~|Non-repetitivepeak surge current<br>~~eG~~<br>~~ee~~|Per Diode,60 Hz,½ cycle<br>~~eG~~<br>~~ee~~|170<br>~~eG~~|A<br>~~eG~~| |IFSM<br>~~ee~~|Non-repetitive peak surge current<br>~~ee~~|Per Diode, ½ cycle of t = 28µs<br>Sinusoid,TC= 25 °C<br>~~ee~~|350|A| |TJ<br>~~ee~~<br>~~a~~|Operating junction temperature range<br>~~ee ~~|~~ee~~|–55 to 150|°C| |TSTG<br>~~a~~|Storage temperature||–55 to 150|°C| |~~a D~~|Lead solderingtemperature<br>~~D~~|Leads at 1.6mm from case,10 sec<br>~~D~~|300<br>~~D~~|°C<br>~~D~~| |PD<br>~~a D~~|Power dissipation<br>~~D~~|TC= 25 °C<br>~~D~~|65.8<br>~~D~~|W<br>~~D~~| ## **Thermal Resistance** |**Symbol**|**Resistance from:**|**Conditions**|**Rating**|**Units**| |---|---|---|---|---| |RθJA|Junction to ambient|TO-220AB(only)|62|°C/W| |RθJC|Junction to case|Per Diode|1.9|°C/W| |||Per Device|1.0|°C/W| January 2015 www.power.com ~~P~~ **LQA40T200C, LQA40B200C** e |**Symbol**<br>~~a~~|**Parameter**<br>~~es~~|**Conditions**<br>~~es~~|**Conditions**<br>~~es~~|**Min**<br>~~ts~~|**Typ**<br>~~es~~|**Max**<br>~~esee~~|**Units**| |---|---|---|---|---|---|---|---| |**DC Characteristicsper diode**<br>~~a~~<br>~~es es ts es ee~~<br>~~aeecerry~~<br>~~ereseresereseee~~<br>~~ee~~|||||||| |IR<br>~~a~~<br>~~ee~~|Reverse current per diode<br>~~ee~~|VR= 200 V, TJ= 25 °C<br>~~cerry~~||-<br>~~cerry~~<br>~~eres~~|-<br>~~cerry~~<br>~~eres~~|500<br>~~cerry~~<br>~~ereseres~~|µA<br>~~cerry~~<br>~~eee~~| |||VR= 200 V,TJ= 125 °C<br>~~cerry~~||-<br>~~cerry~~<br>~~eres~~|1.0<br>~~cerry~~<br>~~eres~~|-<br>~~cerry~~<br>~~ereseres~~|mA<br>~~cerry~~<br>~~eee~~| |VF<br>~~a ~~<br>~~ee~~<br>~~Sn~~|Forward voltage per diode<br> ~~ee~~<br>~~OO~~|IF= 20 A,TJ= 25 °C<br>~~cerry~~||-<br>~~cerry~~<br>~~eres~~|1.0<br>~~cerry~~<br>~~eres~~|1.2<br>~~cerry~~<br>~~ereseres~~|V<br>~~cerry~~<br>~~eee~~| |||IF= 20 A,TJ= 150 °C<br>~~OO~~||-<br>~~eres~~<br>~~OO~~|0.875<br>~~eres~~<br>~~OO~~|-<br>~~ereseres~~<br>~~OO~~|V<br>~~eee~~<br>~~OO~~| |CJ<br>~~ee~~<br>~~Sn~~|Junction capacitance per<br>diode<br>~~OO~~|VR= 10 V, 1 MHz<br>~~OO~~||-<br>~~eres ~~<br>~~OO~~|74<br> ~~eres~~<br>~~OO~~|-<br>~~eres eres ~~<br>~~OO~~|pF<br> ~~eee~~<br>~~OO~~| |**Dynamic Characteristics per diode**<br>~~SnOO~~|||||||| |tRR<br>~~ee~~|Reverse recovery time,<br>per diode<br>~~ee~~|dIF/dt = 200 A/µs<br>VR= 130 V,<br>IF= 20 A<br>~~es~~<br>|TJ= 25 °C|-|17|-|ns| ||||TJ= 125 °C<br>~~es~~<br>|-<br><br>|27<br>~~ee~~<br>|-<br>~~ee~~|ns<br>~~ee~~| |QRR<br>~~ee~~<br>~~ee~~|Reverse recovery charge,<br>per diode<br>~~ee~~<br>~~ee~~|dIF/dt = 200 A/µs<br>VR= 130 V,<br>IF= 20 A<br>~~ee~~<br>~~es~~<br>|TJ= 25 °C<br>~~ee~~<br>~~es~~<br>|-<br>~~ee~~<br><br>|22<br>~~ee~~<br>~~ee~~<br>|34<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~| ||||TJ= 125 °C<br>~~ee~~<br>~~es~~<br>|-<br>~~ee~~<br><br>|61<br>~~ee~~<br>~~ee~~<br>|-<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~| |IRRM<br>~~ee~~<br>~~ee~~|Maximum