IXTY01N100D

Power MOSFET, N Channel, 1 kV, 400 mA, 50 ohm, TO-252, Surface Mount

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
MSL: MSL 1 - Unlimited
SVHC: No SVHC (12-Jan-2017)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 25W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 0V
Transistor Case Style: TO-252
Drain Source Voltage Vds: 1kV
Operating Temperature Max: 150°C
Continuous Drain Current Id: 400mA
Drain Source On State Resistance: 50ohm
Gate Source Threshold Voltage Max: 4.5V

Delivery and price
Units per pack	1000
Price	1.57 €
Current stock	50+
Lead time	30 days

Datasheet

## **Depletion Mode MOSFET** 

## **IXTY01N100D IXTU01N100D IXTP01N100D** 

**V =     1000V DSX** 

> **R  80  DS(on)** 

## **N-Channel** 

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**----- Start of picture text -----**<br>
D<br>TO-252<br>(IXTY)<br>G<br>@<br>S<br>**----- End of picture text -----**<br>


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G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|---|
|**VDSX**|TJ = 25C to 150C||1000|V|
|**VDGX**|TJ = 25C to 150C||1000|V|
|**VGSX**|Continuous||20|V|
|**VGSM**|Transient||30|V|
|**IDM**|TC = 25C, Pulse Width Limited by T**J**||400|mA|
|**PD**|TC = 25C||25                    W|25                    W|
||TA = 25C||1.1                   W|1.1                   W|
|**TJ**||- 55 ... +150|- 55 ... +150|C|
|**TJM**|||150|C|
|**Tstg**||- 55 ... +150|- 55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260                   °C|1.6 mm (0.062in.) from Case for 10s                              260                   °C|1.6 mm (0.062in.) from Case for 10s                              260                   °C|1.6 mm (0.062in.) from Case for 10s                              260                   °C|
|**Md**|Mounting Torque (TO-220)<br>1.13 / 10|1.13 / 10||Nm/lb.in.|
|**Weight**|**Weight**TO-252                                                                                      0.35                         g|TO-252                                                                                      0.35                         g|TO-252                                                                                      0.35                         g|TO-252                                                                                      0.35                         g|
|TO-251                                                                                          0.40                          g|TO-251                                                                                          0.40                          g|TO-251                                                                                          0.40                          g|TO-251                                                                                          0.40                          g|TO-251                                                                                          0.40                          g|
|TO-220                                                                                       3.00                         g|TO-220                                                                                       3.00                         g|TO-220                                                                                       3.00                         g|TO-220                                                                                       3.00                         g|TO-220                                                                                       3.00                         g|



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TO-251<br>(IXTU)<br>G<br>D<br>S D (Tab)<br>TO-220<br>(IXTP)<br>G<br>D<br>S<br>D (Tab)<br>G = Gate D       =  Drain<br>S = Source Tab   =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

- Normally ON Mode 

|(TJ= 25C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**<br>~~|~~|**Min.        Typ.      Max.**<br>~~||~~|**Min.        Typ.      Max.**|
|---|---|---|
|**BVDSX**<br>VGS = -10V, ID= 25A                                       1000<br>~~|~~<br>~~|~~|~~||~~<br>~~|~~|V<br>|
|**VGS(off)**<br>VDS = 25V, ID= 25A<br>- 2.0                      - 4.5     V<br>~~|~~<br>~~||~~|- 2.0                      - 4.5     V<br>~~| |~~<br>~~||~~|- 2.0                      - 4.5     V<br>|
|**IGSX**<br>VGS =20V, VDS= 0V<br><br>~~||~~|<br>~~|||~~|100<br>nA<br>~~|~~|
|**IDSX(off)**<br>VDS = VDSX, VGS= -10V<br>10<br>TJ= 125C<br>250<br>~~|~~<br>~~|~~|10<br>250<br>~~|~~<br>~~|~~|10<br>A<br>250A<br>|
|**RDS(on)**<br>VGS = 0V, ID= 50mA, Note 1<br>~~|~~<br>~~|~~|50          80<br>~~||~~<br>~~|~~|50          80|
|**ID(on)**<br>VGS = 0V, VDS= 25V, Note 1<br>400<br>~~|~~<br>~~|~~|400<br>~~||~~<br>~~| ~~||mA|



- International Standard Packages 

- • Low R HDMOS[TM] Process DS(on) 

- Rugged Polysilicon Gate Cell Structure 

- Fast Switching Speed 

## **Advantages** 

- Easy to Mount 

- Space Savings 

- High Power Density 

## **Applications** 

- Level Shifting 

- Triggers 

- Solid State Relays •  Current Regulators 

DS98809F(5/19) 

©2019 IXYS CORPORATION,  All Rights Reserved 

## **IXTY01N100D  IXTU01N100D IXTP01N100D** 

|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.      Max.**|
|---|---|---|---|---|
|**gfs**<br>VDS= 100V, ID= 100mA, Note 1                   100|200||mS||
|**Ciss**<br> <br>**Coss**<br>VGS= -10V, VDS=  25V, f = 1MHz<br> <br>**Crss**<br>|100<br>12<br>2||pF<br>pF<br>pF||
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS=5V, VDS= 50V, ID= 50mA<br>RG= 30(External)|7<br>10<br>34<br>64||ns<br>ns<br>ns<br>ns||
|**Qg(on)**<br> <br>**Qgs**<br>VGS=5V, VDS= 500V, ID= 50mA<br> <br>**Qgd**<br>|5.8<br>3.6<br>0.4||nC<br>nC<br>nC||
|**RthJC**<br> <br>**RthCS**<br>TO-220|<br>0.50||5.0 C/W<br>C/W||
|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>|||||
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.**||**Typ.**||**Max.**|
|**VSD**<br>IF= 100mA, VGS= -10V,  Note 1||||1.5     V|
|**trr**<br> <br>IF= 750mA, -di/dt = 100A/s<br>VR= 25V, VGS= -10V||||1.5     μs|



