J113-D74Z
JFET Transistor, -35 V, -3 V, TO-92, 3 Pin, 150 °C
- Manufacturer: ONSEMI
- Product type: JFETs
- Breakdown Voltage Vbr:-35V; Zero Gate Voltage Drain Current Idss Min:2mA; Zero Gate Voltage Drain Current Idss Max:-; Gate-Source Cutoff Voltage Vgs(off) Max:-3V; Transistor Case Style:TO-92;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3 Pin
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Type: JFET
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-92
- Operating Temperature Max: 150°C
- Gate Source Cutoff Voltage Max: -3V
- Gate Source Breakdown Voltage Max: -35V
- Zero Gate Voltage Drain Current Max: -
- Zero Gate Voltage Drain Current Idss Min: 2mA
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.12 € |
| Current stock | 500+ |
| Lead time | 30 days |
Final Product/Process Change Notification Document #:FPCN23842X Issue Date:08 Feb 2021 |**Title of Change:**|Transfer of Assembly and Test site operations of Small Signal Junction Field Effect Transistor<br>devices in TO-92 from AUKD (China) to JCET(China).|Transfer of Assembly and Test site operations of Small Signal Junction Field Effect Transistor<br>devices in TO-92 from AUKD (China) to JCET(China).| |---|---|---| |**Proposed First Ship date:**|17 May 2021 or earlier if approved by customer|| |**Contact Information:**|Contact your local ON Semiconductor Sales Office orJason.Choy@onsemi.com|| |**PCN Samples Contact:**|Contact your local ON Semiconductor Sales Office or <PCN.samples@onsemi.com>.<br>Sample requests are to be submitted no later than 30 days from the date of first notification,<br>Initial PCN or Final PCN, for this change.<br>Samples delivery timing will be subject to request date, sample quantity and special customer<br>packing/label requirements.|| |**Additional Reliability Data:**|Contact your local ON Semiconductor Sales Office orYasuhiro.Igarashi@onsemi.com|| |**Type of Notification:**|This is a Final Product/Process Change Notification (FPCN) sent to customers. FPCNs are issued 90<br>days prior to implementation of the change.<br>ON Semiconductor will consider this change accepted, unless an inquiry is made in writing within<br>30 days of delivery of this notice. To do so, contactPCN.Support@onsemi.com|| |**Marking of Parts/ Traceability of**<br>**Change:**|Customer may receive the parts from JCET once FPCN expired or earlier depending on customer<br>approval. Parts from new assembly & test site can be identified through product marking which<br>follow ON Semiconductor marking format.|| |**Change Category:**|Test Change, Assembly Change|| |**Change Sub-Category(s):**|Manufacturing Site Transfer|| |**Sites Affected:**<br>~~—_———~~||| |**ON Semiconductor Sites**<br>~~—_———~~||**External Foundry/Subcon Sites**<br>~~—_———~~| |None<br>~~—_———~~||AUK Corporation, Korea<br>~~—_———~~| |<br>~~—_———~~||JCET, China<br>~~—_———~~| |**Description and Purpose:**<br>This final notification announces the transfer of Assembly and Test Site on the Junction Field Effect Transistor packaged in TO-92 from AUKD (China)<br>to JCET (China).<br>This change was resulted from AUKD (China) Assembly and Test site closure. The new site in JCET has been an existing qualified manufacturing site<br>for ON Semiconductor which certified with IATF 16949:2016.<br>Products listed in this notification will continue to be Pb‐free, Halide free and RoHS compliant. Qualification tests are designed to show that the<br>reliability of the transferred devices will continue to meet or exceed ON Semiconductor standard.<br>**Site Change:**<br>**Before Change**<br>**After Change**<br>Assembly Location<br>AUK, China<br>JCET, China<br>Final Test Location<br>AUK, China<br>JCET, China<br>~~—_———~~||| This change was resulted from AUKD (China) Assembly and Test site closure. The new site in JCET has been an existing qualified manufacturing site for ON Semiconductor which certified with IATF 16949:2016. Products listed in this notification will continue to be Pb‐free, Halide free and RoHS compliant. Qualification tests are designed to show that the reliability of the transferred devices will continue to meet or exceed ON Semiconductor standard. ## **Site Change:** ||**Before Change**|**After Change**| |---|---|---| |Assembly Location|AUK, China|JCET, China| |Final Test Location|AUK, China|JCET, China| Page 1 of 3 TEM001793 Rev. D Final Product/Process Change Notification Document #:FPCN23842X Issue Date:08 Feb 2021 **TO92 Piece Part Change : Before Change After Change** LeadFrame CuAg STAMPED No Change Die Attach Eutectic No Change Wire Au wire No Change Mold Compound Changchun EME 2500 D3 HHCK EMG-200 **Reliability Data Summary:** QV DEVICE NAME : J109 PACKAGE : TO-92 RMS : S58670 **Test Specification Condition Interval Results** HTRB JESD22-A108 Ta=150°C, 100 % max rated V 504 hrs 0/231 H3TRB JESD22-A101 Ta=85°C, 85% / 80% max rated V 504 hrs 0/231 HTSL JESD22-A103 Ta= 150°C 504 hrs 0/231 UHAST JESD22-A118 Ta= 130°C, 85% RH, 18.8psig, unbiased 96 hrs 0/231 TC JESD22-A104 Ta= -55°C to 150°C 1000 cyc 0/231 MIL STD750 Ta=+25°C, deltaTj=100°C IOL (M1037) 7500 cyc 0/231 On/Off = 2 min AEC Q101 PC J-STD-020 JESD-A113 MSL 1 @ 260 °C RSH JESD22- B106 Ta = 260C, 10 sec 0/30 **Electrical Characteristics Summary:** Electrical characteristics are not impacted. ~~=~~ **List of Affected Parts:** _**Note:** Only the standard (off the shelf) part numbers are listed in the parts list. Any custom parts affected by this PCN are shown in the customer specific PCN addendum in the PCN email notification, or on the_ _**PCN Customized Portal.**_ |**Part Number**|**Qualification Vehicle**| |---|---| |J58|J109| |J111-D26Z|J109| |J111-D74Z|J109| |J112-D26Z|J109| |J112-D27Z|J109| |J112-D74Z|J109| |J113-D74Z|J109| |J109-D26Z|J109| TEM001793 Rev. D Page 2 of 3 ## Final Product/Process Change Notification Document #:FPCN23842X Issue Date:08 Feb 2021 |J176-D74Z|J109| |---|---| |J111|J109| |J112|J109| |J113|J109| |J109|J109| |J175-D26Z|J109| |J211-D74Z|J109| |BF256B|J109| Page 3 of 3 TEM001793 Rev. D
Updated at April 29, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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