IXYN82N120C3H1

IGBT Module, Single, 105 A, 3.2 V, 500 W, 150 °C, SOT-227B

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Manufacturer: IXYS SEMICONDUCTOR
Product type: IGBT Modules
Transistor Polarity:N Channel; DC Collector Current:105A; Collector Emitter Saturation Voltage Vce(on):3.2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transis
SVHC: Lead (17-Jan-2023)
No. of Pins: 4Pins
Product Range: XPT GenX3
IGBT Technology: IGBT 3 High Speed
IGBT Termination: Stud
Power Dissipation: 500W
IGBT Configuration: Single
Transistor Mounting: Panel
Transistor Polarity: N Channel
DC Collector Current: 105A
Power Dissipation Pd: 500W
Transistor Case Style: SOT-227B
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 105A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 3.2V
Collector Emitter Saturation Voltage Vce(on): 3.2V

Delivery and price
Units per pack	300
Price	12.17 €
Current stock	N/A
Lead time	30 days

Datasheet

Updated at February 27, 2026