reverse<br>recovery current, per<br>diode<br>~~ee~~<br>~~ee ~~|dIF/dt = 200 A/µs<br>VR= 130 V,<br>IF= 20 A<br>~~ee~~<br>~~es~~<br> ~~ee~~<br>~~ee~~|TJ= 25 °C<br>~~ee~~<br>~~es~~<br>~~ee~~|-<br>~~ee~~<br><br>~~ee~~|2.14<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.15<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~| ||||TJ= 125 °C<br>~~es ~~<br>~~ee~~<br>~~es~~|-<br> <br>~~ee~~<br>~~ee~~|3.7<br> ~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|A<br>~~ee~~| |S<br><br>~~ee~~|Softness per diode =<br>a<br>b<br>t<br>t<br> <br>~~ee~~|dIF/dt = 200 A/µs<br>VR= 130 V,<br>IF= 20 A<br> ~~ee~~<br>~~ee~~<br>~~ee~~|TJ= 25 °C<br>~~ee~~<br>~~ee~~<br>~~es~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.45<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|~~ee~~| ||||TJ= 125 °C<br>~~ee~~<br>~~es~~|-<br>~~ee~~<br>~~ee~~|0.32<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|~~ee~~| **==> picture [452 x 137] intentionally omitted <==** **----- Start of picture text -----**<br> VR<br>D1<br>L1 DUT<br>IF tRR 15V<br>dIF/dt Pulse generator + Rg<br>ta tb Q1<br>0<br>0.1xIRRM<br>IRRM<br>**----- End of picture text -----**<br> **Figure 1. Reverse Recovery Definitions** **Figure 2. Reverse Recovery Test Circuit** 2 ~~|~~ Rev 1.1 01/15 www.power.com ~~P~~ **LQA40T200C, LQA40B200C** | ## **Electrical Specifications at TJ = 25 ° C (unless otherwise specified)** **==> picture [442 x 476] intentionally omitted <==** **----- Start of picture text -----**<br> 40 1.0<br>35 Tj=125C 0.9 Tj=125C<br>0.8<br>30<br>0.7<br>25 poT= YoVf 0.6 eePS eyveeee<br>20 Tj=25C 0.5<br>15 Po fe Sf 0.4 e e eyeee<br>0.3<br>10 Tj=25C<br>Of 0.2 ee)<br>5 ee fo 0.1 f f<br>0 ee 4) Ae eee 0.0 e e Anny e e A eee<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>VF (V) VF (V)<br>Figure 3. Typical IF vs VF Figure 4. Typical IF vs VF<br>300 55<br>50<br>250 Tf | tt tt yy 45 SS<br>40<br>200 P| | | EE ET 35 ee<br>30<br>150<br>Pip te tt ty 25 ee e e<br>100 KEE) 20 ee<br>15<br>50 10<br>SH | ee NS<br>5<br>0 | Co }) FR 0 PN<br>0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150<br>VR (V) Case Temperature, TC ( [o] C)<br>Figure 5. Typical Cj vs VR Figure 6. DC Current Derating Curve<br>140 35<br>dIF/dt=500A/us<br>120 30 dIF/dt=200A/us<br>100 e r ee 25 RC —<br>80 20 dIF/dt=500A/us<br>60 | 7 | 15 LF<br>40 dIF/dt=200A/us 10<br>20 5<br>0 Faee ee ee ee |) Ree 0 ee<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>IF (A) IF (A)<br>(A) (A)<br>IF IF<br>C(pF)j (A)IF(AV)<br> (nC) (ns)<br>QRR tRR<br>**----- End of picture text -----**<br> **Figure 7. Typical QRR vs IF at Tj=125 °C** **Figure 8. Typical tRR vs IF at Tj=125 °C** Rev 1.1 01/15 www.power.com 3 ~~a~~ **LQA40T200C, LQA40B200C** e **==> picture [442 x 128] intentionally omitted <==** **----- Start