KSP42TA

Bipolar (BJT) Single Transistor, NPN, 300 V, 500 mA, 625 mW, TO-226AA, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:25hFE
MSL: -
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 625mW
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 50MHz
Transistor Case Style: TO-226AA
DC Current Gain hFE Min: 25hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 500mA
Collector Emitter Voltage Max: 300V

Delivery and price
Units per pack	2000
Price	0.036 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026