IXTX32P60P

Power MOSFET, P Channel, 600 V, 32 A, 0.35 ohm, PLUS247, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
SVHC: No SVHC (12-Jan-2017)
No. of Pins: 3Pins
Channel Type: P Channel
Product Range: PolarP
Qualification: -
Power Dissipation: 890W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: PLUS247
Drain Source Voltage Vds: 600V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 32A
Drain Source On State Resistance: 0.35ohm
Gate Source Threshold Voltage Max: 4V

Delivery and price
Units per pack	250
Price	10.37 €
Current stock	200+
Lead time	30 days

Datasheet

## **PolarP[TM] Power MOSFET** 

## **IXTK32P60P IXTX32P60P** 

**V =    - 600V DSS I =    - 32A D25 R  350m  DS(on)** 

P-Channel Enhancement Mode Avalanche Rated 

|**Symbol**|**Test Conditions**||**Maximum Ratings**||
|---|---|---|---|---|
|~~ee~~|||||
|**VDSS**|TJ = 25C to 150C||- 600|V|
|**VDGR**|TJ = 25C to 150C, R|C, RGS= 1M|- 600|V|
|**VGSS**|Continuous||20|V|
|**VGSM**|Transient||30|V|
|**ID25**|TC = 25C||- 32|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM||- 96|A|
|**IA**|TC = 25C||- 32|A|
|**EAS**|TC = 25C||3.5|J|
|**dv/dt**|IS<br>IDM, VDD VDSS, T|, TJ 150C|10|V/ns|
|**PD**|TC = 25C||890|W|
|**TJ**|||-55 ... +150|C|
|**TJM**|||150|C|
|**Tstg**|||-55 ... +150|C|
|**TL**|1.6mm (0.062 in.) from Case for 10s||300|C|
|**TSOLD**|Plastic Body for 10s||260|C|
|**Md**|Mounting  Force|(PLUS247)                 20..120/4.5..27                N/lb.|(PLUS247)                 20..120/4.5..27                N/lb.|(PLUS247)                 20..120/4.5..27                N/lb.|
|Mounting  Torque|Mounting  Torque|(TO-264)|1.13/10         Nm/lb.in.||
|**Weight**|PLUS247||6|g|
||TO-264||10                     g|10                     g|



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**----- Start of picture text -----**<br>
TO-264 (IXTK)<br>G<br>D<br>S<br>Tab<br>PLUS247 (IXTX)<br>G<br>D<br>S Tab<br>G  =  Gate D     =  Drain<br>S  =  Source Tab  =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

- International Standard Packages 

- Rugged PolarPTM Process 

- Avalanche Rated 

- Low Package Inductance 

## **Advantages** 

- Easy to Mount 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.       Max.**|**Min.       Typ.       Max.**|**Min.       Typ.       Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.       Max.**|**Min.       Typ.       Max.**|**Min.       Typ.       Max.**|
|**BVDSS**<br>VGS = 0V, ID= - 250A                                    - 600|~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= -1mA<br>- 2.0                    - 4.0     V|- 2.0                    - 4.0     V<br>~~|~~|- 2.0                    - 4.0     V|
|**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~|~~<br>~~a~~|100 nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>- 50<br>TJ= 125C<br>- 250|- 50<br>- 250<br>~~=~~|- 50A<br>- 250A|
|**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25,  Note 1<br>350  m|350  m<br>~~=~~<br>~~|~~|350  m|



- Space Savings 

- High Power Density 

## **Applications** 

- High-Side Switches 

- Push Pull Amplifiers  DC Choppers  Automatic Test Equipment  Current Regulators 

DS99990C(3/15) 

© 2015 IXYS CORPORATION,  All rights reserved 

## **IXTK32P60P IXTX32P60P** 

|**gfs**<br>VDS= -10V, ID= 0.5 • ID25,  Note 1                       21           32<br>|<br>~~oe~~|,  Note 1                       21           32<br>~~oe~~|
|---|---|
|**Ciss**<br>11.1<br>**Coss**<br>VGS= 0V, VDS= - 25V, f = 1MHz<br>925<br>**Crss**<br>77<br>|<br>~~oe~~|11.1<br>925<br>77<br>~~oe~~|
|**td(on)**<br> <br>**tr**<br>27<br>**td(off)**<br>95<br>**tf**<br>33<br>**Resistive Switching Times**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)<br>|<br>~~oe~~|37<br>27<br>95<br>33<br>~~oe~~|
|**Qg(on)**<br>196<br>**Qgs**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>54<br>**Qgd**<br>58|196<br>54<br>58|
|**RthJC**<br>0.14<br>**RthCS**<br>0.15|0.14<br>0.15|



## **Source-Drain Diode** 

|(TJ= 25C, Unless Otherwise Specified)<br>**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|
|---|---|
|**IS**<br>VGS= 0V|- 32     A|
|**ISM**<br>Repetitive, pulse width limited by TJM|-128     A|
|**VSD**<br>IF= -16A, VGS= 0V,  Note 1|- 2.8     V|
|**trr**<br>480<br>**QRM**<br>11.4<br>**IRM**- 47.6<br>IF= -16A, -di/dt = -150A/s<br>VR= -100V, VGS= 0V|480<br>11.4<br>- 47.6|



