Illustrative purposes only
KSC2316YTA
Bipolar (BJT) Single Transistor, NPN, 120 V, 800 mA, 900 mW, TO-92L, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Power Dissipation: 900mW
- DC Current Gain hFE: 60hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- DC Collector Current: 800mA
- Power Dissipation Pd: 900mW
- Transition Frequency: 120MHz
- Transistor Case Style: TO-92L
- DC Current Gain hFE Min: 60hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 800mA
- Collector Emitter Voltage Max: 120V
- Collector Emitter Voltage V(br)ceo: 120V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.062 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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