KSE13003H2ASTU

Bipolar (BJT) Single Transistor, NPN, 400 V, 1.5 A, 20 W, TO-225AA, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:4MHz; Power Dissipation Pd:20W; DC Collector Current:1.5A; DC Current Gain hFE:14hFE; Tr
MSL: -
SVHC: Lead (27-Jun-2024)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 20W
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 4MHz
Transistor Case Style: TO-225AA
DC Current Gain hFE Min: 14hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 1.5A
Collector Emitter Voltage Max: 400V

Delivery and price
Units per pack	1920
Price	0.359 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026