J109-D26Z

## **J109 / MMBFJ108 N-Channel Switch** 

## **Features** 

- This device is designed for digital switching applications where very low on resistance is mandatory. 

- Sourced from process 58 

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TO-92<br>1<br>1. Drain   2. Source   3. Gate<br>**----- End of picture text -----**<br>


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3<br>2<br>1 SuperSOT-3<br>Marking: I8<br>1. Drain   2. Source  3. Gate<br>**----- End of picture text -----**<br>


**Figure 1. J109 Device Package** 

**Figure 2. MMBFJ108 Device Package** 

## **Ordering Information** 

|**Part Number**|**Top Mark**|**Package**|**Package**|**Packing Method**|
|---|---|---|---|---|
|J109|J109|TO-92 3L|TO-92 3L|Bulk|
|J109-D26Z|J109|TO-92 3L|TO-92 3L|Tape and Reel|
|MMBFJ108|I8|SSOT 3L|SSOT 3L|Tape and Reel|



## **Absolute Maximum Ratings**[(1), (2)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDG|Drain-Gate Voltage|25|V|
|VGS|Gate-Source Voltage|-25|V|
|IGF|Forward Gate Current|10|mA|
|TJ, TSTG|Operating and Storage Junction Temperature Range|-55 to 150|°C|



## **Notes:** 

1. These ratings are based on a maximum junction temperature of 150 ° C. 

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations. 

Publication Order Number: J109/D 

© 2002 Semiconductor Components Industries, LLC. October-2017, Rev. 3 

## **Thermal Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Max.**|**Max.**|**Unit**|
|---|---|---|---|---|
|||**J109**(3)|**MMBFJ108**(4)||
||Total Device Dissipation|625|350|mW|
|PD|||||
||Derate Above 25°C|5.0|2.8|mW/°C|
|RθJC|Thermal Resistance, Junction-to-Case|125||°C/W|
|RθJA|Thermal Resistance, Junction-to-Ambient|200|357|°C/W|



## **Notes:** 

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm[2] . 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Conditions**|**Conditions**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**Off Characteristics**|||||||
|V(BR)GSS|Gate-Source Breakdown Voltage|IG= -10μA, VDS= 0||-25||V|
|IGSS|Gate Reverse Current|VGS= -15 V, VDS= 0|||-3.0|nA|
|||VGS= -15 V, VDS= 0, TA= 100°C|||-200||
|VGS(off)|Gate-Source Cut-Off Voltage|VDS= 15 V, ID= 10 nA|MMBFJ108|-3.0|-10.0|V|
||||J109|-2.0|-6.0||
|**On Characteristics**|||||||
|IDSS|Zero-Gate Voltage Drain Current(5)|VDS= 15 V, VGS= 0|MMBFJ108|80||mA|
||||J109|40|||
|rDS(on)|Drain-Source On Resistance|VDS ≤0.1 V, VGS= 0|MMBFJ108||8.0|Ω|
||||J109||12||
|**Small Signal Characteristics**|||||||
|Cdg(on)<br>Csg(off)|Drain-Gate &Source-Gate On<br>Capacitance|VDS= 0, VGS= 0, f = 1.0 MHz|||85|pF|
|Cdg(off)|Drain-Gate Off Capacitance|VDS= 0, VGS= -10 V, f = 1.0 MHz|||15|pF|
|Csg(off)|Source-Gate Off Capacitance|VDS= 0, VGS= -10 V, f = 1.0 MHz|||15|pF|



## **Note:** 

5. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2%. 

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## **Typical Performance Characteristics** 

