KSB772YSTU

Bipolar (BJT) Single Transistor, PNP, 30 V, 3 A, 10 W, TO-126, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:80MHz; Power Dissipation Pd:10W; DC Collector Current:-3A; DC Current Gain hFE:30hFE; Tran
MSL: -
SVHC: No SVHC (23-Jan-2024)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 10W
Transistor Mounting: Through Hole
Transistor Polarity: PNP
Transition Frequency: 80MHz
Transistor Case Style: TO-126
DC Current Gain hFE Min: 30hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 3A
Collector Emitter Voltage Max: 30V

Delivery and price
Units per pack	1
Price	0.774 €
Current stock	200+
Lead time	7 days

Datasheet

Updated at March 14, 2026