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  TO-264 AA Outline<br>**----- End of picture text -----**<br>


|A|Ag|Terminals:<br>1 - Gate<br>2 - Drain<br>3 - Source<br>4 - Drain|
|---|---|---|
|Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|A<br>A1<br>A2|4.82<br>5.13<br>2.54<br>2.89<br>2.00<br>2.10|.190<br>.202<br>.100<br>.114<br>.079<br>.083|
|b<br>b1<br>b2|1.12<br>1.42<br>2.39<br>2.69<br>2.90<br>3.09|.044<br>.056<br>.094<br>.106<br>.114<br>.122|
|c|0.53<br>0.83|.021<br>.033|
|D|25.91<br>26.16|1.020<br>1.030|
|E<br>e|19.81<br>19.96<br>5.46 BSC|.780<br>.786<br>.215 BSC|
|J|0.00<br>0.25|.000<br>.010|
|K|0.00<br>0.25|.000<br>.010|
|L<br>L1|20.32<br>20.83<br>2.29<br>2.59|.800<br>.820<br>.090<br>.102|
|P|3.17<br>3.66|.125<br>.144|
|Q<br>Q1|6.07<br>6.27<br>8.38<br>8.69|.239<br>.247<br>.330<br>.342|
|R<br>R1|3.81<br>4.32<br>1.78<br>2.29|.150<br>.170<br>.070<br>.090|
|S|6.04<br>6.30|.238<br>.248|
|T|1.57<br>1.83|.062<br>.072|



**PLUS 247[TM] Outline** 

Note       1:  Pulse test, t  300s, duty cycle, d  2%. 

|Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>A1<br>A2|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085|
|b<br>b1<br>b2|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123|
|C<br>D<br>E|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635|
|e<br>L<br>L1|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32|.215 BSC<br>.780<br>.800<br>.150<br>.170|
|Q<br>R|5.59<br>6.20<br>4.32<br>4.83|.220 0.244<br>.170<br>.190|



- IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTK32P60P IXTX32P60P** 

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Fig. 1. Output Characteristics @ TJ = 25ºC<br>-32<br>V GS = -10V<br>-28        - 7V<br>-24 - 6V<br>-20<br>-16<br>-12<br>- 5V<br>-8<br>-4<br>0<br>0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ TJ = 25ºC** 

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-70<br>VGS = -10V<br>- 7V<br>-60<br>-50<br>- 6V<br>-40<br>-30<br>-20<br>-10 - 5V<br>0<br>0 -5 -10 -15 -20 -25 -30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = -16A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC<br> Junction Temperature<br>-32 2.4<br>VGS = -10V<br>-28        - 7V    V GS = -10V<br>2.0<br>-24 - 6V<br>I D = - 32A<br>-20<br>1.6<br>I D = -16A<br>-16 - 5V<br>-12 1.2<br>-8<br>0.8<br>-4<br>0 0.4<br>0 -5 -10 -15 -20 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = -16A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>2.2 -36<br>-32<br>2.0 TJ = 125ºC<br>-28<br>1.8<br>-24<br>1.6 V GS  = -10V  -20<br>1.4 -16<br>-12<br>1.2<br>-8<br>1.0 TJ = 25ºC<br>-4<br>0.8 0<br>0 -10 -20 -30 -40 -50 -60 -70 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2015 IXYS CORPORATION,  All rights reserved 

**IXTK32P60P IXTX32P60P** 

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Fig. 7. Input Admittance Fig. 8. Transconductance<br>-45 60<br>TJ = - 40ºC<br>-40<br>50<br>-35<br>-30 40 25ºC<br>-25<br>30<br>125ºC<br>-20<br>TJ = 125ºC<br>-15           25ºC 20<br>    - 40ºC<br>-10<br>10<br>-5<br>0 0<br>-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>-100 -10<br>-90 -9  VDS = - 300V<br> I D = -16A<br>-80 -8<br> I G = -1mA<br>-70 -7<br>-60 -6<br>-50 -5<br>-40 -4<br>TJ = 125ºC<br>-30 -3<br>-20 TJ  = 25ºC -2<br>-10 -1<br>0 0<br>-0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 0 20 40 60 80 100 120 140 160 180 200<br>VSD - Volts QG - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>100,000 - 100<br>f = 1 MHz  RDS(on) Limit<br>25µs<br>10,000 100µs<br>Ciss - 10<br>1ms<br>1,000<br>10ms<br>Coss DC, 100ms<br>-1<br>100 TJ = 150ºC<br>C rss TSingle Pulse  C = 25ºC<br>10 - 0.1<br>0 -5 -10 -15 -20 -25 -30 -35 -40 - 10 - 100 - 1000<br>VDS - Volts VDS - Volts<br> - Siemens<br> - AmperesID gf s<br> - Volts<br> - AmperesIS VGS<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXTK32P60P IXTX32P60P** 

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Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2015 IXYS CORPORATION,  All rights reserved 

IXYS REF: T_32P60P(B9)3-25-09-A 

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Updated at April 29, 2026

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