J109

## **Is Now Part of** 

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## **J109 / MMBFJ108 N-Channel Switch** 

## **Features** 

- This device is designed for digital switching applications 

- where very low on resistance is mandatory. 

- Sourced from process 58 

**==> picture [88 x 81] intentionally omitted <==**

**----- Start of picture text -----**<br>
DP TO-92<br>1<br>1. Drain   2. Source   3. Gate<br>**----- End of picture text -----**<br>


**==> picture [154 x 270] intentionally omitted <==**

**----- Start of picture text -----**<br>
January 2015<br>3<br>2<br>WA 1 SuperSOT-3<br>Marking: I8<br>1. Drain   2. Source  3. Gate<br>**----- End of picture text -----**<br>


**Figure 1. J109 Device Package** 

**Figure 2. MMBFJ108 Device Package** 

## **Ordering Information** 

|**Part Number**|**Top Mark**|**Package**|**Package**|**Packing Method**|
|---|---|---|---|---|
|J109|J109|TO-92 3L|TO-92 3L|Bulk|
|J109_D26Z|J109|TO-92 3L|TO-92 3L|Tape and Reel|
|MMBFJ108|I8|SSOT 3L|SSOT 3L|Tape and Reel|



## **Absolute Maximum Ratings**[(1), (2)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDG|Drain-Gate Voltage|25|V|
|VGS|Gate-Source Voltage|-25|V|
|IGF|Forward Gate Current|10|mA|
|TJ, TSTG|Operating and Storage Junction Temperature Range|-55 to 150|°C|



## **Notes:** 

1. These ratings are based on a maximum junction temperature of 150 ° C. 

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. 

© 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 

www.fairchildsemi.com 

## **Thermal Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Max.**|**Max.**|**Unit**|
|---|---|---|---|---|
|||**J109**(3)|**MMBFJ108**(4)||
|PD|Total Device Dissipation|625|350|mW|
||Derate Above 25°C|5.0|2.8|mW/°C|
|RθJC|Thermal Resistance, Junction-to-Case|125||°C/W|
|RθJA|Thermal Resistance, Junction-to-Ambient|200|357|°C/W|



## **Notes:** 

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 

4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm[2] . 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Conditions**|**Conditions**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**Off Characteristics**|||||||
|V(BR)GSS|Gate-Source Breakdown Voltage|IG= -10μA, VDS= 0||-25||V|
|IGSS|Gate Reverse Current|VGS= -15 V, VDS= 0|||-3.0|nA|
|||VGS= -15 V, VDS= 0, TA= 100°C|||-200||
|VGS(off)|Gate-Source Cut-Off Voltage|VDS= 15 V, ID= 10 nA|MMBFJ108|-3.0|-10.0|V|
||||J109|-2.0|-6.0||
|**On Characteristics**|||||||
|IDSS|Zero-Gate Voltage Drain Current(5)|VDS= 15 V, VGS= 0|MMBFJ108|80||mA|
||||J109|40|||
|rDS(on)|Drain-Source On Resistance|VDS ≤0.1 V, VGS= 0|MMBFJ108||8.0|Ω|
||||J109||12||
|**Small Signal Characteristics**|||||||
|Cdg(on)<br>Csg(off)|Drain-Gate &Source-Gate On<br>Capacitance|VDS= 0, VGS= 0, f = 1.0 MHz|||85|pF|
|Cdg(off)|Drain-Gate Off Capacitance|VDS= 0, VGS= -10 V, f = 1.0 MHz|||15|pF|
|Csg(off)|Source-Gate Off Capacitance|VDS= 0, VGS= -10 V, f = 1.0 MHz|||15|pF|



## **Note:** 

5. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2%. 

© 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

**==> picture [424 x 531] intentionally omitted <==**

**----- Start of picture text -----**<br>
Common Drain-Source Parameter Interactions<br>100 V      = 0 VGS - 2.0 V 100 I       @ V     = 5.0V, V     = 0 PULSEDDSS DS GS 1,000<br>50 r     @ V     = 100mV, V     = 0DS DS GS 500<br>80<br>- 1.0 V - 3.0 V V           @ V      = 5.0V, I     = 3.0 nA GS(off) DS D<br>a (Aseae + | sa nnaA<br>60 r DS<br>y/o A 10 Sill 100<br>40 | IWF | | | ft ——— Se ae eee<br>- 4.0 V 5 50<br>— T   = 25A 캜 ° C “a I DSS<br>20 TYP   V            = - 5.0 VGS(off)<br>WZ - 5.0 V TJ ell BBall<br>0 Bok PCE Eel 10<br>0 0.4 0.8 1.2 1.6 2 _ 0.1 _ 0.5 _ 1 _ 5 _ 10<br>V    - DRAIN-SOURCE VOLTAGE (V)DS V             - GATE CUTOFF VOLTAGE (V)GS (OFF)<br>Figure 3. Common Drain-Source Figure 4. Parameter Interactions<br>100 50<br>f = 0.1 - 1.0 MHz T   = 25A<br>—————_——— 40 TYP   V             GS(off) = - 0.7 V ttt<br>RE C iss (V      =  DS 5.0V) SEES<br>30<br>ae FE EEE EEE<br>V      = 0 VGS<br>10<br>at C       (V      = 0 ) rss DS 20 PP, - 0.1 V  EE<br>== eee - 0.2 V - 0.3 V - 0.4 V - 0.5 V<br>10<br>Sf ee<br>=<br>PELE 0 (Z25s===2=-—y— En 0 ee eee<br>0 -4 -8 -12 -16 -20 0 1 2 3 4 5<br>V     - GATE-SOURCE VOLTAGE (V)GS V    - DRAIN-SOURCE VOLTAGE (V)DS<br>Figure 5. Common Drain-Source Figure 6. Common Drain-Source<br>100<br>100 V      DG = 10V<br>50 V             @ 5.0V, 10 GS(off) μ A 50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz<br>       = 0.21 @ f  ≥  1.0 kHz<br>r DS<br>20 r     = DS 1  -   ________V GS ee ee ee) a aa ll<br>10 x V GS(off) EEEye 10 SU EN<br>5<br>5<br>I     = 1. D 0 mA<br>2<br>I     = 10 mA D<br>1<br>0 eee 0.2 0.4 0.6 0.8 1 1 Fey PT<br>V    /V        - NORMALIZED GATE-SOURCE VOLTAGE (V)GS GS(off) 0.01 0.03 0.1 0.5 1 2 10 100<br>f - FREQUENCY (kHz)<br>)( Ω<br>DSS<br>I     - DRAIN CURRENT (mA)D I       - DRAIN CURRENT (mA)<br>DS<br>r     - DRAIN "ON" RESISTANCE<br>rs<br>D<br>ts I     - DRAIN CURRENT (mA)<br>C     (C     ) - CAPACITANCE (pF)<br>√<br>DS n<br>r      - NORMALIZED RESISTANCE e    - NOISE VOLTAGE (nV /   Hz)<br>**----- End of picture text -----**<br>


