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IXTX90N25L2
Power MOSFET, LINEAR L2™, N Channel, 250 V, 90 A, 0.033 ohm, PLUS247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Powe
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 960W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PLUS247
- Drain Source Voltage Vds: 250V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 90A
- Drain Source On State Resistance: 0.033ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 18.81 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **LinearL2[TM] Power MOSFET w/ Extended FBSOA** ## **IXTK90N25L2 IXTX90N25L2** N-Channel Enhancement Mode Avalanche Rated |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|| |---|---|---|---|---| |~~OC~~||||| |**VDSS**|TJ = 25C to 150C|250||V| |**VDGR**|TJ = 25C to 150C, RGS= 1M|250|V|V| |**VGSS**|Continuous|20||V| |**VGSM**|Transient|30||V| |**ID25**|TC = 25C|90|A|A| |**IDM**|TC = 25C, Pulse Width Limited by TJM|360||A| |**IA**|TC = 25C|45||A| |**EAS**|TC = 25C|3||J| |**PD**|TC = 25C|960||W| |**TJ**||-55...+150|C|| |**TJM**||150|C|| |**Tstg**||-55...+150|C|| |**TL**|Maximum Lead Temperature for Soldering|300||°C| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260 °C|°C|°C| |**Md**|Mounting Torque (TO-264)|1.13/10|Nm/lb.in|| |**FC**|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb| |**Weight**|TO-264|10||g| ||PLUS247|6|6|6g| **V = 250V DSS I = 90A D25 R < 36m DS(on)** **==> picture [113 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> TO-264 (IXTK)<br>G<br>D<br>S<br>Tab<br>PLUS247 (IXTX)<br>G<br>D<br>S Tab<br>G = Gate D = Drain<br>S = Source Tab = Drain<br>**----- End of picture text -----**<br> ## **Features** - Designed for Linear Operation - International Standard Packages - Avalanche Rated - Guaranteed FBSOA at 75C ## **Advantages** - Easy to Mount - Space Savings |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA<br>250|~~7~~|V| |**VGS(th)**<br>VDS = VGS, ID= 3mA<br>2.0<br>4.5 V|4.5 V<br>~~=~~|4.5 V| |**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~_~~|200 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>50<br>TJ= 125C<br>2.5|50<br>2.5<br>~~_~~|50A<br>2.5mA| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>36 m|36 m<br>~~_~~<br>~~_~~|36 m| - High Power Density ## **Applications** - Solid State Circuit Breakers - Soft Start Controls - Linear Amplifiers - Programmable Loads - Current Regulators DS100080A(4/16) © 2016 IXYS CORPORATION, All Rights Reserved **IXTK90N25L2 IXTX90N25L2** **Symbol Test Conditions Characteristic Values TO-264 AA Outline** (TJ = 25C, Unless Otherwise Specified) **Min. Typ. Max. gfs** VDS= 10V, ID = 0.5 • ID25, Note 1 35 50 65 S **Ciss** 23 nF **Coss** VGS = 0V, VDS = 25V, f = 1MHz 2140 pF **Crss** 360 pF **t** 50 ns **ttd(on)r Resistive Switching Times** VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 175 40 nsns tl Terminals: 1 - Gate2 - Drain2 - Drain **td(off)f** RG = 1 (External) 160 ns 3 - Source4 - Drain Dim. Millimeter Inches **Q** 640 nC Min. Max. Min. Max. **g(on)** A 4.82 5.13 .190 .202 **Qgs** VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 125 nC A1A2 2.542.00 2.892.10 .100.079 .114.083 **Qgd** 385 nC b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 **RthJC** 0.13 C/W b2c 2.900.53 3.090.83 .114.021 .122.033 **RthCS** 0.15 C/W D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 **Safe Operating Area Specification** L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 **Symbol Test Conditions Characteristic Values** QQ1 8.386.07 8.696.27 .330.239 .247.342 **Min. Typ. Max.** R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 **SOA** VDS = 250V, ID = 2.3A, TC = 75C, Tp = 5s 575 W S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 ~~STSo.