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IXTX120N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 120 A, 0.023 ohm, PLUS247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; P
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.25kW
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PLUS247
- Drain Source Voltage Vds: 650V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 120A
- Drain Source On State Resistance: 0.023ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 12.94 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## Preliminary Technical Information ## **X2-Class Power MOSFET** ## **IXTK120N65X2 IXTX120N65X2** **V = 650V DSS I = 120A D25** |||||**RDS(on)** ** 23m**|**RDS(on)** ** 23m**|**RDS(on)** ** 23m**|**RDS(on)** ** 23m**|| |---|---|---|---|---|---|---|---|---| |N-Channel Enhancement Mode||||||||| |Avalanche Rated|Avalanche Rated|||||||| |**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25C to 150C<br>650<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>650<br>V<br>**VGSS**<br>Continuous<br>30<br>V<br>**PLUS247 (IXTX)**<br>**TO-264P (IXTK)**<br>S<br>G<br>D<br>Tab<br>~~nd~~||||||||| |**VGSM**<br>Transient<br>40<br>V<br>**ID25**<br>TC = 25C<br>120<br>A<br>**IDM**<br>TC = 25C, Pulse Width Limited by TJM<br>240<br>A<br>**IA**<br>TC = 25C<br>15<br>A<br>**EAS**<br>TC = 25C<br>3.5<br>J<br>**PD**<br>TC = 25C<br>1250<br>W<br>Tab<br>G<br>D S<br>~~De~~<br>~~ee~~||||||||| |**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150°C 50 V/ns|150°C 50 V/ns|150°C 50 V/ns|G = Gate<br>D = Drain<br>S = Source<br>Tab = Drain|D = Drain<br>Tab = Drain|||| |**TJ**||-55 ... +150|C|||||| |**TJM**||150|C|||||| |**Tstg**||-55 ... +150|C|||||| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C|**Features**||||| |**TSOLD**|Plastic Body for 10s<br>260 °C|260 °C|260 °C|International Standard Packages||International Standard Packages||| |**Md**|Mounting Torque (TO-264P)|1.13/10|Nm/lb.in|Low QG||||| |**FC**|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb|Avalanche Rated||||| |**Weight**|TO-264P|10|g|Low Package Inductance||||| ||PLUS247|6|6g|||||| ## **Advantages** - High Power Density |**Symbol**<br>(T= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA 650||V| |**VGS(th)**<br>VDS = VGS, ID= 1mA 3.0|5.0|5.0<br>V| |**IGSS**<br>VGS =30V, VDS= 0V||200<br>nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>500|25<br>500|25<br>A<br>500A| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1|23 m|23 m| - Easy to Mount - Space Savings ## **Applications** - Switch-Mode and Resonant-Mode Power Supplies - DC-DC Converters - PFC Circuits - AC and DC Motor Drives - Robotics and Servo Controls © 2016 IXYS CORPORATION, All Rights Reserved DS100677B(03/16) ## **IXTK120N65X2 IXTX120N65X2** |(TC, Unless Otherwise Specified)**Min. Typ. Max**|(TC, Unless Otherwise Specified)**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**| |---|---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min. Typ. Max**||**Min. Typ. Max**|**Min. Typ. Max**| |**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1 66 110 S||, Note 1 66 110 S|, Note 1 66 110 S| |**RGi**<br>Gate Input Resistance<br>0.77||0.77|| |**Gi**<br>**C**<br>13.6||13.6|nF| |**Ciss**<br>**Coss**<br>**Crss**|13.6<br>VGS= 0V, VDS= 25V, f = 1MHz<br>9500<br>8.9|13.6<br>9500<br>8.9|nF<br>pF<br>pF| |**Co(er)**<br>425<br>**Co(tr)**<br>1960 pF<br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS<br>;||425<br>1960 pF<br>~~-~~|pF<br>1960 pF| |**o(tr)**<br>**td(on)**<br>32<br>**tr**<br>24<br>**td(off)**<br>87<br>**tf**<br>10<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)<br>Time related<br>DSDSS<br>;||32<br>24<br>87<br>10<br>~~-~~|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br>230<br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br>74<br>**Qgd**<br>65||230<br>74<br>65|nC<br>nC<br>nC| |**RthJC**<br>0.10<br>**RthCS**<br>0.15||0.10<br>0.15|0.10C/W<br>C/W| **==> picture [534 x 154] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS247 [TM] Outline<br>A<br>A2 E Q E1<br>Source-Drain Diode t- r= —r 4<br>D2<br>R<br>Symbol Test Conditions Characteristic Values D | il D1<br>(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max. 1 2 3 4<br>|<br>IS VGS = 0V 120 A L1<br>H<br>ISM Repetitive, Pulse Width Limited by TJM 480 A L<br>VSD IF = IS , VGS = 0V, Note 1 1.4 V<br>trr IF = 60A, -di/dt = 100A/s 505 ns C Ub A1 3 PLCSb b4 b2 2 PLCS a 2 PLCSe<br>QIRMRM V R = 100V, V GS = 0V 15 58 μCA Terminals: 1 - Gate2,4 - Drain3 - Source<br>**----- End of picture text -----**<br> Note 1. Pulse test, t 300s, duty cycle, d 2%. ## **PRELIMINARY TECHNICAL INFORMATION** The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXTK120N65X2 IXTX120N65X2** **==> picture [264 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>120<br>VGS = 10V<br> 8V<br>100<br>7V<br>80<br>60<br>6V<br>40<br>20<br>5V<br>0<br>0 0.5 1 1.5 2 2.5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>280<br>VGS = 10V<br>8V<br>240<br>200<br>7V<br>160<br>120<br>80<br>6V<br>40<br>5V<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [533 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = 60A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC<br>Junction Temperature<br>120 3.4<br>VGS = 10V<br> 7V 3.0 V GS = 10V<br>100<br>2.6<br>6V<br>80<br>2.2<br>I D = 120A<br>60 1.8<br>I D = 60A<br>1.4<br>40<br>1.0<br>5V<br>20<br>0.6<br>4V<br>0 0.2<br>0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>3.5 1.2<br>VGS = 10V<br>3.0 1.1 BV DSS<br>TJ = 125ºC<br>2.5 1.0<br>2.0 0.9<br>1.5 0.8 V GS(th)<br>TJ = 25ºC<br>1.0 0.7<br>0.5 0.6<br>0 40 80 120 160 200 240 280 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized<br>GS(th)<br>DS(on) / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br> © 2016 IXYS CORPORATION, All Rights Reserved **IXTK120N65X2 IXTX120N65X2** **==> picture [264 x 421] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Maximum Drain Current vs. Case Temperature<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br>Fig. 9. Transconductance<br>200<br>180 TJ = - 40ºC<br>160<br>140 25ºC<br>120<br>125ºC<br>100<br>80<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140 160 180<br>I D - Amperes<br> - Amperes<br>D<br>I<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **==> picture [264 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Input Admittance<br>180<br>160<br>140<br>T J = 125ºC<br>120 25ºC<br> - 40ºC<br>100<br>80<br>60<br>40<br>20<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **==> picture [265 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>300<br>250<br>200<br>150<br>100<br>TJ = 125ºC<br>50 TJ = 25ºC<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3<br>VSD - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **==> picture [538 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br> V DS = 325V<br>8 I D = 60A 10,000<br> I G = 10mA Ciss<br>6 1,000<br>C oss<br>4 100<br>2 10<br>f = 1 MHz Crss<br>0 1<br>0 40 80 120 160 200 240 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXTK120N65X2 IXTX120N65X2** **Fig. 13. Output Capacitance Stored Energy** **Fig. 14. Forward-Bias Safe Operating Area** **==> picture [531 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 90 1000<br>RDS(on) Limit<br>80<br>70<br>100<br>25µs<br>60<br>100µs<br>50<br>10<br>40<br>30<br>1ms<br>1<br>20 TJ = 150ºC<br> T C = 25ºC<br>10<br> Single Pulse 10ms<br>0 0.1<br>0 100 200 300 400 Fig. 15. Maximum Transient Thermal Impedance 500 600 10 100 1,000<br>1 VDS - Volts VDS - Volts<br> - MicroJoules - Amperes<br>ID<br>OSS<br>E<br>**----- End of picture text -----**<br> ~~**Fig. 15. Maximum Transient Thermal Impedance**~~ **==> picture [524 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> aaaaa<br>0.3<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: T_120N65X2(X9-S602) 1-06-16 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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