of picture text -----**<br> 70 55<br>6050 504540 eeeNNpoeeeeee duty cycle=10%duty cycle=30%<br>40 35 a aeEONKR NN duty cycle=50%DC<br>30 Po NN4<br>30 25 po<br>20 2015 PoPoNNNATNAY<br>100 105 aa eeeeeeeeNN A|<br>25 50 75 100 125 150 0 po NN\<br>25 50 75 100 125 150<br>Case Temperature, TC ( [o] C) TC( ° C)<br>P (W) (PEAK) (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 9. Power Derating Curve** **Figure 10. IF (Peak) vs TC, f = 70 kHz** ## LQA40x200C **==> picture [452 x 287] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D= 0.5<br>D = 0.3<br>D= 0.1<br>0.1 D= 0.05<br>D= 0.02<br>D= 0.01<br>D=0.005<br>f p<br>0.01 D=0.002<br>Single Pulse a<br>Notes:<br>2. Peak Ty=P py X Zthuc + Tc<br>0.001 ee<br>1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00<br>t1(sec)<br>Zth(j-c)/Rth(j-c)<br>**----- End of picture text -----**<br> **Figure 11. Normalized Maximum Transient Thermal Impedance** 4 a Rev 1.1 01/15 www.power.com ~~e~~ **LQA40T200C, LQA40B200C** e ## **Dimensional Outline Drawings** TO-220AB **E A A1 Millimeters** _— —— zh ~~ee~~ **Dim MIN MAX** ~~ee~~ **Q øP A** 4.32 4.70 **A1** 1.11 1.38 ~~ee~~ **D A2** 2.59 2.79 ~~ee ee ee~~ **b** 0.77 1.00 ~~ee~~ **D1 b2** 1.23 1.36 ~~ee ee ee~~ **C** 0.34 0.47 ~~ee~~ **D** 14.71 15.75 ~~ee~~ — ~~ee~~ **D1** 9.05 9.25 ~~ee~~ **b2** . **L1** ~~ee 4~~ **E** 9.96 10.36 ~~ee ee ee~~ **e** 2.44 2.64 ~~ee ee~~ **L e1** 4.98 5.18 ~~ee~~ **b** ~~ee~~ **L** 12.70 14.22 ~~ee~~ **c L1** – 3.90 ~~ee~~ | ~~ee~~ mod **e e1** * **A2** ~~ee~~ **ØP** 3.71 3.96 ~~eeee~~ **Q** 2.54 2.90 ~~ee~~ **Mechanical Mounting Method Maximum Torque / Pressure specification** Screw through hole in package tab 1 Newton Meter (nm) or 8.8 inch-pounds (lb-in) Clamp against package body 12.3 kilogram-force per square centimeter (kgf/cm[2] ) or 175 lbf/in[2] TO-263AB |~~ee~~|**Millimeters**<br>~~ee~~|**Millimeters**<br>~~ee~~| |---|---|---| |**Dim**<br>~~ee~~|**MIN**<br>~~ee~~|**MAX**<br>~~ee~~| |**A**<br>~~ee~~|4.40<br>~~ee~~|4.70<br>~~ee~~| |**A1**|0.00|0.25| |**A2**<br>~~ee~~|2.59<br>~~ee~~<br>~~ee~~|2.79<br>~~ee~~| |**b**<br>~~ee~~|0.77<br>~~ee~~<br>~~ee~~|0.90<br>~~ee~~| |**b2**<br>~~ee~~<br>~~ee~~|1.23<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.36<br>~~ee~~<br>~~ee~~<br>~~ee~~| |**c2**<br>~~ee~~|1.22<br>~~ee~~|1.32<br>~~ee~~<br>~~ee~~| |**D**<br>~~ee~~|9.05<br>~~ee~~|9.25<br>~~ee~~<br>~~ee~~| |**E**<br>~~ee~~|10.06<br>~~ee~~|10.26<br>~~ee~~| |**e**<br>~~ee~~|2.54 BSC<br>~~ee~~|2.54 BSC<br>~~ee~~| |**H**<br>~~ee~~|14.70<br>~~ee~~|15.50<br>~~ee~~| |**L**<br>~~ee~~|2.00<br>~~ee~~|2.60<br>~~ee~~| |**L1**<br>~~ee~~<br>~~ee~~|1.17<br>~~ee~~<br>~~ee~~|1.40<br>~~ee~~<br>~~ee~~| |**L2**<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.75<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~| |**L3**<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.25 