|. A~~ **PLUS 247[TM] Outline Source-Drain Diode Symbol Test Conditions Characteristic Values** (TJ = 25C, Unless Otherwise Specified) **Min. Typ. Max. IS** VGS = 0V 90 A **ISM** Repetitive, Pulse Width Limited by TJM 360 A **VSD** IF = 45A, VGS = 0V, Note 1 1.5 V **IQtRMrrRM** IVF = 45A, -di/dt = 100A/R 266 23 3.0= 80V, VGS = 0V s, μCnsA 1 - Gate2 - Drain2 - Drain **==> picture [111 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |Terminals:|1 - Gate| |2 - Drain| |3 - Source| |Dim.|Millimeter|Inches| |Min.|Max.|Min.|Max.| |A|4.83|5.21|.190|.205| |A1|2.29|2.54|.090|.100| |A2|1.91|2.16|.075|.085| |b|1.14|1.40|.045|.055| |b1|1.91|2.13|.075|.084| |b2|2.92|3.12|.115|.123| |C|0.61|0.80|.024|.031| |D|20.80|21.34|.819|.840| |E|15.75|16.13|.620|.635| |e|5.45 BSC|.215 BSC| |L|19.81|20.32|.780|.800| |L1|3.81|4.32|.150|.170| |Q|5.59|6.20|.220|0.244| |R|4.32|4.83|.170|.190| **----- End of picture text -----**<br> Note: 1. Pulse test, t 300s, duty cycle, d 2%. - IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXTK90N25L2 IXTX90N25L2** **==> picture [264 x 216] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>90<br>VGS = 20V<br>80 12V<br> 10V 9V<br>70<br>60 8V<br>50<br>40<br>7V<br>30<br>6V<br>20<br>10 5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 125ºC** **==> picture [254 x 391] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>VGS = 20V<br>80 12V<br> 10V<br>70 9V<br>8V<br>60<br>50 7V<br>40<br>30<br>6V<br>20<br>10<br>5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 45A Value vs.<br> Drain Current<br>2.6<br>2.4 VGS = 10V<br>2.2 T J = 125ºC<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2 T J = 25ºC<br>1.0<br>0.8<br>0 20 40 60 80 100 120 140 160 180 200 220 240<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [202 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>**----- End of picture text -----**<br> **==> picture [256 x 400] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>VGS = 20V 12V<br>250 14V 10V<br>200 9V<br>150<br>8V<br>100<br>7V<br>50<br>6V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 45A Value vs.<br>Junction Temperature<br>2.4<br>2.2 V GS = 10V<br>2.0<br>1.8<br>I D = 90A<br>1.6<br>I D = 45A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Maximum Drain Current vs. Case Temperature** **==> picture [256 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2016 IXYS CORPORATION, All Rights Reserved **IXTK90N25L2 IXTX90N25L2** **==> picture [264 x 430] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>160<br>140<br>120<br>TJ = 125ºC<br>100 25ºC<br> - 40ºC<br>80<br>60<br>40<br>20<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>280<br>240<br>200<br>160<br>120<br>80 TJ = 125ºC<br>40 T J = 25ºC<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [264 x 430] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>120<br>TJ = - 40ºC<br>100<br>25ºC<br>80<br>125ºC<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140<br>ID - Amperes<br>Fig. 10. Gate Charge<br>16<br> VDS = 125V<br>14<br> I D = 45A<br>12 I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 100 200 300 400 500 600 700 800 900 1000<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [535 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance<br>100,000 1<br>f = 1 MHz<br>Ciss<br>10,000 0.1<br>Coss<br>1,000 0.01<br>Crss<br>100 0.001<br>0 5 10 15 20 25 30 35 40 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXTK90N25L2 IXTX90N25L2** ## **Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC** **==> picture [255 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> 1,000<br>RDS(on) Limit<br>100 25µs<br>100µs<br>1ms<br>10 10ms<br>100ms<br>TJ = 150ºC DC<br>T C = 25ºC<br>Single Pulse<br>1<br>10 100 1000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## **Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC** **==> picture [255 x 235] intentionally omitted <==** **----- Start of picture text -----**<br> 1,000<br>RDS(on) Limit<br>100<br>25µs<br>100µs<br>1ms<br>10<br>10ms<br>T J = 150ºC 100ms<br>TC = 75 º C DC<br>Single Pulse<br>1<br>10 100 1000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: T_90N25L2(9R)12-01-08 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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