**Figure 7. Normalized Drain Resistance vs. Bias Voltage** 

**Figure 8. Noise Voltage vs. Frequency** 

© 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 

www.fairchildsemi.com 

3 

## **Typical Performance Characteristics** (Continued) 

## **Switching Turn-On Time vs** 

## **Switching Turn-On Time** 

**==> picture [413 x 136] intentionally omitted <==**

**----- Start of picture text -----**<br>
Gate-Source Cutoff Voltage vs Drain Current<br>10 50<br>T   = 25A ° 캜 C<br>i a<br>8 V      = 1.5VDD a 40<br>V             =  - 8.5VGS(off)<br>6 V            = - 12V GS(off) ia 30 rePINT V              GS(off) = - 5.5V __<br>I     = 30 mA D V             =  - 3.5V GS(off)<br>4 ptt,se I     = 10 mA D FS 20 DPSSNS ISNNT T   = 25 A 캜 ° C __<br>2 SSR 10 V      = 1.5VDD Ss<br>= =a= =<br>V            = - 12V GS(off)<br>0 0 a -2 -4 -6 -8 -10 0 0 5 i 10 15 20 25<br>V           - GATE-SOURCE CUTOFF VOLTAGE (V)GS(off)GS(off) I    - DRAIN CURRENT (mA)D<br>t      - TURN-ON TIME (ns)ONON OFF<br>t       - TURN-OFF TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 9. Switching Turn-On Time vs. Gate-Source Cut-Off Voltage** 

**Figure 10. Switching Turn-On Time vs. Drain Current** 

**==> picture [418 x 336] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>100<br>50 V       = 0 GS V       DG = 5.0V<br>10V<br>V            = - 3.0V GS(off)125 VGS(off) 5.0V 15V 20V<br>- 4.0V<br>10 Seera eeeee) 125 10 eeete 10V 15V 10V eae 5.0V ttt<br>5 25 wet - 2.0V 20V il) 15V Zzallllll<br>20V<br>25 V             GS(off) - 55 = - 5.0V T    = 25A<br>- 1.0V f = 1.0 kHz<br>1 Salmann all mull 10.1 omTT 1 i. 10 |<br>1 10 100<br>I    - DRAIN CURRENT (mA)D<br>I    - DRAIN CURRENT (mA)D<br>Figure 11. On Resistance vs. Drain Current Figure 12. Output Conductance vs. Drain Current<br>100<br>T   = 25A T    A = - 55 700<br>V      = 10VDG T    = 25A 600<br>f = 1.0 kHz T    =  125A 500<br>a eae oS T O -92<br>10 400 S uperS O T-3<br>me V             =  - 1.0V GS(off) zailllll 300 RPS<br>pt V             =  - 3.0VV             =  - 5.0VGS(off)GS(off) tH 200100 PRN<br>10.1 alii 1 ail 10 0 0 a 25 50 75 100 125 150<br>I    - DRAIN CURRENT (mA)D TE M P E R A TU R E  ( oC )<br>)( Ω<br>μ<br>DS<br>r       - DRAIN "ON" RESISTANCE<br>os<br>g      - OUTPUT CONDUCTANCE (   mhos)<br>fs  - POWER DISSIPATION(mW)PD<br>g     - TRANSCONDUCTANCE (mmhos)<br>**----- End of picture text -----**<br>


**Figure 12. Output Conductance vs. Drain Current** 

**Figure 13. Transconductance vs. Drain Current** 

**Figure 14. Power Dissipation vs. Ambient Temperature** 

© 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 

www.fairchildsemi.com 

4 

## **Physical Dimensions** 

**==> picture [15 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
        D<br>**----- End of picture text -----**<br>


**Figure 15. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type** 

© 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 

www.fairchildsemi.com 

5 

## **Physical Dimensions** (Continued) 

**Figure 16. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type** 

© 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 

www.fairchildsemi.com 

6 

## **Physical Dimensions** (Continued) 

**Figure 17. MOLDED PACKAGE, SUPERSOT, 3-LEAD** 

© 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 

www.fairchildsemi.com 

7 

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Rev. I73 

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