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Common Drain-Source Parameter Interactions<br>100 V      = 0 VGS - 2.0 V 100 I       @ V     = 5.0V, V     = 0 PULSEDDSS DS GS 1,000<br>50 r     @ V     = 100mV, V     = 0DS DS GS 500<br>80<br>- 1.0 V - 3.0 V V           @ V      = 5.0V, I     = 3.0 nA GS(off) DS D<br>60 r DS<br>10 100<br>40<br>- 4.0 V 5 50<br>20 TYP   V            = - 5.0 VT   = 25GS(off)A 캜 ° C I DSS<br>- 5.0 V<br>0 10<br>0 0.4 0.8 1.2 1.6 2 _ 0.1 _ 0.5 _ 1 _ 5 _ 10<br>V    - DRAIN-SOURCE VOLTAGE (V)DS V           - GATE CUTOFF VOLTAGE (V)GS (OFF)<br>Figure 3. Common Drain-Source Figure 4. Parameter Interactions<br>100 f = 0.1 - 1.0 MHz 50 T   = 25A �° C<br>40 TYP   V             GS(off) = - 0.7 V<br>C iss (V      =  DS 5.0V)<br>30<br>V      = 0 VGS<br>10<br>C       (V      = 0 ) rss DS 20 - 0.1 V<br>- 0.2 V - 0.3 V - 0.4 V - 0.5 V<br>10<br>0<br>0 -4 -8 -12 -16 -20 0 1 2 3 4 5<br>V     - GATE-SOURCE VOLTAGE (V)GS V    - DRAIN-SOURCE VOLTAGE (V)DS<br>Figure 5. Common Drain-Source Figure 6. Common Drain-Source<br>100<br>100 V      DG = 10V<br>50 V             @ 5.0V, 10 GS(off) μ A 50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz<br>       = 0.21 @ f  ≥  1.0 kHz<br>r DS<br>20 r     = DS 1  -   ________V GS<br>10 V GS(off) 10<br>5<br>5<br>I     = 1. D 0 mA<br>2<br>I     = 10 mA D<br>1<br>0 0.2 0.4 0.6 0.8 1 1<br>V    /V        - NORMALIZED GATE-SOURCE VOLTAGE (V)GS GS(off) 0.01 0.03 0.1 0.5 1 2 10 100<br>f - FREQUENCY (kHz)<br>)( Ω<br>DSS<br>I     - DRAIN CURRENT (mA)D I       - DRAIN CURRENT (mA)<br>DS<br>r     - DRAIN "ON" RESISTANCE<br>rs<br>D<br>ts I     - DRAIN CURRENT (mA)<br>C     (C     ) - CAPACITANCE (pF)<br>√<br>DS n<br>r      - NORMALIZED RESISTANCE e    - NOISE VOLTAGE (nV /   Hz)<br>**----- End of picture text -----**<br>


**Figure 7. Normalized Drain Resistance vs. Bias Voltage** 

**Figure 8. Noise Voltage vs. Frequency** 

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## **Typical Performance Characteristics** (Continued) 

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Switching Turn-On Time vs Switching Turn-On Time<br>Gate-Source Cutoff Voltage vs Drain Current<br>10 50<br>T   = 25A ° 캜 C<br>8 V      = 1.5VDD 40<br>V             =  - 8.5VGS(off)<br>6 V            = - 12V GS(off) 30 V              GS(off) = - 5.5V<br>I     = 30 mA D V             =  - 3.5V GS(off)<br>4 20<br>I     = 10 mA D T   = 25A 캜 ° C<br>2 10 V      = 1.5VDD<br>V            = - 12V GS(off)<br>0 0<br>0 -2 -4 -6 -8 -10 0 5 10 15 20 25<br>V           - GATE-SOURCE CUTOFF VOLTAGE (V)GS(off)GS(off) I    - DRAIN CURRENT (mA)D<br>t      - TURN-ON TIME (ns)ONON OFF<br>t       - TURN-OFF TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 9. Switching Turn-On Time vs. Gate-Source Cut-Off Voltage** 

**Figure 10. Switching Turn-On Time vs. Drain Current** 

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100<br>100<br>50 V       = 0 GS V       DG = 5.0V<br>10V<br>V            = - 3.0V GS(off)125 �° C VGS(off) 5.0V 15V 20V<br>125 �° C - 4.0V 10V 5.0V<br>10 10 15V<br>10V<br>5 25 °� C - 2.0V 20V 15V<br>20V<br>25 °� C V             GS(off) - 55 °� C= - 5.0V T    = 25A �° C<br>- 1.0V f = 1.0 kHz<br>1<br>1 0.1 1 10<br>1 10 100<br>I    - DRAIN CURRENT (mA)D<br>I   - DRAIN CURRENT (mA)D<br>)( Ω<br>μ<br>DS<br>r       - DRAIN "ON" RESISTANCE<br>os<br>g      - OUTPUT CONDUCTANCE (   mhos)<br>**----- End of picture text -----**<br>


**Figure 11. On Resistance vs. Drain Current** 

**Figure 12. Output Conductance vs. Drain Current** 

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100 T   = 25A �° C T    A = - 55 �° C<br>V      = 10VDG T    = 25A �° C<br>f = 1.0 kHz T    =  125A �° C<br>10<br>V             =  - 1.0V GS(off)<br>V             =  - 3.0VGS(off)<br>V             =  - 5.0VGS(off)<br>1<br>0.1 1 10<br>I    - DRAIN CURRENT (mA)D<br>fs<br>g     - TRANSCONDUCTANCE (mmhos)<br>**----- End of picture text -----**<br>


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700<br>600<br>500<br>T O -92<br>400 S uperS O T-3<br>300<br>200<br>100<br>0<br>0 25 50 75 100 125 150<br>TE M P E R A TU R E  ( oC )<br> - POWER DISSIPATION(mW)PD<br>**----- End of picture text -----**<br>


**Figure 13. Transconductance vs. Drain Current** 

**Figure 14. Power Dissipation vs. Ambient Temperature** 

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## **Physical Dimensions** 

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**Figure 15. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type** 

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## **Physical Dimensions** (Continued) 

**Figure 16. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type** 

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## **Physical Dimensions** (Continued) 

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**Figure 17. MOLDED PACKAGE, SUPERSOT, 3-LEAD** 

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