BSC<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.25 BSC<br>~~ee~~<br>~~ee~~<br>~~ee~~| |**L4**<br>~~ee~~<br>~~ee~~|2.00 BSC<br>~~ee~~<br>~~ee~~|2.00 BSC<br>~~ee~~<br>~~ee~~| |**Θ**<br>~~ee~~<br>~~ee~~|0°<br>~~ee~~<br>~~ee~~|8°<br>~~ee~~<br>~~ee~~| |**Θ1 **<br>~~ee~~|5°<br>~~ee~~|9°<br>~~ee~~| |**Θ2 **<br>~~ee~~<br>~~ee~~|1°<br>~~ee~~<br>~~ee~~|5°<br>~~ee~~<br>~~ee~~| 5 ~~r~~ POWEr — Rev 1.1 01/15 www.power.com ~~P~~ **LQA40T200C, LQA40B200C** O **Soldering time and temperature:** This product has been designed for use with hightemperature, lead-free solder. The component leads can be subjected to a maximum temperature of 300 °C, for up to 10 seconds. See Application Note AN-303, for more details. ## **Ordering Information** |**Part Number**|**Package **|**Packing**| |---|---|---| |LQA40T200C|TO-220AB|50 units/tube| |LQA40B200C|TO-263AB|800 units/reel| **The information contained in this document is subject to change without notice.** ~~a~~ 6 Rev 1.1 01/15 www.power.com P| **LQA40T200C, LQA40B200C** |**Revision**|**Notes**|**Date**| |---|---|---| |1.0|Initial Release|04/13| |1.1|Updated with New Logo and New Homepage Address. Corrected Part<br>Numbers in Ordering Information Table.|01/15| 7 ~~|~~ Rev 1.1 01/15 www.power.com ~~e~~ **LQA40T200C, LQA40B200C** s ## **For the latest updates, visit our website: www.power.com** Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS. ## **PATENT INFORMATION** The products and applications illustrated herein (including transformer construction and circuits’ external to the products) may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at www.power.com. Power Integrations grants its customers a license under certain patent rights as set forth at http://www.power.com/ip.htm. The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, LYTSwitch, InnoSwitch, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero, HiperPFS, HiperTFS, HiperLCS, Qspeed, EcoSmart, Clampless, E-Shield, Filterfuse, FluxLink, StackFET, PI Expert and PI FACTS are trademarks of Power Integrations, Inc. Other trademarks are property of their respective companies. ©Copyright 2015 Power Integrations, Inc. ## **Power Integrations Worldwide Sales Support Locations** ## **WORLD HEADQUARTERS** 5245 Hellyer Avenue San Jose, CA 95138, USA. Main: +1-408-414-9200 Customer Service: Phone: +1-408-414-9665 Fax: +1-408-414-9765 e-mail: usasales@power.com ## **GERMANY** Lindwurmstrasse 114 80337, Munich Germany Phone: +49-895-52739110 Fax: +49-895-527-39200 e-mail: eurosales@power.com ## **JAPAN** Kosei Dai-3 Building 2-12-11, Shin-Yokohama, Kohoku-ku, Yokohama-shi, Kanagawa 222-0033 Japan Phone: +81-45-471-1021 Fax: +81-45-471-3717 e-mail: japansales@power.com ## **TAIWAN** 5F, No. 318, Nei Hu Rd., Sec. 1 Nei Hu District Taipei 11493, Taiwan R.O.C. Phone: +886-2-2659-4570 Fax: +886-2-2659-4550 e-mail: taiwansales@power.com ## **CHINA (SHANGHAI)** Rm 2410, Charity Plaza, No. 88, North Caoxi Road, Shanghai, PRC 200030 Phone: +86-21-6354-6323 Fax: +86-21-6354-6325 e-mail: chinasales@power.com ## **INDIA** #1, 14[th] Main Road Vasanthanagar Bangalore-560052 India Phone: +91-80-4113-8020 Fax: +91-80-4113-8023 e-mail: indiasales@power.com ## **KOREA** RM 602, 6FL Korea City Air Terminal B/D, 159-6 Samsung-Dong, Kangnam-Gu, Seoul, 135-728 Korea Phone: +82-2-2016-6610 Fax: +82-2-2016-6630 e-mail: koreasales@power.com ## **UK** First Floor, Unit 15, Meadway Court, Rutherford Close, Stevenage, Herts. SG1 2EF United Kingdom Phone: +44 (0) 1252-730-141 Fax: +44 (0) 1252-727-689 e-mail: eurosales@power.com ## **CHINA (SHENZHEN)** 17/F, Hivac Building, No. 2, Keji Nan 8th Road, Nanshan District, Shenzhen, China, 518057 Phone: +86-755-8672-8689 Fax: +86-755-8672-8690 e-mail: chinasales@power.com ## **SINGAPORE** ## **ITALY** Via Milanese 20, 3[rd] . Fl. 51 Newton Road, 20099 Sesto San Giovanni #19-01/05 Goldhill Plaza (MI) Italy Singapore, 308900 Phone: +39-024-550-8701 Phone: +65-6358-2160 Fax: +39-028-928-6009 Fax: +65-6358-2015 e-mail: e-mail: eurosales@power.com singaporesales@power.com ## **APPLICATIONS HOTLINE** World Wide +1-408-414-9660 ## **APPLICATIONS FAX** World Wide +1-408-414-9760 8 Rev 1.1 01/15 www.power.com
Updated at June 4, 2026
Power Integrations is a leading innovator in semiconductor technologies dedicated to high-voltage power conversion. Renowned for advancing the clean-power ecosystem, the company designs highly integrated chips that maximize energy efficiency across a vast range of consumer and industrial applications. Through proprietary advancements like PowiGaN gallium-nitride technology and EcoSmart energy-efficiency solutions, their components deliver exceptional performance while significantly reducing global energy waste. A major focus of their product lineup includes discrete semiconductors, particularly fast and ultrafast recovery rectifier diodes. These essential components provide the high-speed switching and exceptional reliability required for modern power supply designs. By minimizing power loss and thermal output, they ensure efficient power transmission in demanding, high-efficiency circuit environments. Furthermore, Power Integrations is a premier manufacturer of specialized LED lighting components. Their advanced AC/DC LED driver ICs offer engineers streamlined, energy-efficient solutions for solid-state lighting applications. By integrating critical control and protection features into a single footprint, these drivers reduce the overall component count and accelerate the development of reliable, high-performance commercial and consumer lighting systems.
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