KSC2383YTA

Bipolar (BJT) Single Transistor, NPN, 160 V, 1 A, 900 mW, TO-92L, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:100MHz; Power Dissipation Pd:900mW; DC Collector Current:1A; DC Current Gain hFE:160hFE; T
MSL: -
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 900mW
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 100MHz
Transistor Case Style: TO-92L
DC Current Gain hFE Min: 160hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 1A
Collector Emitter Voltage Max: 160V

Delivery and price
Units per pack	1000
Price	0.132 €
Current stock	50+
Lead time	7 days

Datasheet

Updated at March 14, 2026