Note  1.  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTY01N100D  IXTU01N100D IXTP01N100D** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>100<br>V GS = 5.0V<br>90           0V<br>80<br>- 0.5V<br>70<br>60<br>-1.0V<br>50<br>40<br>-1.5V<br>30<br>20<br>- 2.0V<br>10<br>0 - 3.0V<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS - Volts<br>Fig. 3. Drain Current @ TJ = 25 [o] C<br>1.E+01<br>1.E+00 V GS = 0V<br> -0.5V<br> -1.0V<br>1.E-01 -1.5V<br> -2.0V<br>1.E-02<br>- 2.5V<br>1.E-03<br>- 3.0V<br>1.E-04<br>1.E-05<br>- 3.5V<br>1.E-06<br>1.E-07<br>0 50 100 150 200 250 300 350 400 450<br>VDS - Volts<br> - MilliAmperes<br>ID<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 2. Output Characteristics @ TJ = 125 [o] C<br>100<br>VGS = 5.0V<br>90          0V<br>80 - 0.5V<br>70<br>60<br>-1.0V<br>50<br>40<br>30 -1.5V<br>20<br>10 - 2.0V<br>- 3.0V<br>0<br>0 1 2 3 4 5 6 7 8 9 10 11<br>VDS - Volts<br> - MilliAmperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 4. Drain Current @ TJ = 100[o] C** 

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1.E+01<br>1.E+00 V GS = 0V  -0.5V<br>-1.0V<br>1.E-01 - 1.5V<br>- 2.0V<br>1.E-02 - 2.5V<br>1.E-03 - 3.0V<br>1.E-04<br>- 3.5V<br>1.E-05<br>1.E-06 - 4.0V<br>1.E-07<br>0 50 100 150 200 250 300 350 400 450<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 6. Normalized RDS(on) vs. Junction Temperature<br>2.4<br>2.2 VGS = 0V<br>I  D  = 50mA<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 5. Dynamic Resistance vs. Gate Voltage<br>1.E+09<br>∆V DS  = 300V - 100V<br>1.E+08<br>1.E+07<br>TJ = 25 [o] C<br>TJ = 100 [o] C<br>1.E+06<br>1.E+05<br>1.E+04<br>1.E+03<br>-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0<br>VGS - Volts<br> - Ohms<br>O<br>R<br>**----- End of picture text -----**<br>


©2019 IXYS CORPORATION,  All Rights Reserved 

## **IXTY01N100D  IXTU01N100D IXTP01N100D** 

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Fig. 7. RDS(on) Normalized to ID = 50mA Value<br>vs. Drain Current Fig. 8. Input Admittance<br>5 250<br> V GS = 0V  VDS = 100V<br>            5V<br>4 200<br>3 150 TJ = 125 [o] C<br>         25 [o] C<br>T J  = 125 [o] C        - 40 [o] C<br>2 100<br>1 50<br>TJ = 25 [o] C<br>0 0<br>0 100 200 300 400 500 600 700 800 900 1000 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5<br>ID - MilliAmperes VGS - Volts<br> - Normalized<br> - MilliAmperes<br>DS(on) ID<br>R<br>**----- End of picture text -----**<br>


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Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>350 300<br>V DS  = 100V  T J = - 40 [o] C  25 [o] C  VGS = -10V<br>300<br>250<br>125 [o] C<br>250<br>200<br>200<br>150<br>150 TJ = 125 [o] C<br>T J = 25 [o] C<br>100<br>100<br>50 50<br>0 0<br>0 50 100 150 200 250 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>ID - MilliAmperes VSD - Volts<br>Fig. 11. Capacitance Fig. 12. Gate Charge<br>1,000 5<br>f = 1 MHz  4  VDS = 500V<br> I D = 50mA<br>3<br> I G = 1mA<br>Ciss 2<br>100<br>1<br>0<br>Coss -1<br>10<br>-2<br>-3<br>Crss<br>-4<br>1 -5<br>0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6<br>VDS - Volts QG - NanoCoulombs<br> - MilliSiemens<br>f s  - MilliAmperes<br>g IS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

## **IXTY01N100D  IXTU01N100D IXTP01N100D** 

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Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area<br>@ TC = 25 [o] C @ TC = 75 [o] C<br>1 1<br>R DS(on)  Limit R DS(on)  Limit<br>250μs<br>250μs<br>1ms<br>0.1 0.1<br>1ms<br>10ms<br>TJ = 150 [o] C 100ms T J  = 150 [o] C 10ms<br>T C  = 25 [o] C    DC TC = 75 [o] C    100ms<br>Single Pulse  Single Pulse<br>DC<br>0.01 0.01<br>10 100 1,000 10 100 1,000<br>VDS - Volts VDS - Volts<br>Fig. 15. Maximum Transient Thermal Impedance<br>10<br>1<br>0.1<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - AmperesID  - AmperesID<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


©2019 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: T_01N100D(F2)6-16-17-A 

## **IXTY01N100D  IXTU01N100D IXTP01N100D** 

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IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

**IXTY01N100D  IXTU01N100D IXTP01N100D** 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

©2019 IXYS CORPORATION,  All Rights Reserved

Updated at April 29, 2026

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